公开(公告)号：US5325224A

公开(公告)日：1994-06-28

申请号：US028243

申请日：1993-03-09

申请人： Robert J. Lang ,  Li-Jen Cheng ,  Joseph Maserjian

发明人： Robert J. Lang ,  Li-Jen Cheng ,  Joseph Maserjian

IPC分类号： H04Q11/00 ,  H04J14/08

CPC分类号： H04Q11/0001

摘要： A time-multiplexed, optically-addressed, crossbar switch (38) is provided using a two-dimensional, optically-addressed, reflective spatial light modulator (O-SLM) (20). Since the optical addressing is time-multiplexed, only N addressing lines are required for an N.times.N crossbar, rather than the N.sup.2 lines needed in the prior art. This reduction in addressing lines makes possible the development of enormous crossbar switches, such as 100.times.100, for the first time. In addition, since data paths remain entirely in the optics domain, data speeds can reach the multi-gigabit level. In the switch, a row (40) of N inputs (42) at the "read" wavelength is spread over one axis of the O-SLM. The light is refocused along the other axis to an output array (48) of detectors (50), so that each input has the potential to talk to any one output. The O-SLM is normally off, i.e., non-reflective, so that the output is, in the absence of an input signal, zero. A one-dimensional array (52) of lasers (54) at the "write" wavelength is imaged onto the O-SLM. Each laser scans across an entire row of the O-SLM; where the laser is on, it turns on a portion of the O-SLM and establishes a connection between a particular input and a particular output. A full row is scanned in a time much shorter than the response time of the O-SLM, so that state of the O-SLM is capacitively stored and dynamically refreshed. The scanning is accomplished by tuning the wavelength of the laser and passing it through a grating, which sweeps the beam in space.

摘要翻译： 使用二维光学寻址的反射空间光调制器（O-SLM）（20）提供时间复用的光学寻址的交叉开关（38）。 由于光寻址被时分复用，所以对于N×N交叉开关仅需要N个寻址线，而不是现有技术中所需的N2线。 寻址线路的这种减少使得可能首次开发巨大的交叉开关，如100x100。 此外，由于数据路径完全保留在光学领域，因此数据速度可以达到千兆级。 在开关中，在“读取”波长处的N个输入（42）的一行（40）分布在O-SLM的一个轴上。 沿着另一轴将光重新聚焦到检测器（50）的输出阵列（48），使得每个输入具有与任何一个输出通信的潜力。 O-SLM通常关闭，即不反射，使得输出在没有输入信号的情况下为零。 在“写入”波长处的激光器（54）的一维阵列（52）被成像到O-SLM上。 每个激光扫描O-SLM的整行; 在激光器打开的地方，它打开O-SLM的一部分，并建立特定输入和特定输出之间的连接。 在比O-SLM的响应时间短得多的时间内扫描完整行，使得O-SLM的状态被电容性地存储和动态刷新。 扫描通过调整激光器的波长并将其通过光栅来实现，该光栅在空间中扫描光束。

公开(公告)号：US4772785A

公开(公告)日：1988-09-20

申请号：US125021

申请日：1987-11-24

申请人： Li-Jen Cheng ,  Hua-Kuang Liu

发明人： Li-Jen Cheng ,  Hua-Kuang Liu

IPC分类号： G02F1/03 ,  H01J3/14

CPC分类号： G02F1/0338

摘要： Apparatus is provided which greatly reduces the intensity of bright portions of an image while only moderately reducing the brightness of dimmer portions of the image, to thereby compress the range of light intensities to facilitate detection of the image. The apparatus includes a light detector device formed by a chip of photorefractive material. A two-dimensional array of light beams from an object to be detected, passes through a beam splitter to form two arrays of light beams. The two arrays of light beams are directed at different angles against a surface of the chip of photorefractive material, the two arrays of light beams forming coincident images on the surface. One of the two-dimensional arrays of beams emerging from an opposite surface of the chip has a lower range of intensities, to facilitate detection of the object despite very bright spots on its image. The other array of light beams energing from the chip has a greater range of intensities than the unprocessed image of the object.

摘要翻译： 提供了大大降低图像的亮部的强度的装置，同时仅适度地降低图像的调光部分的亮度，从而压缩光强度范围以便于图像的检测。 该装置包括由光折射材料芯片形成的光检测器装置。 来自被检测物体的光束的二维阵列通过分束器以形成两个光束阵列。 两个光束阵列相对于光折射材料芯片的表面以不同的角度被引导，两个光束阵列在表面上形成一致的图像。 从芯片的相对表面出射的二维光束阵列中的一个具有较低的强度范围，以便于尽管在其图像上存在非常亮点的物体的检测。 从芯片通电的其他光束阵列具有比未处理的对象图像更大的强度范围。

公开(公告)号：US4665277A

公开(公告)日：1987-05-12

申请号：US838648

申请日：1986-03-11

申请人： Chih Sah ,  Li-Jen Cheng

发明人： Chih Sah ,  Li-Jen Cheng

IPC分类号： H01L27/142 ,  H01L31/11 ,  H01L31/06

CPC分类号： H01L31/1105 ,  H01L31/0475 ,  Y02E10/50

摘要： Front surface contact floating emitter solar cell "transistors" having a semiconductor body (n-type) and floating emitter sections (p-type) diffused or implanted in the front surface are provided with sections diffused or implanted in the front surface between the floating emitter sections, but isolated from the floating emitter sections, for use either as a base contact to the n-type semiconductor body, in which case the section is doped n.sup.+, or as a collector for the adjacent emitter sections, in which case the section is doped p.sup.+. In the first case, the structure is provided with p.sup.+ semiconductor material on the back to serve as a collector, and in the second case with n.sup.+ semiconductor material on the back to serve as a base contact. In either case, the semiconductor material on the back may be a starting substrate of suitably doped semiconductor material. In the case of the substrate being the collector, a groove is etched to isolate the collector junctions from saw damage on the edge. Using ion implantation techniques, floating emitter solar cell "transistor" structures may be fabricated in an implanted well (n-type for p-n-p transistors) to obviate the need for a groove.

摘要翻译： 在前表面扩散或注入的具有半导体本体（n型）和浮动发射极部分（p型）的前表面接触浮置发射极太阳能电池“晶体管”设置有扩散或植入在浮置发射极 但是与浮动发射极部分隔离，用作n型半导体本体的基极接触，在这种情况下，该部分被掺杂为n +，或用作相邻发射极部分的集电极，在这种情况下，该部分为 掺杂p +。 在第一种情况下，该结构在背面设置有p +半导体材料以用作集电极，在第二种情况下，在背面具有n +半导体材料以用作基极接触。 在任一情况下，背面的半导体材料可以是适当掺杂的半导体材料的起始衬底。 在基板是集电器的情况下，蚀刻凹槽以将集电器接头与边缘上的锯损坏隔离。 使用离子注入技术，可以在注入阱（p型n-p型晶体管的n型）中制造浮置发射极太阳能电池“晶体管”结构，以消除对凹槽的需要。

公开(公告)号：US5150228A

公开(公告)日：1992-09-22

申请号：US797569

申请日：1991-11-25

申请人： Tsuen-Hsi Liu ,  Li-Jen Cheng

发明人： Tsuen-Hsi Liu ,  Li-Jen Cheng

IPC分类号： G06E3/00 ,  G06K9/58

CPC分类号： G06E3/003 ,  G06K9/58

摘要： Edge enhancement of an input image by four-wave mixing a first write beam with a second write beam in a photorefractive crystal, e.g., GaAs, achieved for VanderLugt optical correlation with an edge enhanced reference image by optimizing the power ratio of a second write beam to the first write beam, e.g., 70:1, and optimizing the power ratio of a read beam, which carries the reference image to the first write beam, e.g., 100:701. Liquid crystal TV panels are employed as spatial light modulators in order to change the input and reference images in real time.

摘要翻译： 通过在光折射晶体（例如GaAs）中将第一写入光束与第二写入光束四波混合来输入图像的边缘增强，通过优化第二写入光束的功率比来实现与边缘增强参考图像的VanderLugt光学相关 到第一个写入光束，例如70：1，并优化将参考图像传送到第一个写入光束的读取光束的功率比例如100：701。 采用液晶电视面板作为空间光调制器，以实时改变输入和参考图像。

公开(公告)号：US4843439A

公开(公告)日：1989-06-27

申请号：US125676

申请日：1987-11-25

申请人： Li-Jen Cheng

发明人： Li-Jen Cheng

IPC分类号： H01L27/144 ,  H01L31/0352 ,  H01L31/101

CPC分类号： B82Y20/00 ,  H01L27/1443 ,  H01L31/035254 ,  H01L31/101

摘要： An infrared photodetector is formed of a heavily doped p-type Ge.sub.x Si.sub.1-x /Si superlattice in which x is pre-established during manufacture in the range 0 to 100 percent. A custom tailored photodetector that can differentiate among close wavelengths in the range of 2.7 to 50 microns is fabricated by appropriate selection of the alloy constituency value, x, to establish a specific wavelength at which photodetection cut-off will occur.

摘要翻译： 红外光电检测器由重掺杂的p型GexSi1-x / Si超晶格形成，其中x在制造期间预先建立在0至100％的范围内。 可以通过适当选择合金选择值x来制造可以区分2.7至50微米范围内的近似波长的定制的光电检测器，以建立将发生光电检测截止的特定波长。

公开(公告)号：US5376807A

公开(公告)日：1994-12-27

申请号：US46331

申请日：1993-04-07

申请人： Tsuen-Hsi Liu ,  Tien-Hsin Chao ,  Li-Jen Cheng

发明人： Tsuen-Hsi Liu ,  Tien-Hsin Chao ,  Li-Jen Cheng

IPC分类号： G06E3/00 ,  G06F15/336 ,  G06K9/64

CPC分类号： G06E3/003

摘要： A new type of optical correlator performs motion detection or background clutter suppression and correlation simultaneously in a single photorefractive crystal, and is useful for moving target identification and tracking and for stationary clutter rejection. The correlation is of the VanderLugt type and the motion detection or background clutter suppression is based on the erasing property of photorefractive crystals.

摘要翻译： 一种新型的光学相关器在单个光折变晶体中同时执行运动检测或背景杂波抑制和相关性，并且可用于移动目标识别和跟踪以及静态杂波抑制。 相关性为VanderLugt类型，运动检测或背景杂波抑制基于光折射晶体的擦除性质。

公开(公告)号：US5018852A

公开(公告)日：1991-05-28

申请号：US568129

申请日：1990-08-16

申请人： Li-Jen Cheng ,  Tsuen-Hsi Liu

发明人： Li-Jen Cheng ,  Tsuen-Hsi Liu

IPC分类号： G01P3/36 ,  G01S17/50 ,  G01S17/66 ,  G01S17/89

CPC分类号： G01P3/36 ,  G01S17/50 ,  G01S17/66 ,  G01S17/89

摘要： A method and apparatus for detecting and tracking moving objects in a noise environment cluttered with fast- and slow-moving objects and other time-varying background. A pair of phase conjugate light beams carrying the same spatial information commonly cancel each other out through an image subtraction process in a phase conjugate interferometer, wherein gratings are formed in a fast photorefractive phase conjugate mirror material. In the steady state, there is no output. When the optical path of one of the two phase conjugate beams is suddenly changed, the return beam loses its phase conjugate nature and the interferometer is out of balance, resulting in an observable output. The observable output lasts until the phase conjugate nature of the beam has recovered. The observable time of the output signal is roughly equal to the formation time of the grating. If the optical path changing time is slower than the formation time, the change of optical path becomes unobservable, because the index grating can follow the change. Thus, objects traveling at speeds which result in a path changing time which is slower than the formation time are not observable and do not clutter the output image view.

摘要翻译： 一种用于在与快速和慢移物体和其他时变背景混杂的噪声环境中检测和跟踪移动物体的方法和装置。 携带相同空间信息的一对相位共轭光通常通过相位共轭干涉仪中的图像相减处理相互抵消，其中光栅形成在快速光折射相位共轭镜材料中。 在稳定状态下，没有输出。 当两相共轭光之一的光路突然变化时，返回光束失去其相位共轭特性，干涉仪失去平衡，产生可观察的输出。 可观察的输出持续直到光束的相位共轭特性恢复。 输出信号的可观察时间大致等于光栅的形成时间。 如果光路变化时间比形成时间慢，光路的变化变得不可观察，因为折射率光栅可以跟随变化。 因此，导致比形成时间慢的路径变化时间的速度行驶的物体是不可观察的，并且不会混乱输出图像视图。

公开(公告)号：US4948212A

公开(公告)日：1990-08-14

申请号：US234519

申请日：1988-08-22

申请人： Li-Jen Cheng ,  Gregory O. Gheen

发明人： Li-Jen Cheng ,  Gregory O. Gheen

IPC分类号： G02F1/35 ,  G06E3/00

CPC分类号： G06E3/005 ,  G02F1/3538 ,  G03H2001/0268 ,  G03H2260/54

摘要： Optical processing using photorefractive GaAs and other compound semiconductor crystals (28) is achieved in a four-wave mixing configuration. Potential applications of optical processing include spatial light modulation, phase conjugation, correlation, convolution, edge enhancement, matrix multiplication, incoherent-to-coherent conversion, and many others. In particular embodiments, optical processing, matrix multiplication, and integrated semiconductor optical information processors are demonstrated. In the case of integration of semiconductors and optical information processors, a spatial light modulator (88) is fabricated on a surface of a compound semiconductor crystal to form an integrated device (86). The device uses the spatial light modulator to transfer electrical data into an optical form and then employs the photorefractive effect in the bulk for processing the data.

摘要翻译： 使用光折射GaAs和其他化合物半导体晶体（28）的光学处理在四波混频配置中实现。 光学处理的潜在应用包括空间光调制，相位共轭，相关，卷积，边缘增强，矩阵乘法，非相干到相干转换等等。 在具体实施例中，演示了光学处理，矩阵乘法和集成半导体光信息处理器。 在半导体和光信息处理器的集成的情况下，在化合物半导体晶体的表面上制造空间光调制器（88）以形成集成器件（86）。 该装置使用空间光调制器将电数据转换为光学形式，然后在批量中采用光折射效应来处理数据。

公开(公告)号：US4898436A

公开(公告)日：1990-02-06

申请号：US172007

申请日：1988-03-23

申请人： Li-Jen Cheng ,  Gregory O. Gheen ,  Afshin Partovi

发明人： Li-Jen Cheng ,  Gregory O. Gheen ,  Afshin Partovi

IPC分类号： G02F1/015 ,  G02F1/03

CPC分类号： G02F1/015 ,  G02F1/0338

摘要： Spatial light modulation (22) in a III-V single crystal (12), e.g., gallium arsenide, is achieved using the photorefractive effect. Polarization rotation created by beam coupling is utilized in one embodiment. In particular, information (16)on a control beam (14) incident on the crystal is transferred to an input beam (10), also incident on the crystal. An output beam (18) modulated in intensity is obtained by passing the polarization-modulated input beam through a polarizer (20).

摘要翻译： 使用光折射效应实现III-V单晶（12）中的空间光调制（22），例如砷化镓。 在一个实施例中利用由光束耦合产生的极化旋转。 特别地，入射到晶体上的控制光束（14）上的信息（16）被传送到也入射到晶体上的输入光束（10）。 通过使偏振调制的输入光束通过偏振器（20）来获得强度调制的输出光束（18）。

公开(公告)号：US4711857A

公开(公告)日：1987-12-08

申请号：US901114

申请日：1986-08-28

申请人： Li-Jen Cheng

发明人： Li-Jen Cheng

IPC分类号： H01L31/0352 ,  H01L31/101 ,  H01L31/04 ,  H01L29/12 ,  H01L31/06

CPC分类号： B82Y20/00 ,  H01L31/035254 ,  H01L31/101

摘要： An infrared photodetector is formed of a heavily doped p-type Ge.sub.x Si.sub.1-x /Si superlattice in which x is pre-established during manufacture in the range 0 to 100 percent. A custom tailored photodetector that can differentiate among close wavelengths in the range of 2.7 to 50 microns is fabricated by appropriate selection of the alloy constituency value, x, to establish a specific wavelength at which photodetection cut-off will occur.

摘要翻译： 红外光电检测器由重掺杂的p型GexSi1-x / Si超晶格形成，其中x在制造期间预先建立在0至100％的范围内。 可以通过适当选择合金选择值x来制造可以区分2.7至50微米范围内的近似波长的定制的光电检测器，以建立将发生光电检测截止的特定波长。