Method for producing semiconductor device and apparatus usable therein
    2.
    发明授权
    Method for producing semiconductor device and apparatus usable therein 失效
    用于制造半导体器件的方法和可用于其中的装置

    公开(公告)号:US06465264B1

    公开(公告)日:2002-10-15

    申请号:US09654612

    申请日:2000-09-01

    IPC分类号: G01R3126

    摘要: A packaging device for holding thereon a plurality of semiconductor devices to be inspected on an inspection device including a probe to be electrically connected to an electrode of each of the semiconductor devices, comprises, holes for respectively receiving detachably therein the semiconductor devices to keep a positional relationship among the semiconductor devices and a positional relationship between the packaging device and each of the semiconductor devices constant with a spacing between the semiconductor devices, in a direction perpendicular to a thickness direction of the semiconductor devices, and electrically conductive members adapted to be connected respectively to the electrodes of the semiconductor devices, and extending to an exterior of the packaging device so that the probe is connected to each of the electrically conductive members.

    摘要翻译: 一种用于在其上保持要检查的多个待检查的半导体器件的封装装置,包括:电连接到每个半导体器件的电极的探针,包括:用于分别接收半导体器件中的可分离地接收的孔,以保持位置 半导体器件之间的关系以及在与半导体器件的厚度方向垂直的方向上半导体器件之间的间隔恒定的封装器件和每个半导体器件之间的位置关系以及适于分别连接的导电部件 并且延伸到包装装置的外部,使得探针连接到每个导电构件。

    Semiconductor testing equipment with probe formed on a cantilever of a substrate
    3.
    发明授权
    Semiconductor testing equipment with probe formed on a cantilever of a substrate 失效
    具有探针的半导体测试设备形成在基板的悬臂上

    公开(公告)号:US06507204B1

    公开(公告)日:2003-01-14

    申请号:US09522477

    申请日:2000-03-09

    IPC分类号: G01R3102

    摘要: The conventional semiconductor element testing equipment is arranged to position each probe accurately and need a burdensome operation for fixing, and includes only a limited number of electrode pads and chips to be tested at a batch. An equipment for testing a semiconductor element is arranged to keep each of electrode pads formed on a semiconductor element to be tested in direct contact with each of probes formed on a first substrate composed of silicon, one of electric connecting substrates disposed in the equipment. On the first substrate, each probe is formed on a cantilever and a wire is routed from a tip of each probe along a tip of the cantilever to the electrode pad formed on an opposite surface to the probe forming surface through an insulating layer.

    摘要翻译: 常规的半导体元件测试设备被布置成准确地定位每个探针,并且需要用于固定的繁重的操作,并且仅包括有限数量的待批测试的电极焊盘和芯片。 布置了用于测试半导体元件的设备,以使每个形成在要测试的半导体元件上的电极焊盘与形成在由设置在设备中的电连接基板之一的硅构成的第一基板上形成的每个探针直接接触。 在第一基板上,每个探针形成在悬臂上,并且从每个探针的尖端沿着悬臂的尖端布线到通过绝缘层与探针形成表面相对的表面上形成的电极焊盘。

    Semiconductor inspection apparatus
    6.
    发明授权
    Semiconductor inspection apparatus 失效
    半导体检测仪器

    公开(公告)号:US06714030B2

    公开(公告)日:2004-03-30

    申请号:US10390412

    申请日:2003-03-18

    IPC分类号: G01R3102

    摘要: A semiconductor inspection apparatus which is possible to inspect a plurality of semiconductor devices collectively at one time, which has conventionally been difficult because of precision or the like of probes. A method of manufacturing the semiconductor inspection apparatus comprises the steps of forming a cover film on a surface of the silicon substrate and forming a plurality of probes of a polygonal cone shape or a circular cone shape through etching after patterning by photolithography, after the cover film is removed, again forming a cover film on the surface of the silicon substrate and forming a beam or a diaphragm for each probe through etching after patterning by photolithography, after the cover film is removed, again forming a cover film on the surface of the silicon substrate and forming a through hole corresponding to the probe through etching after patterning by photolithography, and after the cover film is removed, forming an insulating film on the surface of the silicon substrate, forming a metal film on a surface of the insulating film, and forming a wiring lead through etching after patterning by photolithography.

    摘要翻译: 可以一次共同地检查多个半导体器件的半导体检查装置,由于探针的精度等,以前难以进行。 一种制造半导体检查装置的方法包括以下步骤:在硅衬底的表面上形成覆盖膜,并通过光刻图案化之后通过蚀刻形成多个锥形或圆锥形的多个探针, 被去除,再次在硅衬底的表面上形成覆盖膜,并且通过光刻在图案化之后通过蚀刻形成用于每个探针的光束或隔膜,在除去覆盖膜之后,再次在硅表面上形成覆盖膜 在通过光刻图案化之后通过蚀刻形成与探针对应的通孔,并且在除去覆盖膜之后,在硅衬底的表面上形成绝缘膜,在绝缘膜的表面上形成金属膜,以及 通过光刻在图案化之后通过蚀刻形成布线引线。