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公开(公告)号：US07335315B2
公开(公告)日：2008-02-26
申请号：US10513396
申请日：2003-06-17
申请人： Ryuichi Matsuda , Yuichi Kawano , Masahiko Inoue
发明人： Ryuichi Matsuda , Yuichi Kawano , Masahiko Inoue
IPC分类号： G01L21/30
CPC分类号： H01L21/67253 , H01L21/67248 , H01L21/6831
摘要： The present invention attracts a wafer 6, placed on a susceptor 5, toward the susceptor 5 by the electrostatic attractive power of an electrostatic chuck electrode 7, varies the output voltage of a variable direct current power source 23 for the electrostatic chuck electrode 7 while measuring the temperature of the wafer 6 by a temperature detection sensor 21; and detects the potential of the wafer 6 based on the output voltage of the variable direct current power source 23 at a time when the temperature of the wafer 6 peaks.
摘要翻译： 本发明通过静电卡盘电极7的静电吸引力吸引放置在基座5上的晶片6，从而使静电卡盘电极7的可变直流电源23的输出电压变化，同时测量 温度检测传感器21的晶片6的温度; 并且在晶片6的温度高峰时基于可变直流电源23的输出电压来检测晶片6的电位。
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公开(公告)号：US20050174135A1
公开(公告)日：2005-08-11
申请号：US10513396
申请日：2003-06-17
申请人： Ryuichi Matsuda , Yuichi Kawano , Masahiko Inoue
发明人： Ryuichi Matsuda , Yuichi Kawano , Masahiko Inoue
IPC分类号： H01L21/00 , H01L21/683 , G01R31/02
CPC分类号： H01L21/67253 , H01L21/67248 , H01L21/6831
摘要： The present invention attracts a wafer 6, placed on a susceptor 5, toward the susceptor 5 by the electrostatic attractive power of an electrostatic chuck electrode 7, varies the output voltage of a variable direct current power source 23 for the electrostatic chuck electrode 7 while measuring the temperature of the wafer 6 by a temperature detection sensor 21; and detects the potential of the wafer 6 based on the output voltage of the variable direct current power source 23 at a time when the temperature of the wafer 6 peaks.
摘要翻译： 本发明通过静电卡盘电极7的静电吸引力吸引放置在基座5上的晶片6，从而使静电卡盘电极7的可变直流电源23的输出电压变化，同时测量 温度检测传感器21的晶片6的温度; 并且在晶片6的温度高峰时基于可变直流电源23的输出电压来检测晶片6的电位。
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公开(公告)号：US08960124B2
公开(公告)日：2015-02-24
申请号：US13322192
申请日：2010-05-24
申请人： Ryuichi Matsuda , Kazuto Yoshida , Yuichi Kawano
发明人： Ryuichi Matsuda , Kazuto Yoshida , Yuichi Kawano
CPC分类号： H01J37/32577 , C23C16/4404 , C23C16/50 , H01J37/32467 , H01J37/32504 , Y10S156/916
摘要： Provided are a plasma processing apparatus and a plasma processing method wherein particles generated due to the inner potential of an inner cylinder disposed inside of a vacuum container are reduced. The plasma processing apparatus has, inside of a metal vacuum chamber (11), the inner cylinder (15) composed of a surface-alumited aluminum, disposes a substrate in a plasma diffusion region, and performs plasma processing. A plurality of protruding portions (15a) in point-contact with the vacuum chamber (11) are provided on the lower end portion of the inner cylinder (15), the alumite film (16) on the leading end portion (15b) of each of the protruding portion (15a) is removed, and the inner cylinder and the vacuum chamber (11) are electrically connected to each other.
摘要翻译： 提供了一种等离子体处理装置和等离子体处理方法，其中由于设置在真空容器内部的内筒的内部电位而产生的颗粒减少。 等离子体处理装置在金属真空室（11）的内部，由表面氧化铝构成的内筒（15）在等离子体扩散区域内配置基板，进行等离子体处理。 在内筒15的下端设有多个与真空室11相接触的突出部15a，每个的前端部15b的防蚀铝膜16， 突出部分（15a）被移除，并且内筒和真空室（11）彼此电连接。
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公开(公告)号：US20120125891A1
公开(公告)日：2012-05-24
申请号：US13322192
申请日：2010-05-24
申请人： Ryuichi Matsuda , Kazuto Yoshida , Yuichi Kawano
发明人： Ryuichi Matsuda , Kazuto Yoshida , Yuichi Kawano
IPC分类号： B44C1/22 , H05H1/24 , B05C5/02 , C23C16/455 , B05C5/00
CPC分类号： H01J37/32577 , C23C16/4404 , C23C16/50 , H01J37/32467 , H01J37/32504 , Y10S156/916
摘要： Provided are a plasma processing apparatus and a plasma processing method wherein particles generated due to the inner potential of an inner cylinder disposed inside of a vacuum container are reduced. The plasma processing apparatus has, inside of a metal vacuum chamber (11), the inner cylinder (15) composed of a surface-alumited aluminum, disposes a substrate in a plasma diffusion region, and performs plasma processing. A plurality of protruding portions (15a) in point-contact with the vacuum chamber (11) are provided on the lower end portion of the inner cylinder (15), the alumite film (16) on the leading end portion (15b) of each of the protruding portion (15a) is removed, and the inner cylinder and the vacuum chamber (11) are electrically connected to each other.
摘要翻译： 提供了一种等离子体处理装置和等离子体处理方法，其中由于设置在真空容器内部的内筒的内部电位而产生的颗粒减少。 等离子体处理装置在金属真空室（11）的内部，由表面氧化铝构成的内筒（15）在等离子体扩散区域内配置基板，进行等离子体处理。 在内筒15的下端设有多个与真空室11相接触的突出部15a，每个的前端部15b的防蚀铝膜16， 突出部分（15a）被移除，并且内筒和真空室（11）彼此电连接。
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公开(公告)号：US07972946B2
公开(公告)日：2011-07-05
申请号：US12373146
申请日：2007-07-24
IPC分类号： H01L21/425 , H01L21/31 , H01L21/469 , H01L21/00 , H05H1/24 , H05H1/02 , H05H1/10
CPC分类号： H01L21/3185 , C23C16/345 , C23C16/505 , H01L21/0217 , H01L21/02211 , H01L21/02274
摘要： Provided are a plasma treatment method and a plasma treatment device capable of forming a silicon nitride film having high compressive stress. In the plasma treatment method for depositing the silicon nitride film on a process target substrate by use of plasma of raw material gas containing silicon and hydrogen and of nitrogen gas, ion energy for disconnecting nitrogen-hydrogen bonding representing a state of bonding between the hydrogen in the raw material gas and the nitrogen gas is applied to the process target substrate so as to reduce an amount of nitrogen-hydrogen bonding contained in the silicon nitride film.
摘要翻译： 提供能够形成具有高压缩应力的氮化硅膜的等离子体处理方法和等离子体处理装置。 在通过使用含有硅和氢气和氮气的原料气体的等离子体将氮化硅膜沉积在工艺目标衬底上的等离子体处理方法中，用于断开代表氢的键合状态的氮 - 氢键的离子能 将原料气体和氮气施加到处理对象基板，以减少氮化硅膜中所含的氮 - 氢键的量。
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公开(公告)号：US20090176380A1
公开(公告)日：2009-07-09
申请号：US12373146
申请日：2007-07-24
CPC分类号： H01L21/3185 , C23C16/345 , C23C16/505 , H01L21/0217 , H01L21/02211 , H01L21/02274
摘要： Provided are a plasma treatment method and a plasma treatment device capable of forming a silicon nitride film having high compressive stress. In the plasma treatment method for depositing the silicon nitride film on a process target substrate by use of plasma of raw material gas containing silicon and hydrogen and of nitrogen gas, ion energy for disconnecting nitrogen-hydrogen bonding representing a state of bonding between the hydrogen in the raw material gas and the nitrogen gas is applied to the process target substrate so as to reduce an amount of nitrogen-hydrogen bonding contained in the silicon nitride film.
摘要翻译： 提供能够形成具有高压缩应力的氮化硅膜的等离子体处理方法和等离子体处理装置。 在通过使用含有硅和氢气和氮气的原料气体的等离子体将氮化硅膜沉积在工艺目标衬底上的等离子体处理方法中，用于断开代表氢的键合状态的氮 - 氢键的离子能 将原料气体和氮气施加到处理对象基板，以减少氮化硅膜中所含的氮 - 氢键的量。
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公开(公告)号：US20100323975A1
公开(公告)日：2010-12-23
申请号：US12809857
申请日：2008-12-25
申请人： Yuichi Kawano , Kazuhisa Doi , Takuya Nii
发明人： Yuichi Kawano , Kazuhisa Doi , Takuya Nii
CPC分类号： A61K38/05 , A61K9/0019 , A61K9/08 , C07K5/06026
摘要： A therapeutic agent for cerebral ischemic injury contains at least one selected from L-alanyl-L-histidine and glycyl-L-histidine as an active ingredient. The therapeutic agent for cerebral ischemic injury preferably has a dosage form as an injection for intravenous administration. The therapeutic agent for cerebral ischemic injury having a dosage form as an aqueous injection contains at least one selected from L-alanyl-L-histidine and glycyl-L-histidine at a concentration of preferably 0.3 to 3.5 mol/L, and more preferably 0.6 to 2.1 mol/L.
摘要翻译： 脑缺血损伤治疗剂含有选自L-丙氨酰-L-组氨酸和甘氨酰-L-组氨酸中的至少一种作为活性成分。 脑缺血损伤治疗剂优选具有作为静脉内给药用注射剂的剂型。 具有作为水性注射剂型的脑缺血损伤治疗剂含有选自L-丙氨酰-L-组氨酸和甘氨酰-L-组氨酸中的至少一种，浓度优选为0.3〜3.5mol / L，更优选为0.6 至2.1mol / L。
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公开(公告)号：US07602040B2
公开(公告)日：2009-10-13
申请号：US12102532
申请日：2008-04-14
CPC分类号： H01L21/76832 , H01L21/76801 , H01L21/76808 , H01L23/5258 , H01L23/53238 , H01L23/53295 , H01L27/10 , H01L2224/13
摘要： In order to improve the reliability of a semiconductor device having a fuse formed by a Damascene technique, a barrier insulating film and an inter-layer insulating film are deposited over a fourth-layer wiring and a fuse. The barrier insulating film is an insulating film for preventing the diffusion of Cu and composed of a SiCN film deposited by plasma CVD like the underlying barrier insulating film. The thickness of the barrier insulating film covering the fuse is larger than the thickness of the underlying barrier insulating film so as to improve the moisture resistance of the fuse.
摘要翻译： 为了提高具有由Damascene技术形成的熔丝的半导体器件的可靠性，在第四层布线和熔丝上沉积阻挡绝缘膜和层间绝缘膜。 隔离绝缘膜是用于防止由于等离子体CVD沉积的SiCN薄膜扩散而形成的绝缘膜，如下面的阻挡绝缘膜。 覆盖保险丝的阻挡绝缘膜的厚度大于下面的阻挡绝缘膜的厚度，以提高保险丝的耐湿性。
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公开(公告)号：US07419901B2
公开(公告)日：2008-09-02
申请号：US11453897
申请日：2006-06-16
IPC分类号： H01L21/4763
CPC分类号： H01L21/76832 , H01L21/76801 , H01L21/76808 , H01L23/5258 , H01L23/53238 , H01L23/53295 , H01L27/10 , H01L2224/13
摘要： In order to improve the reliability of a semiconductor device having a fuse formed by a Damascene technique, a barrier insulating film and an inter-layer insulating film are deposited over a fourth-layer wiring and a fuse. The barrier insulating film is an insulating film for preventing the diffusion of Cu and composed of a SiCN film deposited by plasma CVD like the underlying barrier insulating film. The thickness of the barrier insulating film covering the fuse is larger than the thickness of the underlying barrier insulating film so as to improve the moisture resistance of the fuse.
摘要翻译： 为了提高具有由Damascene技术形成的熔丝的半导体器件的可靠性，在第四层布线和熔丝上沉积阻挡绝缘膜和层间绝缘膜。 隔离绝缘膜是用于防止由于等离子体CVD沉积的SiCN薄膜扩散而形成的绝缘膜，如下面的阻挡绝缘膜。 覆盖保险丝的阻挡绝缘膜的厚度大于下面的阻挡绝缘膜的厚度，以提高保险丝的耐湿性。
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公开(公告)号：US20070026664A1
公开(公告)日：2007-02-01
申请号：US11453897
申请日：2006-06-16
IPC分类号： H01L21/4763
CPC分类号： H01L21/76832 , H01L21/76801 , H01L21/76808 , H01L23/5258 , H01L23/53238 , H01L23/53295 , H01L27/10 , H01L2224/13
摘要： In order to improve the reliability of a semiconductor device having a fuse formed by a Damascene technique, a barrier insulating film and an inter-layer insulating film are deposited over a fourth-layer wiring and a fuse. The barrier insulating film is an insulating film for preventing the diffusion of Cu and composed of a SiCN film deposited by plasma CVD like the underlying barrier insulating film. The thickness of the barrier insulating film covering the fuse is larger than the thickness of the underlying barrier insulating film so as to improve the moisture resistance of the fuse.
摘要翻译： 为了提高具有由Damascene技术形成的熔丝的半导体器件的可靠性，在第四层布线和熔丝上沉积阻挡绝缘膜和层间绝缘膜。 隔离绝缘膜是用于防止由于等离子体CVD沉积的SiCN薄膜扩散而形成的绝缘膜，如下面的阻挡绝缘膜。 覆盖保险丝的阻挡绝缘膜的厚度大于下面的阻挡绝缘膜的厚度，以提高保险丝的耐湿性。
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