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    PATTERN FORMATION METHODS
    1.
    发明申请
    PATTERN FORMATION METHODS 审中-公开
    模式形成方法

    公开(公告)号：US20160124309A1

    公开(公告)日：2016-05-05

    申请号：US14927354

    申请日：2015-10-29

    Applicant: Rohm and Haas Electronic Materials LLC

    Inventor： Choong-Bong LEE ,  Stefan J. CAPORALE ,  Jason A. DeSISTO ,  Jong Keun PARK ,  Cong LIU ,  Cheng-Bai XU ,  Cecily ANDES

    IPC: G03F7/20 ,  G03F7/38 ,  G03F7/32 ,  G03F7/16

    CPC classification number: G03F7/11 ,  C08F220/18 ,  C08F220/28 ,  C08F2220/281 ,  C08F2220/283 ,  C09D133/08 ,  C09D133/14 ,  G03F7/0046 ,  G03F7/038 ,  G03F7/039 ,  G03F7/0397 ,  G03F7/0752 ,  G03F7/162 ,  G03F7/168 ,  G03F7/2041 ,  G03F7/325 ,  G03F7/327 ,  G03F7/38

    Abstract: Methods of forming an electronic device, comprise: (a) providing a semiconductor substrate comprising one or more layers to be patterned; (b) forming a photoresist layer over the one or more layers to be patterned, wherein the photoresist layer is formed from a composition that comprises: a matrix polymer comprising a unit having an acid labile group; a photoacid generator; and an organic solvent; (c) coating a photoresist overcoat composition over the photoresist layer, wherein the overcoat composition comprises: a matrix polymer; an additive polymer; a basic quencher; and an organic solvent; wherein the additive polymer has a lower surface energy than a surface energy of the matrix polymer, and wherein the additive polymer is present in the overcoat composition in an amount of from 1 to 20 wt % based on total solids of the overcoat composition; (d) exposing the photoresist layer to activating radiation; (e) heating the substrate in a post-exposure bake process; and (f) developing the exposed film with an organic solvent developer. The methods have particular applicability in the semiconductor manufacturing industry.

    Abstract translation: 形成电子器件的方法包括：（a）提供包括一个或多个待图案化层的半导体衬底; （b）在待图案化的一个或多个层上形成光致抗蚀剂层，其中光致抗蚀剂层由组合物形成，所述组合物包括：包含具有酸不稳定基团的单元的基质聚合物; 光致酸发生器; 和有机溶剂; （c）在光致抗蚀剂层上涂覆光致抗蚀剂外涂层组合物，其中外涂层组合物包含：基体聚合物; 添加剂聚合物; 一个基本的猝灭剂; 和有机溶剂; 其中所述添加剂聚合物具有比所述基体聚合物的表面能更低的表面能，并且其中所述添加剂聚合物以所述外涂层组合物的总固体为基准存在于所述外涂层组合物中的量为1至20重量％; （d）将光致抗蚀剂层暴露于活化辐射; （e）在曝光后烘烤过程中加热基材; 和（f）用有机溶剂显影剂显影曝光的膜。 该方法在半导体制造业中具有特殊的适用性。

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