公开(公告)号：US5725677A

公开(公告)日：1998-03-10

申请号：US666808

申请日：1996-06-19

申请人： Rinji Sugino ,  Masaki Okuno ,  Yasuhisa Sato

发明人： Rinji Sugino ,  Masaki Okuno ,  Yasuhisa Sato

IPC分类号： C23F4/00 ,  C23G5/00 ,  H01L21/00 ,  H01L21/302 ,  H01L21/304 ,  H01L21/306 ,  H01L21/3065 ,  H01L21/311 ,  B08B5/00 ,  C03C23/00 ,  C23F1/00

CPC分类号： H01L21/02046 ,  H01L21/02063 ,  H01L21/31116 ,  H01L21/67028 ,  Y10S438/906

摘要： A dry cleaning method for removing metal contaminants from a surface of an oxide film such that no substantial etching of the oxide film occurs, includes the steps of supplying a halide gas containing an element that is selected from the group IIIa elements, group IVa elements and the group Va elements in a form of halide, to the oxide film, thereby dry cleaning the surface of the oxide film.

摘要翻译： 一种用于从氧化膜的表面除去金属污染物使得不发生氧化膜的实质蚀刻的干法，包括以下步骤：提供含有选自IIIa族元素，IVa族元素和 将Va族元素以卤化物的形式提供给氧化膜，从而干燥氧化膜的表面。

公开(公告)号：US5578133A

公开(公告)日：1996-11-26

申请号：US3384

申请日：1993-01-12

申请人： Rinji Sugino ,  Masaki Okuno ,  Yasuhisa Sato

发明人： Rinji Sugino ,  Masaki Okuno ,  Yasuhisa Sato

IPC分类号： C23F4/00 ,  C23G5/00 ,  H01L21/00 ,  H01L21/302 ,  H01L21/304 ,  H01L21/306 ,  H01L21/3065 ,  H01L21/311 ,  B08B5/00 ,  C03C23/00 ,  C23F1/00

CPC分类号： H01L21/02046 ,  H01L21/02063 ,  H01L21/31116 ,  H01L21/67028 ,  Y10S438/906

摘要： A dry cleaning process for removing metal contaminants from a surface of an oxide film includes the steps of: forming a reaction area on the oxide film such that a silicon surface is formed in correspondence to the reaction area, supplying a dry cleaning gas selected from a group essentially consisting of chlorine, bromine, hydrogen chloride, hydrogen bromide and a mixture thereof, to the oxide film including the reaction area, to produce silicon halide molecules as a result of a reaction between the dry cleaning gas and the silicon surface, supplying the silicon halide molecules to a surface of the oxide film, and removing metal elements existing on the surface of the oxide film as a result of a reaction between the metal element and the dry cleaning gas under a presence of the silicon halide molecules.

摘要翻译： 用于从氧化膜表面除去金属污染物的干洗方法包括以下步骤：在氧化膜上形成反应区域，使得与反应区域相对应形成硅表面，供应选自 基团由氯，溴，氯化氢，溴化氢及其混合物组成的组合物，包括反应区域的氧化物膜，由于干洗气体和硅表面之间的反应而产生卤化硅分子， 硅氧化物分子到氧化膜的表面，并且由于在卤化硅分子的存在下金属元素和干洗气体之间的反应，除去存在于氧化膜表面上的金属元素。

公开(公告)号：US5693578A

公开(公告)日：1997-12-02

申请号：US606681

申请日：1996-02-26

申请人： Toshiro Nakanishi ,  Yasuhisa Sato ,  Masaki Okuno

发明人： Toshiro Nakanishi ,  Yasuhisa Sato ,  Masaki Okuno

IPC分类号： H01L21/316 ,  H01L21/306 ,  H01L29/78 ,  H01L21/02

CPC分类号： H01L21/02046 ,  H01L21/02238 ,  H01L21/02255 ,  H01L21/31662

摘要： A method of forming a silicon oxide film by setting a silicon wafer in a chamber capable of introducing oxidizing gas and being evacuated and by heating the silicon wafer in an oxidizing atmosphere. The method includes the steps of: transporting the silicon wafer into the chamber without contacting the silicon wafer with air; introducing an ozone containing gas into the chamber and setting the interior of the chamber to a predetermined pressure; and heating the silicon wafer to a predetermined temperature and oxidizing the surface of the silicon wafer. The predetermined pressure is preferably between 200 Torr and 0.1 Torr. Ozone may be generated from oxygen by applying ultraviolet rays to the upper space of a silicon wafer. The temperature of ozone to be introduced is preferably low. It is preferable to incorporate infrared heating in order not to excessively heat ozone and to heat a silicon wafer to a high temperature.

摘要翻译： 通过将硅晶片设置在能够引入氧化气体并被抽真空的室中并通过在氧化气氛中加热硅晶片来形成氧化硅膜的方法。 该方法包括以下步骤：将硅晶片输送到室中而不用硅晶片与空气接触; 将含臭氧的气体引入所述室并将所述室的内部设定为预定压力; 并将硅晶片加热到预定温度并氧化硅晶片的表面。 预定压力优选在200托和0.1托之间。 臭氧可以通过向硅晶片的上部空间施加紫外线而从氧产生。 要引入的臭氧的温度优选低。 为了不过度加热臭氧并将硅晶片加热到高温，优选加入红外线加热。

公开(公告)号：US4862202A

公开(公告)日：1989-08-29

申请号：US282947

申请日：1988-12-05

申请人： Takayuki Tsuboi ,  Isao Nakazawa ,  Yoshihiro Harunari ,  Yasuhisa Sato ,  Yasuyuki Yamada

发明人： Takayuki Tsuboi ,  Isao Nakazawa ,  Yoshihiro Harunari ,  Yasuhisa Sato ,  Yasuyuki Yamada

IPC分类号： G03B19/07

CPC分类号： G03B19/07

摘要： A magnification change-over device for a camera is provided with an incident optical path for the incidence of the light of an object to be photographed; a first optical path for guiding the object light incident on the incident optical path to a first aperture; a second optical path for guiding the object light incident on the incident optical path to a second aperture; changeover means for selection between the first and second optical paths; and optical means for differentiating the magnification of an image formed through the second aperture from that of an image formed through the first aperture.

摘要翻译： 用于相机的倍率转换装置设置有入射光路，用于入射被拍摄物体的光; 用于将入射在入射光路上的物体​​光引导到第一孔的第一光路; 用于将入射在入射光路上的物体​​光引导到第二孔的第二光路; 用于在第一和第二光路之间进行选择的切换装置; 以及用于区分通过第二孔形成的图像的放大率与通过第一孔形成的图像的放大率的光学装置。

公开(公告)号：US4842395A

公开(公告)日：1989-06-27

申请号：US159471

申请日：1988-02-19

申请人： Yasuhisa Sato ,  Nozomu Kitagishi ,  Yasuyuki Yamada ,  Hiroki Nakayama ,  Kouji Oizumi

发明人： Yasuhisa Sato ,  Nozomu Kitagishi ,  Yasuyuki Yamada ,  Hiroki Nakayama ,  Kouji Oizumi

IPC分类号： G02B25/00 ,  G02B15/16 ,  G02B15/177 ,  G02B23/14 ,  G03B13/12

CPC分类号： G02B15/177 ,  G02B23/145

摘要： The disclosed variable magnification finder includes, from front to rear, a first lens unit of negative power, a second lens unit of positive power, a third lens unit of positive power, the first, second and third lens units constituting an objective lens of positive power, and an eyepiece of positive power. The first and second lens units form a finder image on a plane just in front of the third lens unit. The second lens unit is moved axially forward to increase the image magnification, while the shift of diopter of the finder is simultaneously compensated for by moving the first lens unit.

摘要翻译： 所公开的可变倍率取景器包括从前到后的负功率的第一透镜单元，正光焦度的第二透镜单元，正光焦度的第三透镜单元，构成正的物镜的第一，第二和第三透镜单元 权力和一个正面力量的目镜。 第一和第二透镜单元在刚好在第三透镜单元前面的平面上形成取景器图像。 第二透镜单元轴向移动以增加图像放大率，同时通过移动第一透镜单元来同时补偿取景器的屈光度偏移。

公开(公告)号：US4751539A

公开(公告)日：1988-06-14

申请号：US080570

申请日：1987-07-31

申请人： Yasuyuki Yamada ,  Yasuhisa Sato ,  Hiroki Nakayama ,  Kouji Oizumi

发明人： Yasuyuki Yamada ,  Yasuhisa Sato ,  Hiroki Nakayama ,  Kouji Oizumi

IPC分类号： G02B15/04 ,  G02B23/14 ,  G03B13/12

CPC分类号： G02B15/04 ,  G02B23/14 ,  G02B23/145

摘要： A variable power finder having an objective lens of positive refracting power comprising a first lens unit of positive refracting power movable along an optical axis and a second lens unit releasably attached to the first lens unit in axial alignment, wherein a real image to be observed is formed by the objective lens.

摘要翻译： 一种具有正折射率的物镜的可变功率寻找器，包括沿着光轴可移动的正折射力的第一透镜单元和可轴向地连接到第一透镜单元的第二透镜单元，其中要观察的实像是 由物镜形成。

公开(公告)号：US4477155A

公开(公告)日：1984-10-16

申请号：US448807

申请日：1982-12-10

申请人： Yasuhisa Sato ,  Hideo Yokota ,  Yasuyuki Yamada

发明人： Yasuhisa Sato ,  Hideo Yokota ,  Yasuyuki Yamada

IPC分类号： G02B9/34 ,  G02B9/60 ,  G02B13/18

CPC分类号： G02B9/34

摘要： A photographic lens having four components of characteristic forms with the 1st component counting from front being axially moved forward while the 2nd component is moved axially in a given relation to the 1st component as focusing is effected down to shorter object distances.

摘要翻译： 具有四个特征形式分量的照相镜头，其中从前面计数的第一分量沿着轴向向前移动，同时第二分量以给定关系以给定关系向第一分量轴向移动，作为聚焦被实现为较短的物体距离。

公开(公告)号：US4456352A

公开(公告)日：1984-06-26

申请号：US351935

申请日：1982-02-24

申请人： Yasuhisa Sato

发明人： Yasuhisa Sato

IPC分类号： G02B27/10 ,  G03B7/099 ,  G03B7/0997 ,  G03B19/12 ,  G03B7/08

CPC分类号： G03B7/09972

摘要： A light receiving apparatus for use in single-lens reflex camera is disclosed. A beam splitter is disposed between the swing-up mirror of the camera and the film plane to divide the light transmitted through the taking lens into a plural number of beams. To receive the divided beams there are provided a plural number of photoreceptors in the respective optical paths of the divided beams.

摘要翻译： 公开了一种用于单镜头反光相机的光接收装置。 分光器设置在相机的摆动反射镜和胶片平面之间，以将穿过拍摄镜头的光分成多个光束。 为了接收分割光束，在分割光束的各个光路中设置多个感光体。

公开(公告)号：US4217050A

公开(公告)日：1980-08-12

申请号：US822253

申请日：1977-08-05

申请人： Yasuhisa Sato ,  Akira Tajima ,  Yukiharu Ono

发明人： Yasuhisa Sato ,  Akira Tajima ,  Yukiharu Ono

IPC分类号： G03B17/20 ,  G03B13/06

CPC分类号： G03B17/20

摘要： An optical system for forming a view-finder image in combination with an image of exposure condition indicia as applied to a cinematographic camera includes a first image plane at which a focusing screen lies with the exposure condition indicia located at a desired large distance from the finder field of view, and a prism positioned ahead of a second image plane at which both the images are erected, and oriented so that the image of the indicia can be seen immediately adjacent the finder field of view by a photographer looking through an ocular of the system.

摘要翻译： 用于与应用于电摄影照相机的曝光条件标记的图像组合的用于形成取景器图像的光学系统包括第一图像平面，聚焦屏幕所在的第一图像平面位于距离取景器所需大的距离处的曝光条件标记 视野，以及位于第二图像平面前方的棱镜，在该第二图像平面处两个图像被竖立，并且被定向成使得可以通过摄影者观察标记的图像，以便通过观察者的眼睛立即观察标记的图像。 系统。

公开(公告)号：US4983543A

公开(公告)日：1991-01-08

申请号：US401690

申请日：1989-09-01

申请人： Yasuhisa Sato ,  Takushi Motoyama

发明人： Yasuhisa Sato ,  Takushi Motoyama

IPC分类号： H01L21/3205 ,  H01L21/768

CPC分类号： H01L21/32051 ,  H01L21/76879 ,  H01L2924/0002

摘要： A method of manufacturing a semiconductor integrated circuit comprises steps of forming at least one semiconductor device on a substrate, depositing an insulator layer on the substrate so as to bury the semiconductor device, providing a contact hole through the insulator layer for exposing a desired part of the semiconductor device, filling the contact hole by a refractory metal for electrical connection, covering the insulator layer by a second insulator layer, forming a groove through the second insulator layer according to a predetermined interconnection pattern such that the groove passes at least one contact hole and such that a top surface of the refractory metal filling the contact hole and a top surface of the first insulator layer are exposed by the groove, forming a material layer acting as nuclei for crystal growth of a second refractory metal at a bottom of the groove substantially continuously along the groove, and depositing the second refractory metal in the groove until the groove is substantially filled by a conductor of the second refractory metal.