Chemical mechanical polishing composition and method of polishing a
substrate
    1.
    发明授权
    Chemical mechanical polishing composition and method of polishing a substrate 有权
    化学机械抛光组合物和抛光底物的方法

    公开(公告)号:US6143662A

    公开(公告)日:2000-11-07

    申请号:US252279

    申请日:1999-02-18

    摘要: The present invention provides a chemical mechanical polishing method for the planarization of shallow trench isolation structure and other integrated circuit structures. The method of the invention comprises the steps of providing a substrate having a plurality of patterned regions and polishing the substrate with a chemical mechanical polishing slurry comprising small abrasive particles having a mean diameter of between about 2 and 30 nm and large abrasive particles having a mean diameter of between 2 and 10 times larger than the mean diameter of the small abrasive particles. The chemical mechanical polishing slurries can also include viscosity additives and etchants for use in the invention.

    摘要翻译: 本发明提供了一种用于平坦化浅沟槽隔离结构和其他集成电路结构的化学机械抛光方法。 本发明的方法包括以下步骤:提供具有多个图案化区域的基材和用包含平均直径在约2nm至30nm之间的小磨料颗粒的化学机械抛光浆料抛光该基材,以及具有平均值的大磨料颗粒 直径比小磨料颗粒的平均直径大2至10倍。 化学机械抛光浆料还可以包括用于本发明的粘度添加剂和蚀刻剂。

    Small particle size chemical mechanical polishing composition
    2.
    发明授权
    Small particle size chemical mechanical polishing composition 有权
    小粒径化学机械抛光组合物

    公开(公告)号:US06365520B1

    公开(公告)日:2002-04-02

    申请号:US09620150

    申请日:2000-07-20

    IPC分类号: H01L21302

    摘要: The present invention provides a chemical mechanical polishing slurry for the planarization of shallow trench isolation structures and other integrated circuit structures. The chemical mechanical polishing slurry of this invention comprises small abrasive particles having a mean diameter of between about 2 and 30 nm and large abrasive particles having a mean diameter of between 2 and 10 times larger than the mean diameter of the small abrasive particles. In use, the chemical mechanical polishing slurry of this invention can also include viscosity additives and etchants.

    摘要翻译: 本发明提供了用于平坦化浅沟槽隔离结构和其它集成电路结构的化学机械抛光浆料。 本发明的化学机械抛光浆料包括平均直径为约2nm至30nm的小磨料颗粒和平均直径比小磨料颗粒的平均直径大2至10倍的较大磨料颗粒。 在使用中,本发明的化学机械抛光浆料还可以包括粘度添加剂和蚀刻剂。

    Polishing method using a reconstituted dry particulate polishing composition
    3.
    发明授权
    Polishing method using a reconstituted dry particulate polishing composition 失效
    使用重构的干燥颗粒抛光组合物的抛光方法

    公开(公告)号:US06447375B2

    公开(公告)日:2002-09-10

    申请号:US09837506

    申请日:2001-04-18

    IPC分类号: B24B100

    摘要: A polishing method uses a dry particulate solids composition that is reconstituted into an aqueous composition for delivery to a polishing apparatus. In one aspect of the invention, the dry particulate solids composition is provided in a package size that is just substantially sufficient to make a reconstituted slurry for completing the polishing of a predetermined number of work pieces. The quantity of dry particulate solids delivered to a reconstitution apparatus can be an amount appropriate for polishing one work piece or a small number of work pieces, or the system can operate in larger batches or a continuous flow mode. The reconstituted aqueous polishing solution can be monitored for physical or chemical properties, filtered, blended with other chemical mixtures, or modified in other ways prior to being used in the polishing apparatus.

    摘要翻译: 抛光方法使用干重的颗粒固体组合物,其被重构成水性组合物以输送到抛光装置。 在本发明的一个方面,干燥颗粒固体组合物以包装尺寸提供,该包装尺寸基本上足以制备用于完成预定数量工件的抛光的重构浆料。 输送到重构装置中的干燥颗粒固体的量可以是适合于抛光一个工件或少量工件的量,或者该系统可以较大批量或连续流动模式操作。 可以监测重构的水性抛光溶液的物理或化学性质,过滤,与其它化学混合物混合,或者在用于抛光装置之前以其它方式改性。

    Method for UV curing a coating on a filament or the like
    5.
    发明授权
    Method for UV curing a coating on a filament or the like 失效
    紫外线固化丝等上的涂层的方法

    公开(公告)号:US06511715B2

    公开(公告)日:2003-01-28

    申请号:US10171985

    申请日:2002-06-17

    申请人: Robert L. Rhoades

    发明人: Robert L. Rhoades

    IPC分类号: C08F248

    摘要: This invention relates to a tubular apparatus for UV curing coatings on a continuous filament in which concentric tubes are provided and through which the filament passes after being coated for curing the coating, with the apparatus having the first inner tube which passes the UV light through the tube to cure the filament passing therethrough, and a second concentric tube superposed over the first tube and spaced therefrom which reflects IR light and passes UV light to prevent burning and destroying the coating on the filament as it passes through the first tube.

    摘要翻译: 本发明涉及一种用于在连续长丝上UV固化涂层的管状装置,其中提供同心管,并且在被涂覆以固化涂层之后丝穿过该管状装置,该装置具有第一内管,该第一内管使UV光通过 管,以固化穿过其中的细丝,以及叠置在第一管上方并与之隔开的第二同心管,其反射IR光并通过UV光,以防止在灯丝穿过第一管时燃烧和破坏灯丝上的涂层。

    Apparatus for UV curing a coating on a filament or the like and method of manufacturing

    公开(公告)号:US06419749B1

    公开(公告)日:2002-07-16

    申请号:US09434291

    申请日:1999-11-05

    申请人: Robert L. Rhoades

    发明人: Robert L. Rhoades

    IPC分类号: B05B500

    摘要: This invention relates to a tubular apparatus for UV curing coatings on a continuous filament in which concentric tubes are provided and through which the filament passes after being coated for curing the coating, with the apparatus having the first inner tube which passes the UV light through the tube to cure the filament passing therethrough, and a second concentric tube superposed over the first tube and spaced therefrom which reflects IR light and passes UV light to prevent burning and destroying the coating on the filament as it passes through the first tube.

    Method for planarizing a semiconductor layer
    8.
    发明授权
    Method for planarizing a semiconductor layer 失效
    半导体层的平坦化方法

    公开(公告)号:US5728507A

    公开(公告)日:1998-03-17

    申请号:US603797

    申请日:1996-02-20

    CPC分类号: H01L21/31053

    摘要: A moat pattern (19) is formed in a first layer of material (11) to improve the profile of a planarization process. The presence of the moat pattern (19) in the periphery of a semiconductor substrate (10,30) moves the effects of the relaxation distance (13) away from the critical areas of the semiconductor substrate (30). The moat pattern (19) is formed during a photolithographic process by using a photolithographic mask (20) that has a portion (22) that defines and patterns the moat pattern (19). The moat pattern (19) is defined as edge dice (31) are patterned across the semiconductor substrate (30).

    摘要翻译: 在第一材料层(11)中形成护套图案(19)以改善平坦化工艺的轮廓。 在半导体衬底(10,30)的周围存在护套图案(19)使得松弛距离(13)的作用远离半导体衬底(30)的临界区域。 护套图案(19)在光刻工艺期间通过使用具有限定和图案护套图案(19)的部分(22)的光刻掩模(20)形成。 护套图案(19)被定义为跨越半导体衬底(30)图案的边缘骰子(31)。