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公开(公告)号：US12034032B2
公开(公告)日：2024-07-09
申请号：US18308895
申请日：2023-04-28
发明人： Joohun Han , Junhee Choi , Kiho Kong , Jinjoo Park , Nakhyun Kim , Junghun Park
CPC分类号： H01L27/156 , H01L33/0093 , H01L33/0095 , H01L33/007
摘要： A micro light emitting diode (LED) device and a method of manufacturing the same are provided. A micro LED device includes a light emitting layer that is provided on a support substrate, a bonding layer, and a driver layer. The light emitting layer includes a stacked structure including a first semiconductor layer, an active layer, and a second semiconductor layer; first and second electrodes provided on a first side and a second side of the stacked structure; and a plurality of light emitting regions. The bonding layer is positioned between the support substrate and the light emitting layer. The drive layer includes a drive element electrically connected to the light emitting layer and is positioned on the light emitting layer to apply power to the plurality of light emitting regions of the light emitting layer.
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公开(公告)号：US11776988B2
公开(公告)日：2023-10-03
申请号：US17227981
申请日：2021-04-12
发明人： Junhee Choi , Kiho Kong , Nakhyun Kim , Dongho Kim , Junghun Park , Jinjoo Park , Eunsung Lee , Joohun Han
IPC分类号： H01L27/15
CPC分类号： H01L27/156
摘要： A micro light-emitting display apparatus and a method of manufacturing the same are disclosed The micro light-emitting display apparatus includes a first semiconductor layer, an isolation structure provided on the first semiconductor layer and configured to define a plurality of sub-pixels each configured to emit light, a first light-emitting unit including a first active layer provided in a first sub-pixel among the plurality of sub-pixels, and a second semiconductor layer provided on the first active layer, and a second light-emitting unit including a rod semiconductor layer provided in a second sub-pixel among the plurality of sub-pixels, a second active layer provided on the rod semiconductor layer, and a third semiconductor layer provided on the second active layer. The first active layer is configured to emit blue light and the second active layer is configured to emit green light.
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公开(公告)号：US11688827B2
公开(公告)日：2023-06-27
申请号：US17106515
申请日：2020-11-30
发明人： Nakhyun Kim , Junhee Choi , Jinjoo Park , Joohun Han
CPC分类号： H01L33/24 , H01L25/0753 , H01L25/167 , H01L29/0676 , H01L33/32 , H01L33/44
摘要： A nanorod semiconductor layer having a flat upper surface, a micro-LED including the nanorod semiconductor layer, a pixel plate including the micro-LED, a display device including the pixel plate, and an electronic device including the pixel plate are provided. The nanorod semiconductor layer includes: a main body; and an upper end formed from the main body, wherein the upper end includes: a first inclined surface; a second inclined surface facing the first inclined surface; and a flat upper surface between the first inclined surface and the second inclined surface, and a width of the upper end becomes narrower in an upward direction, and when a length of the upper end protruded from the main body (a thickness of the upper end) is L1, an inclination angle between a surface extending parallel to a surface selected from the first and second inclined surfaces and the flat upper surface is β, and a width of the main body is D, a width D1 of the flat upper surface satisfies Equation 1.
D1=D−(2×L1×tan β)-
公开(公告)号：US20210399173A1
公开(公告)日：2021-12-23
申请号：US17112346
申请日：2020-12-04
发明人： Junhee CHOI , Nakhyun Kim , Jinjoo Park , Joohun Han
摘要： Provided is a nanorod light-emitting device including a first semiconductor layer doped with a first conductive type impurity, an emission layer disposed above the first semiconductor layer, a second semiconductor layer disposed above the emission layer and doped with a second conductive type impurity that is electrically opposite to the first conductive type impurity, a conductive layer disposed between at least one of a center portion of a lower surface of the emission layer and the first semiconductor layer and a center portion of an upper surface of the emission layer and the second semiconductor layer, and a current blocking layer surrounding a sidewall of the conductive layer.
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公开(公告)号：US12095005B2
公开(公告)日：2024-09-17
申请号：US18200399
申请日：2023-05-22
发明人： Nakhyun Kim , Junhee Choi , Jinjoo Park , Joohun Han
CPC分类号： H01L33/24 , H01L25/0753 , H01L25/167 , H01L29/0676 , H01L33/32 , H01L33/44
摘要： A nanorod semiconductor layer having a flat upper surface, a micro-LED including the nanorod semiconductor layer, a pixel plate including the micro-LED , a display device including the pixel plate, and an electronic device including the pixel plate are provided. The nanorod semiconductor layer includes: a main body; and an upper end formed from the main body, wherein the upper end includes: a first inclined surface; a second inclined surface facing the first inclined surface; and a flat upper surface between the first inclined surface and the second inclined surface, and a width of the upper end becomes narrower in an upward direction, and when a length of the upper end protruded from the main body (a thickness of the upper end) is L1, an inclination angle between a surface extending parallel to a surface selected from the first and second inclined surfaces and the flat upper surface is β, and a width of the main body is D, a width D1 of the flat upper surface satisfies Equation 1.
D1=D−(2×L1×tanβ)-
公开(公告)号：US11777056B2
公开(公告)日：2023-10-03
申请号：US17112346
申请日：2020-12-04
发明人： Junhee Choi , Nakhyun Kim , Jinjoo Park , Joohun Han
CPC分类号： H01L33/24 , H01L27/156 , H01L33/0025 , H01L33/0062 , H01L33/06 , H01L33/145 , H01L33/30 , H01L33/40
摘要： Provided is a nanorod light-emitting device including a first semiconductor layer doped with a first conductive type impurity, an emission layer disposed above the first semiconductor layer, a second semiconductor layer disposed above the emission layer and doped with a second conductive type impurity that is electrically opposite to the first conductive type impurity, a conductive layer disposed between at least one of a center portion of a lower surface of the emission layer and the first semiconductor layer and a center portion of an upper surface of the emission layer and the second semiconductor layer, and a current blocking layer surrounding a sidewall of the conductive layer.
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公开(公告)号：US11699775B2
公开(公告)日：2023-07-11
申请号：US17138071
申请日：2020-12-30
发明人： Junhee Choi , Nakhyun Kim , Jinjoo Park , Joohun Han
IPC分类号： H01L33/24 , H01L25/075 , H01L33/32 , H01L33/00
CPC分类号： H01L33/24 , H01L25/0753 , H01L33/32 , H01L33/0075
摘要： A semiconductor light emitting diode (LED) and a method of manufacturing the same are provided. The LED includes a first semiconductor layer; a plurality of active elements spaced apart on the first semiconductor layer and each having a width less than a width of the first semiconductor layer; and a second semiconductor layer disposed on the plurality of active elements.
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公开(公告)号：US11466876B2
公开(公告)日：2022-10-11
申请号：US17117649
申请日：2020-12-10
发明人： Juwan Park , Nakhyun Kim , Juyoung Kim , Changhyun Park , Moonsun Shin , Wonhee Lee , Hojin Lee , Changwoo Jung , Sunghyun Chun
摘要： Disclosed herein is a humidifier including an improved structure of a water collection tank. The humidifier includes a main body, a water supply tank provided in an upper portion of the main body, a humidifying fabric arranged in an inside of the main body and disposed below the water supply tank to receive water, a fan configured to move air through the humidifying fabric, a water collection tank configured to collect water from the humidifying fabric, a pump configured to pump water from the water collection tank to the water supply tank, and a humidifier lower cover coupleable to and decoupleable from a lower end of the main body. The water collection tank includes a water collection tank top cover provided in an upper portion of the water collection tank, and a water collection tank lower cover configured to be accessible through the lower end of the main body.
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公开(公告)号：US20220140183A1
公开(公告)日：2022-05-05
申请号：US17197326
申请日：2021-03-10
发明人： Joohun HAN , Junhee Choi , Nakhyun Kim , Dongho Kim , Jinjoo Park
摘要： A nanorod light emitting device, a method of manufacturing the same, and a display apparatus including the nanorod light emitting device are provided. The nanorod light emitting device includes a first semiconductor layer doped with a first conductivity type, a light emitting layer disposed on the first semiconductor layer, and a second semiconductor layer disposed on the light emitting layer and doped with a second conductivity type that is electrically opposite to the first conductivity type, wherein a distance between a lower surface of the first semiconductor layer and an upper surface of the second semiconductor layer is in a range of about 2 μm to about 10 μm, wherein a difference between a diameter of the upper surface of the second semiconductor layer and the lower surface of the first semiconductor layer is 10% or less of a diameter of the upper surface of the second semiconductor layer.
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公开(公告)号：US12100340B2
公开(公告)日：2024-09-24
申请号：US18233148
申请日：2023-08-11
发明人： Junhee Choi , Kiho Kong , Nakhyun Kim , Junghun Park , Jinjoo Park , Joohun Han
CPC分类号： G09G3/32 , H01L27/156 , H01L33/10 , H01L33/346 , G09G2300/0452
摘要： Provided is a display apparatus including a plurality of subpixels and configured to emit light based on each of the plurality of subpixels, the display apparatus including a substrate, a driving layer provided on the substrate and including a driving element which is configured to apply current to the display apparatus, a first electrode electrically connected to the driving layer, a first semiconductor layer provided on the first electrode, an active layer provided on the first semiconductor layer, a second semiconductor layer provided on the active layer, a second electrode provided on the second semiconductor layer, and a reflective layer provided on the second semiconductor layer, wherein light emitted from the active layer resonates between the first electrode and the reflective layer.
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