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公开(公告)号：US4612465A
公开(公告)日：1986-09-16
申请号：US734031
申请日：1985-05-13
IPC分类号： H01L21/306 , H01L29/06 , H01L29/423 , H01L29/78 , H03K17/687
CPC分类号： H01L29/4236 , H01L21/306 , H01L29/0642 , H01L29/7825
摘要： Lateral FET structure is disclosed for bidirectional power switching, including AC application. A notch extends downwardly from a top major surface to separate left and right source regions and left and right channel regions, and direct the drift region current path between the channels around the bottom of the notch. Split gate electrodes in the notch proximate the channels control bidirectional conduction, and are at non-common potentials in the OFF state to increase breakdown voltage. Self-shielding of the gates is also disclosed to further increase OFF state breakdown voltage.
摘要翻译： 公开了用于双向功率切换的横向FET结构，包括AC应用。 凹口从顶部主表面向下延伸以分离左和右源极区域以及左右沟道区域，并且引导位于凹口底部周围的通道之间的漂移区域电流路径。 在通道附近的切口中的分离栅极电极控制双向导通，并且处于断开状态的非公共电位以增加击穿电压。 还公开了栅极的自屏蔽以进一步增加OFF状态击穿电压。
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公开(公告)号：US4546367A
公开(公告)日：1985-10-08
申请号：US390473
申请日：1982-06-21
IPC分类号： H01L21/306 , H01L21/336 , H01L29/06 , H01L29/423 , H01L29/49 , H01L29/78
CPC分类号： H01L29/7825 , H01L21/306 , H01L29/66704 , H01L29/0653 , H01L29/42368 , H01L29/4975
摘要： Lateral FET structure is disclosed for bidirectional power switching, including AC application. A notch extends downwardly from a top major surface to separate left and right source regions and left and right channel regions, and direct the drift region current path between the channels around the bottom of the notch. Gate electrode means in the notch proximate the channels controls bidirectional conduction.
摘要翻译： 公开了用于双向功率切换的横向FET结构，包括AC应用。 凹口从顶部主表面向下延伸以分离左和右源极区域以及左右沟道区域，并且引导位于凹口底部周围的通道之间的漂移区域电流路径。 靠近通道的凹口中的栅极电极装置控制双向导通。
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公开(公告)号：US4675979A
公开(公告)日：1987-06-30
申请号：US863311
申请日：1986-05-15
IPC分类号： H01L45/00 , H01L21/473 , H01L21/475 , H01L49/02
CPC分类号： H01L45/00 , Y10S438/957 , Y10T29/417
摘要： MOMOM structural geometry and fabrication techniques are disclosed. A first oxidizable metal strip (3) and a second coplanar nonoxidizable metal strip (6) are deposited on an insulating substrate (2). An insulating layer (12) is deposited on the metal strips, followed by deposition of a third nonoxidizable metal layer. A generally vertical notch (14) is cut through the layers to the substrate providing left and right sections (15, 16) of the third metal layer, left and right sections (19, 20) of the insulating layer, and the first and second metal layers with facing edges (23, 24) spaced by the notch therebetween. An oxidized tip (25) is formed at the facing edge of the first metal layer. A fourth metal layer (26) is ballistically deposited over the oxidized tip and the left section of the third metal layer, using the notch edge of the right section of the third metal layer as a shadow mask, followed by oxidization of the fourth metal layer. A fifth horizontal metal layer (30) is ballistically deposited by a vertically columnated beam along the substrate across the bottom (28) of the notch between the oxidation layer on the fourth metal layer and the facing edge (24) of the second metal layer. The M-O-M-O-M structure is provided by the first metal layer (3)--the oxidized tip (25)--the fourth metal layer (26) at a generally vertical portion (39)--the oxidation layer (29) on the fourth metal layer at a generally vertical portion (41)--the fifth metal layer (30) and the second metal layer (6).
摘要翻译： 公开了MOMOM结构几何形状和制造技术。 第一可氧化金属带（3）和第二共面不可氧化金属条（6）沉积在绝缘基板（2）上。 绝缘层（12）沉积在金属条上，随后沉积第三个不可氧化的金属层。 大致垂直的切口（14）穿过层向基板切割，提供第三金属层的左和右部分（15,16），绝缘层的左部分和右部分（19,20）以及第一和第二 具有由它们之间的切口间隔开的相对边缘（23,24）的金属层。 在第一金属层的相对边缘处形成氧化的尖端（25）。 使用第三金属层的右部分的切口边缘作为荫罩，将第四金属层（26）弹性地沉积在第三金属层的氧化的末端和左侧部分上，然后氧化第四金属层 。 第五水平金属层（30）通过垂直的柱状光束沿着衬底穿过第四金属层上的氧化层和第二金属层的相对边缘（24）之间的凹口的底部（28）而弹道沉积。 MOMOM结构由第一金属层（3）提供 - 氧化末端（25） - 第四金属层（26）处于大致垂直的部分（39），第四金属层上的氧化层（29） 大致垂直部分（41） - 第五金属层（30）和第二金属层（6）。
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公开(公告)号：US4635084A
公开(公告)日：1987-01-06
申请号：US618432
申请日：1984-06-08
IPC分类号： H01L21/337 , H01L29/10 , H01L29/808 , H01L29/80
CPC分类号： H01L29/808 , H01L29/1058
摘要： A power JFET (2) has a common drift region (4) between split first and second longitudinally separated sets of rows (6, 8) of alternating conductivity type layers (10-20 and 21-31) forming a plurality of channels (11, 13, 15, 17, 19, 22, 24, 26, 28 and 30). The JFET has an ON state conducting bidirectional current horizontally longitudinally through the common drift region and the channels. The JFET has an OFF state blocking current flow through the channels due to horizontally lateral depletion pinch-off. The layers of the rows extend vertically and horizontally longitudinally such that the direction of layering extends horizontally laterally. Particular gate structure is disclosed.
摘要翻译： 功率JFET（2）在交替导电类型层（10-20和21-31）的分割的第一和第二纵向分离的行（6,8）组之间具有共同漂移区域（4），形成多个通道（11 ，13，15，17，19，22，24，26，28及30条）。 JFET具有导通状态，其通过公共漂移区域和通道水平纵向地传导双向电流。 JFET由于水平横向消耗夹断而具有截止通过通道的电流的截止状态。 这些行的纵向和纵向纵向延伸，使得层的方向横向地横向延伸。 公开了特定的门结构。
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公开(公告)号：US4633278A
公开(公告)日：1986-12-30
申请号：US683728
申请日：1984-12-19
CPC分类号： H01L45/00
摘要： MOMOM structural geometry and fabrication techniques are disclosed. A first oxidizable metal strip (3) and a second coplanar nonoxidizable metal strip (6) are deposited on an insulating substrate (2). An insulating layer (12) is deposited on the metal strips, followed by deposition of a third nonoxidizable metal layer. A generally vertical notch (14) is cut through the layers to the substrate providing left and right sections (15, 16) of the third metal layer, left and right sections (19, 20) of the insulating layer, and the first and second metal layers with facing edges (23, 24) spaced by the notch therebetween. An oxidized tip (25) is formed at the facing edge of the first metal layer. A fourth metal layer (26) is ballistically deposited over the oxidized tip and the left section of the third metal layer, using the notch edge of the right section of the third metal layer as a shadow mask, followed by oxidization of the fourth metal layer. A fifth horizontal metal layer (30) is ballistically deposited by a vertically columnated beam along the substrate across the bottom (28) of the notch between the oxidation layer on the fourth metal layer and the facing edge (24) of the second metal layer. The M-O-M-O-M structure is provided by the first metal layer (3)-the oxidized tip (25)-the fourth metal layer (26) at a generally vertical portion (39)-the oxidation layer (29) on the fourth metal layer at a generally vertical portion (41)-the fifth metal layer (30) and the second metal layer (6).
摘要翻译： 公开了MOMOM结构几何形状和制造技术。 第一可氧化金属带（3）和第二共面不可氧化金属条（6）沉积在绝缘基板（2）上。 绝缘层（12）沉积在金属条上，随后沉积第三个不可氧化的金属层。 大致垂直的切口（14）穿过层向基板切割，提供第三金属层的左和右部分（15,16），绝缘层的左部分和右部分（19,20）以及第一和第二 具有由它们之间的切口间隔开的相对边缘（23,24）的金属层。 在第一金属层的相对边缘处形成氧化的尖端（25）。 使用第三金属层的右部分的切口边缘作为荫罩，将第四金属层（26）弹性地沉积在第三金属层的氧化的末端和左侧部分上，然后氧化第四金属层 。 第五水平金属层（30）通过垂直的柱状光束沿着衬底穿过第四金属层上的氧化层和第二金属层的相对边缘（24）之间的凹口的底部（28）而弹道沉积。 MOMOM结构由第一金属层（3）提供 - 氧化末端（25） - 第四金属层（26）处于大致垂直的部分（39），第四金属层上的氧化层（29） 大致垂直部分（41） - 第五金属层（30）和第二金属层（6）。
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6.发明授权Lateral bidirectional power FET with notched multi-channel stacking and with dual gate reference terminal means 失效具有切口多通道堆叠和双栅极参考端子装置的横向双向功率FET
公开(公告)号：US4622569A
公开(公告)日：1986-11-11
申请号：US618537
申请日：1984-06-08
IPC分类号： H01L29/08 , H01L29/10 , H01L29/423 , H01L29/78
CPC分类号： H01L29/7831 , H01L29/0847 , H01L29/1045 , H01L29/7825
摘要： A lateral bidirectional power FET (2) has a common drift region (6) between first and second stacks (8, 10) of alternating conductivity type layers (12-17 and 18-23). A notch (38) extends vertically downwardly into the drift region and laterally separates the stacks above the drift region. The stacks include a plurality of channel-containing regions (12-14 and 18-20) interleaved with a plurality of source regions (15-17 and 21-23). In the ON state, bidirectional current flows serially through the source regions and channels of each stack and through the drift region. In the OFF state, voltage is dropped across the plurality of junctions in series in the stacks, and the respective junctions with the drift region.
摘要翻译： 横向双向功率FET（2）在交替导电类型层（12-17和18-23）的第一和第二堆叠（8,10）之间具有公共漂移区域（6）。 凹口（38）垂直向下延伸到漂移区域中并横向分离漂移区域上方的叠层。 堆叠包括与多个源区域（15-17和21-23）交错的多个通道容纳区域（12-14和18-20）。 在ON状态下，双向电流串联流过每个堆叠的源极区域和沟道以及穿过漂移区域。 在OFF状态下，堆叠中的多个结点之间的电压下降，并且与漂移区域相关联的各个接合点。
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公开(公告)号：US4577052A
公开(公告)日：1986-03-18
申请号：US421944
申请日：1982-09-23
CPC分类号： H01L31/04 , H02S99/00 , Y02E10/50 , Y10S136/291 , Y10S136/293 , Y10S323/906
摘要： An AC solar cell is provided by a pair of PN junction type solar cells connected in antiparallel between a pair of main terminals, and means for directing light alternatingly on the PN junctions to generate an alternating potential across the main terminals. AC electrical energy is generated without a DC to AC converter.
摘要翻译： 由一对PN结型太阳能电池提供AC反向太阳能电池，反向并联连接在一对主端子之间，以及用于在PN结上交替引导光以在主端子之间产生交流电位的装置。 在没有DC到AC转换器的情况下产生交流电能。
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公开(公告)号：US4571512A
公开(公告)日：1986-02-18
申请号：US390479
申请日：1982-06-21
IPC分类号： H01L29/78
CPC分类号： H01L29/7831 , H01L29/7809
摘要： Lateral FET structure is disclosed for bidirectional power switching, including AC application. Voltage blocking capability is substantially increased by a shielding electrode insulated between first and second gate electrodes in a notch between laterally spaced source regions and channel regions joined by a common drift region around the bottom of the notch. The shielding electrode prevents the electric field gradient toward the gate electrode on one side of the notch from inducing depletion in the drift region along the opposite side of the notch. This prevents unwanted inducement of conduction channels in the drift region during the OFF state of the FET. High density, high voltage, plural FET structure is disclosed.
摘要翻译： 公开了用于双向功率切换的横向FET结构，包括AC应用。 通过在横向间隔开的源极区域之间的凹口中的第一和第二栅电极之间绝缘的屏蔽电极和通过围绕凹口底部的公共漂移区域连接的沟道区域之间的屏蔽电极显着增加了电压阻断能力。 屏蔽电极防止在凹口一侧的栅电极的电场梯度导致沿着凹口的相对侧的漂移区域的耗尽。 这防止了在FET的OFF状态期间在漂移区域中导电通道的不期望的诱导。 公开了高密度，高电压，多FET结构。
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公开(公告)号：US4533783A
公开(公告)日：1985-08-06
申请号：US618440
申请日：1984-06-08
IPC分类号： H01L31/06 , H01L31/068
CPC分类号： H01L31/068 , H01L31/06 , Y02E10/547 , Y10S136/293
摘要： A solar cell (2) is provided for generating alternating current to drive an external load (18) in response to light radiation. A central region (4) of given conductivity type is disposed between said first and second regions (6) and (8) of intrinsic or invertable semiconductor material applied with AC gate drive (12). The light-generated hole-electron pairs alternately diffuse in opposite directions across the alternately induced pn junctions between the central region (4) and the first and second converted conductivity type intrinsic or invertable regions (6) and (8) to set up alternating potential gradients in opposite directions.
摘要翻译： 提供太阳能电池（2），用于产生交流电流以响应于光辐射来驱动外部负载（18）。 具有给定导电类型的中心区域（4）设置在施加有AC栅极驱动器（12）的本征或可逆半导体材料的第一和第二区域（6）和（8）之间。 光产生的空穴 - 电子对在中心区域（4）和第一和第二转换导电类型固有或可逆区域（6）和（8）之间的交替诱导的pn结交替地相反地扩散，以建立交替电位 梯度相反。
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公开(公告)号：US4675980A
公开(公告)日：1987-06-30
申请号：US863312
申请日：1986-05-15
IPC分类号： H01L49/02 , H01L21/33 , H01L29/70 , H01L31/10 , H01L45/00 , H01L21/467 , H01L21/475 , H01L27/14
CPC分类号： H01L45/00 , Y10S438/957 , Y10T29/413
摘要： MOMOM structural geometry and fabrication techniques are is disclosed. First and second metal layer strips (6 and 10) are supported on an insulating substrate (4) and have vertically overlapped portions sandwiched between insulating layers (8, 12). A generally vertical side (18) is defined through the layers to the substrate to expose vertical edges (20, 24) of the metal layers which are oxidized (32, 34) and covered by a third metal layer (44) extending therebetween. In the preferred embodiment, the middle insulating layer (8) is undercut (28), oxidized (36, 40), and filled with metallization (50), to provide a vertical rectilinear conduction path.
摘要翻译： 公开了MOMOM结构几何形状和制造技术。 第一和第二金属层条（6和10）被支撑在绝缘基板（4）上并且具有夹在绝缘层（8,12）之间的垂直重叠部分。 大体上垂直的侧面（18）被限定穿过衬底到衬底，以暴露金属层的垂直边缘（20,24），这些金属层被氧化（32,34）并被在其间延伸的第三金属层（44）覆盖。 在优选实施例中，中间绝缘层（8）是底切（28），被氧化（36,40）并填充有金属化（50），以提供垂直的直线导电路径。
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