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    Apparatus for removing foreign material from substrate and method for removing foreign material from substrate
    1.
    发明授权
    Apparatus for removing foreign material from substrate and method for removing foreign material from substrate 失效
    用于从基材除去异物的设备和从基材除去异物的方法

    公开(公告)号：US08196594B2

    公开(公告)日：2012-06-12

    申请号：US11988514

    申请日：2006-07-11

    申请人： Riichiro Harano ,  Yoshiaki Tatsumi ,  Kinya Miyashita ,  Hiroshi Fujisawa

    发明人： Riichiro Harano ,  Yoshiaki Tatsumi ,  Kinya Miyashita ,  Hiroshi Fujisawa

    IPC分类号： B08B3/00

    CPC分类号： H02N13/00 ,  B08B6/00 ,  B08B7/0014 ,  H01L21/02046 ,  H01L21/02096 ,  H01L21/67132 ,  H01L21/683

    摘要： Provided are an apparatus for and a method of removing foreign materials from a substrate which reliably remove the foreign materials, eliminate a chance of redeposition of the foreign materials, and are applicable even to large-size substrates. The apparatus for removing foreign materials includes electrostatic chucks (2, 3) forming a substrate chucking surface (4) to which the substrate (1) is attracted; a resin sheet supplying means (9) for supplying a resin sheet (5) to the substrate chucking surface (4); resin sheet collecting means (13) for collecting the supplied resin sheet (5); and a substrate transfer means for transferring the substrate (1). The substrate (1) supplied to the electrostatic chucks (2, 3) by the substrate transfer means is attracted to the substrate chucking surface (4) through the resin sheet (5), and a foreign material (22) deposited on a side of the substrate chucking surface (4) of the substrate (1) is transferred onto the resin sheet (5) and removed.

    摘要翻译： 提供了从基材中除去异物的装置和方法，其可靠地除去异物，消除异物再沉积的可能性，并且甚至可应用于大尺寸基板。 用于除去异物的设备包括形成衬底（1）被吸引到其上的衬底夹持表面（4）的静电吸盘（2,3） 用于将树脂片（5）供给到基板夹持表面（4）的树脂片材供应装置（9）; 用于收集供应的树脂片（5）的树脂片收集装置（13）; 以及用于转移基板（1）的基板转印装置。 通过基板传送装置供给到静电卡盘（2,3）的基板（1）通过树脂片（5）被吸引到基板夹持表面（4），并且异物（22）沉积在 将基板（1）的基板夹持面（4）转印到树脂片（5）上并除去。

    Apparatus for removing foreign material from substrate and method for removing foreign material from substrate
    2.
    发明申请
    Apparatus for removing foreign material from substrate and method for removing foreign material from substrate 失效
    用于从基材除去异物的设备和从基材除去异物的方法

    公开(公告)号：US20090250077A1

    公开(公告)日：2009-10-08

    申请号：US11988514

    申请日：2006-07-11

    申请人： Riichiro Harano ,  Yoshiaki Tatsumi ,  Kinya Miyashita ,  Hiroshi Fujisawa

    发明人： Riichiro Harano ,  Yoshiaki Tatsumi ,  Kinya Miyashita ,  Hiroshi Fujisawa

    IPC分类号： B08B6/00 ,  A47L13/40

    CPC分类号： H02N13/00 ,  B08B6/00 ,  B08B7/0014 ,  H01L21/02046 ,  H01L21/02096 ,  H01L21/67132 ,  H01L21/683

    摘要： Provided are an apparatus for and a method of removing foreign materials from a substrate which reliably remove the foreign materials, eliminate a chance of redeposition of the foreign materials, and are applicable even to large-size substrates. The apparatus for removing foreign materials includes electrostatic chucks (2, 3) forming a substrate chucking surface (4) to which the substrate (1) is attracted; a resin sheet supplying means (9) for supplying a resin sheet (5) to the substrate chucking surface (4); resin sheet collecting means (13) for collecting the supplied resin sheet (5); and a substrate transfer means for transferring the substrate (1). The substrate (1) supplied to the electrostatic chucks (2, 3) by the substrate transfer means is attracted to the substrate chucking surface (4) through the resin sheet (5), and a foreign material (22) deposited on a side of the substrate chucking surface (4) of the substrate (1) is transferred onto the resin sheet (5) and removed.

    摘要翻译： 提供了从基材中除去异物的装置和方法，其可靠地除去异物，消除异物再沉积的可能性，并且甚至可应用于大尺寸基板。 用于除去异物的设备包括形成衬底（1）被吸引到其上的衬底夹持表面（4）的静电吸盘（2,3） 用于将树脂片（5）供给到基板夹持表面（4）的树脂片材供应装置（9）; 用于收集供应的树脂片（5）的树脂片收集装置（13）; 以及用于转移基板（1）的基板转印装置。 通过基板传送装置供给到静电卡盘（2,3）的基板（1）通过树脂片（5）被吸引到基板夹持表面（4），并且异物（22）沉积在 将基板（1）的基板夹持面（4）转印到树脂片（5）上并除去。

    Electrostatic chucking device and manufacturing method thereof
    3.
    发明授权
    Electrostatic chucking device and manufacturing method thereof 有权
    静电夹持装置及其制造方法

    公开(公告)号：US06813134B2

    公开(公告)日：2004-11-02

    申请号：US09925739

    申请日：2001-08-10

    申请人： Yoshiaki Tatsumi ,  Kinya Miyashita

    发明人： Yoshiaki Tatsumi ,  Kinya Miyashita

    IPC分类号： H02N1300

    CPC分类号： H01L21/6833 ,  H01L21/6831 ,  Y10T279/23 ,  Y10T428/263 ,  Y10T428/269 ,  Y10T428/31721

    摘要： An electrostatic chucking device having a laminated structure formed by sequentially laminating a first insulation layer, an electrode layer, and a second insulation layer on a metal substrate. The first and second insulation layers are formed from polyimide films. At least one adhesion layer is provided between the metal substrate and the first insulation layer, and, preferably, between the first insulation layer and the electrode layer, and between the electrode layer and the second insulation layer. The adhesion layer is a thermoplastic polyimide-based adhesive film having a film thickness of 5 to 50 &mgr;m. The electrostatic chucking device may be manufactured by a low-temperature compression bonding process under pressure at a temperature of 100 to 250° C. between the metal substrate and the first insulation layer, between the first insulation layer and the electrode layer, and between the electrode layer and the second insulation layer using thermoplastic polyimide-based adhesion films.

    摘要翻译： 一种具有叠层结构的静电夹持装置，其通过在金属基板上依次层叠第一绝缘层，电极层和第二绝缘层而形成。 第一和第二绝缘层由聚酰亚胺膜形成。 在金属基板和第一绝缘层之间，优选地，在第一绝缘层和电极层之间以及电极层和第二绝缘层之间设置至少一个粘附层。 粘合层是膜厚为5〜50μm的热塑性聚酰亚胺系粘合膜。 静电吸附装置可以通过在金属基板和第一绝缘层之间，第一绝缘层和电极层之间以及在第一绝缘层和电极层之间的温度为100至250℃的压力下的低温压接工艺 电极层和使用热塑性聚酰亚胺基粘合膜的第二绝缘层。

    Method of using a shaping mold for making ultra-thin shaped rubber articles
    4.
    发明授权
    Method of using a shaping mold for making ultra-thin shaped rubber articles 失效
    使用成形模制造超薄型橡胶制品的方法

    公开(公告)号：US5595704A

    公开(公告)日：1997-01-21

    申请号：US133128

    申请日：1993-10-20

    申请人： Tomoyuki Hayashi ,  Yoshiaki Tatsumi ,  Kinya Miyashita

    发明人： Tomoyuki Hayashi ,  Yoshiaki Tatsumi ,  Kinya Miyashita

    IPC分类号： B29C33/02 ,  B29C33/38 ,  B29C33/76 ,  B29C35/02 ,  B29C41/14 ,  B29C41/46 ,  B29C41/40

    CPC分类号： B29C33/02 ,  B29C33/38 ,  B29C41/14 ,  B29C41/46 ,  B29C2035/0211 ,  B29C33/76 ,  B29K2707/04 ,  B29L2031/7538 ,  Y10S425/013

    摘要： A shaping mold for the production of ultra-thin shaped rubber articles, has a main body which is dipped into a latex liquid so as to make the latex adhered to the surface of the main body. The adhered latex is heat-dried to form an ultra-thin shaped rubber article over the surface. The mold is such that at least the surface of its main body is made of an amorphous carbon and that its bottom part is fitted with electrifying electrodes and has therebetween a heating area to be heated by resistance heating due to its electrification. The same shaping mold can be used from its dipping step through the inspecting step of inspecting the shaped article as adhered to the surface of the mold. In the heat-drying step of the method, the shaped article as adhered to the surface of the shaping mold is heated and dried from the inside of the mold with preventing as much as possible formation of pin holes in the shaped article.

    摘要翻译： PCT No.PCT / JP93 / 00208 Sec。 371日期：1993年10月20日 102（e）日期1993年12月20日PCT提交1993年2月22日PCT公布。 公开号WO93 / 16857 日期1993年9月2日用于生产超薄型橡胶制品的成形模具具有将主体浸入胶乳液体中以使胶乳粘附到主体的表面。 将粘合的胶乳加热干燥以在表面上形成超薄形橡胶制品。 模具至少使其主体的表面由无定形碳制成，并且其底部装配带电电极，并且在其间具有由于其通电而被加热的加热区域。 可以从其浸渍步骤通过检查成型制品粘附到模具表面的检查步骤使用相同的成型模具。 在该方法的加热干燥步骤中，从成型模具的表面粘附到成型模具的表面上的成型制品被加热和干燥，从而防止在成形制品中形成针孔。

    Wafer stage for manufacturing a semiconductor device
    5.
    发明授权
    Wafer stage for manufacturing a semiconductor device 失效
    用于制造半导体器件的晶片级

    公开(公告)号：US5968273A

    公开(公告)日：1999-10-19

    申请号：US910329

    申请日：1997-08-13

    申请人： Shingo Kadomura ,  Tomohide Jozaki ,  Shinsuke Hirano ,  Kinya Miyashita ,  Yoshiaki Tatsumi ,  Seiichirou Miyata

    发明人： Shingo Kadomura ,  Tomohide Jozaki ,  Shinsuke Hirano ,  Kinya Miyashita ,  Yoshiaki Tatsumi ,  Seiichirou Miyata

    IPC分类号： C23C16/44 ,  C23C16/14 ,  C23C16/34 ,  C23C16/40 ,  C23C16/458 ,  H01L21/00 ,  H01L21/683 ,  C23C16/00

    CPC分类号： C23C16/14 ,  C23C16/34 ,  C23C16/401 ,  C23C16/4586 ,  H01L21/67109 ,  H01L21/6831

    摘要： Disclosed is a wafer stage allowing a plasma process under a heating condition at a high temperature, particularly, 400.degree. C. or more using the improved electrostatically chucking technology with the increased temperature-controllability. The wafer stage includes an electrostatic chuck and a temperature adjusting jacket disposed under said electrostatic chuck. The electrostatic chuck includes: a dielectric member made from an insulating material; an electrode formed of a brazing layer, which is disposed on the underside of said dielectric member for fixing said dielectric member; an aluminum nitride plate disposed on the underside of said electrode, to which said dielectric member is fixed through said electrode; a heater, disposed on the underside of said aluminum nitride plate, for heating said dielectric member; and a metal plate disposed on the underside of said aluminum nitride plate and also at least on a top or bottom side of said heater. The temperature adjusting jacket is made from a composite aluminum based material prepared by treatment of aluminum or an aluminum alloy with inorganic fibers under a high pressure, and includes a temperature adjusting means.

    摘要翻译： 公开了一种使用改进的静电吸附技术，在升高的温度可控性的高温下，特别是在400℃以上的加热条件下进行等离子体处理的晶片台。 晶片台包括设置在所述静电卡盘下方的静电卡盘和温度调节套管。 静电卡盘包括：由绝缘材料制成的电介质构件; 由钎焊层形成的电极，其设置在所述电介质构件的下侧，用于固定所述电介质构件; 设置在所述电极的下侧的氮化铝板，所述电介质构件通过所述电极固定到所述电极上; 加热器，设置在所述氮化铝板的下侧，用于加热所述电介质构件; 以及金属板，其设置在所述氮化铝板的下侧，并且还至少在所述加热器的顶部或底部。 温度调节外套由通过在高压下用无机纤维处理铝或铝合金制备的复合铝基材料制成，并且包括温度调节装置。

    Substrate suction apparatus and method for manufacturing the same
    6.
    发明授权
    Substrate suction apparatus and method for manufacturing the same 失效
    基板吸附装置及其制造方法

    公开(公告)号：US08469342B2

    公开(公告)日：2013-06-25

    申请号：US12669856

    申请日：2008-06-05

    申请人： Yoshiaki Tatsumi ,  Kinya Miyashita

    发明人： Yoshiaki Tatsumi ,  Kinya Miyashita

    IPC分类号： B25B11/00

    CPC分类号： H01L21/6838 ,  B65G49/061 ,  B65G49/065 ,  B65G2249/02 ,  B65G2249/045 ,  H01L21/6833

    摘要： Provided is a substrate suction apparatus which has a vacuum suction mechanism and an electrostatic attraction mechanism, and improves planarity of a subject to be processed by improving uniformity in vacuum suction power. A method for manufacturing such substrate suction apparatus is also provided. A substrate suction apparatus (1) is provided with a base board (2), a dielectric body (3), an electrostatic attraction mechanism (4) and a vacuum suction mechanism (5). Specifically, the dielectric body (3) is composed of a downmost dielectric layer (31), an intermediate dielectric layer (32) and a topmost dielectric layer (33). The electrostatic attraction mechanism (4) is composed of attraction electrodes (41, 42) and a direct current power supply. The vacuum suction mechanism (5) is composed of a groove (51), a suction channel (52), a porous dielectric body (3) and the porous attraction electrodes (41, 42). The downmost dielectric layer (31), the intermediate dielectric layer (32) and the topmost dielectric layer (33) are formed by spraying ceramic particles, and the attraction electrodes (41, 42) are formed by spraying tungsten particles. The average pore diameter and porosity of the downmost dielectric layer (31) are set maximum, and those of the topmost dielectric layer (33) are set minimum.

    摘要翻译： 提供一种具有真空抽吸机构和静电吸引机构的基板抽吸装置，并且通过提高真空吸力的均匀性来提高待处理对象的平面性。 还提供了一种用于制造这种基板抽吸装置的方法。 基板吸附装置（1）设置有基板（2），电介质体（3），静电吸引机构（4）和真空吸引机构（5）。 具体而言，介电体（3）由最下层的电介质层（31），中间电介质层（32）和最上层的电介质层（33）构成。 静电吸引机构（4）由吸引电极（41,42）和直流电源构成。 真空抽吸机构（5）由凹槽（51），吸入通道（52），多孔介电体（3）和多孔吸引电极（41,42）构成。 通过喷射陶瓷颗粒形成最下面的介电层（31），中间介电层（32）和最上层的电介质层（33），通过喷涂钨颗粒形成吸引电极（41,42）。 最下面的介电层（31）的平均孔径和孔隙率被设定为最大，并且最上面的介电层（33）的平均孔径和孔隙率被设定为最小。

    SUBSTRATE SUCTION APPARATUS AND METHOD FOR MANUFACTURING THE SAME
    10.
    发明申请
    SUBSTRATE SUCTION APPARATUS AND METHOD FOR MANUFACTURING THE SAME 失效
    基板吸收装置及其制造方法

    公开(公告)号：US20100194012A1

    公开(公告)日：2010-08-05

    申请号：US12669856

    申请日：2008-06-05

    申请人： Yoshiaki Tatsumi ,  Kinya Miyashita

    发明人： Yoshiaki Tatsumi ,  Kinya Miyashita

    IPC分类号： H01L21/683 ,  B05D1/36 ,  B25B11/00

    CPC分类号： H01L21/6838 ,  B65G49/061 ,  B65G49/065 ,  B65G2249/02 ,  B65G2249/045 ,  H01L21/6833

    摘要： Provided is a substrate suction apparatus which has a vacuum suction mechanism and an electrostatic attraction mechanism, and improves planarity of a subject to be processed by improving uniformity in vacuum suction power. A method for manufacturing such substrate suction apparatus is also provided. A substrate suction apparatus (1) is provided with a base board (2), a dielectric body (3), an electrostatic attraction mechanism (4) and a vacuum suction mechanism (5). Specifically, the dielectric body (3) is composed of a downmost dielectric layer (31), an intermediate dielectric layer (32) and a topmost dielectric layer (33). The electrostatic attraction mechanism (4) is composed of attraction electrodes (41, 42) and a direct current power supply. The vacuum suction mechanism (5) is composed of a groove (51), a suction channel (52), a porous dielectric body (3) and the porous attraction electrodes (41, 42). The downmost dielectric layer (31), the intermediate dielectric layer (32) and the topmost dielectric layer (33) are formed by spraying ceramic particles, and the attraction electrodes (41, 42) are formed by spraying tungsten particles. The average pore diameter and porosity of the downmost dielectric layer (31) are set maximum, and those of the topmost dielectric layer (33) are set minimum.

    摘要翻译： 提供一种具有真空抽吸机构和静电吸引机构的基板抽吸装置，并且通过提高真空吸力的均匀性来提高待处理对象的平面性。 还提供了一种用于制造这种基板抽吸装置的方法。 基板吸附装置（1）设置有基板（2），电介质体（3），静电吸引机构（4）和真空吸引机构（5）。 具体而言，介电体（3）由最下层的电介质层（31），中间电介质层（32）和最上层的电介质层（33）构成。 静电吸引机构（4）由吸引电极（41,42）和直流电源构成。 真空抽吸机构（5）由凹槽（51），吸入通道（52），多孔介电体（3）和多孔吸引电极（41,42）构成。 通过喷射陶瓷颗粒形成最下面的介电层（31），中间介电层（32）和最上层的电介质层（33），通过喷涂钨颗粒形成吸引电极（41,42）。 最下面的介电层（31）的平均孔径和孔隙率被设定为最大，并且最上面的介电层（33）的平均孔径和孔隙率被设定为最小。