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公开(公告)号：US20240322004A1
公开(公告)日：2024-09-26
申请号：US18497446
申请日：2023-10-30
Applicant: Samsung Electronics Co., Ltd.
Inventor： Jiho YOO , Kihyung KO , Jihoon CHA
IPC: H01L29/66 , H01L29/06 , H01L29/40 , H01L29/417 , H01L29/423 , H01L29/775
CPC classification number: H01L29/66439 , H01L29/0673 , H01L29/401 , H01L29/41733 , H01L29/42392 , H01L29/66545 , H01L29/775
Abstract: A method of manufacturing an integrated circuit device includes forming, on a substrate, a fin-type active region and a stack structure in which sacrificial semiconductor layers and nanosheet semiconductor layers are alternately stacked one-by-one, forming a first local liner on a sidewall of the stack structure to cover a sidewall of a bottom sacrificial semiconductor layer, which is closest to the fin-type active region and expose sidewalls of other sacrificial semiconductor layers, forming a second local liner on the sidewall of the stack structure to cover the sidewalls of the other sacrificial semiconductor layers except for the bottom sacrificial semiconductor layer, exposing the bottom sacrificial semiconductor layer by removing the first local liner, forming a bottom insulating space exposing a fin top surface of the fin-type active region by removing the bottom sacrificial semiconductor layer, and forming a bottom insulating structure in the bottom insulating space.
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公开(公告)号：US20180032663A1
公开(公告)日：2018-02-01
申请号：US15664960
申请日：2017-07-31
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Jiho YOO , Seokho KANG , Youngchun KWON , Kyung doc KIM , Jaikwang SHIN , Hyosug LEE , Younsuk CHOI
CPC classification number: G16B15/00 , G06N3/0445 , G06N5/04 , G06N20/00 , G16B40/00
Abstract: A structure-generating method for generating a structure candidate of a new material including: by a structure-generating processor: performing machine learning on a machine learning model, wherein the machine learning model is configured to provide a result based on a descriptor of a material, a physical property of the material, and a structure of the material; and generating a structure candidate of the new material based on the result of the machine learning, wherein the new material has a target physical property, and wherein the descriptor of the material, the physical property of the material, and the structure of the material are stored in a database.
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公开(公告)号：US20160260813A1
公开(公告)日：2016-09-08
申请号：US14854272
申请日：2015-09-15
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Eunae CHO , Dongjin LEE , Ji Eun LEE , Kyoung-Ho JUNG , Dong Su KO , Yongsu KIM , Jiho YOO , Sung HEO , Hyun PARK , Satoru YAMADA , Moonyoung JEONG , Sungjin KIM , Gyeongsu PARK , Han Jin LIM
IPC: H01L29/423 , H01L29/51 , H01L21/28 , H01L29/49
CPC classification number: H01L29/4236 , H01L21/28088 , H01L29/4966 , H01L29/513 , H01L29/517
Abstract: A semiconductor device and a method of manufacturing the same are provided. The semiconductor device includes a substrate including a trench. The semiconductor device further includes a gate electrode disposed in the trench, and a gate insulating film disposed between the substrate and the gate electrode. The gate electrode includes a gate conductor and a metal element, and an effective work function of the gate electrode is less than an effective work function of the gate conductor.
Abstract translation: 提供半导体器件及其制造方法。 半导体器件包括包括沟槽的衬底。 半导体器件还包括设置在沟槽中的栅极电极和设置在衬底和栅电极之间的栅极绝缘膜。 栅电极包括栅极导体和金属元件，并且栅电极的有效功函数小于栅极导体的有效功函数。
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公开(公告)号：US20210241176A1
公开(公告)日：2021-08-05
申请号：US17238460
申请日：2021-04-23
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Jiho YOO , Youngchun KWON , Kyungdoc KIM , Jaikwang SHIN , Hyosug LEE , Younsuk CHOI
IPC: G06N20/00 , G06N7/00 , G06F16/245 , G16C20/30 , G06F30/20
Abstract: A method for searching a new material includes: performing a learning on a material model, which is modeled based on a known material; determining a candidate material by inputting a targeted physical property to a result of the learning; and determining the new material from the candidate material.
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公开(公告)号：US20190067599A1
公开(公告)日：2019-02-28
申请号：US16057929
申请日：2018-08-08
Applicant: Samsung Electronics Co., Ltd. , Samsung SDI Co., Ltd.
Inventor： Dmitry KRAVCHUK , Wook KIM , Juhyun KIM , Changho NOH , Sangho PARK , Satoko ISHIBE , Seokho KANG , Inkoo KIM , Jiho YOO , Dongseon LEE , Hasup LEE , Jun CHWAE
Abstract: An organometallic compound represented by Formula 1: wherein, in Formula 1, groups and variables are the same as described in the specification.
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Patent Agency Ranking
公开(公告)号：US20170124482A1
公开(公告)日：2017-05-04
申请号：US15189373
申请日：2016-06-22
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Jiho YOO , Youngchun KWON , Kyungdoc KIM , Jaikwang SHIN , Hyosug LEE , Younsuk CHOI
CPC classification number: G06N20/00 , G06F16/245 , G06F17/5009 , G06N7/005 , G16C20/30 , G16C20/70
Abstract: A method for searching a new material includes: performing a learning on a material model, which is modeled based on a known material; determining a candidate material by inputting a targeted physical property to a result of the learning; and determining the new material from the candidate material.
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公开(公告)号：US20230352548A1
公开(公告)日：2023-11-02
申请号：US18219525
申请日：2023-07-07
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Eunae CHO , Dongjin LEE , Ji Eun LEE , Kyoung-Ho JUNG , Dong Su KO , Yongsu KIM , Jiho YOO , Sung HEO , Hyun PARK , Satoru YAMADA , Moonyoung JEONG , Sungjin KIM , Gyeongsu PARK , Han Jin LIM
IPC: H01L29/49 , H01L21/28 , H01L29/423 , H01L29/51
CPC classification number: H01L29/4236 , H01L21/28088 , H01L29/4966 , H01L29/513 , H01L29/517
Abstract: A semiconductor device and a method of manufacturing the same are provided. The semiconductor device includes a substrate including a trench. The semiconductor device further includes a gate electrode disposed in the trench, and a gate insulating film disposed between the substrate and the gate electrode. The gate electrode includes a gate conductor and a metal element, and an effective work function of the gate electrode is less than an effective work function of the gate conductor.
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公开(公告)号：US20210174910A1
公开(公告)日：2021-06-10
申请号：US17114713
申请日：2020-12-08
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Youngchun KWON , Jiho YOO , Younsuk CHOI , Youngmin NAM , Minsik PARK , Jinwoo PARK , Dongseon LEE
Abstract: A neural network apparatus for generating a new chemical structure may receive a structure input of a chemical structure; generate, based on the structure input, a negative attention vector that indicates a respective probability of presence of each of a plurality of blacklists in the structure input; generate a structure expression by encoding the structure input; generate a final reverse blacklist vector that does not include the plurality of blacklists, based on the negative attention vector and the structure expression; and generate the new chemical structure by decoding the final reverse blacklist vector.
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公开(公告)号：US20210125060A1
公开(公告)日：2021-04-29
申请号：US16887062
申请日：2020-05-29
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Youngchun KWON , Jinwoo PARK , Dongseon LEE , Youngmin NAM , Minsik PARK , Jiho YOO , Younsuk CHOI
Abstract: An apparatus for optimizing experimental conditions by using a neural network may calculate a prediction yield and accuracy of the prediction yield by using a neural network-based experimental prediction model. The apparatus may optimize the experimental conditions by determining an experiment priority of a respective experiment condition combination based on the prediction yield and the prediction accuracy and receiving a feedback of results of experiments performed according to the experiment priority.
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公开(公告)号：US20190220573A1
公开(公告)日：2019-07-18
申请号：US16156709
申请日：2018-10-10
Inventor： Youngchun KWON , Seokho KANG , Kyungdoc KIM , Jiho YOO , Younsuk CHOI
CPC classification number: G16C20/40 , G06N3/04 , G06N3/0445 , G06N3/0454 , G06N3/0472 , G06N3/08 , G06N3/126 , G16C20/50 , G16C20/70 , G16C20/80
Abstract: A method of generating a chemical structure performed by a neural network device includes receiving a target property value and a target structure characteristic value; selecting first generation descriptors; generating second generation descriptors; determining, using a first neural network of the neural network device, property values of the second generation descriptors; determining, using a second neural network of the neural network device, structure characteristic values of the second generation descriptors; selecting, from the second generation descriptors, candidate descriptors that satisfy the target property value and the target structure characteristic value; and generating, using the second neural network of the neural network device, chemical structures for the selected candidate descriptors.
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