公开(公告)号：US20110086441A1

公开(公告)日：2011-04-14

申请号：US12997543

申请日：2008-06-12

申请人： Norihito KAWAGUCHI ,  Ryusuke KAWAKAMI ,  Kenichiro NISHIDA ,  Miyuki MASAKI ,  Masaru MORITA ,  Atsushi YOSHINOUCHI

发明人： Norihito KAWAGUCHI ,  Ryusuke KAWAKAMI ,  Kenichiro NISHIDA ,  Miyuki MASAKI ,  Masaru MORITA ,  Atsushi YOSHINOUCHI

IPC分类号： H01L21/66 ,  B23K26/06

CPC分类号： B23K26/0732 ,  B23K26/046 ,  B23K26/0665 ,  G02B27/0905 ,  G02B27/0966 ,  G02B27/48 ,  H01L21/02678

摘要： In laser annealing using a solid state laser, a focus position of a minor axial direction of a rectangular beam is easily corrected depending on positional variation of a laser irradiated portion of a semiconductor film. By using a minor-axis condenser lens 29 condensing incident light in a minor axial direction and a projection lens 30 projecting light, which comes from the minor-axis condenser lens 29, onto a surface of a semiconductor film 3, laser beam 1 is condensed on the surface of the semiconductor film 3 in the minor axial direction of a rectangular beam. The positional variation of a vertical direction of the semiconductor film 3 in a laser irradiated portion of the semiconductor film 3 is detected by a positional variation detector 31, and the minor-axis condenser lens 29 is moved in an optical axis direction based on a value of the detection.

摘要翻译： 在使用固态激光的激光退火中，根据半导体膜的激光照射部的位置变化容易校正矩形光束的小轴方向的聚焦位置。 通过使用将小轴聚光的次轴聚光透镜29和将来自短轴聚光透镜29的光投射到半导体膜3的表面上的投影透镜30，激光束1被冷凝 在半导体膜3的矩形梁的小轴向的表面上。 半导体膜3的激光照射部分中的半导体膜3的垂直方向的位置变化由位置变化检测器31检测，并且短轴聚光透镜29基于光轴方向在光轴方向上移动 的检测。

公开(公告)号：US20120168421A1

公开(公告)日：2012-07-05

申请号：US13418653

申请日：2012-03-13

申请人： Norihito KAWAGUCHI ,  Ryusuke KAWAKAMI ,  Kenichiro NISHIDA ,  Miyuki MASAKI ,  Masaru MORITA

发明人： Norihito KAWAGUCHI ,  Ryusuke KAWAKAMI ,  Kenichiro NISHIDA ,  Miyuki MASAKI ,  Masaru MORITA

IPC分类号： H05B7/18

CPC分类号： B23K26/0608 ,  B23K26/0676 ,  B23K26/0738 ,  B23K26/082 ,  H01L21/02532 ,  H01L21/02678 ,  H01L21/02686 ,  H01L21/02691 ,  H01L21/268

摘要： In the case of a lens array type homogenizer optical system, the incident angle and intensity of a laser beam 1 entering a large-sized lens (long-axis condenser lens 22) of a long-axis condensing optical system, which is provided on the rear side, are changed for every shot by performing laser irradiation while long-axis lens arrays 20a and 20b are reciprocated in a direction corresponding to a long axial direction of a linear beam (X-direction). Therefore, vertical stripes are significantly reduced. Further, the incident angle and intensity of a laser beam 1 entering a large-sized lens (projection lens 30) of a short-axis condensing optical system, which is provided on the rear side, are changed for every shot by performing laser irradiation while short-axis lens arrays 26a and 26b are reciprocated in a direction corresponding to a short axial direction of a linear beam (Y-direction). Therefore, horizontal stripes are significantly reduced.

摘要翻译： 在透镜阵列式均化器光学系统的情况下，入射到入射角度和强度的激光束1进入长轴聚光光学系统的大尺寸透镜（长轴聚光透镜22） 通过在长轴透镜阵列20a和20b沿与线性光束（X方向）的长轴方向对应的方向往复运动的同时通过执行激光照射而改变每一次的后侧。 因此，垂直条纹显着减少。 此外，通过进行激光照射来改变进入设置在后侧的短轴聚光光学系统的大尺寸透镜（投影透镜30）的激光束1的入射角度和强度， 短轴透镜阵列26a和26b在与线性光束（Y方向）的短轴方向对应的方向上往复运动。 因此，水平条纹显着减少。

公开(公告)号：US20120057613A1

公开(公告)日：2012-03-08

申请号：US13222427

申请日：2011-08-31

申请人： Kenichiro NISHIDA ,  Ryusuke KAWAKAMI ,  Norihito KAWAGUCHI ,  Miyuki MASAKI

发明人： Kenichiro NISHIDA ,  Ryusuke KAWAKAMI ,  Norihito KAWAGUCHI ,  Miyuki MASAKI

IPC分类号： H01S5/026

CPC分类号： B23K26/0738 ,  B23K26/0608 ,  B23K26/067 ,  B23K26/0732 ,  H01L21/02532 ,  H01L21/02678 ,  H01L21/02691 ,  H01L21/268 ,  H01L27/1285

摘要： The energy distribution in the short-side direction of a rectangular laser beam applied to an amorphous semiconductor film (amorphous silicon film) is uniformized. It is possible to the energy distribution in the short-side direction of the rectangular laser beam by the use of a cylindrical lens array 26 or a light guide 36 and concentrating optical systems 28 and 44 or by the use of an optical system including a diffracting optical element. Accordingly, since the effective energy range of a laser beam applied to the amorphous semiconductor film is widened and the transport speed of a substrate 3 can be enhanced as much, it is possible to improve the processing ability of the laser annealing.

摘要翻译： 施加到非晶半导体膜（非晶硅膜）的矩形激光束的短边方向上的能量分布均匀。 可以通过使用柱面透镜阵列26或光导36以及集中光学系统28和44或通过使用包括衍射的光学系统在矩形激光束的短边方向上的能量分布 光学元件。 因此，由于施加到非晶半导体膜的激光束的有效能量范围变宽，能够提高基板3的输送速度，所以能够提高激光退火的处理能力。

公开(公告)号：US20130005123A1

公开(公告)日：2013-01-03

申请号：US13608818

申请日：2012-09-10

申请人： Ryusuke KAWAKAMI ,  Kenichirou NISHIDA ,  Norihito KAWAGUCHI ,  Miyuki MASAKI ,  Atsushi YOSHINOUCHI

发明人： Ryusuke KAWAKAMI ,  Kenichirou NISHIDA ,  Norihito KAWAGUCHI ,  Miyuki MASAKI ,  Atsushi YOSHINOUCHI

IPC分类号： H01L21/268 ,  B23K26/00

CPC分类号： H01L21/02675 ,  B23K26/0613 ,  B23K26/0732 ,  H01L21/0268 ,  H01L21/02691 ,  H01L21/268 ,  H01L27/1285 ,  H01L27/1296

摘要： A laser annealing method for executing laser annealing by irradiating a semiconductor film formed on a surface of a substrate with a laser beam, the method including the steps of, generating a linearly polarized rectangular laser beam whose cross section perpendicular to an advancing direction is a rectangle with an electric field directed toward a long-side direction of the rectangle or an elliptically polarized rectangular laser beam having a major axis directed toward a long-side direction, causing the rectangular laser beam to be introduced to the surface of the substrate, and setting a wavelength of the rectangular laser beam to a length which is about a desired size of a crystal grain in a standing wave direction.

摘要翻译： 一种激光退火方法，用于通过用激光束照射形成在衬底的表面上的半导体膜来执行激光退火，所述方法包括以下步骤：产生线性偏振矩形激光束，其垂直于前进方向的截面为矩形 具有朝向矩形的长边方向的电场或具有指向长边方向的长轴的椭圆偏振矩形激光束，使矩形激光束被引入到基板的表面，并且设定 矩形激光束的波长长度大约为驻波方向的晶粒的期望尺寸。

公开(公告)号：US20110114855A1

公开(公告)日：2011-05-19

申请号：US12946051

申请日：2010-11-15

申请人： Ryusuke KAWAKAMI ,  Kenichirou NISHIDA ,  Norihito KAWAGUCHI ,  Miyuki MASAKI ,  Atsushi Yoshinouchi

发明人： Ryusuke KAWAKAMI ,  Kenichirou NISHIDA ,  Norihito KAWAGUCHI ,  Miyuki MASAKI ,  Atsushi Yoshinouchi

IPC分类号： B01J19/08

CPC分类号： H01L21/02675 ,  B23K26/0613 ,  B23K26/0732 ,  H01L21/0268 ,  H01L21/02691 ,  H01L21/268 ,  H01L27/1285 ,  H01L27/1296

摘要： A laser annealing method for executing laser annealing by irradiating a semiconductor film formed on a surface of a substrate with a laser beam, the method including the steps of, generating a linearly polarized rectangular laser beam whose cross section perpendicular to an advancing direction is a rectangle with an electric field directed toward a long-side direction of the rectangle or an elliptically polarized rectangular laser beam having a major axis directed toward a long-side direction, causing the rectangular laser beam to be introduced to the surface of the substrate, and setting a wavelength of the rectangular laser beam to a length which is about a desired size of a crystal grain in a standing wave direction.

摘要翻译： 一种激光退火方法，用于通过用激光束照射形成在衬底的表面上的半导体膜来执行激光退火，所述方法包括以下步骤：产生线性偏振矩形激光束，其垂直于前进方向的截面为矩形 具有朝向矩形的长边方向的电场或具有指向长边方向的长轴的椭圆偏振矩形激光束，使矩形激光束被引入到基板的表面，并且设定 矩形激光束的波长长度大约为驻波方向的晶粒的期望尺寸。

公开(公告)号：US20200091742A1

公开(公告)日：2020-03-19

申请号：US16509979

申请日：2019-07-12

申请人： Daichi YAMASHITA ,  Norihito KAWAGUCHI ,  Yoshihiro SATAKE ,  Nobuhito TANAKA ,  Koji KOSHIMIZU

发明人： Daichi YAMASHITA ,  Norihito KAWAGUCHI ,  Yoshihiro SATAKE ,  Nobuhito TANAKA ,  Koji KOSHIMIZU

IPC分类号： H02J7/00 ,  H02H7/18 ,  H02H1/00 ,  H01M10/44

摘要： A secondary battery protection circuit for a secondary battery includes: a reference voltage circuit configured to generate a reference voltage by using a depletion-type transistor and a transistor unit of enhancement type connected in series with the depletion-type transistor; a voltage divider configured to output a detection voltage obtained by dividing a power source voltage of the secondary battery; a detection circuit configured to detect an abnormal state of the secondary battery based on the reference voltage and the detection voltage; a first adjustment circuit configured to adjust a size ratio of the depletion-type transistor to the transistor unit based on threshold voltages of the depletion-type transistor and the transistor unit; and a second adjustment circuit configured to adjust the detection voltage based on the reference voltage after adjusting the size ratio.

公开(公告)号：US20160372954A1

公开(公告)日：2016-12-22

申请号：US14865167

申请日：2015-09-25

申请人： Ryota KAGEYAMA ,  Tsutomu YAMAUCHI ,  Norihito KAWAGUCHI ,  Nobuhito TANAKA ,  Takashi TAKEDA ,  Yoshihiro SATAKE ,  Takeshi YAMAGUCHI ,  Koji KOSHIMIZU

发明人： Ryota KAGEYAMA ,  Tsutomu YAMAUCHI ,  Norihito KAWAGUCHI ,  Nobuhito TANAKA ,  Takashi TAKEDA ,  Yoshihiro SATAKE ,  Takeshi YAMAGUCHI ,  Koji KOSHIMIZU

IPC分类号： H02J7/00

CPC分类号： H02J7/0029 ,  H02J2007/0037 ,  H02J2007/0039 ,  H02J2007/004

摘要： There is provided a method of correcting an overcurrent detection voltage of a battery protection integrated circuit including a current path between a first terminal and a second terminal, one or more transistors for controlling current of a secondary battery, an overcurrent detection circuit and a control circuit. The method comprises the steps of: measuring a resistance value between the first terminal and the second terminal wherein the one or more transistors are turned on at a predetermined temperature; estimating resistance values between the first terminal and the second terminal at respective temperatures based on the measured resistance value; calculating adjusting data for canceling temperature dependency of charge or discharge current of the secondary battery based on the measured resistance value and the estimated resistance values, wherein a value of the charge or discharge current varies depending on temperature; correcting the overcurrent detection voltage based on the calculated adjusting data.

摘要翻译： 提供一种校正包括第一端子和第二端子之间的电流路径的电池保护集成电路的过电流检测电压的方法，用于控制二次电池的电流的一个或多个晶体管，过电流检测电路和控制电路 。 该方法包括以下步骤：测量第一端子和第二端子之间的电阻值，其中一个或多个晶体管在预定温度下导通; 基于所测量的电阻值，在相应的温度下估计第一端子和第二端子之间的电阻值; 基于所测量的电阻值和所估计的电阻值计算用于消除二次电池的充电或放电电流的温度依赖性的调整数据，其中充电或放电电流的值根据温度而变化; 基于计算出的调整数据来校正过电流检测电压。

公开(公告)号：US20160372945A1

公开(公告)日：2016-12-22

申请号：US14953544

申请日：2015-11-30

申请人： Ryota KAGEYAMA ,  Tsutomu YAMAUCHI ,  Nobuhito TANAKA ,  Takashi TAKEDA ,  Yoshihiro SATAKE ,  Takeshi YAMAGUCHI ,  Koji KOSHIMIZU ,  Norihito KAWAGUCHI

发明人： Ryota KAGEYAMA ,  Tsutomu YAMAUCHI ,  Nobuhito TANAKA ,  Takashi TAKEDA ,  Yoshihiro SATAKE ,  Takeshi YAMAGUCHI ,  Koji KOSHIMIZU ,  Norihito KAWAGUCHI

IPC分类号： H02J7/00

CPC分类号： H02J7/0029 ,  H02J7/0016 ,  H02J7/0021 ,  H02J7/0026 ,  H02J7/0031 ,  H02J7/0073 ,  H02J2007/0037

摘要： A battery protection IC has detection circuits to detect faults of an overcharge, an over-discharge, and an overcurrent of a secondary battery; a control circuit to protect the secondary battery, by controlling (dis)charging the secondary battery upon the fault; and a delay circuit to generate delay after the fault before the controlling. The IC includes a memory unit to store data for setting and adjusting a circuit characteristic of the IC; and a setting circuit to set and adjust the circuit characteristic, based on the data from the memory unit. The memory unit includes a pair of non-volatile memory cells to complementarily store one bit, and a latch circuit directly cross-coupled with the memory cells, for each bit of the data. The latch circuit statically outputs the data from the memory cells to the setting circuit when the IC is turned on.

摘要翻译： 电池保护IC具有检测电路，用于检测二次电池的过充电，过放电和过电流的故障; 通过在故障时控制（dis）对二次电池充电来保护二次电池的控制电路; 以及在控制之前在故障之后产生延迟的延迟电路。 IC包括用于存储用于设置和调整IC的电路特性的数据的存储单元; 以及基于来自存储器单元的数据设置和调整电路特性的设置电路。 存储器单元包括一对互补地存储一个位的非易失性存储器单元，以及与存储器单元直接交叉耦合的锁存电路，用于数据的每一位。 当IC导通时，锁存电路将数据从存储单元静态输出到设定电路。

公开(公告)号：US20160359321A1

公开(公告)日：2016-12-08

申请号：US14857899

申请日：2015-09-18

申请人： Nobuhito TANAKA ,  Norihito KAWAGUCHI

发明人： Nobuhito TANAKA ,  Norihito KAWAGUCHI

IPC分类号： H02H9/02 ,  H01M2/34 ,  H01M10/0525 ,  H02J7/00

CPC分类号： H02H9/025 ,  H01M2/34 ,  H01M10/0525 ,  H01M10/425 ,  H01M2200/00 ,  H02H7/18 ,  H02J7/0031 ,  H05K1/02

摘要： A battery protection integrated circuit includes a switch unit; a control unit that controls on and off of the switch unit based on a monitored result; a package; a plurality of external connection terminals that are electrically connected to a plurality of terminal portions of the switch unit and the control unit, respectively, all of the external connection terminals that are to be connected to a first terminal of a circuit board being provided at a first short side of the terminal providing surface that faces one of board short sides of a circuit board, and all of the external connection terminals that are to be connected to a second terminal of the circuit board being provided at a second short side that is opposite to the first short side, when being mounted on the circuit board.

摘要翻译： 电池保护集成电路包括开关单元; 控制单元，其基于监视结果控制所述开关单元的接通和断开; 一套; 分别电连接到开关单元和控制单元的多个端子部分的多个外部连接端子，所有连接到电路板的第一端子的外部连接端子设置在 端子提供面的面对电路板的短边的第一短边，并且要连接到电路板的第二端的所有外部连接端子设置在相反的第二短边 到第一个短边，当安装在电路板上时。

公开(公告)号：US20110163076A1

公开(公告)日：2011-07-07

申请号：US12984389

申请日：2011-01-04

申请人： Norihito KAWAGUCHI

发明人： Norihito KAWAGUCHI

IPC分类号： B23K26/00

CPC分类号： H01L21/268 ,  H01L21/02538 ,  H01L21/02686

摘要： A compound semiconductor is placed in a reaction vessel (12) of which the inner gas is subjected to replacement with a low-vapor-pressure gas (2) whose equilibrium vapor pressure at the melting point of the compound semiconductor is 1 atm or lower. The low-vapor-pressure gas is urged to flow along the surface of the compound semiconductor while keeping the internal pressure of the reaction vessel at a value not lower than that equilibrium vapor pressure. The surface of the compound semiconductor is irradiated with a pulsed-laser light (3) whose photon energy is higher than the band gap of the compound semiconductor. Thus, only that part of the compound semiconductor which is located at the pulsed-laser light irradiation position is instantly heated and melted while keeping the atmospheric temperature of the low-vapor-pressure gas at a room temperature or a temperature equal to or lower than the decomposition temperature.

摘要翻译： 化合物半导体放置在反应容器（12）中，其内部气体用化合物半导体的熔点的平衡蒸气压为1atm以下的低蒸汽压气体（2）进行置换。 促使低蒸气压气体沿着化合物半导体的表面流动，同时将反应容器的内部压力保持在不低于该平衡蒸汽压力的值。 用光子能量高于化合物半导体的带隙的脉冲激光（3）照射化合物半导体的表面。 因此，仅将位于脉冲激光照射位置的化合物半导体的那部分即时加热熔融，同时保持低气压气体的大气温度为室温或等于或低于 分解温度。