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公开(公告)号：US20240243554A1
公开(公告)日：2024-07-18
申请号：US18376661
申请日：2023-10-04
发明人： Eunsung LEE , Junhee Choi , Kiho Kong , Joohun Han
CPC分类号： H01S5/323 , H01S5/0282 , H01S5/4087
摘要： Provided is a light source including a plurality of support layers spaced apart from each other, an ionic crystalline layer on each of the plurality of support layers, a two-dimensional (2D) material layer on the ionic crystalline layer, and a light-emitting device including a first clad layer on the 2D material layer, a width of the first clad layer being greater than a width of the 2D material layer in a horizontal direction, an active layer on the first clad layer, and a second clad layer on the active layer and doped as a second conductive type electrically opposite to a first conductive type.
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2.发明公开公开(公告)号：US20240113264A1
公开(公告)日：2024-04-04
申请号：US18375194
申请日：2023-09-29
发明人： Junhee Choi , Kiho Kong , Joosung Kim , Eunsung Lee , Joohun Han
CPC分类号： H01L33/502 , H01L25/167 , H01L2933/0041
摘要： A light emitting device includes a light emitting rod in which a porous first type semiconductor layer, an active layer, and a second type semiconductor layer are sequentially arranged, and a wavelength conversion cluster is embedded in the porous first type semiconductor layer and configured to convert a first light generated in the active layer into a second light having a different wavelength.
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公开(公告)号：US11923400B2
公开(公告)日：2024-03-05
申请号：US17744211
申请日：2022-05-13
发明人： Kiho Kong , Junhee Choi
IPC分类号： H01L27/14 , H01L27/12 , H01L27/15 , H01L33/36 , H01L33/62 , H01L49/02 , H01L33/06 , H01L33/32 , H01L33/44
CPC分类号： H01L27/156 , H01L27/124 , H01L27/1255 , H01L28/60 , H01L33/36 , H01L33/62 , H01L27/1222 , H01L27/127 , H01L33/06 , H01L33/32 , H01L33/44
摘要： A display apparatus includes a substrate, a light-emitting device provided on the substrate, a driving transistor device configured to control the light-emitting device, a first power supply line electrically connected to a source region of the driving transistor device, a conductive pattern electrically connected to a gate electrode of the driving transistor device, and a second power supply line electrically connected to the first power supply line, wherein the conductive pattern and the first power supply line constitute a first capacitor, and the conductive pattern and the second power supply line constitute a second capacitor, wherein the first capacitor and the second capacitor are connected in parallel.
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公开(公告)号：US11450710B2
公开(公告)日：2022-09-20
申请号：US17191619
申请日：2021-03-03
发明人： Kyungwook Hwang , Hoyoung Ahn , Junhee Choi , Kiho Kong , Joohun Han
摘要： A display device includes a substrate, an emissive layer; a plurality of color converting layers that share the emissive layer, a barrier arranged on the emissive layer between the plurality of color converting layers, a first insulating layer provided between the plurality of color converting layers and the emissive layer and a second insulating layer provided between the first insulating layer and the plurality of color converting layers. The barrier spatially separates the plurality of color converting layers from each other and the first insulating layer has a plurality of first openings respectively corresponding to the plurality of color converting layers.
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公开(公告)号：US11251331B2
公开(公告)日：2022-02-15
申请号：US16666593
申请日：2019-10-29
发明人： Kiho Kong , Junhee Choi , Deukseok Chung , Junsik Hwang
摘要： Provided are a method of manufacturing a display apparatus and the display apparatus. The method includes forming an emissive layer and a driving layer on a first area of a substrate, forming an exposure line electrically connected to the driving layer, on a second area of the substrate, and forming a color conversion layer on the driving layer by emitting light from the emissive layer using the exposure line.
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公开(公告)号：US10755622B2
公开(公告)日：2020-08-25
申请号：US15604826
申请日：2017-05-25
发明人： Kiho Kong , Hongkeun Yune
IPC分类号： G09G3/20
摘要： Disclosed is a display driver integrated circuit which includes a first booster that generates a first boosting voltage by boosting at least one of first and second power supply voltages, a second booster that generates the first boosting voltage or a second boosting voltage by boosting at least one of the first and second power supply voltages, a first regulator that generates a first output voltage based on at least one of the first boosting voltages generated by the first and second boosters, and a second regulator that generates a second output voltage based on the second boosting voltage.
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公开(公告)号：US12034032B2
公开(公告)日：2024-07-09
申请号：US18308895
申请日：2023-04-28
发明人： Joohun Han , Junhee Choi , Kiho Kong , Jinjoo Park , Nakhyun Kim , Junghun Park
CPC分类号： H01L27/156 , H01L33/0093 , H01L33/0095 , H01L33/007
摘要： A micro light emitting diode (LED) device and a method of manufacturing the same are provided. A micro LED device includes a light emitting layer that is provided on a support substrate, a bonding layer, and a driver layer. The light emitting layer includes a stacked structure including a first semiconductor layer, an active layer, and a second semiconductor layer; first and second electrodes provided on a first side and a second side of the stacked structure; and a plurality of light emitting regions. The bonding layer is positioned between the support substrate and the light emitting layer. The drive layer includes a drive element electrically connected to the light emitting layer and is positioned on the light emitting layer to apply power to the plurality of light emitting regions of the light emitting layer.
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公开(公告)号：US11776988B2
公开(公告)日：2023-10-03
申请号：US17227981
申请日：2021-04-12
发明人： Junhee Choi , Kiho Kong , Nakhyun Kim , Dongho Kim , Junghun Park , Jinjoo Park , Eunsung Lee , Joohun Han
IPC分类号： H01L27/15
CPC分类号： H01L27/156
摘要： A micro light-emitting display apparatus and a method of manufacturing the same are disclosed The micro light-emitting display apparatus includes a first semiconductor layer, an isolation structure provided on the first semiconductor layer and configured to define a plurality of sub-pixels each configured to emit light, a first light-emitting unit including a first active layer provided in a first sub-pixel among the plurality of sub-pixels, and a second semiconductor layer provided on the first active layer, and a second light-emitting unit including a rod semiconductor layer provided in a second sub-pixel among the plurality of sub-pixels, a second active layer provided on the rod semiconductor layer, and a third semiconductor layer provided on the second active layer. The first active layer is configured to emit blue light and the second active layer is configured to emit green light.
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9.发明申请公开(公告)号：US20220271210A1
公开(公告)日：2022-08-25
申请号：US17743028
申请日：2022-05-12
发明人： Kiho Kong , Junhee Choi , Jinjo Park , Joohun Han
摘要： A semiconductor device includes a substrate including a first region and a second region that are arranged in a first direction that is parallel to an upper surface of the substrate; a separation layer provided on the first region of the substrate; a high electron mobility transistor (HEMT) device overlapping the separation layer in a second direction that is perpendicular to the upper surface of the substrate; a light-emitting device provided on the second region of the substrate; and a first insulating pattern covering a side surface of the HEMT device, wherein the first insulating pattern overlaps the separation layer in the second direction.
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公开(公告)号：US20220109021A1
公开(公告)日：2022-04-07
申请号：US17207105
申请日：2021-03-19
发明人： Kiho Kong , Junhee Choi
摘要： A micro light emitting display apparatus and a method of manufacturing the micro light emitting display apparatus are disclosed. The micro light emitting display apparatus includes a micro light emitting element, a driving transistor connected to the micro light emitting element, a switching transistor connected to the driving transistor, and a first opening is provided to expose a source region or a drain region of the switching transistor, and a gate electrode of the driving transistor is provided in the first opening and in contact with the source region or the drain region of the switching transistor.
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