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公开(公告)号：US06997403B2
公开(公告)日：2006-02-14
申请号：US10340976
申请日：2003-01-13
CPC分类号： H01L21/6708 , C23C16/4481
摘要： The present invention is generally directed to a vaporizer with positive liquid shut-off. In one illustrative embodiment, the vaporizer is comprised of a body, a liquid inlet and a carrier gas inlet coupled to the body, a nozzle positioned within the body, the nozzle having at least one opening formed therethrough that defines a vaporized liquid exit, and a positive shut-off valve, a portion of which is adapted to engage the vaporized liquid exit of the nozzle. In another illustrative embodiment, the vaporizer is comprised of a body, a liquid inlet and a carrier gas inlet coupled to the body and a plurality of peltier cells coupled to the body.
摘要翻译： 本发明一般涉及具有正液体截止的汽化器。 在一个说明性实施例中，蒸发器包括主体，液体入口和连接到主体的载气入口，位于主体内的喷嘴，喷嘴具有限定蒸发的液体出口的至少一个通过其形成的开口，以及 正截止阀，其一部分适于接合喷嘴的汽化液体出口。 在另一个说明性实施例中，蒸发器包括主体，液体入口和连接到主体的载气入口以及耦合到主体的多个珀耳帖细胞。
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公开(公告)号：US07431225B2
公开(公告)日：2008-10-07
申请号：US11198560
申请日：2004-08-10
CPC分类号： H01L21/6708 , C23C16/4481
摘要： The present invention is generally directed to a vaporizer with positive liquid shut-off. In one illustrative embodiment, the vaporizer is comprised of a body, a liquid inlet and a carrier gas inlet coupled to the body, a nozzle positioned within the body, the nozzle having at least one opening formed therethrough that defines a vaporized liquid exit, and a positive shut-off valve, a portion of which is adapted to engage the vaporized liquid exit of the nozzle. In another illustrative embodiment, the vaporizer is comprised of a body, a liquid inlet and a carrier gas inlet coupled to-the body and a plurality of peltier cells coupled to the body.
摘要翻译： 本发明一般涉及具有正液体截止的汽化器。 在一个说明性实施例中，蒸发器包括主体，液体入口和连接到主体的载气入口，位于主体内的喷嘴，喷嘴具有限定蒸发的液体出口的至少一个通过其形成的开口，以及 正截止阀，其一部分适于接合喷嘴的汽化液体出口。 在另一个说明性实施例中，蒸发器包括主体，液体入口和连接到主体的载气入口以及耦合到主体的多个珀耳帖细胞。
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公开(公告)号：US07114669B2
公开(公告)日：2006-10-03
申请号：US10917640
申请日：2004-08-13
CPC分类号： H01L21/6708 , C23C16/4481
摘要： The present invention is generally directed to a vaporizer with positive liquid shut-off. In one illustrative embodiment, the vaporizer is comprised of a body, a liquid inlet and a carrier gas inlet coupled to the body, a nozzle positioned within the body, the nozzle having at least one opening formed therethrough that defines a vaporized liquid exit, and a positive shut-off valve, a portion of which is adapted to engage the vaporized liquid exit of the nozzle. In another illustrative embodiment, the vaporizer is comprised of a body, a liquid inlet and a carrier gas inlet coupled to the body and a plurality of peltier cells coupled to the body.
摘要翻译： 本发明一般涉及具有正液体截止的汽化器。 在一个说明性实施例中，蒸发器包括主体，液体入口和连接到主体的载气入口，位于主体内的喷嘴，喷嘴具有限定蒸发的液体出口的至少一个通过其形成的开口，以及 正截止阀，其一部分适于接合喷嘴的汽化液体出口。 在另一个说明性实施例中，蒸发器包括主体，液体入口和连接到主体的载气入口以及耦合到主体的多个珀耳帖细胞。
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4.发明授权公开(公告)号：US06800172B2
公开(公告)日：2004-10-05
申请号：US10082599
申请日：2002-02-22
申请人： Craig M. Carpenter , Ross S. Dando , Allen P. Mardian , Kevin T. Hamer , Raynald B. Cantin , Philip H. Campbell , Kimberly R. Tschepen , Randy W. Mercil
发明人： Craig M. Carpenter , Ross S. Dando , Allen P. Mardian , Kevin T. Hamer , Raynald B. Cantin , Philip H. Campbell , Kimberly R. Tschepen , Randy W. Mercil
IPC分类号： C23F100
CPC分类号： H01L21/67126 , C23C16/4409 , C23C16/54 , Y10S414/139
摘要： A semiconductor substrate processor includes a substrate transfer chamber and a plurality of substrate processing chambers connected therewith. An interfacial structure is received between at least one of the processing chambers and the transfer chamber. The interfacial structure includes a substantially non-metallic, thermally insulative mass of material interposed between the one processing chamber and the transfer chamber. The mass is of sufficient volume to effectively reduce heat transfer from the processing chamber to the transfer chamber than would otherwise occur in the absence of said mass of material. An interfacial structure includes a body having a substrate passageway extending therethrough. The passageway includes walls at least a portion of which are substantially metallic. The body includes material peripheral of the walls which is substantially non-metallic and thermally insulative. The substantially non-metallic material has mounting openings extending at least partially therein.
摘要翻译： 半导体衬底处理器包括衬底传送室和与之连接的多个衬底处理室。 在至少一个处理室和传送室之间接收界面结构。 界面结构包括插入在一个处理室和传送室之间的基本上非金属的绝热材料块。 质量足够的体积以有效地减少从处理室到传送室的传热比否则不存在所述材料块的情况。 界面结构包括具有延伸穿过其中的基底通道的主体。 该通道包括其至少一部分基本上是金属的壁。 主体包括基本上非金属和热绝缘的壁的材料周边。 基本上非金属材料具有其中至少部分延伸的安装开口。
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5.发明授权公开(公告)号：US07192487B2
公开(公告)日：2007-03-20
申请号：US10695727
申请日：2003-10-28
申请人： Craig M. Carpenter , Ross S. Dando , Allen P. Mardian , Kevin T. Hamer , Raynald B. Cantin , Philip H. Campbell , Kimberly R. Tschepen , Randy W. Mercil
发明人： Craig M. Carpenter , Ross S. Dando , Allen P. Mardian , Kevin T. Hamer , Raynald B. Cantin , Philip H. Campbell , Kimberly R. Tschepen , Randy W. Mercil
IPC分类号： C23C16/00 , C23F1/00 , H01L21/301
CPC分类号： H01L21/67126 , C23C16/4409 , C23C16/54 , Y10S414/139
摘要： A semiconductor substrate processor includes a substrate transfer chamber and a plurality of substrate processing chambers connected therewith. An interfacial structure is received between at least one of the processing chambers and the transfer chamber. The interfacial structure includes a substantially non-metallic, thermally insulative mass of material interposed between the one processing chamber and the transfer chamber. The mass is of sufficient volume to effectively reduce heat transfer from the processing chamber to the transfer chamber than would otherwise occur in the absence of said mass of material. An interfacial structure includes a body having a substrate passageway extending therethrough. The passageway includes walls at least a portion of which are substantially metallic. The body includes material peripheral of the walls which is substantially non-metallic and thermally insulative. The substantially non-metallic material has mounting openings extending at least partially therein.
摘要翻译： 半导体衬底处理器包括衬底传送室和与之连接的多个衬底处理室。 在至少一个处理室和传送室之间接收界面结构。 界面结构包括插入在一个处理室和传送室之间的基本上非金属的绝热材料块。 质量足够的体积以有效地减少从处理室到传送室的传热比否则不存在所述材料块的情况。 界面结构包括具有延伸穿过其中的基底通道的主体。 该通道包括其至少一部分基本上是金属的壁。 主体包括基本上非金属和热绝缘的壁的材料周边。 基本上非金属材料具有其中至少部分延伸的安装开口。
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6.发明授权Method of replacing at least a portion of semiconductor substrate deposition process kit hardware, and method of depositing materials over a plurality of semiconductor substrates 失效替代半导体衬底沉积工艺组件硬件的至少一部分的方法以及在多个半导体衬底上沉积材料的方法公开(公告)号：US06787373B2
公开(公告)日：2004-09-07
申请号：US10396268
申请日：2003-03-24
IPC分类号： H01L2100
CPC分类号： C23C16/4401 , C23C16/54 , Y10S414/137
摘要： The invention includes an engagement mechanism for semiconductor substrate deposition process kit hardware, including a body having a distal portion and a proximal portion. The body is sized for movement through a passageway of a semiconductor substrate deposition chamber through which semiconductor substrates pass into and out of the chamber for deposition processing. At least engager is mounted to the distal portion of the body The engager is sized for movement through said passageway with the body. The engager is configured to releasably engage a component of process kit hardware received within said chamber. The invention includes methods of replacing at least a portion of semiconductor substrate deposition process kit hardware. The invention includes methods of depositing materials over a plurality of semiconductor substrates. Other implementations are contemplated.
摘要翻译： 本发明包括用于半导体衬底沉积工艺组件硬件的接合机构，包括具有远端部分和近端部分的本体。 本体的尺寸适于通过半导体衬底沉积室的通道移动，半导体衬底通过该通道进入和离开用于沉积处理的腔室。 至少该夹具安装到身体的远端部分。 接合器的尺寸适合于通过身体的所述通道移动。 接合器构造成可释放地接合在所述室内容纳的处理套件硬件的部件。 本发明包括替换半导体衬底沉积工艺组件硬件的至少一部分的方法。 本发明包括在多个半导体衬底上沉积材料的方法。 考虑其他实现。
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7.发明授权Valve assemblies for use with a reactive precursor in semiconductor processing 失效用于半导体加工中的反应性前体的阀组件公开(公告)号：US07000636B2
公开(公告)日：2006-02-21
申请号：US10691769
申请日：2003-10-22
IPC分类号： F16K11/085
CPC分类号： C30B25/14 , C23C16/452 , C23C16/45536 , C23C16/45542 , C23C16/45544 , C23C16/45561 , C30B25/105 , Y10S118/90 , Y10T137/86839 , Y10T137/86863
摘要： The invention includes chemical vapor deposition methods, including atomic layer deposition, and valve assemblies for use with a reactive precursor in semiconductor processing. In one implementation, a chemical vapor deposition method includes positioning a semiconductor substrate within a chemical vapor deposition chamber. A first deposition precursor is fed to a remote plasma generation chamber positioned upstream of the deposition chamber, and a plasma is generated therefrom within the remote chamber and effective to form a first active deposition precursor species. The first species is flowed to the deposition chamber. During the flowing, flow of at least some of the first species is diverted from entering the deposition chamber while feeding and maintaining plasma generation of the first deposition precursor within the remote chamber. At some point, diverting is ceased while feeding and maintaining plasma generation of the first deposition precursor within the remote chamber. Other aspects and implementations are contemplated.
摘要翻译： 本发明包括化学气相沉积方法，包括原子层沉积和用于半导体加工中的反应性前体的阀组件。 在一个实施方案中，化学气相沉积方法包括将半导体衬底定位在化学气相沉积室内。 第一沉积前体被供给到位于沉积室上游的远程等离子体产生室，并且在远程室内产生等离子体，并有效地形成第一活性沉积前体物质。 第一种物质流入沉积室。 在流动期间，至少一些第一物质的流动被转移进入沉积室，同时在远程室内馈送和保持第一沉积前体的等离子体产生。 在某些时候，在远程室内进给和维持第一沉积前体的等离子体产生的同时停止转移。 考虑了其他方面和实现。
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公开(公告)号：US06935372B2
公开(公告)日：2005-08-30
申请号：US11034015
申请日：2005-01-11
IPC分类号： C23C16/44 , C23C16/452 , C23C16/455 , C30B25/10 , C30B25/14 , F16K11/085
CPC分类号： C30B25/14 , C23C16/452 , C23C16/45536 , C23C16/45542 , C23C16/45544 , C23C16/45561 , C30B25/105 , Y10S118/90 , Y10T137/86839 , Y10T137/86863
摘要： The invention includes chemical vapor deposition methods, including atomic layer deposition, and valve assemblies for use with a reactive precursor in semiconductor processing. In one implementation, a chemical vapor deposition method includes positioning a semiconductor substrate within a chemical vapor deposition chamber. A first deposition precursor is fed to a remote plasma generation chamber positioned upstream of the deposition chamber, and a plasma is generated therefrom within the remote chamber and effective to form a first active deposition precursor species. The first species is flowed to the deposition chamber. During the flowing, flow of at least some of the first species is diverted from entering the deposition chamber while feeding and maintaining plasma generation of the first deposition precursor within the remote chamber. At some point, diverting is ceased while feeding and maintaining plasma generation of the first deposition precursor within the remote chamber. Other aspects and implementations are contemplated.
摘要翻译： 本发明包括化学气相沉积方法，包括原子层沉积，以及用于半导体加工中的反应性前体的阀组件。 在一个实施方案中，化学气相沉积方法包括将半导体衬底定位在化学气相沉积室内。 第一沉积前体被供给到位于沉积室上游的远程等离子体产生室，并且在远程室内产生等离子体，并有效地形成第一活性沉积前体物质。 第一种物质流入沉积室。 在流动期间，至少一些第一物质的流动被转移进入沉积室，同时在远程室内馈送和保持第一沉积前体的等离子体产生。 在某些时候，在远程室内进给和维持第一沉积前体的等离子体产生的同时停止转移。 考虑了其他方面和实现。
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公开(公告)号：US07234412B2
公开(公告)日：2007-06-26
申请号：US10350554
申请日：2003-01-23
IPC分类号： C23C16/00
CPC分类号： C23C16/54 , C23C16/4401
摘要： A method includes removing at least a piece of a deposition chamber liner from a deposition chamber by passing it through a passageway to the deposition chamber through which semiconductor substrates pass into and out of the chamber for deposition processing. A replacement for the removed deposition chamber liner piece is provided into the chamber by passing the replacement through said passageway. A liner apparatus includes a plurality of pieces which when assembled within a selected semiconductor substrate deposition processor chamber are configured to restrict at least a majority portion of all internal wall surfaces which define said semiconductor substrate deposition processor chamber from exposure to deposition material within the chamber. At least some of the pieces are sized for passing completely through a substrate passageway to the chamber through which semiconductor substrates pass into and out of the chamber for deposition processing.
摘要翻译： 一种方法包括通过将沉积室衬套通过通道传送到沉积室，通过半导体衬底通过其进入和离开室进行沉积处理，从沉积室去除至少一块沉积室衬里。 通过使替换通过所述通道，将移除的沉积室衬垫件的替代物提供到腔室中。 衬套装置包括多个片段，当组装在所选择的半导体衬底沉积处理器室中时，其被限定为限定所述半导体衬底沉积处理器室的所有内壁表面的至少大部分部分暴露于腔室内的沉积材料。 至少一些片的尺寸被设计成完全通过衬底通道到半导体衬底通过其进入和离开室以进行沉积处理的室。
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10.发明授权Engagement mechanism for semiconductor substrate deposition process kit hardware 失效半导体衬底沉积工艺套件硬件的配合机制公开(公告)号：US06620253B1
公开(公告)日：2003-09-16
申请号：US10163671
申请日：2002-06-05
IPC分类号： C23C1600
CPC分类号： C23C16/4401 , C23C16/54 , Y10S414/137
摘要： The invention includes an engagement mechanism for semiconductor substrate deposition process kit hardware, including a body having a distal portion and a proximal portion. The body is sized for movement through a passageway of a semiconductor substrate deposition chamber through which semiconductor substrates pass into and out of the chamber for deposition processing. At least engager is mounted to the distal portion of the body The engager is sized for movement through said passageway with the body. The engager is configured to releasably engage a component of process kit hardware received within said chamber. The invention includes methods of replacing at least a portion of semiconductor substrate deposition process kit hardware. The invention includes methods of depositing materials over a plurality of semiconductor substrates. Other implementations are contemplated.
摘要翻译： 本发明包括用于半导体衬底沉积工艺组件硬件的接合机构，包括具有远端部分和近端部分的本体。 本体的尺寸适于通过半导体衬底沉积室的通道移动，半导体衬底通过该通道进入和离开用于沉积处理的腔室。 至少吸入器被安装到身体的远端部分。接合器的尺寸适于通过身体与所述通道一起移动。 接合器构造成可释放地接合在所述室内容纳的处理套件硬件的部件。 本发明包括替换半导体衬底沉积工艺组件硬件的至少一部分的方法。 本发明包括在多个半导体衬底上沉积材料的方法。 考虑其他实现。
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