公开(公告)号：US20130005123A1

公开(公告)日：2013-01-03

申请号：US13608818

申请日：2012-09-10

申请人： Ryusuke KAWAKAMI ,  Kenichirou NISHIDA ,  Norihito KAWAGUCHI ,  Miyuki MASAKI ,  Atsushi YOSHINOUCHI

发明人： Ryusuke KAWAKAMI ,  Kenichirou NISHIDA ,  Norihito KAWAGUCHI ,  Miyuki MASAKI ,  Atsushi YOSHINOUCHI

IPC分类号： H01L21/268 ,  B23K26/00

CPC分类号： H01L21/02675 ,  B23K26/0613 ,  B23K26/0732 ,  H01L21/0268 ,  H01L21/02691 ,  H01L21/268 ,  H01L27/1285 ,  H01L27/1296

摘要： A laser annealing method for executing laser annealing by irradiating a semiconductor film formed on a surface of a substrate with a laser beam, the method including the steps of, generating a linearly polarized rectangular laser beam whose cross section perpendicular to an advancing direction is a rectangle with an electric field directed toward a long-side direction of the rectangle or an elliptically polarized rectangular laser beam having a major axis directed toward a long-side direction, causing the rectangular laser beam to be introduced to the surface of the substrate, and setting a wavelength of the rectangular laser beam to a length which is about a desired size of a crystal grain in a standing wave direction.

摘要翻译： 一种激光退火方法，用于通过用激光束照射形成在衬底的表面上的半导体膜来执行激光退火，所述方法包括以下步骤：产生线性偏振矩形激光束，其垂直于前进方向的截面为矩形 具有朝向矩形的长边方向的电场或具有指向长边方向的长轴的椭圆偏振矩形激光束，使矩形激光束被引入到基板的表面，并且设定 矩形激光束的波长长度大约为驻波方向的晶粒的期望尺寸。

公开(公告)号：US20110114855A1

公开(公告)日：2011-05-19

申请号：US12946051

申请日：2010-11-15

申请人： Ryusuke KAWAKAMI ,  Kenichirou NISHIDA ,  Norihito KAWAGUCHI ,  Miyuki MASAKI ,  Atsushi Yoshinouchi

发明人： Ryusuke KAWAKAMI ,  Kenichirou NISHIDA ,  Norihito KAWAGUCHI ,  Miyuki MASAKI ,  Atsushi Yoshinouchi

IPC分类号： B01J19/08

CPC分类号： H01L21/02675 ,  B23K26/0613 ,  B23K26/0732 ,  H01L21/0268 ,  H01L21/02691 ,  H01L21/268 ,  H01L27/1285 ,  H01L27/1296

摘要： A laser annealing method for executing laser annealing by irradiating a semiconductor film formed on a surface of a substrate with a laser beam, the method including the steps of, generating a linearly polarized rectangular laser beam whose cross section perpendicular to an advancing direction is a rectangle with an electric field directed toward a long-side direction of the rectangle or an elliptically polarized rectangular laser beam having a major axis directed toward a long-side direction, causing the rectangular laser beam to be introduced to the surface of the substrate, and setting a wavelength of the rectangular laser beam to a length which is about a desired size of a crystal grain in a standing wave direction.

摘要翻译： 一种激光退火方法，用于通过用激光束照射形成在衬底的表面上的半导体膜来执行激光退火，所述方法包括以下步骤：产生线性偏振矩形激光束，其垂直于前进方向的截面为矩形 具有朝向矩形的长边方向的电场或具有指向长边方向的长轴的椭圆偏振矩形激光束，使矩形激光束被引入到基板的表面，并且设定 矩形激光束的波长长度大约为驻波方向的晶粒的期望尺寸。

公开(公告)号：US20110086441A1

公开(公告)日：2011-04-14

申请号：US12997543

申请日：2008-06-12

申请人： Norihito KAWAGUCHI ,  Ryusuke KAWAKAMI ,  Kenichiro NISHIDA ,  Miyuki MASAKI ,  Masaru MORITA ,  Atsushi YOSHINOUCHI

发明人： Norihito KAWAGUCHI ,  Ryusuke KAWAKAMI ,  Kenichiro NISHIDA ,  Miyuki MASAKI ,  Masaru MORITA ,  Atsushi YOSHINOUCHI

IPC分类号： H01L21/66 ,  B23K26/06

CPC分类号： B23K26/0732 ,  B23K26/046 ,  B23K26/0665 ,  G02B27/0905 ,  G02B27/0966 ,  G02B27/48 ,  H01L21/02678

摘要： In laser annealing using a solid state laser, a focus position of a minor axial direction of a rectangular beam is easily corrected depending on positional variation of a laser irradiated portion of a semiconductor film. By using a minor-axis condenser lens 29 condensing incident light in a minor axial direction and a projection lens 30 projecting light, which comes from the minor-axis condenser lens 29, onto a surface of a semiconductor film 3, laser beam 1 is condensed on the surface of the semiconductor film 3 in the minor axial direction of a rectangular beam. The positional variation of a vertical direction of the semiconductor film 3 in a laser irradiated portion of the semiconductor film 3 is detected by a positional variation detector 31, and the minor-axis condenser lens 29 is moved in an optical axis direction based on a value of the detection.

摘要翻译： 在使用固态激光的激光退火中，根据半导体膜的激光照射部的位置变化容易校正矩形光束的小轴方向的聚焦位置。 通过使用将小轴聚光的次轴聚光透镜29和将来自短轴聚光透镜29的光投射到半导体膜3的表面上的投影透镜30，激光束1被冷凝 在半导体膜3的矩形梁的小轴向的表面上。 半导体膜3的激光照射部分中的半导体膜3的垂直方向的位置变化由位置变化检测器31检测，并且短轴聚光透镜29基于光轴方向在光轴方向上移动 的检测。

公开(公告)号：US20120168421A1

公开(公告)日：2012-07-05

申请号：US13418653

申请日：2012-03-13

申请人： Norihito KAWAGUCHI ,  Ryusuke KAWAKAMI ,  Kenichiro NISHIDA ,  Miyuki MASAKI ,  Masaru MORITA

发明人： Norihito KAWAGUCHI ,  Ryusuke KAWAKAMI ,  Kenichiro NISHIDA ,  Miyuki MASAKI ,  Masaru MORITA

IPC分类号： H05B7/18

CPC分类号： B23K26/0608 ,  B23K26/0676 ,  B23K26/0738 ,  B23K26/082 ,  H01L21/02532 ,  H01L21/02678 ,  H01L21/02686 ,  H01L21/02691 ,  H01L21/268

摘要： In the case of a lens array type homogenizer optical system, the incident angle and intensity of a laser beam 1 entering a large-sized lens (long-axis condenser lens 22) of a long-axis condensing optical system, which is provided on the rear side, are changed for every shot by performing laser irradiation while long-axis lens arrays 20a and 20b are reciprocated in a direction corresponding to a long axial direction of a linear beam (X-direction). Therefore, vertical stripes are significantly reduced. Further, the incident angle and intensity of a laser beam 1 entering a large-sized lens (projection lens 30) of a short-axis condensing optical system, which is provided on the rear side, are changed for every shot by performing laser irradiation while short-axis lens arrays 26a and 26b are reciprocated in a direction corresponding to a short axial direction of a linear beam (Y-direction). Therefore, horizontal stripes are significantly reduced.

摘要翻译： 在透镜阵列式均化器光学系统的情况下，入射到入射角度和强度的激光束1进入长轴聚光光学系统的大尺寸透镜（长轴聚光透镜22） 通过在长轴透镜阵列20a和20b沿与线性光束（X方向）的长轴方向对应的方向往复运动的同时通过执行激光照射而改变每一次的后侧。 因此，垂直条纹显着减少。 此外，通过进行激光照射来改变进入设置在后侧的短轴聚光光学系统的大尺寸透镜（投影透镜30）的激光束1的入射角度和强度， 短轴透镜阵列26a和26b在与线性光束（Y方向）的短轴方向对应的方向上往复运动。 因此，水平条纹显着减少。

公开(公告)号：US20120057613A1

公开(公告)日：2012-03-08

申请号：US13222427

申请日：2011-08-31

申请人： Kenichiro NISHIDA ,  Ryusuke KAWAKAMI ,  Norihito KAWAGUCHI ,  Miyuki MASAKI

发明人： Kenichiro NISHIDA ,  Ryusuke KAWAKAMI ,  Norihito KAWAGUCHI ,  Miyuki MASAKI

IPC分类号： H01S5/026

CPC分类号： B23K26/0738 ,  B23K26/0608 ,  B23K26/067 ,  B23K26/0732 ,  H01L21/02532 ,  H01L21/02678 ,  H01L21/02691 ,  H01L21/268 ,  H01L27/1285

摘要： The energy distribution in the short-side direction of a rectangular laser beam applied to an amorphous semiconductor film (amorphous silicon film) is uniformized. It is possible to the energy distribution in the short-side direction of the rectangular laser beam by the use of a cylindrical lens array 26 or a light guide 36 and concentrating optical systems 28 and 44 or by the use of an optical system including a diffracting optical element. Accordingly, since the effective energy range of a laser beam applied to the amorphous semiconductor film is widened and the transport speed of a substrate 3 can be enhanced as much, it is possible to improve the processing ability of the laser annealing.

摘要翻译： 施加到非晶半导体膜（非晶硅膜）的矩形激光束的短边方向上的能量分布均匀。 可以通过使用柱面透镜阵列26或光导36以及集中光学系统28和44或通过使用包括衍射的光学系统在矩形激光束的短边方向上的能量分布 光学元件。 因此，由于施加到非晶半导体膜的激光束的有效能量范围变宽，能够提高基板3的输送速度，所以能够提高激光退火的处理能力。