公开(公告)号：US20170139514A1

公开(公告)日：2017-05-18

申请号：US15351788

申请日：2016-11-15

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： Mi Jeong KIM ,  Chan KWAK ,  Junghwa KIM ,  Dong Su KO ,  Kwanghee KIM ,  Jiye KIM

IPC分类号： G06F3/041 ,  C22F1/14 ,  B32B15/08 ,  B22F1/00 ,  G06F3/045 ,  B32B15/02

CPC分类号： G06F3/0412 ,  B22F1/0025 ,  B22F2301/255 ,  B22F2304/05 ,  B32B15/02 ,  B32B15/08 ,  B32B2307/202 ,  B32B2457/208 ,  C22F1/14 ,  G06F3/045 ,  G06F2203/04102 ,  G06F2203/04103 ,  H01B1/02 ,  H01B1/22

摘要： An electrical conductor includes a substrate; and a conductive layer disposed on the substrate and including a plurality of silver nanowires, wherein the silver nanowires exhibit a main peak assigned to a (111) crystal plane in an X-ray diffraction spectrum thereof, and a 2θ full width at half maximum (FWHM) of the main peak after Gaussian fitting is less than about 0.40 degrees.

公开(公告)号：US20230352548A1

公开(公告)日：2023-11-02

申请号：US18219525

申请日：2023-07-07

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： Eunae CHO ,  Dongjin LEE ,  Ji Eun LEE ,  Kyoung-Ho JUNG ,  Dong Su KO ,  Yongsu KIM ,  Jiho YOO ,  Sung HEO ,  Hyun PARK ,  Satoru YAMADA ,  Moonyoung JEONG ,  Sungjin KIM ,  Gyeongsu PARK ,  Han Jin LIM

IPC分类号： H01L29/49 ,  H01L21/28 ,  H01L29/423 ,  H01L29/51

CPC分类号： H01L29/4236 ,  H01L21/28088 ,  H01L29/4966 ,  H01L29/513 ,  H01L29/517

摘要： A semiconductor device and a method of manufacturing the same are provided. The semiconductor device includes a substrate including a trench. The semiconductor device further includes a gate electrode disposed in the trench, and a gate insulating film disposed between the substrate and the gate electrode. The gate electrode includes a gate conductor and a metal element, and an effective work function of the gate electrode is less than an effective work function of the gate conductor.

公开(公告)号：US20160260813A1

公开(公告)日：2016-09-08

申请号：US14854272

申请日：2015-09-15

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： Eunae CHO ,  Dongjin LEE ,  Ji Eun LEE ,  Kyoung-Ho JUNG ,  Dong Su KO ,  Yongsu KIM ,  Jiho YOO ,  Sung HEO ,  Hyun PARK ,  Satoru YAMADA ,  Moonyoung JEONG ,  Sungjin KIM ,  Gyeongsu PARK ,  Han Jin LIM

IPC分类号： H01L29/423 ,  H01L29/51 ,  H01L21/28 ,  H01L29/49

CPC分类号： H01L29/4236 ,  H01L21/28088 ,  H01L29/4966 ,  H01L29/513 ,  H01L29/517

摘要： A semiconductor device and a method of manufacturing the same are provided. The semiconductor device includes a substrate including a trench. The semiconductor device further includes a gate electrode disposed in the trench, and a gate insulating film disposed between the substrate and the gate electrode. The gate electrode includes a gate conductor and a metal element, and an effective work function of the gate electrode is less than an effective work function of the gate conductor.

摘要翻译： 提供半导体器件及其制造方法。 半导体器件包括包括沟槽的衬底。 半导体器件还包括设置在沟槽中的栅极电极和设置在衬底和栅电极之间的栅极绝缘膜。 栅电极包括栅极导体和金属元件，并且栅电极的有效功函数小于栅极导体的有效功函数。