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1.发明授权Pattern generating method, pattern forming method, and pattern generating program 有权图案生成方法，图案形成方法和图案生成程序公开(公告)号：US09268208B2
公开(公告)日：2016-02-23
申请号：US13421688
申请日：2012-03-15
CPC分类号： G03F1/36 , G03F1/22 , G03F1/70 , G03F7/70441 , G03F7/70941
摘要： One embodiment includes: a step of evaluating an amount of flare occurring through a mask at EUV exposure; a step of providing a dummy mask pattern on the mask based on the evaluated result of the amount of flare; and a step of executing a flare correction and an optical proximity correction on a layout pattern. The layout pattern is provided by the EUV exposure through the mask with the dummy mask pattern.
摘要翻译： 一个实施例包括：评估在EUV暴露下通过掩模发生的耀斑的量的步骤; 基于闪光量的评价结果，在掩模上设置虚拟掩模图案的步骤; 以及在布局图案上执行闪光校正和光学邻近校正的步骤。 布局图案由通过掩模的EUV曝光与伪掩模图案提供。
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2.发明申请PATTERN GENERATING METHOD, PATTERN FORMING METHOD, AND PATTERN GENERATING PROGRAM 有权图案生成方法，图案形成方法和图案生成程序公开(公告)号：US20130063707A1
公开(公告)日：2013-03-14
申请号：US13421688
申请日：2012-03-15
IPC分类号： G03B27/42
CPC分类号： G03F1/36 , G03F1/22 , G03F1/70 , G03F7/70441 , G03F7/70941
摘要： One embodiment includes: a step of evaluating an amount of flare occurring through a mask at EUV exposure; a step of providing a dummy mask pattern on the mask based on the evaluated result of the amount of flare; and a step of executing a flare correction and an optical proximity correction on a layout pattern. The layout pattern is provided by the EUV exposure through the mask with the dummy mask pattern.
摘要翻译： 一个实施例包括：评估在EUV暴露下通过掩模发生的耀斑的量的步骤; 基于闪光量的评价结果，在掩模上设置虚拟掩模图案的步骤; 以及在布局图案上执行闪光校正和光学邻近校正的步骤。 布局图案由通过掩模的EUV曝光与伪掩模图案提供。
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3.发明申请PATTERN LAYOUT CREATION METHOD, PROGRAM PRODUCT, AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD 有权图案布局创建方法，程序产品和半导体器件制造方法公开(公告)号：US20100191357A1
公开(公告)日：2010-07-29
申请号：US12630048
申请日：2009-12-03
申请人： Shimon Maeda , Masahiro Miyairi , Soichi Inoue
发明人： Shimon Maeda , Masahiro Miyairi , Soichi Inoue
IPC分类号： G06F17/50
CPC分类号： G06F17/5068 , G06F2217/12 , Y02P90/265
摘要： A graph in which patterns are each regarded as nodes and nodes of patterns adjacent to each other at a first distance are connected with each other by an edge is produced, each of the patterns is classified into two types so that the two patterns corresponding to the nodes at both ends of the edge are types different to each other, a classification result is corrected by grouping the patterns in each node cluster connected by the edge or each node cluster connected via the node by the edge, and by inverting each of types of a pattern belonging to a same group as that of one pattern, out of a pair of patterns that are classified into a same type and that belong to respectively different groups adjacent to each other at a second distance, and a pattern layout diagram is created based on the corrected classification result.
摘要翻译： 每个图形被认为是在第一距离处彼此相邻的图案的节点和节点之间的图形被生成，每个图案被分成两种类型，使得对应于 边缘两端的节点是彼此不同的类型，分类结果通过将由边缘连接的每个节点簇中的模式或通过该节点连接的每个节点集合的边缘分组，并将每种类型的 在一对图案中属于与一种图案相同的组合的图案，其分为相同类型并且分别属于彼此相邻的第二距离的不同组，并且基于图案布局图 对正确的分类结果。
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4.发明授权Dimension assurance of mask using plurality of types of pattern ambient environment 有权使用多种图案周边环境的面膜尺寸保证公开(公告)号：US08336004B2
公开(公告)日：2012-12-18
申请号：US13024604
申请日：2011-02-10
IPC分类号： G06F17/50
摘要： According to a mask verifying method of the embodiment, a difference between an actual dimension of a mask pattern and a simulation dimension is calculated as a computational estimated value. Moreover, a difference between an actual dimension of the mask pattern that is actually measured and a dimension on pattern data is calculated as an actually-measured difference. Then, it is verified whether a mask pattern dimension passes or fails based on the calculated value. When calculating the computational estimated value, a model function, which is set based on each correspondence relationship between an actual dimension and a mask simulation dimension of a test pattern, which includes a plurality of types of pattern ambient environments, to the mask pattern.
摘要翻译： 根据本实施例的掩模验证方法，计算掩模图案的实际尺寸与模拟尺寸之间的差异作为计算估计值。 此外，将实际测量的掩模图案的实际尺寸与图案数据上的尺寸之间的差计算为实际测量的差。 然后，根据计算值验证掩模图案尺寸是否通过或失败。 当计算计算估计值时，将基于包括多种图案环境环境的测试图案的实际尺寸和掩模模拟尺寸之间的每个对应关系设置的模型函数提供给掩模图案。
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5.发明授权Pattern layout creation method, program product, and semiconductor device manufacturing method 有权图案布局创建方法，程序产品和半导体器件制造方法公开(公告)号：US08261214B2
公开(公告)日：2012-09-04
申请号：US12630048
申请日：2009-12-03
申请人： Shimon Maeda , Masahiro Miyairi , Soichi Inoue
发明人： Shimon Maeda , Masahiro Miyairi , Soichi Inoue
IPC分类号： G06F17/50
CPC分类号： G06F17/5068 , G06F2217/12 , Y02P90/265
摘要： A graph in which patterns are each regarded as nodes and nodes of patterns adjacent to each other at a first distance are connected with each other by an edge is produced, each of the patterns is classified into two types so that the two patterns corresponding to the nodes at both ends of the edge are types different to each other, a classification result is corrected by grouping the patterns in each node cluster connected by the edge or each node cluster connected via the node by the edge, and by inverting each of types of a pattern belonging to a same group as that of one pattern, out of a pair of patterns that are classified into a same type and that belong to respectively different groups adjacent to each other at a second distance, and a pattern layout diagram is created based on the corrected classification result.
摘要翻译： 每个图形被认为是在第一距离处彼此相邻的图案的节点和节点之间的图形被生成，每个图案被分成两种类型，使得对应于 边缘两端的节点是彼此不同的类型，分类结果通过将由边缘连接的每个节点簇中的模式或通过该节点连接的每个节点集合的边缘分组，并将每种类型的 在一对图案中属于与一种图案相同的组合的图案，其分为相同类型并且分别属于彼此相邻的第二距离的不同组，并且基于图案布局图 对正确的分类结果。
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6.发明授权Pattern data creating method, pattern data creating program, and semiconductor device manufacturing method 有权图案数据创建方法，图案数据创建程序和半导体器件制造方法公开(公告)号：US08234596B2
公开(公告)日：2012-07-31
申请号：US12552010
申请日：2009-09-01
申请人： Ryuji Ogawa , Masahiro Miyairi , Shimon Maeda , Suigen Kyoh , Satoshi Tanaka
发明人： Ryuji Ogawa , Masahiro Miyairi , Shimon Maeda , Suigen Kyoh , Satoshi Tanaka
IPC分类号： G06F17/50
CPC分类号： G03F1/36
摘要： A pattern data creating method according to an embodiment of the present invention comprises: extracting marginal error patterns using a first result obtained by applying process simulation to mask pattern data based on an evaluation target cell pattern, applying the process simulation to mask pattern data based on an evaluation target cell pattern with peripheral environment pattern created by arranging a peripheral environment pattern in the marginal error patterns such that a second result obtained by creating mask pattern data and applying the process simulation to the mask pattern data is more deteriorated than the first result, and correcting the evaluation target cell pattern or the mask pattern data based on the evaluation target cell pattern when there is a fatal error.
摘要翻译： 根据本发明的实施例的图形数据创建方法包括：使用通过应用过程模拟获得的第一结果来提取边缘误差模式以基于评估目标单元图案来屏蔽图案数据，将过程模拟应用于基于 通过将周边环境图案布置在边缘误差图案中，使得通过创建掩模图案数据获得的第二结果和对掩模图案数据应用处理模拟而得到的第一结果比第一结果更差，从而产生具有周边环境图案的评估对象单元图案， 以及当存在致命错误时，基于评估对象单元图案来校正评估对象单元格图案或掩模图案数据。
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7.发明申请MASK VERIFYING METHOD, MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE, AND COMPUTER PROGRAM PRODUCT 有权掩模验证方法，半导体器件的制造方法和计算机程序产品公开(公告)号：US20110201138A1
公开(公告)日：2011-08-18
申请号：US13024604
申请日：2011-02-10
摘要： According to a mask verifying method of the embodiment, a difference between an actual dimension of a mask pattern and a simulation dimension is calculated as a computational estimated value. Moreover, a difference between an actual dimension of the mask pattern that is actually measured and a dimension on pattern data is calculated as an actually-measured difference. Then, it is verified whether a mask pattern dimension passes or fails based on the calculated value. When calculating the computational estimated value, a model function, which is set based on each correspondence relationship between an actual dimension and a mask simulation dimension of a test pattern, which includes a plurality of types of pattern ambient environments, to the mask pattern.
摘要翻译： 根据本实施例的掩模验证方法，计算掩模图案的实际尺寸与模拟尺寸之间的差异作为计算估计值。 此外，将实际测量的掩模图案的实际尺寸与图案数据上的尺寸之间的差计算为实际测量的差。 然后，根据计算值验证掩模图案尺寸是否通过或失败。 当计算计算估计值时，将基于包括多种图案环境环境的测试图案的实际尺寸和掩模模拟尺寸之间的每个对应关系设置的模型函数提供给掩模图案。
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8.发明申请PATTERN DATA CREATING METHOD, PATTERN DATA CREATING PROGRAM, AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD 有权图形数据创建方法，图形数据创建程序和半导体器件制造方法公开(公告)号：US20100081294A1
公开(公告)日：2010-04-01
申请号：US12552010
申请日：2009-09-01
申请人： Ryuji OGAWA , Masahiro Miyairi , Shimon Maeda , Suigen Kyoh , Satoshi Tanaka
发明人： Ryuji OGAWA , Masahiro Miyairi , Shimon Maeda , Suigen Kyoh , Satoshi Tanaka
IPC分类号： H01L21/027 , G06F17/50
CPC分类号： G03F1/36
摘要： A pattern data creating method according to an embodiment of the present invention comprises: extracting marginal error patterns using a first result obtained by applying process simulation to mask pattern data based on an evaluation target cell pattern, applying the process simulation to mask pattern data based on an evaluation target cell pattern with peripheral environment pattern created by arranging a peripheral environment pattern in the marginal error patterns such that a second result obtained by creating mask pattern data and applying the process simulation to the mask pattern data is more deteriorated than the first result, and correcting the evaluation target cell pattern or the mask pattern data based on the evaluation target cell pattern when there is a fatal error.
摘要翻译： 根据本发明的实施例的图形数据创建方法包括：使用通过应用过程模拟获得的第一结果来提取边缘误差模式以基于评估目标单元图案来屏蔽图案数据，将过程模拟应用于基于 通过将周边环境图案布置在边缘误差图案中，使得通过创建掩模图案数据获得的第二结果和对掩模图案数据应用处理模拟而得到的第一结果比第一结果更差，从而产生具有周边环境图案的评估对象单元图案， 以及当存在致命错误时，基于评估对象单元图案来校正评估对象单元格图案或掩模图案数据。
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