SENSOR-EMBEDDED DISPLAY PANEL AND ELECTRONIC DEVICE

    公开(公告)号:US20220392972A1

    公开(公告)日:2022-12-08

    申请号:US17696272

    申请日:2022-03-16

    Abstract: A sensor-embedded display panel includes a substrate, a light emitting element on the substrate and including a light emitting layer, and a photosensor on the substrate and including a photoelectric conversion layer in parallel with the light emitting layer along an in-plane direction of the substrate, wherein the light emitting element and the photosensor each include a separate portion of a first common auxiliary layer that is a single piece of material that extends continuously on the light emitting layer and the photoelectric conversion layer, and a separate portion of a common electrode on the first common auxiliary layer and is configured to apply a common voltage to both the light emitting element and the photosensor, and the photoelectric conversion layer includes a sequential stack from the first common auxiliary layer of a first n-type semiconductor layer, a second n-type semiconductor layer, and a p-type semiconductor layer.

    IMAGE SENSORS AND ELECTRONIC DEVICES

    公开(公告)号:US20210242271A1

    公开(公告)日:2021-08-05

    申请号:US17097329

    申请日:2020-11-13

    Abstract: An image sensor may include a first photo-sensing device on a semiconductor substrate and configured to sense light of a first wavelength spectrum, and second and third photo-sensing devices integrated in the semiconductor substrate and configured to sense light of a second and third wavelength spectrum, respectively. The first photo-sensing device may overlap each of the second and third photo-sensing devices in a thickness direction of the semiconductor substrate. The second and third photo-sensing devices do not overlap in the thickness direction and each have an upper surface, a lower surface, and a doped region therebetween. The third photo-sensing device includes an upper surface deeper further from the upper surface of the semiconductor substrate than the upper surface of the second photo-sensing device and a doped region thicker than the doped region of the second photo-sensing device. The image sensor may omit the first photo-sensing device.

    BATTERY CASING AND BATTERY MODULE INCLUDING THE SAME

    公开(公告)号:US20190165337A1

    公开(公告)日:2019-05-30

    申请号:US16204333

    申请日:2018-11-29

    Abstract: A battery casing including a container configured to house an electrode assembly, wherein the container includes a bottom wall and a plurality of side walls configured to define an open side opposite to the bottom wall and to define a space for housing the electrode assembly, at least one of the bottom wall and the plurality of side walls includes a composition including a base polymer and a plurality of nucleating agent particles dispersed in the base polymer, the base polymer includes a polyethylene polymer, the nucleating agent particles have a rod shape, the aspect ratio of the nucleating agent particles is greater than or equal to about 2, and an amount of the nucleating agent particles is about 0.01 parts by weight to about 3 parts by weight, based on 100 parts by weight of the base polymer.

    SENSOR EMBEDDED DISPLAY PANEL AND ELECTRONIC DEVICE

    公开(公告)号:US20240196635A1

    公开(公告)日:2024-06-13

    申请号:US18459942

    申请日:2023-09-01

    CPC classification number: H10K39/34 G06V40/1318 H10K59/353 H10K2101/40

    Abstract: A sensor-embedded display panel includes a light emitting element and a sensor which include separate portions of a first common auxiliary layer including a hole transport material and a second common auxiliary layer including an electron transport material. The sensor includes first and second semiconductor layers proximate to the first and second common auxiliary layers, respectively, and including a p-type semiconductor and a non-fullerene n-type semiconductor having a LUMO energy level deeper than that of the electron transport material, respectively. An insertion layer between the second semiconductor layer and the second common auxiliary layer includes a metal, a metal compound, or any combination thereof. A work function of the metal or a LUMO energy level of the metal compound is deeper or shallower than the LUMO energy level of the non-fullerene n-type semiconductor and the LUMO energy level of the electron transport material within less than about 1.3 eV, respectively.

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