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    Photoelectric Conversion Device
    1.
    发明申请
    Photoelectric Conversion Device 审中-公开
    光电转换装置

    公开(公告)号：US20110308616A1

    公开(公告)日：2011-12-22

    申请号：US13203823

    申请日：2010-09-17

    申请人： Rui Kamada ,  Shuji Nakazawa ,  Nobuyuki Horiuchi ,  Shintaro Kubo ,  Yusuke Miyamichi

    发明人： Rui Kamada ,  Shuji Nakazawa ,  Nobuyuki Horiuchi ,  Shintaro Kubo ,  Yusuke Miyamichi

    IPC分类号： H01L31/0264

    CPC分类号： H01L31/0322 ,  H01L31/036 ,  H01L31/0749 ,  Y02E10/541

    摘要： It is aimed to provide a photoelectric conversion device having high adhesion between a light-absorbing layer and an electrode layer as well as high photoelectric conversion efficiency. In order to achieve this object, the photoelectric conversion device includes a first layer and a second layer provided on the first layer. Further, in the photoelectric conversion device, the first layer includes an electrode layer, the second layer includes a light-absorbing layer including a group I-III-VI compound semiconductor, the light-absorbing layer includes a first region and a second region located farther from the first layer than the first region, and an average grain diameter of crystal grains in the second region is larger than an average grain diameter of crystal grains in the first region.

    摘要翻译： 旨在提供一种在光吸收层和电极层之间具有高粘附性的光电转换装置以及高的光电转换效率。 为了实现该目的，光电转换装置包括设置在第一层上的第一层和第二层。 此外，在光电转换装置中，第一层包括电极层，第二层包括含有I-III-VI族化合物半导体的光吸收层，光吸收层包括第一区域和位于 比第一区域更远离第一层，并且第二区域中的晶粒的平均粒径大于第一区域中的晶粒的平均粒径。

    Method for manufacturing photoelectric conversion device
    2.
    发明授权
    Method for manufacturing photoelectric conversion device 有权
    制造光电转换装置的方法

    公开(公告)号：US08709860B2

    公开(公告)日：2014-04-29

    申请号：US13640526

    申请日：2011-04-12

    申请人： Shintaro Kubo ,  Rui Kamada ,  Yusuke Miyamichi ,  Shuji Nakazawa

    发明人： Shintaro Kubo ,  Rui Kamada ,  Yusuke Miyamichi ,  Shuji Nakazawa

    IPC分类号： H01L21/00 ,  H01L31/032 ,  H01L21/02 ,  H01L31/0749 ,  H01L31/18

    CPC分类号： H01L31/0322 ,  H01L21/02628 ,  H01L31/046 ,  H01L31/0465 ,  H01L31/056 ,  H01L31/0749 ,  H01L31/18 ,  Y02E10/52 ,  Y02E10/541 ,  Y02P70/521

    摘要： The object is to improve the conversion efficiency of a photoelectric conversion device. This object can be achieved by a photoelectric conversion device including an electrode and a semiconductor layer which is provided on one main surface of the electrode and contains a I-III-VI group compound semiconductor, wherein the semiconductor layer includes a connection layer that is located at a position on the one main surface side of the electrode and has a tendency that, the closer to the one main surface, the greater a quotient obtained by dividing an amount of substance of a I-B group element by an amount of substance of a III-B group element becomes.

    摘要翻译： 目的是提高光电转换装置的转换效率。 该目的可以通过包括电极和半导体层的光电转换装置来实现，该电极和半导体层设置在电极的一个主表面上并且包含I-III-VI族化合物半导体，其中半导体层包括位于 在电极的一个主表面侧的位置处，并且具有这样的趋势：越靠近一个主表面，通过将IB族元素的物质的量除以III的物质的量获得的商量越大 -B组元素变成。

    PHOTOELECTRIC CONVERSION DEVICE AND METHOD FOR MANUFACTURING PHOTOELECTRIC CONVERSION DEVICE
    3.
    发明申请
    PHOTOELECTRIC CONVERSION DEVICE AND METHOD FOR MANUFACTURING PHOTOELECTRIC CONVERSION DEVICE 有权
    光电转换装置及制造光电转换装置的方法

    公开(公告)号：US20130026588A1

    公开(公告)日：2013-01-31

    申请号：US13640526

    申请日：2011-04-12

    申请人： Shintaro Kubo ,  Rui Kamada ,  Yusuke Miyamichi ,  Shuji Nakazawa

    发明人： Shintaro Kubo ,  Rui Kamada ,  Yusuke Miyamichi ,  Shuji Nakazawa

    IPC分类号： H01L31/0264 ,  H01L31/18

    CPC分类号： H01L31/0322 ,  H01L21/02628 ,  H01L31/046 ,  H01L31/0465 ,  H01L31/056 ,  H01L31/0749 ,  H01L31/18 ,  Y02E10/52 ,  Y02E10/541 ,  Y02P70/521

    摘要： The object is to improve the conversion efficiency of a photoelectric conversion device. This object can be achieved by a photoelectric conversion device including an electrode and a semiconductor layer which is provided on one main surface of the electrode and contains a I-III-VI group compound semiconductor, wherein the semiconductor layer includes a connection layer that is located at a position on the one main surface side of the electrode and has a tendency that, the closer to the one main surface, the greater a quotient obtained by dividing an amount of substance of a I-B group element by an amount of substance of a III-B group element becomes.

    摘要翻译： 目的是提高光电转换装置的转换效率。 该目的可以通过包括电极和半导体层的光电转换装置来实现，该电极和半导体层设置在电极的一个主表面上并且包含I-III-VI族化合物半导体，其中半导体层包括位于 在电极的一个主表面侧的位置处，并且具有这样的趋势：越靠近一个主表面，通过将IB族元素的物质的量除以III的物质的量获得的商量越大 -B组元素变成。

    Photoelectric conversion device
    7.
    发明授权
    Photoelectric conversion device 有权
    光电转换装置

    公开(公告)号：US08772826B2

    公开(公告)日：2014-07-08

    申请号：US13701150

    申请日：2011-05-30

    申请人： Hideaki Asao ,  Rui Kamada ,  Shuichi Kasai ,  Seiji Oguri ,  Isamu Tanaka ,  Nobuyuki Horiuchi ,  Kazumasa Umesato

    发明人： Hideaki Asao ,  Rui Kamada ,  Shuichi Kasai ,  Seiji Oguri ,  Isamu Tanaka ,  Nobuyuki Horiuchi ,  Kazumasa Umesato

    IPC分类号： H01L29/88 ,  H01L29/861

    CPC分类号： H01L31/0272 ,  H01L31/0322 ,  H01L31/046 ,  H01L31/0465 ,  Y02E10/541

    摘要： It is an object to provide a photoelectric conversion device with high photoelectric conversion efficiency. The photoelectric conversion device includes an electrode layer, and a light absorbing layer located on the electrode layer. The light absorbing layer is comprised of a plurality of stacked semiconductor layers containing a chalcopyrite-based compound semiconductor. The semiconductor layers contain oxygen. A molar concentration of the oxygen in surfaces and their vicinities of the semiconductor layers where the semiconductor layers are stacked on each other is higher than average molar concentrations of the oxygen in the semiconductor layers.

    摘要翻译： 本发明的目的是提供一种具有高光电转换效率的光电转换装置。 光电转换装置包括电极层和位于电极层上的光吸收层。 光吸收层由含有黄铜矿类化合物半导体的多个层叠半导体层构成。 半导体层含有氧。 半导体层彼此层叠的半导体层的表面的摩尔浓度及其附近的摩尔浓度高于半导体层中的氧的平均摩尔浓度。

    PHOTOELECTRIC CONVERSION DEVICE
    8.
    发明申请
    PHOTOELECTRIC CONVERSION DEVICE 有权
    光电转换器件

    公开(公告)号：US20130069187A1

    公开(公告)日：2013-03-21

    申请号：US13701150

    申请日：2011-05-30

    申请人： Hideaki Asao ,  Rui Kamada ,  Shuichi Kasai ,  Seiji Oguri ,  Isamu Tanaka ,  Nobuyuki Horiuchi ,  Kazumasa Umesato

    发明人： Hideaki Asao ,  Rui Kamada ,  Shuichi Kasai ,  Seiji Oguri ,  Isamu Tanaka ,  Nobuyuki Horiuchi ,  Kazumasa Umesato

    IPC分类号： H01L31/0272

    CPC分类号： H01L31/0272 ,  H01L31/0322 ,  H01L31/046 ,  H01L31/0465 ,  Y02E10/541

    摘要： It is an object to provide a photoelectric conversion device with high photoelectric conversion efficiency. The photoelectric conversion device includes an electrode layer, and a light absorbing layer located on the electrode layer. The light absorbing layer is comprised of a plurality of stacked semiconductor layers containing a chalcopyrite-based compound semiconductor. The semiconductor layers contain oxygen. A molar concentration of the oxygen in surfaces and their vicinities of the semiconductor layers where the semiconductor layers are stacked on each other is higher than average molar concentrations of the oxygen in the semiconductor layers.

    摘要翻译： 本发明的目的是提供一种具有高光电转换效率的光电转换装置。 光电转换装置包括电极层和位于电极层上的光吸收层。 光吸收层由含有黄铜矿类化合物半导体的多个层叠半导体层构成。 半导体层含有氧。 半导体层彼此层叠的半导体层的表面的摩尔浓度及其附近的摩尔浓度高于半导体层中的氧的平均摩尔浓度。

    Photoelectric Conversion Device and Method of Manufacturing the Same, and Photoelectric Power Generation Device
    9.
    发明申请
    Photoelectric Conversion Device and Method of Manufacturing the Same, and Photoelectric Power Generation Device 审中-公开
    光电转换装置及其制造方法以及光电发电装置

    公开(公告)号：US20090133741A1

    公开(公告)日：2009-05-28

    申请号：US12065486

    申请日：2006-09-04

    申请人： Hisashi Higuchi ,  Yuji Kishida ,  Rui Kamada

    发明人： Hisashi Higuchi ,  Yuji Kishida ,  Rui Kamada

    IPC分类号： H01L31/04 ,  H01L31/02

    CPC分类号： H01G9/2031 ,  H01G9/2068 ,  Y02E10/542 ,  Y02P70/521

    摘要： A photoelectric conversion device 1 comprises a laminated body comprising a conducting substrate 2, and an opposing electrode layer 3, a porous spacer layer 5 containing an electrolyte 4, a porous semiconductor layer 7 that adsorbs a dye 6 and contains the electrolyte 4 and a light-transmitting conductive layer 8 respectively laminated in this order on the conducting substrate 2. Consequently, the thickness of the electrolyte layer determined previously by a gap between two substrates is allowed to be determined according to the thickness of a spacer layer containing an electrolyte 4, and thus the electrolyte layer can be made both thin and uniform, and the conversion efficiency and reliability can be improved.

    摘要翻译： 光电转换装置1包括层叠体，其包括导电基板2和相对电极层3，包含电解质4的多孔间隔层5，吸附染料6并含有电解质4的多孔半导体层7和光 在导电性基板2上依次层叠有导电层8。因此，可以根据含有电解质4的间隔层的厚度来确定由两个基板之间的间隙预先确定的电解质层的厚度， 因此可以使电解质层既薄又均匀，可提高转换效率和可靠性。

    PHOTOELECTRIC CONVERSION DEVICE
    10.
    发明申请
    PHOTOELECTRIC CONVERSION DEVICE 有权
    光电转换器件

    公开(公告)号：US20130099226A1

    公开(公告)日：2013-04-25

    申请号：US13807050

    申请日：2011-06-28

    申请人： Rui Kamada ,  Shuichi Kasai

    发明人： Rui Kamada ,  Shuichi Kasai

    IPC分类号： H01L31/0272

    CPC分类号： H01L31/0272 ,  H01L31/0322 ,  H01L31/046 ,  H01L31/0749 ,  Y02E10/541

    摘要： It is aimed to provide a photoelectric conversion device having high adhesion between a first semiconductor layer and an electrode layer as well as high photoelectric conversion efficiency. A photoelectric conversion device comprises an electrode layer, a first semiconductor layer located on the electrode layer and comprising a chalcopyrite-based compound semiconductor of group I-III-VI and oxygen, and a second semiconductor layer located on the first semiconductor layer and forming a pn junction with the first semiconductor layer. In the photoelectric conversion device, the first semiconductor layer has a higher molar concentration of oxygen in a part located on the electrode layer side with respect to a center portion in a lamination direction of the first semiconductor layer than a molar concentration of oxygen in the whole of the first semiconductor layer.

    摘要翻译： 目的在于提供一种在第一半导体层和电极层之间具有高粘附性的光电转换装置以及高的光电转换效率。 光电转换装置包括电极层，位于电极层上的第一半导体层，其包含基于I-III-VI族的氧化铜的黄铜矿型化合物半导体和位于第一半导体层上的第二半导体层， pn结与第一半导体层。 在光电转换装置中，第一半导体层在第一半导体层的层叠方向上相对于中心部分位于电极层一侧的部分中的氧摩尔浓度高于整个氧气的摩尔浓度 的第一半导体层。