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1.发明申请Three terminal magnetic sensing devices having base lead layers in-plane with collector substrate materials and methods of making the same 失效具有与集电体基板材料在一起的基极引线层的三端子磁感测装置及其制造方法公开(公告)号：US20070238198A1
公开(公告)日：2007-10-11
申请号：US11239178
申请日：2005-09-29
申请人： Robert Fontana , Jui-Lung Li , Jeffrey Lille , Sergio Nicoletti
发明人： Robert Fontana , Jui-Lung Li , Jeffrey Lille , Sergio Nicoletti
IPC分类号： H01L21/00
CPC分类号： G11B5/398 , B82Y10/00 , B82Y25/00 , G01R33/093 , G11B5/3903 , H01L29/66984
摘要： Three terminal magnetic sensing devices (TTMs) having base lead layers in-plane with collector substrate materials, and methods of making the same, are disclosed. In one illustrative example, a collector substrate having an elevated region and a recessed region adjacent the elevated region is provided. An insulator layer is formed in full-film over the collector substrate, and a base lead layer is formed in full-film over the insulator layer and in-plane with semiconductor materials of the elevated region. The insulator materials and the base lead materials that are formed over the elevated region are removed. A sensor stack structure having an emitter region and a base region is then formed over the elevated region such that part of the base region is formed over an end of the base lead layer. A base conductive via may be formed to contact base lead materials of the base lead layer at a suitable distance away from the sensor stack structure. Advantageously, the base conductive via formation may occur without causing damage to the sensor stack structure. Also, the base lead layer is formed in the recessed region of the collector substrate prior to the formation of the sensor stack structure such that the TTM may be entirely in-situ manufactured. Furthermore, the trackwidth of the TTM may be defined directly by the elevated region of the collector substrate. The TTM is suitable for incorporation into nanoscale devices which increase areal recording densities, therefore aiding the revolution in magnetic storage.
摘要翻译： 公开了具有与集电器基板材料在一起的基极引线层的三端子磁感测装置（TTM）及其制造方法。 在一个说明性示例中，提供了具有升高区域和与升高区域相邻的凹陷区域的收集器基板。 在集电体基板上形成绝缘体层，并且在绝缘体层上形成基极引线层，并且与升高区域的半导体材料在同一平面内形成基极引线层。 去除在升高区域上形成的绝缘体材料和基底引线材料。 然后在升高的区域上形成具有发射极区域和基极区域的传感器堆叠结构，使得基极区域的一部分形成在基极引线层的一端上。 可以形成基底导电通孔，以在离传感器堆叠结构适当的距离处接触基底引线层的基底引线材料。 有利地，可以在不会对传感器堆叠结构造成损害的情况下发生基底导电通孔形成。 此外，在形成传感器堆叠结构之前，基极引线层形成在集电体基板的凹陷区域中，使得TTM可以完全原位制造。 此外，TTM的轨道宽度可以由收集器基板的升高区域直接定义。 TTM适合纳入纳米级器件，增加面积记录密度，从而有助于磁存储的革命。
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2.发明申请Three terminal magnetic sensing device having a track width defined in a localized region by a patterned insulator and methods of making the same 有权具有通过图案化绝缘体在局部区域中限定的轨道宽度的三端子磁感测装置及其制造方法公开(公告)号：US20090161262A1
公开(公告)日：2009-06-25
申请号：US12004235
申请日：2007-12-20
摘要： A three terminal magnetic sensing device (TTM) having a trackwidth defined in a localized region by a patterned insulator, and methods of making the same, are disclosed. In one illustrative example, one or more first sensor layers (e.g. which includes a “base” layer) are formed over a collector substrate. A patterned insulator which defines a central opening exposing a top layer of the one or more first sensor layers is then formed. The central opening has a width for defining a trackwidth (TW) of the TTM. Next, one or more second sensor layers are formed over the top layer of the one or more first sensor layers through the central opening of the patterned insulator. The one or more second sensor layers may include a tunnel barrier layer formed in contact with the top layer of the one or more first sensor layers, as well as an “emitter” layer. Various embodiments and techniques are provided.
摘要翻译： 公开了具有通过图案化绝缘体在局部区域中限定的轨道宽度的三端磁感测装置（TTM）及其制造方法。 在一个说明性示例中，在收集器基板上形成一个或多个第一传感器层（例如包括“基”层）。 然后形成限定了暴露一个或多个第一传感器层的顶层的中心开口的图案化绝缘体。 中心开口具有用于定义TTM的轨道宽度（TW）的宽度。 接下来，通过图案化的绝缘体的中心开口，在一个或多个第一传感器层的顶层上形成一个或多个第二传感器层。 一个或多个第二传感器层可以包括与一个或多个第一传感器层的顶层接触形成的隧道势垒层以及“发射极”层。 提供了各种实施例和技术。
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3.发明授权Three terminal magnetic sensing devices having base lead layers in-plane with collector substrate materials and methods of making the same 失效具有与集电体基板材料在一起的基极引线层的三端子磁感测装置及其制造方法公开(公告)号：US07635599B2
公开(公告)日：2009-12-22
申请号：US11239178
申请日：2005-09-29
IPC分类号： H01L21/00
CPC分类号： G11B5/398 , B82Y10/00 , B82Y25/00 , G01R33/093 , G11B5/3903 , H01L29/66984
摘要： Three terminal magnetic sensing devices (TTMs) having base lead layers in-plane with collector substrate materials, and methods of making the same, are disclosed. In one illustrative example, a collector substrate having an elevated region and a recessed region adjacent the elevated region is provided. An insulator layer is formed in full-film over the collector substrate, and a base lead layer is formed in full-film over the insulator layer and in-plane with semiconductor materials of the elevated region. The insulator materials and the base lead materials that are formed over the elevated region are removed. A sensor stack structure having an emitter region and a base region is then formed over the elevated region such that part of the base region is formed over an end of the base lead layer. A base conductive via may be formed to contact base lead materials of the base lead layer at a suitable distance away from the sensor stack structure. Advantageously, the base conductive via formation may occur without causing damage to the sensor stack structure. Also, the base lead layer is formed in the recessed region of the collector substrate prior to the formation of the sensor stack structure such that the TTM may be entirely in-situ manufactured. Furthermore, the trackwidth of the TTM may be defined directly by the elevated region of the collector substrate. The TTM is suitable for incorporation into nanoscale devices which increase areal recording densities, therefore aiding the revolution in magnetic storage.
摘要翻译： 公开了具有与集电器基板材料在一起的基极引线层的三端子磁感测装置（TTM）及其制造方法。 在一个说明性示例中，提供了具有升高区域和与升高区域相邻的凹陷区域的收集器基板。 在集电体基板上形成绝缘体层，并且在绝缘体层上形成基极引线层，并且与升高区域的半导体材料在同一平面内形成基极引线层。 去除在升高区域上形成的绝缘体材料和基底引线材料。 然后在升高的区域上形成具有发射极区域和基极区域的传感器堆叠结构，使得基极区域的一部分形成在基极引线层的一端上。 可以形成基底导电通孔，以在离传感器堆叠结构适当的距离处接触基底引线层的基底引线材料。 有利地，可以在不会对传感器堆叠结构造成损害的情况下发生基底导电通孔形成。 此外，在形成传感器堆叠结构之前，基极引线层形成在集电体基板的凹陷区域中，使得TTM可以完全原位制造。 此外，TTM的轨道宽度可以由收集器基板的升高区域直接定义。 TTM适合纳入纳米级器件，增加面积记录密度，从而有助于磁存储的革命。
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4.发明授权Three terminal magnetic sensing device having a track width defined in a localized region by a patterned insulator and methods of making the same 有权具有通过图案化绝缘体在局部区域中限定的轨道宽度的三端子磁感测装置及其制造方法公开(公告)号：US08045298B2
公开(公告)日：2011-10-25
申请号：US12004235
申请日：2007-12-20
IPC分类号： G11B5/33
摘要： A three terminal magnetic sensing device (TTM) having a trackwidth defined in a localized region by a patterned insulator, and methods of making the same, are disclosed. In one illustrative example, one or more first sensor layers (e.g. which includes a “base” layer) are formed over a collector substrate. A patterned insulator which defines a central opening exposing a top layer of the one or more first sensor layers is then formed. The central opening has a width for defining a trackwidth (TW) of the TTM. Next, one or more second sensor layers are formed over the top layer of the one or more first sensor layers through the central opening of the patterned insulator. The one or more second sensor layers may include a tunnel barrier layer formed in contact with the top layer of the one or more first sensor layers, as well as an “emitter” layer. Various embodiments and techniques are provided.
摘要翻译： 公开了具有通过图案化绝缘体在局部区域中限定的轨道宽度的三端磁感测装置（TTM）及其制造方法。 在一个说明性示例中，在收集器基板上形成一个或多个第一传感器层（例如包括“基”层）。 然后形成限定了暴露一个或多个第一传感器层的顶层的中心开口的图案化绝缘体。 中心开口具有用于定义TTM的轨道宽度（TW）的宽度。 接下来，通过图案化的绝缘体的中心开口，在一个或多个第一传感器层的顶层上形成一个或多个第二传感器层。 一个或多个第二传感器层可以包括与一个或多个第一传感器层的顶层接触形成的隧道势垒层以及“发射极”层。 提供了各种实施例和技术。
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公开(公告)号：US20130120749A1
公开(公告)日：2013-05-16
申请号：US13811499
申请日：2011-07-19
申请人： Sergio Nicoletti
发明人： Sergio Nicoletti
CPC分类号： G01N15/0211 , G01N15/06 , G01N15/1484 , G01N21/53 , G01N21/532 , G01N2015/0038 , G01N2021/4726 , G01N2201/06113 , G01N2201/0873
摘要： The invention relates to a particle detector including a substrate (10, 30, 40) made of a semiconductor material, in which at least one through-cavity (11, 31, 41) is formed, defined by an input section (110) and an output section (111), wherein the input section thereof is to be connected to an airflow source, said substrate supporting: an optical means including at least one laser source (12, 32, 42), and at least one waveguide (13, 33, 43) connected to said at least one laser source and leading into the vicinity of the output section of said cavity; and photodetector means (14, 34, 44) located near the output section of said cavity and offset relative to the optical axis of the optical means.
摘要翻译： 本发明涉及一种粒子检测器，其包括由半导体材料制成的衬底（10,30,40），其中形成有由输入部分（110）限定的至少一个通孔（11,31,41）和 输出部分（111），其中输入部分将连接到气流源，所述基板支撑：包括至少一个激光源（12,32,42）的光学装置和至少一个波导（13， 33,33），连接到所述至少一个激光源并通向所述空腔的输出部分附近; 以及位于所述空腔的输出部分附近并相对于光学装置的光轴偏移的光电检测器装置（14,34,44）。
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6.发明授权EMR magnetic sensor having its active quantum well layer extending beyond an over-lying semiconductor layer end with tab and lead structure for improved electrical contact 有权EMR磁传感器具有其有源量子阱层延伸超过超过半导体层的端部，具有用于改善电接触的突片和引线结构公开(公告)号：US08035927B2
公开(公告)日：2011-10-11
申请号：US12021085
申请日：2008-01-28
申请人： Thomas Dudley Boone, Jr. , Liesl Folks , Robert E. Fontana, Jr. , Bruce Alvin Gurney , Jordan Asher Katine , Sergio Nicoletti
发明人： Thomas Dudley Boone, Jr. , Liesl Folks , Robert E. Fontana, Jr. , Bruce Alvin Gurney , Jordan Asher Katine , Sergio Nicoletti
IPC分类号： G11B5/39
CPC分类号： G01R33/093 , B82Y25/00 , G01R33/095 , G11B5/3993 , H01L43/08 , H01L43/12
摘要： An extraordinary magnetoresistive sensor (EMR sensor) having a lead structure that is self aligned with a magnetic shunt structure. To form an EMR sensor according to an embodiment of the invention, a plurality of layers are deposited to form quantum well structure such as a two dimensional electron gas structure (2DEG). A first mask structure is deposited having two openings, and a material removal process is performed to remove portions of the sensor material from areas exposed by the openings. The distance between the two openings in the first mask defines a distance between a set of leads and the shunt structure. A non-magnetic metal is then deposited. A second mask structure is then formed to define shape of the leads.
摘要翻译： 具有与磁分路结构自对准的引线结构的非凡的磁阻传感器（EMR传感器）。 为了形成根据本发明的实施例的EMR传感器，沉积多个层以形成诸如二维电子气体结构（2DEG）的量子阱结构。 沉积具有两个开口的第一掩模结构，并且执行材料去除处理以将传感器材料的部分从由开口暴露的区域中去除。 第一掩模中的两个开口之间的距离限定一组引线和分流结构之间的距离。 然后沉积非磁性金属。 然后形成第二掩模结构以限定引线的形状。
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公开(公告)号：US07940477B2
公开(公告)日：2011-05-10
申请号：US12678730
申请日：2008-09-16
CPC分类号： G01Q60/22 , B29D11/00009 , B29D11/00346 , G01Q70/12 , G11B7/1374 , G11B7/1387
摘要： The invention generally pertains to the field of solid immersion lenses for optical applications in high resolution microscopy. The lens of the invention includes a spherical sector limited by a planar surface and an object having nanometric dimensions arranged on the planar surface at the focus of said solid immersion lens. A light-opaque layer having a central opening with nanometric dimensions can be provided on the planar surface, said opening being centred on the focus of the solid immersion lens. The nano-object can be a tube or a thread having a cylindrical shape. The lens of the invention can be made using lithography techniques.
摘要翻译： 本发明一般涉及在高分辨率显微镜中用于光学应用的固体浸没透镜领域。 本发明的透镜包括由平面表面限制的球形部分和在所述固体浸没透镜的焦点处的平面表面上具有纳米尺寸的物体。 具有纳米尺寸的中心开口的不透光层可以设置在平坦表面上，所述开口以固体浸没透镜的焦点为中心。 纳米物体可以是具有圆柱形状的管或线。 本发明的透镜可以使用光刻技术制成。
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公开(公告)号：US08867035B2
公开(公告)日：2014-10-21
申请号：US13811499
申请日：2011-07-19
申请人： Sergio Nicoletti
发明人： Sergio Nicoletti
CPC分类号： G01N15/0211 , G01N15/06 , G01N15/1484 , G01N21/53 , G01N21/532 , G01N2015/0038 , G01N2021/4726 , G01N2201/06113 , G01N2201/0873
摘要： The invention relates to a particle detector including a substrate (10, 30, 40) made of a semiconductor material, in which at least one through-cavity (11, 31, 41) is formed, defined by an input section (110) and an output section (111), wherein the input section thereof is to be connected to an airflow source, said substrate supporting: an optical means including at least one laser source (12, 32, 42), and at least one waveguide (13, 33, 43) connected to said at least one laser source and leading into the vicinity of the output section of said cavity; and photodetector means (14, 34, 44) located near the output section of said cavity and offset relative to the optical axis of the optical means.
摘要翻译： 本发明涉及一种粒子检测器，其包括由半导体材料制成的衬底（10,30,40），其中形成有由输入部分（110）限定的至少一个通孔（11,31,41）和 输出部分（111），其中输入部分将连接到气流源，所述基板支撑：包括至少一个激光源（12,32,42）的光学装置和至少一个波导（13， 33,33），连接到所述至少一个激光源并通向所述空腔的输出部分附近; 以及位于所述空腔的输出部分附近并相对于光学装置的光轴偏移的光电检测器装置（14,34,44）。
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公开(公告)号：US08416283B2
公开(公告)日：2013-04-09
申请号：US12883525
申请日：2010-09-16
申请人： Stephane Getin , Pierre Ferret , Sergio Nicoletti
发明人： Stephane Getin , Pierre Ferret , Sergio Nicoletti
CPC分类号： H01L27/14625 , H01L27/14605 , H01L27/14629 , H01L27/14632 , H01L27/14685 , H01L27/14687
摘要： A 3D imaging device is comprised of a photodetector matrix, a layer of material fixed on a face of the photodetector matrix, the layer of material being capable of absorbing or reflecting light, an opening being formed in said layer of material at each photodetector, a layer of insulating material fixed on said layer of material capable of reflecting or absorbing light, the layer of insulating material having a face surrounding, in the body thereof, a set of G waveguides, each waveguide of the set of waveguides being positioned vertically in relation to said face, opposite an opening, the heights of the different waveguides, considered in relation to the face of the layer of insulating material, defining N distinct levels, N being a whole number greater than or equal to 2.
摘要翻译： 3D成像装置包括光电检测器矩阵，固定在光电检测器矩阵的表面上的材料层，能够吸收或反射光的材料层，在每个光电检测器的所述材料层中形成的开口， 固定在所述能够反射或吸收光的材料层上的绝缘材料层，所述绝缘材料层具有在其主体中包围一组G波导的表面，所述波导组中的每个波导相对于所述垂直方向定位 在与开口相对的所述面上，相对于绝缘材料层的面考虑不同波导的高度，限定N个不同的电平，N是大于或等于2的整数。
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公开(公告)号：US20110063416A1
公开(公告)日：2011-03-17
申请号：US12883525
申请日：2010-09-16
申请人： Stéphane GETIN , Pierre Ferret , Sergio Nicoletti
发明人： Stéphane GETIN , Pierre Ferret , Sergio Nicoletti
CPC分类号： H01L27/14625 , H01L27/14605 , H01L27/14629 , H01L27/14632 , H01L27/14685 , H01L27/14687
摘要： The invention concerns a 3D imaging device comprising a photodetector (2) matrix (M), a layer of material (1) fixed on a face of the photodetector matrix, the layer of material (1) being capable of absorbing or reflecting light, an opening (3) being formed in said layer of material at each photodetector (2), a layer of insulating material (6) fixed on said layer of material (1) capable of reflecting or absorbing light, the layer of insulating material (6) having a face surrounding, in the body thereof, a set of G waveguides (5), each waveguide (5) of the set of waveguides being positioned vertically in relation to said face, opposite an opening (3), the heights of the different waveguides, considered in relation to the face of the layer of insulating material, defining N distinct levels, N being a whole number greater than or equal to 2.
摘要翻译： 本发明涉及一种3D成像装置，其包括光电检测器（2）矩阵（M），固定在光电检测器矩阵的表面上的材料层（1），能够吸收或反射光的材料层（1）， 在每个光电检测器（2）处在所述材料层中形成开口（3），固定在能够反射或吸收光的所述材料层（1）上的绝缘材料层（6），所述绝缘材料层（6） 具有在其主体中围绕一组G波导（5）的面，该组波导的每个波导（5）相对于所述面垂直定位，与开口（3）相对，不同的高度 相对于绝缘材料层的面考虑的波导，限定N个不同的电平，N是大于或等于2的整数。
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