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公开(公告)号：US5847407A
公开(公告)日：1998-12-08
申请号：US794559
申请日：1997-02-03
CPC分类号： H01J1/3042 , H01J31/127 , H01J2201/319
摘要： A charge dissipation field emission device (200, 300, 400) includes a supporting substrate (210, 310, 410), a cathode (215, 315, 415) formed thereon, a dielectric layer (240, 340, 440) formed on the cathode (215, 315, 415) and having emitter wells (260, 360, 460) and a charge dissipation well (252, 352, 452, 453) exposing a charge-collecting surface (248, 348, 448, 449), for bleeding off gaseous positive charge generated during the operation of the charge dissipation field emission device (200, 300, 400), an electron emitter (270, 370, 470) formed in each of the emitter wells (260, 360, 460), and an anode (280, 380, 480) spaced from the dielectric layer (240, 340, 440) for collecting electrons emitted by the electron emitters (270, 370, 470).
摘要翻译： 电荷耗散场发射装置（200,300,400）包括支撑衬底（210,310,410），形成在其上的阴极（215,315,415），形成在其上的电介质层（240,340,440） 阴极（215,315,445）并具有暴露电荷收集表面（248,348,448,449）的发射极阱（260,360,460）和电荷耗散阱（252,352,452,453），用于 在电荷耗散场致发射器件（200,300,400）的操作期间产生的气态正电荷渗出，形成在每个发射极阱（260,360,460）中的电子发射器（270,370,470），以及 与所述电介质层（240,340,440）间隔开用于收集由所述电子发射器（270,370,470）发射的电子的阳极（280,380,480）。
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公开(公告)号：US5929560A
公开(公告)日：1999-07-27
申请号：US36303
申请日：1998-03-06
申请人： Johann Trujillo , Chenggang Xie , Sung P. Pack , Rodolfo Lucero , Carl R. Hagen , Lawrence N. Dworsky
发明人： Johann Trujillo , Chenggang Xie , Sung P. Pack , Rodolfo Lucero , Carl R. Hagen , Lawrence N. Dworsky
CPC分类号： H01J3/022 , H01J2201/025
摘要： A field emission display (100) includes a dielectric layer (132) having a plurality of emitter wells (134), a plurality of electron emitters (136) disposed one each within the plurality of emitter wells (134), a plurality of conductive rows (138, 140, 142) disposed on the dielectric layer (132) and having sacrificial portions (154), an ion shield (139) disposed on the dielectric layer (132) and spaced apart from the sacrificial portions (154) of the plurality of conductive rows (138, 140, 142), and an anode (121) opposing the plurality of electron emitters (136) and defining a projected area (122) at the plurality of conductive rows (138, 140, 142). The sacrificial portions (154) of the plurality of conductive rows (138, 140, 142) extend beyond the projected area (122) of the anode (121).
摘要翻译： 场发射显示器（100）包括具有多个发射极阱（134）的电介质层（132），多个发射极阱（134）中的每一个都设置的多个电子发射器（136），多个导电行 （138,140,142），设置在电介质层（132）上并具有牺牲部分（154），设置在电介质层（132）上并离开多个牺牲部分（154）的离子屏蔽（139） 的导电行（138,140,142）以及与所述多个电子发射器（136）相对并且在所述多个导电行（138,140,142）处限定投影区域（122）的阳极（121）。 多个导电行（138,140,142）的牺牲部分（154）延伸超过阳极（121）的投影区域（122）。
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公开(公告)号：US6025819A
公开(公告)日：2000-02-15
申请号：US943174
申请日：1997-10-03
申请人： Chenggang Xie , Robert T. Smith , Rodolfo Lucero
发明人： Chenggang Xie , Robert T. Smith , Rodolfo Lucero
CPC分类号： G09G3/22 , G09G3/2014
摘要： A method for providing a gray scale in a field emission display (50) includes the step of providing a first driving pulse (214) having a pulse width equal to a pulse width separation (115) between the graphs (100, 200) of total charge response versus pulse width of a driving pulse for the non-ideal field emission display and the corresponding ideal field emission display. The pulse width separation (115) is the horizontal distance between the two graphs (100, 200) at a region wherein the two graphs (100, 200) are generally parallel. The pulse width, t.sub.n, of an nth driving pulse corresponding to an nth gray scale level is given by t.sub.n =t.sub.1 +[n-1]*[(t.sub.N -t.sub.1)/(N-1)], wherein t.sub.1 is the pulse width of the first driving pulse (214), N is the total number of gray scale levels, and t.sub.N is the pulse width of the Nth driving pulse.
摘要翻译： 一种用于在场发射显示器（50）中提供灰度级的方法包括提供第一驱动脉冲（214）的步骤，该第一驱动脉冲（214）具有等于总共的图形（100,200）之间的脉冲宽度间隔（115）的脉冲宽度 用于非理想场发射显示的驱动脉冲的电荷响应与脉冲宽度以及相应的理想场发射显示。 脉冲宽度分离（115）是两个图形（100,200）大致平行的区域之间的两个图形（100,200）之间的水平距离。 对应于第n个灰度级的第n个驱动脉冲的脉冲宽度tn由tn = t1 + [n-1] * [（tN-t1）/（N-1）]给出，其中t1是脉冲宽度 的第一驱动脉冲（214），N是灰度级的总数，t N是第N驱动脉冲的脉冲宽度。
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公开(公告)号：US5514891A
公开(公告)日：1996-05-07
申请号：US459855
申请日：1995-06-02
IPC分类号： H01L29/812 , H01L21/285 , H01L21/335 , H01L21/338 , H01L29/778 , H01L29/80 , H01L29/76 , H01L29/94 , H01L31/062 , H01L31/113
CPC分类号： H01L29/66462 , H01L21/28587 , H01L29/802
摘要： An N-type HIGFET (10) utilizes two etch layers (17,18) to form a gate insulator (16) to be shorter that the gate electrode (21). This T-shaped gate structure facilitates forming source (23) and drain (24) regions that are separated from the gate insulator (16) by a distance (22) in order to reduce leakage current and increase the breakdown voltage.
摘要翻译： N型HIGFET（10）利用两个蚀刻层（17,18）形成栅极电极（21）的栅极绝缘体（16）更短。 这种T形栅极结构有助于形成与栅极绝缘体（16）分离距离（22）的源极（23）和漏极（24）区域，以便减少漏电流并增加击穿电压。
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5.发明授权Localized enhancement of multilayer substrate thickness for high Q RF components 失效用于高Q RF组件的多层衬底厚度的局部增强公开(公告)号：US07221244B2
公开(公告)日：2007-05-22
申请号：US11237056
申请日：2005-09-28
申请人： John C. Estes , Rodolfo Lucero , Anthony M. Pavio
发明人： John C. Estes , Rodolfo Lucero , Anthony M. Pavio
IPC分类号： H03H11/00
CPC分类号： H03H9/0557 , H01P1/203 , H03H9/02913 , H05K1/0218 , H05K1/0237 , H05K1/0243 , H05K1/16 , H05K1/181 , H05K1/185 , H05K2201/09618 , H05K2201/09972 , H05K2201/10371 , Y10T29/4913 , Y10T29/49137 , Y10T29/49146 , Y10T29/49165 , Y10T29/53174 , Y10T29/53178
摘要： An exemplary system and method for providing differential adjustment of the height of a multilayer substrate in localized areas for improved Q-factor performance of RF devices is disclosed as comprising inter alia: a multilayer substrate (200); an RF component (210) embedded in the substrate (200); a surface mounted component (220); and an RF shield (260) disposed next to the surface mounted component (220), wherein the height of the shield (260) does not extend substantially beyond the height of the surface mounted component (220). Disclosed features and specifications may be variously controlled, configured, adapted or otherwise optionally modified to further improve or otherwise optimize Q, RF performance and/or material characteristics. Exemplary embodiments of the present invention representatively provide for high-performance, high-quality RF devices that may be readily incorporated with existing technologies for the improvement of frequency response, device package form factors, weights and/or other manufacturing, device or material performance metrics.
摘要翻译： 公开了一种用于在局部区域中对多层基板的高度进行差分调整以提高RF器件的Q因子性能的示例性系统和方法，其特别包括：多层衬底（200）; 嵌入在所述基板（200）中的RF部件（210）; 表面安装部件（220）; 以及靠近所述表面安装部件（220）设置的RF屏蔽件（260），其中所述屏蔽件（260）的高度基本上不超过所述表面安装部件（220）的高度。 公开的特征和规范可以被不同地控制，配置，适配或以其他方式任意地修改，以进一步改善或者优化Q，RF性能和/或材料特性。 本发明的示例性实施例代表性地提供了可以容易地与用于改进频率响应，设备包装形状因子，重量和/或其他制造，设备或材料性能度量的现有技术结合的高性能，高质量的RF设备 。
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公开(公告)号：US06873221B2
公开(公告)日：2005-03-29
申请号：US10428175
申请日：2003-04-30
申请人： Rodolfo Lucero , Anthony M. Pavio
发明人： Rodolfo Lucero , Anthony M. Pavio
IPC分类号： H01P5/10
CPC分类号： H01P5/10
摘要： An exemplary system and method for minimizing degradation effects attributed to misalignment in the production of multilayer balun devices is disclosed as comprising inter alia any combination of coupled line folding that effectively provides a degenerate or otherwise reducible representation of line segment components wherein at least about half of the line segments (by, for example, linear distance or by line volume) are substantially orthogonal to the remaining half.
摘要翻译： 公开了用于最小化归因于多层巴伦装置的生产中的未对准的劣化效应的示例性系统和方法，其特别包括耦合线折叠的任何组合，其有效地提供线段成分的简并或可缩减表示，其中至少约一半 线段（例如，通过线性距离或线路体积）基本上与剩下的一半正交。
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7.发明授权
公开(公告)号：US06084339A
公开(公告)日：2000-07-04
申请号：US53436
申请日：1998-04-01
申请人： Chenggang Xie , Rodolfo Lucero , Johann Trujillo
发明人： Chenggang Xie , Rodolfo Lucero , Johann Trujillo
CPC分类号： H01J29/467 , H01J3/022
摘要： A field emission device (100) includes an electroplated structure (122) and an electron emitter (118). Electroplated structure (122) includes a base (124), which is disposed proximate to electron emitter (118) and is made from the same material from which electron emitter (118) is made. Electroplated structure (122) further includes an electroplating electrode (126), which is disposed on base (124), and an electroplated layer (128), which is disposed on electroplating electrode (126). A method for fabricating field emission device (100) includes a step of forming electron emitter (118) and further includes a step of forming base (124) during the step of forming electron emitter (118). The method further includes a step of completely encapsulating electron emitter (118) prior to a step of forming electroplated layer (128).
摘要翻译： 场致发射器件（100）包括电镀结构（122）和电子发射器（118）。 电镀结构（122）包括靠近电子发射器（118）设置并由制造电子发射器（118）的相同材料制成的基座（124）。 电镀结构（122）还包括设置在基底（124）上的电镀电极（126）和设置在电镀电极（126）上的电镀层（128）。 一种用于制造场发射器件（100）的方法包括形成电子发射器（118）的步骤，并且还包括在形成电子发射器（118）的步骤期间形成基极（124）的步骤。 该方法还包括在形成电镀层（128）的步骤之前完全封装电子发射器（118）的步骤。
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8.发明申请Localized enhancement of multilayer substrate thickness for high Q RF components 失效用于高Q RF组件的多层衬底厚度的局部增强公开(公告)号：US20060027385A1
公开(公告)日：2006-02-09
申请号：US11237056
申请日：2005-09-28
申请人： John Estes , Rodolfo Lucero , Anthony Pavio
发明人： John Estes , Rodolfo Lucero , Anthony Pavio
CPC分类号： H03H9/0557 , H01P1/203 , H03H9/02913 , H05K1/0218 , H05K1/0237 , H05K1/0243 , H05K1/16 , H05K1/181 , H05K1/185 , H05K2201/09618 , H05K2201/09972 , H05K2201/10371 , Y10T29/4913 , Y10T29/49137 , Y10T29/49146 , Y10T29/49165 , Y10T29/53174 , Y10T29/53178
摘要： An exemplary system and method for providing differential adjustment of the height of a multilayer substrate in localized areas for improved Q-factor performance of RF devices is disclosed as comprising inter alia: a multilayer substrate (200); an RF component (210) embedded in the substrate (200); a surface mounted component (220); and an RF shield (260) disposed next to the surface mounted component (220), wherein the height of the shield (260) does not extend substantially beyond the height of the surface mounted component (220). Disclosed features and specifications may be variously controlled, configured, adapted or otherwise optionally modified to further improve or otherwise optimize Q, RF performance and/or material characteristics. Exemplary embodiments of the present invention representatively provide for high-performance, high-quality RF devices that may be readily incorporated with existing technologies for the improvement of frequency response, device package form factors, weights and/or other manufacturing, device or material performance metrics.
摘要翻译： 公开了一种用于在局部区域中对多层基板的高度进行差分调整以提高RF器件的Q因子性能的示例性系统和方法，其特别包括：多层衬底（200）; 嵌入在所述基板（200）中的RF部件（210）; 表面安装部件（220）; 以及靠近所述表面安装部件（220）设置的RF屏蔽件（260），其中所述屏蔽件（260）的高度基本上不超过所述表面安装部件（220）的高度。 公开的特征和规范可以被不同地控制，配置，适配或以其他方式任意地修改，以进一步改善或者优化Q，RF性能和/或材料特性。 本发明的示例性实施例代表性地提供了可以容易地与用于改进频率响应，设备包装形状因子，重量和/或其他制造，设备或材料性能度量的现有技术结合的高性能，高质量的RF设备 。
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9.发明授权Localized enhancement of multilayer substrate thickness for high Q RF components 失效用于高Q RF组件的多层衬底厚度的局部增强公开(公告)号：US06971162B2
公开(公告)日：2005-12-06
申请号：US10437721
申请日：2003-05-13
申请人： John C. Estes , Rodolfo Lucero , Anthony M. Pavio
发明人： John C. Estes , Rodolfo Lucero , Anthony M. Pavio
CPC分类号： H03H9/0557 , H01P1/203 , H03H9/02913 , H05K1/0218 , H05K1/0237 , H05K1/0243 , H05K1/16 , H05K1/181 , H05K1/185 , H05K2201/09618 , H05K2201/09972 , H05K2201/10371 , Y10T29/4913 , Y10T29/49137 , Y10T29/49146 , Y10T29/49165 , Y10T29/53174 , Y10T29/53178
摘要： An exemplary system and method for providing differential adjustment of the height of a multilayer substrate in localized areas for improved Q-factor performance of RF devices is disclosed as comprising inter alia: a multilayer substrate (200); an RF component (210) embedded in the substrate (200); a surface mounted component (220); and an RF shield (260) disposed next to the surface mounted component (220), wherein the height of the shield (260) does not extend substantially beyond the height of the surface mounted component (220). Disclosed features and specifications may be variously controlled, configured, adapted or otherwise optionally modified to further improve or otherwise optimize Q, RF performance and/or material characteristics. Exemplary embodiments of the present invention representatively provide for high-performance, high-quality RF devices that may be readily incorporated with existing technologies for the improvement of frequency response, device package form factors, weights and/or other manufacturing, device or material performance metrics.
摘要翻译： 公开了一种用于在局部区域中对多层基板的高度进行差分调整以提高RF器件的Q因子性能的示例性系统和方法，其特别包括：多层衬底（200）; 嵌入在所述基板（200）中的RF部件（210）; 表面安装部件（220）; 以及靠近所述表面安装部件（220）设置的RF屏蔽件（260），其中所述屏蔽件（260）的高度基本上不超过所述表面安装部件（220）的高度。 公开的特征和规范可以被不同地控制，配置，适配或以其他方式任意地修改，以进一步改善或者优化Q，RF性能和/或材料特性。 本发明的示例性实施例代表性地提供了可以容易地与用于改进频率响应，设备包装形状因子，重量和/或其他制造，设备或材料性能度量的现有技术结合的高性能，高质量的RF设备 。
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公开(公告)号：US5895929A
公开(公告)日：1999-04-20
申请号：US110976
申请日：1998-07-07
IPC分类号： H01L29/80 , H01L31/0328 , H01L31/0336 , H01L31/072 , H01L31/109
CPC分类号： H01L29/802
摘要： A low subthreshold leakage current, p-channel HFET including a GaAs supporting substrate with a first GaAs buffer layer and a first Al.sub.0.75 Ga.sub.0.25 As diffusion barrier layer formed thereon and a low temperature grown layer, including one of GaAs and AlGaAs, grown at 200.degree. C. on the first diffusion barrier layer. A second Al.sub.0.75 Ga.sub.0.25 As diffusion barrier layer is positioned on the low temperature grown layer and a second GaAs buffer layer is grown on the second diffusion barrier layer. A p-channel HFET is formed on the second buffer layer.
摘要翻译： 低亚阈值漏电流，p沟道HFET，包括具有第一GaAs缓冲层的GaAs支撑衬底和形成在其上的第一Al 0.75 Ga 0.25 As扩散阻挡层，以及包括GaAs和AlGaAs中的一种的低温生长层，其生长在 在第一扩散阻挡层上为200℃。 第二Al 0.75 Ga 0.25 As扩散阻挡层位于低温生长层上，第二GaAs缓冲层生长在第二扩散阻挡层上。 在第二缓冲层上形成p沟道HFET。
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