摘要:
The present invention provides a chemical mechanical polishing method for the planarization of shallow trench isolation structure and other integrated circuit structures. The method of the invention comprises the steps of providing a substrate having a plurality of patterned regions and polishing the substrate with a chemical mechanical polishing slurry comprising small abrasive particles having a mean diameter of between about 2 and 30 nm and large abrasive particles having a mean diameter of between 2 and 10 times larger than the mean diameter of the small abrasive particles. The chemical mechanical polishing slurries can also include viscosity additives and etchants for use in the invention.
摘要:
The present invention provides a chemical mechanical polishing slurry for the planarization of shallow trench isolation structures and other integrated circuit structures. The chemical mechanical polishing slurry of this invention comprises small abrasive particles having a mean diameter of between about 2 and 30 nm and large abrasive particles having a mean diameter of between 2 and 10 times larger than the mean diameter of the small abrasive particles. In use, the chemical mechanical polishing slurry of this invention can also include viscosity additives and etchants.
摘要:
A polishing method uses a dry particulate solids composition that is reconstituted into an aqueous composition for delivery to a polishing apparatus. In one aspect of the invention, the dry particulate solids composition is provided in a package size that is just substantially sufficient to make a reconstituted slurry for completing the polishing of a predetermined number of work pieces. The quantity of dry particulate solids delivered to a reconstitution apparatus can be an amount appropriate for polishing one work piece or a small number of work pieces, or the system can operate in larger batches or a continuous flow mode. The reconstituted aqueous polishing solution can be monitored for physical or chemical properties, filtered, blended with other chemical mixtures, or modified in other ways prior to being used in the polishing apparatus.
摘要:
This invention relates to a tubular apparatus for UV curing coatings on a continuous filament in which concentric tubes are provided and through which the filament passes after being coated for curing the coating, with the apparatus having the first inner tube which passes the UV light through the tube to cure the filament passing therethrough, and a second concentric tube superposed over the first tube and spaced therefrom which reflects IR light and passes UV light to prevent burning and destroying the coating on the filament as it passes through the first tube.
摘要:
A lamp for more uniformly irradiating surfaces of fibers (including ribbon-shaped fibers), such as optical fibers, and methods of using such lamp, are provided. The lamp has primary and secondary elliptical-shaped reflectors, forming an elliptical space therebetween with the fibers in the vicinity of one focal point of the elliptical space, on the major axis of the elliptical space. The lamp bulb is centered on this major axis of the elliptical space, in the vicinity of the other focal point to provide a dispersed ray pattern at the fiber for more uniformity over the surfaces of the fibers. Ends of the primary reflector can be provided with end reflectors which can have mounts for the lamp bulb. The lamp can be used to cure a light curable coating (e.g., ink, polymer) on the fiber.
摘要:
This invention relates to a tubular apparatus for UV curing coatings on a continuous filament in which concentric tubes are provided and through which the filament passes after being coated for curing the coating, with the apparatus having the first inner tube which passes the UV light through the tube to cure the filament passing therethrough, and a second concentric tube superposed over the first tube and spaced therefrom which reflects IR light and passes UV light to prevent burning and destroying the coating on the filament as it passes through the first tube.
摘要:
A moat pattern (19) is formed in a first layer of material (11) to improve the profile of a planarization process. The presence of the moat pattern (19) in the periphery of a semiconductor substrate (10,30) moves the effects of the relaxation distance (13) away from the critical areas of the semiconductor substrate (30). The moat pattern (19) is formed during a photolithographic process by using a photolithographic mask (20) that has a portion (22) that defines and patterns the moat pattern (19). The moat pattern (19) is defined as edge dice (31) are patterned across the semiconductor substrate (30).