公开(公告)号：US20170358449A1

公开(公告)日：2017-12-14

申请号：US15466330

申请日：2017-03-22

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Byung Soo So ,  Mee Jae Kang ,  Ho Seok Lee ,  Jae Gyun Lim ,  Sang Ho Jeon ,  Yeon Hee Jeon

IPC: H01L21/02 ,  H01L21/67 ,  H01S3/03 ,  H01S3/0971 ,  H01S3/225 ,  H01S3/00 ,  H01L27/12 ,  H01S3/038

CPC classification number: H01L21/02675 ,  H01L21/67115 ,  H01L27/1274 ,  H01S3/005 ,  H01S3/03 ,  H01S3/0346 ,  H01S3/038 ,  H01S3/0407 ,  H01S3/041 ,  H01S3/0971 ,  H01S3/225

Abstract: A laser crystallization method includes exciting gas medium in an airtight container to generate laser beams; amplifying the laser beams by reflecting the laser beams between a high reflection mirror and a low reflection mirror respectively disposed facing opposite end portions of the airtight container, wherein a first transparent window and a second transparent window are fixed to respective end portions of the airtight container, and outputting the amplified laser beams; and disposing a cleaning mirror in a path of the laser beams that have propagated through the second transparent window.

公开(公告)号：US11087980B2

公开(公告)日：2021-08-10

申请号：US15466330

申请日：2017-03-22

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Byung Soo So ,  Mee Jae Kang ,  Ho Seok Lee ,  Jae Gyun Lim ,  Sang Ho Jeon ,  Yeon Hee Jeon

IPC: H01L21/02 ,  H01S3/034 ,  H01L21/67 ,  H01L27/12 ,  H01S3/00 ,  H01S3/03 ,  H01S3/038 ,  H01S3/0971 ,  H01S3/225 ,  H01S3/04 ,  H01S3/041

Abstract: A laser crystallization method includes exciting gas medium in an airtight container to generate laser beams; amplifying the laser beams by reflecting the laser beams between a high reflection mirror and a low reflection mirror respectively disposed facing opposite end portions of the airtight container, wherein a first transparent window and a second transparent window are fixed to respective end portions of the airtight container, and outputting the amplified laser beams; and disposing a cleaning mirror in a path of the laser beams that have propagated through the second transparent window.

公开(公告)号：US11942481B2

公开(公告)日：2024-03-26

申请号：US17510995

申请日：2021-10-26

Applicant: Samsung Display Co., LTD.

Inventor： Dong-Sung Lee ,  Jongoh Seo ,  Byung Soo So ,  Dong-min Lee ,  Yeon Hee Jeon ,  Jonghoon Choi

IPC: H01L21/00 ,  H01L21/02 ,  H01L27/12 ,  H01L29/04 ,  H01L29/786

CPC classification number: H01L27/1222 ,  H01L21/02592 ,  H01L21/02675 ,  H01L27/1274 ,  H01L29/045 ,  H01L29/78675

Abstract: A display device may include a thin film transistor disposed on a substrate, and a display element electrically connected to the thin film transistor. The thin film transistor may include an active pattern including polycrystalline silicon, a gate insulation layer disposed on the active pattern, and a gate electrode disposed on the gate insulation layer. An average value of grain sizes of the active pattern may be in a range of about 400 nm to about 800 nm. An RMS value of a surface roughness of the active pattern may be about 4 nm or less. A method of manufacturing a polycrystalline silicon layer may include cleaning an amorphous silicon layer with hydrofluoric acid, rinsing the amorphous silicon layer with hydrogenated deionized water, and irradiating the amorphous silicon layer with a laser beam having an energy density of about 440 mJ/cm2 to about 490 mJ/cm2.

公开(公告)号：US11183515B2

公开(公告)日：2021-11-23

申请号：US16821484

申请日：2020-03-17

Applicant: Samsung Display Co., LTD.

Inventor： Dong-Sung Lee ,  Jongoh Seo ,  Byung Soo So ,  Dong-min Lee ,  Yeon Hee Jeon ,  Jonghoon Choi

IPC: H01L21/00 ,  H01L27/12 ,  H01L29/786 ,  H01L21/02 ,  H01L29/04

Abstract: A display device may include a thin film transistor disposed on a substrate, and a display element electrically connected to the thin film transistor. The thin film transistor may include an active pattern including polycrystalline silicon, a gate insulation layer disposed on the active pattern, and a gate electrode disposed on the gate insulation layer. An average value of grain sizes of the active pattern may be in a range of about 400 nm to about 800 nm. An RMS value of a surface roughness of the active pattern may be about 4 nm or less. A method of manufacturing a polycrystalline silicon layer may include cleaning an amorphous silicon layer with hydrofluoric acid, rinsing the amorphous silicon layer with hydrogenated deionized water, and irradiating the amorphous silicon layer with a laser beam having an energy density of about 440 mJ/cm2 to about 490 mJ/cm2.