Abstract:
Provided is a compound represented by Chemical Formula 1 and having a reorganization energy of the compound of less than about 0.163 eV and a maximum absorption wavelength value calculated by density functional theory (DFT) of less than or equal to about 495 nm, and photoelectric devices, light absorption sensors, sensor-embedded display panels, and electronic devices including the same.
In Chemical Formula 1, the definition of each substituent is as described in the specification.
Abstract:
A sensor-embedded display panel includes a substrate, a light emitting element on the substrate and including a light emitting layer, and a photosensor on the substrate and including a photoelectric conversion layer in parallel with the light emitting layer along an in-plane direction of the substrate, wherein the light emitting element and the photosensor each include a separate portion of a first common auxiliary layer that is a single piece of material that extends continuously on the light emitting layer and the photoelectric conversion layer, and a separate portion of a common electrode on the first common auxiliary layer and is configured to apply a common voltage to both the light emitting element and the photosensor, and the photoelectric conversion layer includes a sequential stack from the first common auxiliary layer of a first n-type semiconductor layer, a second n-type semiconductor layer, and a p-type semiconductor layer.
Abstract:
An image sensor may include a first photo-sensing device on a semiconductor substrate and configured to sense light of a first wavelength spectrum, and second and third photo-sensing devices integrated in the semiconductor substrate and configured to sense light of a second and third wavelength spectrum, respectively. The first photo-sensing device may overlap each of the second and third photo-sensing devices in a thickness direction of the semiconductor substrate. The second and third photo-sensing devices do not overlap in the thickness direction and each have an upper surface, a lower surface, and a doped region therebetween. The third photo-sensing device includes an upper surface deeper further from the upper surface of the semiconductor substrate than the upper surface of the second photo-sensing device and a doped region thicker than the doped region of the second photo-sensing device. The image sensor may omit the first photo-sensing device.
Abstract:
A battery casing including a container configured to house an electrode assembly, wherein the container includes a bottom wall and a plurality of side walls, the bottom wall and the plurality of side walls are integrated to define an open side opposite to the bottom wall and to define a space for housing the electrode assembly, at least one of the bottom wall and plurality of the side walls includes a composite including a thermotropic liquid crystal polymer and a nanoclay dispersed in the thermotropic liquid crystal polymer, wherein the main chain of the thermotropic liquid crystal polymer includes an aromatic oxycarbonyl repeating unit and an alkylene moiety-containing repeating unit, and at least a portion of the nanoclay is present in an exfoliated state, and an X-ray diffraction pattern of the composite does not exhibit an intrinsic peak corresponding to the nanoclay.
Abstract:
A battery casing including a container configured to house an electrode assembly, wherein the container includes a bottom wall and a plurality of side walls configured to define an open side opposite to the bottom wall and to define a space for housing the electrode assembly, at least one of the bottom wall and the plurality of side walls includes a composition including a base polymer and a plurality of nucleating agent particles dispersed in the base polymer, the base polymer includes a polyethylene polymer, the nucleating agent particles have a rod shape, the aspect ratio of the nucleating agent particles is greater than or equal to about 2, and an amount of the nucleating agent particles is about 0.01 parts by weight to about 3 parts by weight, based on 100 parts by weight of the base polymer.
Abstract:
An anti-reflective film includes a polarizing film and a compensation film, where the polarizing film includes a polymer, and a plurality of dichroic dyes having an absorption wavelength region in a range from about 380 nanometers to about 780 nanometers, and a reflective color of the anti-reflective film is substantially in a range of −5≦a*≦5 and −5≦b≦*5 in CIE-Lab color coordinates.
Abstract translation:抗反射膜包括偏振膜和补偿膜,其中偏振膜包括聚合物,并且多个二色性染料的吸收波长范围为约380纳米至约780纳米,反射颜色为 抗反射膜基本上在CIE-Lab颜色坐标中的-5< 1; a *≦̸ 5和-5≦̸ b≦̸ * 5的范围内。
Abstract:
Disclosed are a polarizing film including a polyolefin and a dichroic dye having a solubility parameter difference between the polyolefin and the dichroic dye is less than 7.4, and a display device including the polarizing film.
Abstract:
Provided are a compound represented by Chemical Formula 1A or 1B and a photoelectric device, a light absorption sensor, a sensor-embedded display panel, and an electronic device including the same.
Details for Chemical Formulas 1A and 1B are as described in the detailed description.
Abstract:
A sensor-embedded display panel includes a light emitting element and a sensor which include separate portions of a first common auxiliary layer including a hole transport material and a second common auxiliary layer including an electron transport material. The sensor includes first and second semiconductor layers proximate to the first and second common auxiliary layers, respectively, and including a p-type semiconductor and a non-fullerene n-type semiconductor having a LUMO energy level deeper than that of the electron transport material, respectively. An insertion layer between the second semiconductor layer and the second common auxiliary layer includes a metal, a metal compound, or any combination thereof. A work function of the metal or a LUMO energy level of the metal compound is deeper or shallower than the LUMO energy level of the non-fullerene n-type semiconductor and the LUMO energy level of the electron transport material within less than about 1.3 eV, respectively.
Abstract:
A sensor may include a reflective electrode, a photoelectric conversion layer on the reflective electrode and including one or more photoelectric conversion materials, a semi-transmissive electrode on the photoelectric conversion layer, a light transmitting buffer layer on the semi-transmissive electrode, and a semi-transmissive auxiliary layer on the light transmitting buffer layer.