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1.发明申请Capacitors Having Dielectric Regions That Include Multiple Metal Oxide-Comprising Materials 失效具有包含多种金属氧化物的材料的介电区域的电容器公开(公告)号：US20100315760A1
公开(公告)日：2010-12-16
申请号：US12483474
申请日：2009-06-12
申请人： Rishikesh Krishnan , John Smythe , Vishwanath Bhat , Noel Rocklein , Bhaskar Srinivasan , Jeff Hully , Chris Carlson
发明人： Rishikesh Krishnan , John Smythe , Vishwanath Bhat , Noel Rocklein , Bhaskar Srinivasan , Jeff Hully , Chris Carlson
IPC分类号： H01G4/10
CPC分类号： H01L28/56 , H01G4/10 , H01L27/108
摘要： Capacitors and methods of forming capacitors are disclosed, and which include an inner conductive metal capacitor electrode and an outer conductive metal capacitor electrode. A capacitor dielectric region is received between the inner and the outer conductive metal capacitor electrodes and has a thickness no greater than 150 Angstroms. Various combinations of materials of thicknesses and relationships relative one another are disclosed which enables and results in the dielectric region having a dielectric constant k of at least 35 yet leakage current no greater than 1×10−7 amps/cm2 at from −1.1V to +1.1V.
摘要翻译： 公开了形成电容器的电容器和方法，其包括内部导电金属电容器电极和外部导电金属电容器电极。 电容器电介质区域被容纳在内导电金属电容电极和外导电金属电容器电极之间，并且具有不大于150埃的厚度。 公开了厚度和关系的材料的各种组合，其相互之间可以实现和导致电介质区域的介电常数k至少为35，而在-1.1V至-1.0V的范围内漏电流不大于1×10-7Aps / cm 2 + 1.1V。
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2.发明授权Methods of forming capacitors having dielectric regions that include multiple metal oxide-comprising materials 失效形成具有包括多个含金属氧化物的材料的电介质区域的电容器的方法公开(公告)号：US08236372B2
公开(公告)日：2012-08-07
申请号：US12483455
申请日：2009-06-12
申请人： Rishikesh Krishnan , John Smythe , Vishwanath Bhat , Noel Rocklein , Bhaskar Srinivasan , Jeff Hall , Chris Carlson
发明人： Rishikesh Krishnan , John Smythe , Vishwanath Bhat , Noel Rocklein , Bhaskar Srinivasan , Jeff Hall , Chris Carlson
IPC分类号： B05D5/12
CPC分类号： H01G4/12 , H01G4/1272 , H01G4/33 , H01L28/40
摘要： Capacitors and methods of forming capacitors are disclosed, and which include an inner conductive metal capacitor electrode and an outer conductive metal capacitor electrode. A capacitor dielectric region is received between the inner and the outer conductive metal capacitor electrodes and has a thickness no greater than 150 Angstroms. Various combinations of materials of thicknesses and relationships relative one another are disclosed which enables and results in the dielectric region having a dielectric constant k of at least 35 yet leakage current no greater than 1×10−7 amps/cm2 at from −1.1V to +1.1V.
摘要翻译： 公开了形成电容器的电容器和方法，其包括内部导电金属电容器电极和外部导电金属电容器电极。 电容器电介质区域被容纳在内导电金属电容电极和外导电金属电容器电极之间，并且具有不大于150埃的厚度。 公开了厚度和关系的材料的各种组合，其相互之间可以实现和导致电介质区域的介电常数k至少为35，而在-1.1V至-1.0V的范围内漏电流不大于1×10-7Aps / cm 2 + 1.1V。
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3.发明授权Capacitors having dielectric regions that include multiple metal oxide-comprising materials 有权具有包括多个含金属氧化物的材料的电介质区域的电容器公开(公告)号：US08861179B2
公开(公告)日：2014-10-14
申请号：US13597708
申请日：2012-08-29
申请人： Rishikesh Krishnan , John Smythe , Vishwanath Bhat , Noel Rocklein , Bhaskar Srinivasan , Jeff Hull , Chris Carlson
发明人： Rishikesh Krishnan , John Smythe , Vishwanath Bhat , Noel Rocklein , Bhaskar Srinivasan , Jeff Hull , Chris Carlson
CPC分类号： H01L28/56 , H01G4/10 , H01L27/108
摘要： Capacitors and methods of forming capacitors are disclosed, and which include an inner conductive metal capacitor electrode and an outer conductive metal capacitor electrode. A capacitor dielectric region is received between the inner and the outer conductive metal capacitor electrodes and has a thickness no greater than 150 Angstroms. Various combinations of materials of thicknesses and relationships relative one another are disclosed which enables and results in the dielectric region having a dielectric constant k of at least 35 yet leakage current no greater than 1×10−7 amps/cm2 at from −1.1V to +1.1V.
摘要翻译： 公开了形成电容器的电容器和方法，其包括内部导电金属电容器电极和外部导电金属电容器电极。 电容器电介质区域被容纳在内导电金属电容电极和外导电金属电容器电极之间，并且具有不大于150埃的厚度。 公开了厚度和关系的材料的各种组合，其相互之间可以实现和导致电介质区域的介电常数k至少为35，而在-1.1V至-1.0V的范围内漏电流不大于1×10-7Aps / + 1.1V。
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4.发明申请Methods Of Forming Capacitors Having Dielectric Regions That Include Multiple Metal Oxide-Comprising Materials 失效形成具有包含多个金属氧化物的介电区域的电容器的方法公开(公告)号：US20100316793A1
公开(公告)日：2010-12-16
申请号：US12483455
申请日：2009-06-12
申请人： Rishikesh Krishnan , John Smythe , Vishwanath Bhat , Noel Rocklein , Bhaskar Srinivasan , Jef Hall , Chris Carlson
发明人： Rishikesh Krishnan , John Smythe , Vishwanath Bhat , Noel Rocklein , Bhaskar Srinivasan , Jef Hall , Chris Carlson
IPC分类号： B05D5/12
CPC分类号： H01G4/12 , H01G4/1272 , H01G4/33 , H01L28/40
摘要： Capacitors and methods of forming capacitors are disclosed, and which include an inner conductive metal capacitor electrode and an outer conductive metal capacitor electrode. A capacitor dielectric region is received between the inner and the outer conductive metal capacitor electrodes and has a thickness no greater than 150 Angstroms. Various combinations of materials of thicknesses and relationships relative one another are disclosed which enables and results in the dielectric region having a dielectric constant k of at least 35 yet leakage current no greater than 1×10−7 amps/cm2 at from −1.1V to +1.1V.
摘要翻译： 公开了形成电容器的电容器和方法，其包括内部导电金属电容器电极和外部导电金属电容器电极。 电容器电介质区域被容纳在内导电金属电容电极和外导电金属电容器电极之间，并且具有不大于150埃的厚度。 公开了厚度和关系的材料的各种组合，其相互之间可以实现和导致电介质区域的介电常数k至少为35，而在-1.1V至-1.0V的范围内漏电流不大于1×10-7Aps / cm 2 + 1.1V。
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5.发明授权Methods of forming capacitors having dielectric regions that include multiple metal oxide-comprising materials 有权形成具有包括多个含金属氧化物的材料的电介质区域的电容器的方法公开(公告)号：US08993044B2
公开(公告)日：2015-03-31
申请号：US13550340
申请日：2012-07-16
申请人： Rishikesh Krishnan , John Smythe , Vishwanath Bhat , Noel Rocklein , Bhaskar Srinivasan , Jeff Hull , Chris Carlson
发明人： Rishikesh Krishnan , John Smythe , Vishwanath Bhat , Noel Rocklein , Bhaskar Srinivasan , Jeff Hull , Chris Carlson
CPC分类号： H01G4/12 , H01G4/1272 , H01G4/33 , H01L28/40
摘要： Capacitors and methods of forming capacitors are disclosed, and which include an inner conductive metal capacitor electrode and an outer conductive metal capacitor electrode. A capacitor dielectric region is received between the inner and the outer conductive metal capacitor electrodes and has a thickness no greater than 150 Angstroms. Various combinations of materials of thicknesses and relationships relative one another are disclosed which enables and results in the dielectric region having a dielectric constant k of at least 35 yet leakage current no greater than 1×10−7 amps/cm2 at from −1.1V to +1.1V.
摘要翻译： 公开了形成电容器的电容器和方法，其包括内部导电金属电容器电极和外部导电金属电容器电极。 电容器电介质区域被容纳在内导电金属电容电极和外导电金属电容器电极之间，并且具有不大于150埃的厚度。 公开了厚度和关系的材料的各种组合，其相互之间可以实现和导致电介质区域的介电常数k至少为35，而在-1.1V至-1.0V的范围内漏电流不大于1×10-7Aps / cm 2 + 1.1V。
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6.发明申请Capacitors Having Dielectric Regions That Include Multiple Metal Oxide-Comprising Materials 有权具有包含多种金属氧化物的材料的介电区域的电容器公开(公告)号：US20120320494A1
公开(公告)日：2012-12-20
申请号：US13597708
申请日：2012-08-29
申请人： Rishikesh Krishnan , John Smythe , Vishwanath Bhat , Noel Rocklein , Bhaskar Srinivasan , Jeff Hull , Chris Carlson
发明人： Rishikesh Krishnan , John Smythe , Vishwanath Bhat , Noel Rocklein , Bhaskar Srinivasan , Jeff Hull , Chris Carlson
IPC分类号： H01G4/10
CPC分类号： H01L28/56 , H01G4/10 , H01L27/108
摘要： Capacitors and methods of forming capacitors are disclosed, and which include an inner conductive metal capacitor electrode and an outer conductive metal capacitor electrode. A capacitor dielectric region is received between the inner and the outer conductive metal capacitor electrodes and has a thickness no greater than 150 Angstroms. Various combinations of materials of thicknesses and relationships relative one another are disclosed which enables and results in the dielectric region having a dielectric constant k of at least 35 yet leakage current no greater than 1×10−7 amps/cm2 at from −1.1V to +1.1V.
摘要翻译： 公开了形成电容器的电容器和方法，其包括内部导电金属电容器电极和外部导电金属电容器电极。 电容器电介质区域被容纳在内导电金属电容电极和外导电金属电容器电极之间，并且具有不大于150埃的厚度。 公开了厚度和关系的材料的各种组合，其相互之间可以实现和导致电介质区域的介电常数k至少为35，而在-1.1V至-1.0V的范围内漏电流不大于1×10-7Aps / cm 2 + 1.1V。
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7.发明授权Capacitors having dielectric regions that include multiple metal oxide-comprising materials 失效具有包括多个含金属氧化物的材料的电介质区域的电容器公开(公告)号：US08310807B2
公开(公告)日：2012-11-13
申请号：US12483474
申请日：2009-06-12
申请人： Rishikesh Krishnan , John Smythe , Vishwanath Bhat , Noel Rocklein , Bhaskar Srinivasan , Jeff Hull , Chris Carlson
发明人： Rishikesh Krishnan , John Smythe , Vishwanath Bhat , Noel Rocklein , Bhaskar Srinivasan , Jeff Hull , Chris Carlson
CPC分类号： H01L28/56 , H01G4/10 , H01L27/108
摘要： Capacitors and methods of forming capacitors are disclosed, and which include an inner conductive metal capacitor electrode and an outer conductive metal capacitor electrode. A capacitor dielectric region is received between the inner and the outer conductive metal capacitor electrodes and has a thickness no greater than 150 Angstroms. Various combinations of materials of thicknesses and relationships relative one another are disclosed which enables and results in the dielectric region having a dielectric constant k of at least 35 yet leakage current no greater than 1×10−7 amps/cm2 at from −1.1V to +1.1V.
摘要翻译： 公开了形成电容器的电容器和方法，其包括内部导电金属电容器电极和外部导电金属电容器电极。 电容器电介质区域被容纳在内导电金属电容电极和外导电金属电容器电极之间，并且具有不大于150埃的厚度。 公开了厚度和关系的材料的各种组合，其相互之间可以实现和导致电介质区域的介电常数k至少为35，而在-1.1V至-1.0V的范围内漏电流不大于1×10-7Aps / cm 2 + 1.1V。
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8.发明申请Methods of Forming Capacitors Having Dielectric Regions That Include Multiple Metal Oxide-Comprising Materials 有权形成具有包含多种金属氧化物的材料的介电区域的电容器的方法公开(公告)号：US20120282754A1
公开(公告)日：2012-11-08
申请号：US13550340
申请日：2012-07-16
申请人： Rishikesh Krishnan , John Smythe , Vishwanath Bhat , Noel Rocklein , Bhaskar Srinivasan , Jeff Hull , Chris Carlson
发明人： Rishikesh Krishnan , John Smythe , Vishwanath Bhat , Noel Rocklein , Bhaskar Srinivasan , Jeff Hull , Chris Carlson
IPC分类号： H01L21/02
CPC分类号： H01G4/12 , H01G4/1272 , H01G4/33 , H01L28/40
摘要： Capacitors and methods of forming capacitors are disclosed, and which include an inner conductive metal capacitor electrode and an outer conductive metal capacitor electrode. A capacitor dielectric region is received between the inner and the outer conductive metal capacitor electrodes and has a thickness no greater than 150 Angstroms. Various combinations of materials of thicknesses and relationships relative one another are disclosed which enables and results in the dielectric region having a dielectric constant k of at least 35 yet leakage current no greater than 1×10−7 amps/cm2 at from −1.1V to +1.1V.
摘要翻译： 公开了形成电容器的电容器和方法，其包括内部导电金属电容器电极和外部导电金属电容器电极。 电容器电介质区域被容纳在内导电金属电容电极和外导电金属电容器电极之间，并且具有不大于150埃的厚度。 公开了厚度和关系的材料的各种组合，其相互之间可以实现和导致电介质区域的介电常数k至少为35，而在-1.1V至-1.0V的范围内漏电流不大于1×10-7Aps / cm 2 + 1.1V。
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9.发明授权Capacitor dielectric comprising silicon-doped zirconium oxide and capacitor using the same 有权包含掺杂硅的氧化锆和使用其的电容器的电容器电介质公开(公告)号：US08760845B2
公开(公告)日：2014-06-24
申请号：US13370312
申请日：2012-02-10
申请人： Noel Rocklein , Vishwanath Bhat , Chris Carlson
发明人： Noel Rocklein , Vishwanath Bhat , Chris Carlson
CPC分类号： H01L28/40 , H01L21/02159
摘要： A capacitor structure includes a storage node; a capacitor dielectric on the storage node; and a plate electrode on the capacitor dielectric. The capacitor dielectric may include a Si-doped ZrO2 layer or crystalline ZrSiOx with a Si/(Zr+Si) content ranging between 4-9% by atomic ratio. The capacitor structure further includes an interfacial TiO2/TiON layer between the storage node and the capacitor dielectric.
摘要翻译： 电容器结构包括存储节点; 存储节点上的电容器电介质; 和电容器电介质上的平板电极。 电容器电介质可以包括Si掺杂的ZrO 2层或Si /（Zr + Si）含量在4-9％原子比范围内的结晶ZrSiO x。 电容器结构还包括存储节点和电容器电介质之间的界面TiO 2 / TiON层。
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10.发明申请CAPACITOR DIELECTRIC COMPRISING SILICON-DOPED ZIRCONIUM OXIDE AND CAPACITOR USING THE SAME 有权含有硅氧化锆的电容器电介质和使用其的电容器公开(公告)号：US20130208403A1
公开(公告)日：2013-08-15
申请号：US13370312
申请日：2012-02-10
申请人： Noel Rocklein , Vishwanath Bhat , Chris Carlson
发明人： Noel Rocklein , Vishwanath Bhat , Chris Carlson
CPC分类号： H01L28/40 , H01L21/02159
摘要： A capacitor structure includes a storage node; a capacitor dielectric on the storage node; and a plate electrode on the capacitor dielectric. The capacitor dielectric may include a Si-doped ZrO2 layer or crystalline ZrSiOx with a Si/(Zr+Si) content ranging between 4-9% by atomic ratio. The capacitor structure further includes an interfacial TiO2/TiON layer between the storage node and the capacitor dielectric.
摘要翻译： 电容器结构包括存储节点; 存储节点上的电容器电介质; 和电容器电介质上的平板电极。 电容器电介质可以包括Si掺杂的ZrO 2层或Si /（Zr + Si）含量在4-9％原子比范围内的结晶ZrSiO x。 电容器结构还包括存储节点和电容器电介质之间的界面TiO 2 / TiON层。
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