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    Light emitting chip package module and light emitting chip package structure and manufacturing method thereof
    1.
    发明授权
    Light emitting chip package module and light emitting chip package structure and manufacturing method thereof 有权
    发光芯片封装模块及其发光芯片封装结构及其制造方法

    公开(公告)号：US08698166B2

    公开(公告)日：2014-04-15

    申请号：US12837513

    申请日：2010-07-16

    申请人： Hsueh-Chih Chang ,  Rong Xuan ,  Chao-Wei Li ,  Chih-Hao Hsu

    发明人： Hsueh-Chih Chang ,  Rong Xuan ,  Chao-Wei Li ,  Chih-Hao Hsu

    IPC分类号： H01L33/00

    CPC分类号： H01L33/48 ,  H01L25/0753 ,  H01L2224/48091 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

    摘要： A light emitting chip package module includes a substrate, a light emitting chip package structure, and a magnetic device. The substrate has a surface. The light emitting chip package structure is disposed on the surface of the substrate. The light emitting chip package structure includes a carrier, a light emitting chip, and a sealant. The light emitting chip is disposed on and electrically connected to the carrier. The sealant is disposed on the carrier and covers the light emitting chip. The magnetic device is disposed next to the light emitting chip package structure to apply a magnetic field to the light emitting chip.

    摘要翻译： 发光芯片封装模块包括衬底，发光芯片封装结构和磁性器件。 基板具有表面。 发光芯片封装结构设置在基板的表面上。 发光芯片封装结构包括载体，发光芯片和密封剂。 发光芯片设置在载体上并与其电连接。 密封剂设置在载体上并覆盖发光芯片。 磁性装置设置在发光芯片封装结构的旁边，以向发光芯片施加磁场。

    Light-emitting device with magnetic field
    3.
    发明授权
    Light-emitting device with magnetic field 有权
    具有磁场的发光装置

    公开(公告)号：US07767996B2

    公开(公告)日：2010-08-03

    申请号：US12146418

    申请日：2008-06-25

    申请人： Rong Xuan ,  Chih-Hao Hsu

    发明人： Rong Xuan ,  Chih-Hao Hsu

    IPC分类号： H01L31/00

    CPC分类号： H01L33/38 ,  H01L24/32 ,  H01L33/14 ,  H01L33/20 ,  H01L33/22 ,  H01L2224/13 ,  H01L2224/48091 ,  H01L2224/73265 ,  H01L2924/12041 ,  H01L2924/12044 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2924/00

    摘要： A light-emitting device with magnetic-source includes a light emitting stack structure. The light emitting stack structure has a first electrode and a second electrode distributed at a light output side of the light emitting stack structure. A magnetic-source layer is engaged with the light emitting stack structure to provide a magnetic field to the light emitting stack structure in a substantially perpendicular direction to the light emitting stack structure. Alternatively, a method for improving light emitting performance of a light-emitting device includes applying a magnetic field to the light-emitting device at a direction substantially perpendicular to a light emitting area of the light-emitting device.

    摘要翻译： 具有磁源的发光器件包括发光堆叠结构。 发光堆叠结构具有分布在发光堆叠结构的光输出侧的第一电极和第二电极。 磁源层与发光堆叠结构接合，以在与发光堆叠结构基本垂直的方向上向发光堆叠结构提供磁场。 或者，用于提高发光器件的发光性能的方法包括在基本上垂直于发光器件的发光区域的方向上向发光器件施加磁场。

    Nitride semiconductor light emitting device with magnetic film
    8.
    发明授权
    Nitride semiconductor light emitting device with magnetic film 有权
    氮化物半导体发光器件带磁性膜

    公开(公告)号：US08536614B2

    公开(公告)日：2013-09-17

    申请号：US13339388

    申请日：2011-12-29

    申请人： Chih-Hao Hsu ,  Rong Xuan ,  Yu-Hsiang Chang ,  Jung-Chun Huang ,  Chun-Ying Chen

    发明人： Chih-Hao Hsu ,  Rong Xuan ,  Yu-Hsiang Chang ,  Jung-Chun Huang ,  Chun-Ying Chen

    IPC分类号： H01L33/00

    CPC分类号： H01L33/38 ,  H01L33/14 ,  H01L33/22 ,  H01L33/40

    摘要： A nitride semiconductor light emitting device including an n-type nitride semiconductor layer, a p-type nitride semiconductor layer, a light emitting semiconductor layer, a first metal pad, a second metal pad, and a first magnetic material layer is provided. The light emitting semiconductor layer is disposed between the n-type nitride semiconductor layer and the p-type nitride semiconductor layer. The first metal pad is electrically connected to the n-type nitride semiconductor layer. The second metal pad is electrically connected to the p-type nitride semiconductor layer. The first magnetic material layer is disposed between the first metal pad and the n-type nitride semiconductor layer. A distribution area of the first magnetic material layer parallel to a (0001) plane of the n-type nitride semiconductor layer is greater than or equal to an area of the first metal pad parallel to the (0001) plane.

    摘要翻译： 提供了包括n型氮化物半导体层，p型氮化物半导体层，发光半导体层，第一金属焊盘，第二金属焊盘和第一磁性材料层的氮化物半导体发光器件。 发光半导体层设置在n型氮化物半导体层和p型氮化物半导体层之间。 第一金属焊盘电连接到n型氮化物半导体层。 第二金属焊盘电连接到p型氮化物半导体层。 第一磁性材料层设置在第一金属焊盘和n型氮化物半导体层之间。 与n型氮化物半导体层的（0001）面平行的第一磁性体层的分布面积大于或等于平行于（0001）面的第一金属焊盘的面积。