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公开(公告)号:US11521801B2
公开(公告)日:2022-12-06
申请号:US16877913
申请日:2020-05-19
Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.
Inventor: Jin Ho Hong , Youn Soo Kim , Oh Choon Kwon , Hyun Sub Oh
Abstract: A solid electrolyte capacitor includes a sintered body formed by sintering a molded body containing metal powder; and a conductive polymer layer disposed above the sintered body. A ratio (t2/t1) of a thickness (t2) of the conductive polymer layer in an edge portion of the sintered body to a thickness (t1) of the conductive polymer layer in a central portion of the sintered body satisfies 0.35≤t2/t1≤0.9.
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公开(公告)号:US20210166886A1
公开(公告)日:2021-06-03
申请号:US16877913
申请日:2020-05-19
Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.
Inventor: Jin Ho Hong , Youn Soo Kim , Oh Choon Kwon , Hyun Sub Oh
Abstract: A solid electrolyte capacitor includes a sintered body formed by sintering a molded body containing metal powder; and a conductive polymer layer disposed above the sintered body. A ratio (t2/t1) of a thickness (t2) of the conductive polymer layer in an edge portion of the sintered body to a thickness (t1) of the conductive polymer layer in a central portion of the sintered body satisfies 0.35≤t2/t1≤0.9.
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3.
公开(公告)号:US10008340B2
公开(公告)日:2018-06-26
申请号:US14732667
申请日:2015-06-05
Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.
Inventor: Young Ghyu Ahn , Byoung Hwa Lee , Sang Soo Park , Oh Choon Kwon , Hong Kyu Shin , Hyun Sub Oh , Jae Hyuk Choi
IPC: H01G15/00 , H01G4/38 , H01G4/30 , H01G9/15 , H01G9/012 , H02M1/08 , H01G4/40 , H01G9/28 , H01G2/10 , H01G4/232 , H01G4/12 , H01G9/042 , H02M3/335 , H05K1/18
CPC classification number: H01G15/00 , H01G2/106 , H01G4/12 , H01G4/232 , H01G4/30 , H01G4/38 , H01G4/40 , H01G9/012 , H01G9/042 , H01G9/15 , H01G9/28 , H02M1/08 , H02M3/33507 , H05K1/181 , H05K2201/10015 , Y02B70/1433
Abstract: A composite electronic component includes a composite body formed by combining a multilayer ceramic capacitor (MLCC) and a tantalum capacitor. The composite electronic component has an excellent acoustic noise reduction effect, low equivalent series resistance (ESR)/equivalent series inductance (ESL), enhanced DC-bias characteristics, and a reduced chip thickness.
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