公开(公告)号：US20100022102A1

公开(公告)日：2010-01-28

申请号：US11916687

申请日：2006-09-12

申请人： Ryusuke Kawakami ,  Kenichirou Nishida ,  Norihito Kawaguchi ,  Miyuki Masaki ,  Atsushi Yoshinouchi

发明人： Ryusuke Kawakami ,  Kenichirou Nishida ,  Norihito Kawaguchi ,  Miyuki Masaki ,  Atsushi Yoshinouchi

IPC分类号： H01L21/268 ,  H01L21/64

CPC分类号： H01L21/02675 ,  B23K26/0613 ,  B23K26/0732 ,  H01L21/0268 ,  H01L21/02691 ,  H01L21/268 ,  H01L27/1285 ,  H01L27/1296

摘要： A laser annealing method for executing laser annealing by irradiating a semiconductor film formed on a surface of a substrate with a laser beam, the method including the steps of, generating a linearly polarized rectangular laser beam whose cross section perpendicular to an advancing direction is a rectangle with an electric field directed toward a long-side direction of the rectangle or an elliptically polarized rectangular laser beam having a major axis directed toward a long-side direction, causing the rectangular laser beam to be introduced to the surface of the substrate, and setting a wavelength of the rectangular laser beam to a length which is about a desired size of a crystal grain in a standing wave direction.

摘要翻译： 一种激光退火方法，用于通过用激光束照射形成在衬底的表面上的半导体膜来执行激光退火，所述方法包括以下步骤：产生线性偏振矩形激光束，其垂直于前进方向的截面为矩形 具有朝向矩形的长边方向的电场或具有指向长边方向的长轴的椭圆偏振矩形激光束，使矩形激光束被引入到基板的表面，并且设定 矩形激光束的波长长度大约为驻波方向的晶粒的期望尺寸。

公开(公告)号：US08629522B2

公开(公告)日：2014-01-14

申请号：US13608818

申请日：2012-09-10

申请人： Ryusuke Kawakami ,  Kenichirou Nishida ,  Norihito Kawaguchi ,  Miyuki Masaki ,  Atsushi Yoshinouchi

发明人： Ryusuke Kawakami ,  Kenichirou Nishida ,  Norihito Kawaguchi ,  Miyuki Masaki ,  Atsushi Yoshinouchi

IPC分类号： H01L27/14 ,  H01L31/00

CPC分类号： H01L21/02675 ,  B23K26/0613 ,  B23K26/0732 ,  H01L21/0268 ,  H01L21/02691 ,  H01L21/268 ,  H01L27/1285 ,  H01L27/1296

摘要： A laser annealing method for executing laser annealing by irradiating a semiconductor film formed on a surface of a substrate with a laser beam, the method including the steps of, generating a linearly polarized rectangular laser beam whose cross section perpendicular to an advancing direction is a rectangle with an electric field directed toward a long-side direction of the rectangle or an elliptically polarized rectangular laser beam having a major axis directed toward a long-side direction, causing the rectangular laser beam to be introduced to the surface of the substrate, and setting a wavelength of the rectangular laser beam to a length which is about a desired size of a crystal grain in a standing wave direction.

摘要翻译： 一种激光退火方法，用于通过用激光束照射形成在衬底的表面上的半导体膜来执行激光退火，所述方法包括以下步骤：产生线性偏振矩形激光束，其垂直于前进方向的截面为矩形 具有朝向矩形的长边方向的电场或具有指向长边方向的长轴的椭圆偏振矩形激光束，使矩形激光束被引入到基板的表面，并且设定 矩形激光束的波长长度大约为驻波方向的晶粒的期望尺寸。

公开(公告)号：US07833871B2

公开(公告)日：2010-11-16

申请号：US11916687

申请日：2006-09-12

申请人： Ryusuke Kawakami ,  Kenichirou Nishida ,  Norihito Kawaguchi ,  Miyuki Masaki ,  Atsushi Yoshinouchi

发明人： Ryusuke Kawakami ,  Kenichirou Nishida ,  Norihito Kawaguchi ,  Miyuki Masaki ,  Atsushi Yoshinouchi

IPC分类号： H01L21/331 ,  H01L21/8222

CPC分类号： H01L21/02675 ,  B23K26/0613 ,  B23K26/0732 ,  H01L21/0268 ,  H01L21/02691 ,  H01L21/268 ,  H01L27/1285 ,  H01L27/1296

摘要： A laser annealing method for executing laser annealing by irradiating a semiconductor film formed on a surface of a substrate with a laser beam, the method including the steps of, generating a linearly polarized rectangular laser beam whose cross section perpendicular to an advancing direction is a rectangle with an electric field directed toward a long-side direction of the rectangle or an elliptically polarized rectangular laser beam having a major axis directed toward a long-side direction, causing the rectangular laser beam to be introduced to the surface of the substrate, and setting a wavelength of the rectangular laser beam to a length which is about a desired size of a crystal grain in a standing wave direction.

摘要翻译： 一种激光退火方法，用于通过用激光束照射形成在衬底的表面上的半导体膜来执行激光退火，所述方法包括以下步骤：产生线性偏振矩形激光束，其垂直于前进方向的截面为矩形 具有朝向矩形的长边方向的电场或具有指向长边方向的长轴的椭圆偏振矩形激光束，使矩形激光束被引入到基板的表面，并且设定 矩形激光束的波长长度大约为驻波方向的晶粒的期望尺寸。

公开(公告)号：US08299553B2

公开(公告)日：2012-10-30

申请号：US12946051

申请日：2010-11-15

申请人： Ryusuke Kawakami ,  Kenichirou Nishida ,  Norihito Kawaguchi ,  Miyuki Masaki ,  Atsushi Yoshinouchi

发明人： Ryusuke Kawakami ,  Kenichirou Nishida ,  Norihito Kawaguchi ,  Miyuki Masaki ,  Atsushi Yoshinouchi

IPC分类号： H01L27/14 ,  H01L31/00

CPC分类号： H01L21/02675 ,  B23K26/0613 ,  B23K26/0732 ,  H01L21/0268 ,  H01L21/02691 ,  H01L21/268 ,  H01L27/1285 ,  H01L27/1296

摘要： A laser annealing method for executing laser annealing by irradiating a semiconductor film formed on a surface of a substrate with a laser beam, the method including the steps of, generating a linearly polarized rectangular laser beam whose cross section perpendicular to an advancing direction is a rectangle with an electric field directed toward a long-side direction of the rectangle or an elliptically polarized rectangular laser beam having a major axis directed toward a long-side direction, causing the rectangular laser beam to be introduced to the surface of the substrate, and setting a wavelength of the rectangular laser beam to a length which is about a desired size of a crystal grain in a standing wave direction.

摘要翻译： 一种激光退火方法，用于通过用激光束照射形成在衬底的表面上的半导体膜来执行激光退火，所述方法包括以下步骤：产生线性偏振矩形激光束，其垂直于前进方向的截面为矩形 具有朝向矩形的长边方向的电场或具有指向长边方向的长轴的椭圆偏振矩形激光束，使矩形激光束被引入到基板的表面，并且设定 矩形激光束的波长长度大约为驻波方向的晶粒的期望尺寸。

公开(公告)号：US20110114855A1

公开(公告)日：2011-05-19

申请号：US12946051

申请日：2010-11-15

申请人： Ryusuke KAWAKAMI ,  Kenichirou NISHIDA ,  Norihito KAWAGUCHI ,  Miyuki MASAKI ,  Atsushi Yoshinouchi

发明人： Ryusuke KAWAKAMI ,  Kenichirou NISHIDA ,  Norihito KAWAGUCHI ,  Miyuki MASAKI ,  Atsushi Yoshinouchi

IPC分类号： B01J19/08

CPC分类号： H01L21/02675 ,  B23K26/0613 ,  B23K26/0732 ,  H01L21/0268 ,  H01L21/02691 ,  H01L21/268 ,  H01L27/1285 ,  H01L27/1296

摘要： A laser annealing method for executing laser annealing by irradiating a semiconductor film formed on a surface of a substrate with a laser beam, the method including the steps of, generating a linearly polarized rectangular laser beam whose cross section perpendicular to an advancing direction is a rectangle with an electric field directed toward a long-side direction of the rectangle or an elliptically polarized rectangular laser beam having a major axis directed toward a long-side direction, causing the rectangular laser beam to be introduced to the surface of the substrate, and setting a wavelength of the rectangular laser beam to a length which is about a desired size of a crystal grain in a standing wave direction.

摘要翻译： 一种激光退火方法，用于通过用激光束照射形成在衬底的表面上的半导体膜来执行激光退火，所述方法包括以下步骤：产生线性偏振矩形激光束，其垂直于前进方向的截面为矩形 具有朝向矩形的长边方向的电场或具有指向长边方向的长轴的椭圆偏振矩形激光束，使矩形激光束被引入到基板的表面，并且设定 矩形激光束的波长长度大约为驻波方向的晶粒的期望尺寸。

公开(公告)号：US08115137B2

公开(公告)日：2012-02-14

申请号：US12997543

申请日：2008-06-12

申请人： Norihito Kawaguchi ,  Ryusuke Kawakami ,  Kenichiro Nishida ,  Miyuki Masaki ,  Masaru Morita ,  Atsushi Yoshinouchi

发明人： Norihito Kawaguchi ,  Ryusuke Kawakami ,  Kenichiro Nishida ,  Miyuki Masaki ,  Masaru Morita ,  Atsushi Yoshinouchi

IPC分类号： H01L21/00 ,  H01L21/20 ,  H01L21/36

CPC分类号： B23K26/0732 ,  B23K26/046 ,  B23K26/0665 ,  G02B27/0905 ,  G02B27/0966 ,  G02B27/48 ,  H01L21/02678

摘要： In laser annealing using a solid state laser, a focus position of a minor axial direction of a rectangular beam is easily corrected depending on positional variation of a laser irradiated portion of a semiconductor film. By using a minor-axis condenser lens 29 condensing incident light in a minor axial direction and a projection lens 30 projecting light, which comes from the minor-axis condenser lens 29, onto a surface of a semiconductor film 3, laser beam 1 is condensed on the surface of the semiconductor film 3 in the minor axial direction of a rectangular beam. The positional variation of a vertical direction of the semiconductor film 3 in a laser irradiated portion of the semiconductor film 3 is detected by a positional variation detector 31, and the minor-axis condenser lens 29 is moved in an optical axis direction based on a value of the detection.

摘要翻译： 在使用固态激光的激光退火中，根据半导体膜的激光照射部的位置变化容易校正矩形光束的小轴方向的聚焦位置。 通过使用将小轴聚光的次轴聚光透镜29和将来自短轴聚光透镜29的光投射到半导体膜3的表面上的投影透镜30，激光束1被冷凝 在半导体膜3的矩形梁的小轴向的表面上。 半导体膜3的激光照射部分中的半导体膜3的垂直方向的位置变化由位置变化检测器31检测，并且短轴聚光透镜29基于光轴方向在光轴方向上移动 的检测。

公开(公告)号：US06890839B2

公开(公告)日：2005-05-10

申请号：US10257460

申请日：2002-01-15

申请人： Norihito Kawaguchi ,  Kenichiro Nishida ,  Mikito Ishii ,  Takehito Yagi ,  Miyuki Masaki ,  Atsushi Yoshinouchi ,  Koichiro Tanaka

发明人： Norihito Kawaguchi ,  Kenichiro Nishida ,  Mikito Ishii ,  Takehito Yagi ,  Miyuki Masaki ,  Atsushi Yoshinouchi ,  Koichiro Tanaka

IPC分类号： A61B18/20 ,  B23K26/06 ,  B23K26/073 ,  H01L21/268 ,  H01S3/00 ,  H01L21/00 ,  H01L21/20 ,  H01L21/26 ,  H01L21/331

CPC分类号： H01S3/005 ,  B23K26/0732

摘要： An object of the present invention is to provide a laser annealing method and apparatus capable of performing uniform beam emission. By means of the present invention, uniform beam application to a sample can be achieved because a linear cross-sectional configuration can be created in an optical system with a beam having a Gaussian distribution while areas of strong light intensity are avoided by rotating the beam from a laser light source at a prescribed angle by means of rotating means even when the beam pattern of the beam from the laser light source has a non-uniform intensity distribution.

摘要翻译： 本发明的一个目的是提供能够执行均匀的束发射的激光退火方法和装置。 通过本发明，可以实现对样品的均匀波束施加，因为可以在具有高斯分布的光束的光学系统中产生线性横截面配置，而通过将光束从 即使当来自激光光源的光束的光束图案具有不均匀的强度分布时，通过旋转装置以规定角度的激光光源。

公开(公告)号：US06621636B2

公开(公告)日：2003-09-16

申请号：US10026340

申请日：2001-12-21

申请人： Koichiro Tanaka ,  Setsuo Nakajima ,  Takehito Yagi ,  Mikito Ishii ,  Kenichiro Nishida ,  Norihito Kawaguchi ,  Miyuki Masaki ,  Atsushi Yoshinouchi

发明人： Koichiro Tanaka ,  Setsuo Nakajima ,  Takehito Yagi ,  Mikito Ishii ,  Kenichiro Nishida ,  Norihito Kawaguchi ,  Miyuki Masaki ,  Atsushi Yoshinouchi

IPC分类号： G02B2710

CPC分类号： G02B27/108 ,  G02B27/145

摘要： A laser irradiation apparatus having a low running cost compared to the conventional, and a laser irradiation method using the laser irradiation apparatus, are provided. Crystal grains having a size in the same order as, or greater than, conventional grains are formed. The cooling speed of a semiconductor film is made slower, and it becomes possible to form crystal grains having a grain size in the same order as, or greater than, the size of grains formed in the case of irradiating laser light having a long output time to the semiconductor film. This is achieved by delaying one laser light with respect to another laser light, combining the laser lights, and performing irradiation to the semiconductor film in the case of irradiating laser light using a solid state laser as a light source, which has a short output time.

公开(公告)号：US6130455A

公开(公告)日：2000-10-10

申请号：US825672

申请日：1997-03-20

申请人： Atsushi Yoshinouchi ,  Yasuaki Murata

发明人： Atsushi Yoshinouchi ,  Yasuaki Murata

IPC分类号： G02F1/136 ,  G02F1/1368 ,  H01L21/20 ,  H01L21/336 ,  H01L29/786 ,  H01C29/78

CPC分类号： H01L29/66757 ,  H01L21/2022

摘要： A semiconductor device includes: a substrate; a line formed on the substrate; and a crystalline semiconductor film containing silicon connected to the line. The crystalline semiconductor film is crystallized by annealing where a constituting material of the line functions as a catalyst.

摘要翻译： 半导体器件包括：衬底; 形成在基板上的线; 以及含有与该线连接的硅的结晶半导体膜。 结晶半导体膜通过退火结晶，其中线的构成材料用作催化剂。

公开(公告)号：US5403756A

公开(公告)日：1995-04-04

申请号：US158592

申请日：1993-11-24

申请人： Atsushi Yoshinouchi ,  Tatsuo Morita ,  Shuhei Tsuchimoto ,  Yasuaki Murata

发明人： Atsushi Yoshinouchi ,  Tatsuo Morita ,  Shuhei Tsuchimoto ,  Yasuaki Murata

IPC分类号： H01L21/30 ,  H01L21/3215 ,  H01L21/336 ,  H01L21/266

CPC分类号： H01L29/66757 ,  H01L21/3003 ,  H01L21/32155

摘要： A method for producing a polycrystalline semiconductor film is disclosed. The method includes the steps of: forming a semiconductor film on a substrate; forming a passivation film on the semiconductor film; exciting a mixed gas including hydrogen and at least one element selected from the group consisting of the III, IV, and V groups of the periodic table to generate hydrogen ions and ions of the at least one element; and implanting the hydrogen ions into the semiconductor film through the passivation film and simultaneously implanting the ions of the at least one element into the semiconductor film through the passivation film, thereby changing the semiconductor film into a polycrystalline semiconductor film having the at least one element.

摘要翻译： 公开了一种多晶半导体膜的制造方法。 该方法包括以下步骤：在衬底上形成半导体膜; 在半导体膜上形成钝化膜; 激发包括氢和选自周期表的III，IV和V族的至少一种元素的混合气体，以产生至少一种元素的氢离子和离子; 以及通过钝化膜将氢离子注入到半导体膜中，同时通过钝化膜将至少一种元素的离子注入到半导体膜中，从而将半导体膜改变成具有至少一种元素的多晶半导体膜。