公开(公告)号：US20200335361A1

公开(公告)日：2020-10-22

申请号：US16692051

申请日：2019-11-22

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： Hun Jae JANG ,  Seung Min Shin ,  Seok Hoon Kim ,  In Gi Kim ,  Tae-Hong Kim ,  Kun Tack Lee ,  Jinwoo Lee ,  Ji Hoon Cha ,  Yong Jun Choi

IPC分类号： H01L21/67 ,  B08B7/00

摘要： A wafer cleaning equipment includes a housing to be positioned adjacent to a wafer, a hollow region in the housing, a laser module that outputs a laser beam having a profile of the laser beam includes a first region having a first intensity and a second region having a second intensity greater than the first intensity, the laser beam being output into the hollow region, and a transparent window that covers an upper part of the hollow region and transmits the laser beam to be incident on an entirety of a lower surface of the wafer.

公开(公告)号：US20200343113A1

公开(公告)日：2020-10-29

申请号：US16690498

申请日：2019-11-21

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： Yong Jun CHOI ,  Seok Hoon KIM ,  Young-Hoo KIM ,  In Gi KIM ,  Sung Hyun PARK ,  Seung Min SHIN ,  Kun Tack LEE ,  Jinwoo LEE ,  Hun Jae JANG ,  Ji Hoon CHA

IPC分类号： H01L21/67 ,  H01L21/687 ,  B08B3/08

摘要： A multi-chamber apparatus for processing a wafer, the apparatus including a high etch rate chamber to receive the wafer and to etch silicon nitride with a phosphoric acid solution; a rinse chamber to receive the wafer and to clean the wafer with an ammonia mixed solution; and a supercritical drying chamber to dry the wafer with a supercritical fluid.

公开(公告)号：US20230343613A1

公开(公告)日：2023-10-26

申请号：US18214096

申请日：2023-06-26

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： Yong Jun CHOI ,  Seok Hoon KIM ,  Young-Hoo KIM ,  In Gi KIM ,  Sung Hyun PARK ,  Seung Min SHIN ,  Kun Tack LEE ,  Jinwoo LEE ,  Hun Jae JANG ,  Ji Hoon CHA

IPC分类号： H01L21/67 ,  B08B3/08 ,  H01L21/687

CPC分类号： H01L21/67167 ,  H01L21/67063 ,  H01L21/67051 ,  B08B3/08 ,  H01L21/67034 ,  H01L21/68707

摘要： A multi-chamber apparatus for processing a wafer, the apparatus including a high etch rate chamber to receive the wafer and to etch silicon nitride with a phosphoric acid solution; a rinse chamber to receive the wafer and to clean the wafer with an ammonia mixed solution; and a supercritical drying chamber to dry the wafer with a supercritical fluid.

公开(公告)号：US20210060625A1

公开(公告)日：2021-03-04

申请号：US16890490

申请日：2020-06-02

申请人： Samsung Electronics Co., Ltd.

发明人： Seung Min SHIN ,  Hun Jae JANG ,  Seok Hoon KIM ,  Young-Hoo KIM ,  In Gi KIM ,  Tae-Hong KIM ,  Kun Tack LEE ,  Ji Hoon CHA ,  Yong Jun CHOI

IPC分类号： B08B7/00 ,  B08B3/10 ,  H01L21/67 ,  H01L21/687 ,  H01L21/311

摘要： A wafer cleaning apparatus is provided. The wafer cleaning apparatus includes comprising a chamber configured to be loaded with a wafer, a nozzle on the wafer and configured to provide liquid chemicals on an upper surface of the wafer, a housing under the wafer, a laser module configured to irradiate laser on the wafer, a transparent window disposed between the wafer and the laser module, and a controller configured to control on/off of the laser module, wherein the controller is configured to control repetition of turning the laser module on and off, and retain temperature of the wafer within a temperature range, and a ratio of time when the laser module is on in one cycle including on/off of the laser module is 30% to 50%.

公开(公告)号：US20230154743A1

公开(公告)日：2023-05-18

申请号：US18098330

申请日：2023-01-18

申请人： Samsung Electronics Co., Ltd.

发明人： SeongKeun CHO ,  Young Hoo KIM ,  Seung Min SHIN ,  Tae Min EARMME ,  Kun Tack LEE ,  Hun Jae JANG ,  Eun Hee JEANG

IPC分类号： H01L21/02 ,  B08B3/08 ,  H01L21/428 ,  H01L21/687

CPC分类号： H01L21/02057 ,  B08B3/08 ,  H01L21/428 ,  H01L21/68764

摘要： A wafer cleaning apparatus, a method of cleaning wafer and a method of fabricating a semiconductor device are provided. The method of fabricating the semiconductor device includes disposing a wafer on a rotatable chuck, irradiating a lower surface of the wafer with a laser to heat the wafer, and supplying a chemical to an upper surface of the wafer to clean the wafer, wherein the laser penetrates an optical system including an aspheric lens array, the laser penetrates a calibration window, which includes a first window structure including a first light projection window including first and second regions different from each other, a first coating layer covering the first region of the first light projection window, and a second coating layer covering the second region of the first light projection window, and the first coating layer and the second coating layer have different light transmissivities from each other.

公开(公告)号：US20220262621A1

公开(公告)日：2022-08-18

申请号：US17478619

申请日：2021-09-17

申请人： Samsung Electronics Co., Ltd.

发明人： Seongkeun CHO ,  Young Hoo KIM ,  Seung Min SHIN ,  Tae Min EARMME ,  Kun Tack LEE ,  Hun Jae JANG ,  Eun Hee JEANG

IPC分类号： H01L21/02 ,  H01L21/687 ,  H01L21/428 ,  B08B3/08

摘要： A wafer cleaning apparatus, a method of cleaning wafer and a method of fabricating a semiconductor device are provided. The method of fabricating the semiconductor device includes disposing a wafer on a rotatable chuck, irradiating a lower surface of the wafer with a laser to heat the wafer, and supplying a chemical to an upper surface of the wafer to clean the wafer, wherein the laser penetrates an optical system including an aspheric lens array, the laser penetrates a calibration window, which includes a first window structure including a first light projection window including first and second regions different from each other, a first coating layer covering the first region of the first light projection window, and a second coating layer covering the second region of the first light projection window, and the first coating layer and the second coating layer have different light transmissivities from each other.