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1.发明申请公开(公告)号：US20170075055A1
公开(公告)日：2017-03-16
申请号：US15091064
申请日：2016-04-05
发明人： Kyuhwan CHOI , Byong Min KANG , Dong Kyung NAM , Eunsung LEE , Jinho LEE , Yoonsun CHOI
IPC分类号： F21V8/00
CPC分类号： G02B6/29304 , G02B6/005 , G02F1/1323 , G02F1/133512 , G02F2001/133567 , G02F2001/133626 , H04N13/31 , H04N13/317 , H04N13/32
摘要： An optical layer may include a barrier. The barrier may include slits arranged in the barrier so that vertically neighboring slits from among the slits are connected to each other. The slits are configured to transmit light through the barrier.
摘要翻译： 光学层可以包括屏障。 阻挡层可以包括布置在屏障中的狭缝，使得狭缝之间的垂直相邻狭缝彼此连接。 狭缝被配置为透过光线通过屏障。
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公开(公告)号：US20240266468A1
公开(公告)日：2024-08-08
申请号：US18408236
申请日：2024-01-09
发明人： Joohun HAN , Junhee CHOI , Kiho KONG , Joosung KIM , Hyochul KIM , Eunsung LEE
CPC分类号： H01L33/24 , H01L25/0753 , H01L33/0075 , H01L33/0095 , H01L33/10 , H01L33/22 , H01L33/32 , H01L33/44
摘要： Provided is a nanorod light-emitting device having improved luminous efficiency by reducing surface defects. The nanorod light-emitting device includes a semiconductor light-emitting structure having a nanorod shape, a surface activation layer provided on a sidewall of the semiconductor light-emitting structure, and an epitaxial passivation layer provided on the surface activation layer.
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公开(公告)号：US20220109022A1
公开(公告)日：2022-04-07
申请号：US17227981
申请日：2021-04-12
发明人： Junhee CHOI , Kiho KONG , Nakhyun KIM , Dongho KIM , Junghun PARK , Jinjoo PARK , Eunsung LEE , Joohun HAN
IPC分类号： H01L27/15
摘要： A micro light-emitting display apparatus and a method of manufacturing the same are disclosed The micro light-emitting display apparatus includes a first semiconductor layer, an isolation structure provided on the first semiconductor layer and configured to define a plurality of sub-pixels each configured to emit light, a first light-emitting unit including a first active layer provided in a first sub-pixel among the plurality of sub-pixels, and a second semiconductor layer provided on the first active layer, and a second light-emitting unit including a rod semiconductor layer provided in a second sub-pixel among the plurality of sub-pixels, a second active layer provided on the rod semiconductor layer, and a third semiconductor layer provided on the second active layer. The first active layer is configured to emit blue light and the second active layer is configured to emit green light.
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公开(公告)号：US20200347485A1
公开(公告)日：2020-11-05
申请号：US16776729
申请日：2020-01-30
发明人： Eunsung LEE , Duseop Yoon , Joungeun Yoo , Dohyang Kim
摘要： A quasicrystalline material and a semiconductor device to which the quasicrystalline material is applied are disclosed. A quasicrystalline material is based on a quasicrystalline element having one or more axis of symmetry (e.g., a 2-fold axis, a 3-fold axis, a 5-fold axis, or a higher fold axes of symmetry). The quasicrystalline material is capable of phase changes between a quasicrystalline phase and an approximant crystalline phase having a further regular atom arrangement than the quasicrystalline phase. The quasicrystalline material that may be used as a phase change material and may be applied to a phase change layer of a semiconductor device.
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公开(公告)号：US20240243554A1
公开(公告)日：2024-07-18
申请号：US18376661
申请日：2023-10-04
发明人： Eunsung LEE , Junhee Choi , Kiho Kong , Joohun Han
CPC分类号： H01S5/323 , H01S5/0282 , H01S5/4087
摘要： Provided is a light source including a plurality of support layers spaced apart from each other, an ionic crystalline layer on each of the plurality of support layers, a two-dimensional (2D) material layer on the ionic crystalline layer, and a light-emitting device including a first clad layer on the 2D material layer, a width of the first clad layer being greater than a width of the 2D material layer in a horizontal direction, an active layer on the first clad layer, and a second clad layer on the active layer and doped as a second conductive type electrically opposite to a first conductive type.
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6.发明公开公开(公告)号：US20230221552A1
公开(公告)日：2023-07-13
申请号：US17877402
申请日：2022-07-29
发明人： Kiho KONG , Junhee CHOI , Junghun PARK , Eunsung LEE
CPC分类号： G02B27/0101 , G02B27/0172 , H01L27/156 , G02B2027/0178
摘要： A display device includes: a plurality of light emitting elements including a first semiconductor layer, each of the plurality of light emitting elements including a second semiconductor layer provided under the first semiconductor layer and an active layer interposed between the first semiconductor layer; a plurality of partition walls extending from the first semiconductor layer; and a plurality of color conversion layers provided on the plurality of light emitting elements in correspondence with the plurality of light emitting elements and spaced apart from each other by the plurality of partition walls, each of the plurality of color conversion layers including a first color conversion layer and a second color conversion layer stacked on the first color conversion layer.
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公开(公告)号：US20230170440A1
公开(公告)日：2023-06-01
申请号：US17847806
申请日：2022-06-23
发明人： Junhee CHOI , Kiho KONG , Junghun PARK , Eunsung LEE , Nakhyun KIM , Joosung KIM , Younghwan PARK , Dongchul SHIN , Joohun HAN
CPC分类号： H01L33/382 , H01L33/502 , G06T19/006 , H01L33/62 , H01L33/005 , H01L2933/0016 , H01L2933/0041 , H01L2933/0066
摘要： Provided is a display apparatus including a first semiconductor layer having a first surface and a second surface opposite to each other, a plurality of partitions protruding from the first surface, and a plurality of opening areas between the plurality of partitions, a plurality of active layers provided opposite to the plurality of opening areas on the second surface of the first semiconductor layer, a plurality of second semiconductor layers respectively provided on the plurality of active layers opposite to the first semiconductor layer, a separation film provided between two adjacent active layers among the plurality of active layers and between two adjacent second semiconductor layers among the plurality of second semiconductor layers, and a plurality of color conversion layers provided in the plurality of opening areas on the first surface of the first semiconductor layer.
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8.发明申请公开(公告)号：US20220416120A1
公开(公告)日：2022-12-29
申请号：US17731829
申请日：2022-04-28
发明人： Joosung KIM , Younghwan PARK , Dongchul SHIN , Junhee CHOI , Nakhyun KIM , Junghun PARK , Eunsung LEE , Joohun HAN
摘要： A light emitting device may be a bar-type light emitting device and include a n-GaN semiconductor layer, a p-GaN semiconductor layer spaced apart from the n-GaN semiconductor layer, an active layer arranged between the n-GaN semiconductor layer and the p-GaN semiconductor layer, and a strain relaxing layer including indium clusters and voids.
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9.发明申请ULTRASONIC PROBE, ULTRASONIC IMAGING APPARATUS, AND METHOD FOR CONTROLLING THE SAME 审中-公开超声波探头，超声波成像装置及其控制方法公开(公告)号：US20160206288A1
公开(公告)日：2016-07-21
申请号：US14868606
申请日：2015-09-29
发明人： Minseog CHOI , Youngil KIM , Jong Keun SONG , Eunsung LEE
CPC分类号： A61B8/5207 , A61B8/4405 , A61B8/4444 , A61B8/5215 , A61B8/54 , A61B8/56
摘要： An ultrasonic probe includes an optical resonating waveguide configured to receive an echo ultrasound signal; a calculator configured to calculate an acoustic pressure of the echo ultrasound signal, based on a change in wavelength of an optical signal traveling within the optical resonating waveguide, the change occurring in response to the optical resonating waveguide receiving the echo ultrasound signal; and a converter configured to convert the echo ultrasound signal to an electric signal based on the acoustic pressure of the echo ultrasound signal.
摘要翻译： 超声波探头包括配置成接收回波超声信号的光谐振波导; 计算器，被配置为基于在所述光学谐振波导内行进的光信号的波长的变化来计算所述回波超声信号的声压，响应于接收所述回波超声信号的所述光学谐振波导发生的变化; 以及转换器，被配置为基于回波超声信号的声压将回波超声信号转换为电信号。
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公开(公告)号：US20150305713A1
公开(公告)日：2015-10-29
申请号：US14694489
申请日：2015-04-23
申请人： SAMSUNG ELECTRONICS CO., LTD. , Kyungpook National University Industry-Academic Cooperation Foundation
发明人： Youngil KIM , Jong Keun SONG , Baehyung KIM , Yongrae ROH , Eunsung LEE , Kyungil CHO , Minseog CHOI
IPC分类号： A61B8/00
CPC分类号： A61B8/4444 , A61B8/4405 , A61B8/4483 , B06B1/0215 , B06B1/0292 , B06B1/0629 , B06B1/085 , B06B2201/20 , G01S15/8915
摘要： An ultrasonic probe includes a capacitive micromachined ultrasonic transducer (cMUT) array configured to generate ultrasonic waves, an integrated circuit to which the cMUT array is bonded, and a flexible printed circuit board having one end connected to the integrated circuit to output signals to the integrated circuit, the integrated circuit including pads provided on the integrated circuit and an anisotropic conductive film (ACF) provided on the pads, and the one end of the flexible printed circuit board being connected to the ACF to thereby connect the flexible printed circuit board to the integrated circuit.
摘要翻译： 超声波探头包括被配置为产生超声波的电容微加工超声波换能器（cMUT）阵列，被连接有cMUT阵列的集成电路和柔性印刷电路板，其一端连接到集成电路，以将信号输出到集成电路 包括设置在集成电路上的焊盘和设置在焊盘上的各向异性导电膜（ACF）的集成电路，并且柔性印刷电路板的一端连接到ACF，从而将柔性印刷电路板连接到 集成电路。
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