公开(公告)号：US11189503B2

公开(公告)日：2021-11-30

申请号：US16420776

申请日：2019-05-23

申请人： Samsung Electronics Co., Ltd.

发明人： Young-Hoo Kim ,  Kuntack Lee ,  Yong-Jhin Cho ,  Chawon Koh ,  Sunghyun Park ,  Hyosan Lee ,  Ji Hoon Cha ,  Soo Young Choi

IPC分类号： H01L21/67 ,  H01L21/02

摘要： Disclosed are substrate drying methods, photoresist developing methods, and/or photolithography methods. The substrate drying method including providing a drying liquid on a substrate, increasing a pressure of the drying liquid to produce a supercritical fluid, and removing the supercritical fluid to dry the substrate may be provided.

公开(公告)号：US12100602B2

公开(公告)日：2024-09-24

申请号：US17807374

申请日：2022-06-16

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： Jin Woo Lee ,  Yong Jun Choi ,  Seok Hoon Kim ,  Seung Min Shin ,  Ji Hoon Cha

IPC分类号： H01L21/67

CPC分类号： H01L21/67086 ,  H01L21/67115 ,  H01L21/67253

摘要： A wet etching apparatus includes a process bath having an internal space configured to receive an etchant and having a support unit, on which a wafer is disposed to be in contact with the etchant. A laser unit is disposed above the process bath and is configured to direct a laser beam to the wafer and to heat the wafer thereby. An etchant supply unit is configured to supply the etchant to the internal space of the process bath.

公开(公告)号：US11721565B2

公开(公告)日：2023-08-08

申请号：US16690498

申请日：2019-11-21

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： Yong Jun Choi ,  Seok Hoon Kim ,  Young-Hoo Kim ,  In Gi Kim ,  Sung Hyun Park ,  Seung Min Shin ,  Kun Tack Lee ,  Jinwoo Lee ,  Hun Jae Jang ,  Ji Hoon Cha

IPC分类号： H01L21/67 ,  H01L21/687 ,  B08B3/08

CPC分类号： H01L21/67167 ,  B08B3/08 ,  H01L21/67034 ,  H01L21/67051 ,  H01L21/67063 ,  H01L21/68707

摘要： A multi-chamber apparatus for processing a wafer, the apparatus including a high etch rate chamber to receive the wafer and to etch silicon nitride with a phosphoric acid solution; a rinse chamber to receive the wafer and to clean the wafer with an ammonia mixed solution; and a supercritical drying chamber to dry the wafer with a supercritical fluid.

公开(公告)号：US11648594B2

公开(公告)日：2023-05-16

申请号：US16890490

申请日：2020-06-02

申请人： Samsung Electronics Co., Ltd.

发明人： Seung Min Shin ,  Hun Jae Jang ,  Seok Hoon Kim ,  Young-Hoo Kim ,  In Gi Kim ,  Tae-Hong Kim ,  Kun Tack Lee ,  Ji Hoon Cha ,  Yong Jun Choi

IPC分类号： B08B7/00 ,  B08B3/10 ,  H01L21/67 ,  H01L21/687 ,  H01L21/311

CPC分类号： B08B7/0042 ,  B08B3/10 ,  B08B7/0064 ,  H01L21/31111 ,  H01L21/67051 ,  H01L21/67075 ,  H01L21/67098 ,  H01L21/67248 ,  H01L21/68764

摘要： A wafer cleaning apparatus is provided. The wafer cleaning apparatus includes comprising a chamber configured to be loaded with a wafer, a nozzle on the wafer and configured to provide liquid chemicals on an upper surface of the wafer, a housing under the wafer, a laser module configured to irradiate laser on the wafer, a transparent window disposed between the wafer and the laser module, and a controller configured to control on/off of the laser module, wherein the controller is configured to control repetition of turning the laser module on and off, and retain temperature of the wafer within a temperature range, and a ratio of time when the laser module is on in one cycle including on/off of the laser module is 30% to 50%.

公开(公告)号：US20140206169A1

公开(公告)日：2014-07-24

申请号：US13834118

申请日：2013-03-15

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： Ji Hoon Cha ,  Jae-Jik Baek ,  Bo-Un Yoon ,  Young-Sang Youn ,  Jeong-Nam Han

IPC分类号： H01L29/66

CPC分类号： H01L29/66628 ,  H01L21/30604 ,  H01L21/3065 ,  H01L21/3086 ,  H01L21/76229 ,  H01L21/823412 ,  H01L21/823418 ,  H01L21/823481 ,  H01L21/823807 ,  H01L21/823814 ,  H01L21/823878 ,  H01L29/66636 ,  H01L29/7848

摘要： A method of forming a semiconductor device can include providing a plasma nitrided exposed top surface including an active region and an isolation region. The exposed top surface including the active region and the isolation region can be subjected to etching to form a deeper recess in the active region that in the isolation region and an unmerged epitaxial stress film can be grown in the deeper recess.

摘要翻译： 形成半导体器件的方法可以包括提供包括有源区和隔离区的等离子体氮化的暴露顶表面。 包括有源区和隔离区的暴露的顶表面可以进行蚀刻，以在有源区中形成更深的凹槽，在隔离区中形成较深的凹槽，并且在较深的凹槽中可以生长未熔合的外延应力膜。

公开(公告)号：US12042828B2

公开(公告)日：2024-07-23

申请号：US18299279

申请日：2023-04-12

申请人： Samsung Electronics Co., Ltd.

发明人： Seung Min Shin ,  Hun Jae Jang ,  Seok Hoon Kim ,  Young-Hoo Kim ,  In Gi Kim ,  Tae-Hong Kim ,  Kun Tack Lee ,  Ji Hoon Cha ,  Yong Jun Choi

IPC分类号： B08B7/00 ,  B08B3/10 ,  H01L21/311 ,  H01L21/67 ,  H01L21/687

CPC分类号： B08B7/0042 ,  B08B3/10 ,  B08B7/0064 ,  H01L21/31111 ,  H01L21/67051 ,  H01L21/67075 ,  H01L21/67098 ,  H01L21/67248 ,  H01L21/68764

摘要： A wafer cleaning apparatus is provided. The wafer cleaning apparatus includes comprising a chamber configured to be loaded with a wafer, a nozzle on the wafer and configured to provide liquid chemicals on an upper surface of the wafer, a housing under the wafer, a laser module configured to irradiate laser on the wafer, a transparent window disposed between the wafer and the laser module, and a controller configured to control on/off of the laser module, wherein the controller is configured to control repetition of turning the laser module on and off, and retain temperature of the wafer within a temperature range, and a ratio of time when the laser module is on in one cycle including on/off of the laser module is 30% to 50%.

公开(公告)号：US20230249230A1

公开(公告)日：2023-08-10

申请号：US18299279

申请日：2023-04-12

申请人： Samsung Electronics Co., Ltd.

发明人： Seung Min SHIN ,  Hun Jae Jang ,  Seok Hoon Kim ,  Young-Hoo Kim ,  In Gi Kim ,  Tae-Hong Kim ,  Kun Tack Lee ,  Ji Hoon Cha ,  Yong Jun Choi

IPC分类号： B08B7/00 ,  B08B3/10 ,  H01L21/67 ,  H01L21/687 ,  H01L21/311

CPC分类号： B08B7/0042 ,  B08B3/10 ,  B08B7/0064 ,  H01L21/67051 ,  H01L21/67075 ,  H01L21/67248 ,  H01L21/68764 ,  H01L21/31111 ,  H01L21/67098

摘要： A wafer cleaning apparatus is provided. The wafer cleaning apparatus includes comprising a chamber configured to be loaded with a wafer, a nozzle on the wafer and configured to provide liquid chemicals on an upper surface of the wafer, a housing under the wafer, a laser module configured to irradiate laser on the wafer, a transparent window disposed between the wafer and the laser module, and a controller configured to control on/off of the laser module, wherein the controller is configured to control repetition of turning the laser module on and off, and retain temperature of the wafer within a temperature range, and a ratio of time when the laser module is on in one cycle including on/off of the laser module is 30% to 50%.

公开(公告)号：US20230231049A1

公开(公告)日：2023-07-20

申请号：US17889744

申请日：2022-08-17

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： Dongsuk SHIN ,  Hyun-Kwan Yu ,  Sunyoung Lee ,  Ji Hoon Cha ,  Kyungyeon Hwang

IPC分类号： H01L29/78 ,  H01L29/06 ,  H01L29/423 ,  H01L29/51

CPC分类号： H01L29/783 ,  H01L29/0649 ,  H01L29/42364 ,  H01L29/512

摘要： A semiconductor device includes a substrate including an active pattern, a channel pattern on the active pattern and including semiconductor patterns, a source/drain pattern connected to the semiconductor patterns, a gate electrode on the semiconductor patterns, and a gate dielectric layer between the gate electrode and the semiconductor patterns. An inner spacer of the gate dielectric layer includes a horizontal portion between the high-k dielectric layer and the second semiconductor pattern, a vertical portion between the high-k dielectric layer and the source/drain pattern, and a corner portion between the horizontal portion and the vertical portion. A first thickness of the horizontal portion is less than a second thickness of the vertical portion. The second thickness of the vertical portion is less than a third thickness of the corner portion.

公开(公告)号：US11631599B2

公开(公告)日：2023-04-18

申请号：US16683753

申请日：2019-11-14

申请人： Samsung Electronics Co., Ltd.

发明人： Ji Hoon Cha ,  Jinwoo Lee ,  Seok Hoon Kim ,  In Gi Kim ,  Seung Min Shin ,  Yong Jun Choi

IPC分类号： H01L21/67 ,  H01L21/687

摘要： An apparatus is provided. The apparatus includes a spinner configured to hold a wafer, a nozzle configured to supply a liquid chemical onto an upper surface of the wafer, and a laser module configured to heat the wafer by radiating a laser beam to a lower surface of the wafer while the nozzle supplies the liquid chemical onto the upper surface of the wafer.

公开(公告)号：US11605545B2

公开(公告)日：2023-03-14

申请号：US16692051

申请日：2019-11-22

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： Hun Jae Jang ,  Seung Min Shin ,  Seok Hoon Kim ,  In Gi Kim ,  Tae-Hong Kim ,  Kun Tack Lee ,  Jinwoo Lee ,  Ji Hoon Cha ,  Yong Jun Choi

IPC分类号： H01L21/67 ,  B08B7/00

摘要： A wafer cleaning equipment includes a housing to be positioned adjacent to a wafer, a hollow region in the housing, a laser module that outputs a laser beam having a profile of the laser beam includes a first region having a first intensity and a second region having a second intensity greater than the first intensity, the laser beam being output into the hollow region, and a transparent window that covers an upper part of the hollow region and transmits the laser beam to be incident on an entirety of a lower surface of the wafer.