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公开(公告)号：US20250092275A1
公开(公告)日：2025-03-20
申请号：US18884655
申请日：2024-09-13
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Jong Hoon WON , Deuk Kyu MOON , Shang Hyeun PARK , Tae-Gon KIM , Dongjin YUN
IPC: C09D11/50 , B82Y20/00 , B82Y40/00 , C09D11/037 , C09D11/107 , C09D11/52 , C09K11/02 , C09K11/62 , G02F1/13357 , H01L33/50 , H10K59/38
Abstract: An ink composition including a semiconductor nanoparticle, a first organic ligand, and a polymerizable monomer; and a semiconductor nanoparticle-polymer composite prepared therefrom. The semiconductor nanoparticle includes a Group 11-13-16 compound including silver, indium, gallium, and sulfur. The first organic ligand includes an aromatic group and fluorine, and in the ink composition, the amount of the semiconductor nanoparticles is about 2 weight percent to about 70 weight percent based on a total weight of the ink composition.
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公开(公告)号：US20240147735A1
公开(公告)日：2024-05-02
申请号：US18187151
申请日：2023-03-21
Applicant: Samsung Electronics Co., Ltd.
Inventor： Sung HEO , Hajun SUNG , Seongyong PARK , Wooyoung YANG , Dongjin YUN
Abstract: A switching device including a first electrode layer, a second electrode layer arranged to face the first electrode layer, and a selection layer arranged between the first electrode layer and the second electrode layer, wherein the first electrode layer is doped with at least one of manganese (Mn), iron (Fe), niobium (Nb), molybdenum (Mo), technetium (Tc), ruthenium (Ru), rhodium (Rh), hafnium (Hf), tantalum (Ta), tungsten (W), rhenium (Re), iridium (Ir), or platinum (Pt), may be provided.
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公开(公告)号：US20190334110A1
公开(公告)日：2019-10-31
申请号：US16505710
申请日：2019-07-09
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Dongjin YUN , Sunghoon PARK , Seong Heon KIM , Hyangsook LEE , Woon Jung PAEK , Youngnam KWON , Yongsu KIM , Jaegwan CHUNG
IPC: H01L51/52 , H01B1/22 , H01L51/00 , H01L21/3213
Abstract: A conductor includes a plurality of metal nanostructures and an organic material, where a portion of the organic material surrounding each of the metal nanostructures is selectively removed, and the conductor has a haze of less than or equal to about 1.1, a light transmittance of greater than or equal to about 85% at about 550 nm, and a sheet resistance of less than or equal to about 100 Ω/sq. An electronic device includes the conductor, and a method of manufacturing a conductor includes preparing a conductive film including a metal nanostructure and an organic material, and selectively removing the organic material from the conductive film using a cluster ion beam sputtering.
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公开(公告)号：US20160226012A1
公开(公告)日：2016-08-04
申请号：US14788780
申请日：2015-06-30
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Dongjin YUN , Sunghoon PARK , Seong Heon KIM , Hyangsook LEE , Woon Jung PAEK , Youngnam KWON , Yongsu KIM , Jaegwan CHUNG
IPC: H01L51/52 , H01L51/00 , H01L21/3213
CPC classification number: H01L51/5206 , H01B1/22 , H01L21/32131 , H01L51/0035 , H01L51/004 , H01L51/0067 , H01L51/0097 , H01L51/5234
Abstract: A conductor includes a plurality of metal nanostructures and an organic material, where a portion of the organic material surrounding each of the metal nanostructures is selectively removed, and the conductor has a haze of less than or equal to about 1.1, a light transmittance of greater than or equal to about 85% at about 550 nm, and a sheet resistance of less than or equal to about 100 Ω/sq. An electronic device includes the conductor, and a method of manufacturing a conductor includes preparing a conductive film including a metal nanostructure and an organic material, and selectively removing the organic material from the conductive film using a cluster ion beam sputtering.
Abstract translation: 导体包括多个金属纳米结构和有机材料，其中围绕每个金属纳米结构的有机材料的一部分被选择性地去除，并且导体具有小于或等于约1.1的雾度，更大的透光率 在约550nm处为约85％以上，薄层电阻小于或等于约100Ω/ sq。 电子设备包括导体，制造导体的方法包括制备包括金属纳米结构和有机材料的导电膜，并使用簇离子束溅射从导电膜选择性地除去有机材料。
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Patent Agency Ranking
公开(公告)号：US20230157022A1
公开(公告)日：2023-05-18
申请号：US17986371
申请日：2022-11-14
Applicant: Samsung Electronics Co., Ltd.
Inventor： Keunwook SHIN , Changhyun KIM , Sehun PARK , Hyunwoo KIM , Kyung-Eun BYUN , Dongjin YUN , Changseok LEE
IPC: H01L27/11582 , G06N3/063
CPC classification number: H01L27/11582 , G06N3/0635
Abstract: A vertical nonvolatile memory device may include a channel layer extending in a first direction; a plurality of gate electrodes and a plurality of spacers each extending in a second direction crossing the first direction, the plurality of gate electrodes and the plurality of spacers being alternately arranged with each other in the first direction; and a gate insulating layer extending in the first direction between the channel layer and the plurality of gate electrodes. Each of the plurality of gate electrodes may include a metal-doped graphene.
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公开(公告)号：US20170260218A1
公开(公告)日：2017-09-14
申请号：US15255369
申请日：2016-09-02
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Weonkyu KOH , Sungjun PARK , Dongjin YUN , Junho LEE
CPC classification number: C07F9/3808 , B82Y20/00 , B82Y30/00 , B82Y40/00 , C09K11/06 , C09K2211/181 , H01L51/005 , H01L51/502 , Y10S977/774 , Y10S977/896 , Y10S977/95
Abstract: A nanocrystal represented by the following Formula 1 and a preparation method thereof: AMX3L Formula 1 wherein A is cesium (Cs), rubidium (Rb), or an ammonium salt, M is germanium (Ge), tin (Sn), or lead (Pb), X is one or more selected from Cl, Br and I, and L is an organic functional group having one terminal selected from a phosphonic acid group, a carboxylic acid group, and an amino group.
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公开(公告)号：US20210355380A1
公开(公告)日：2021-11-18
申请号：US17238538
申请日：2021-04-23
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Sung Jun PARK , Junghwa KIM , Tae Gon KIM , Taekhoon KIM , Young Mo SUNG , Nayoun WON , Dongjin YUN , Mi Hye LIM , Shin Ae JUN , Hyeonsu HEO
IPC: C09K11/56
Abstract: A quantum dot including a semiconductor nanocrystal core including Group III-V compound, a first semiconductor nanocrystal shell disposed on the semiconductor nanocrystal core, the first semiconductor nanocrystal shell including zinc and selenium, and a second semiconductor nanocrystal shell disposed on the first semiconductor nanocrystal shell, the second semiconductor nanocrystal shell including zinc and sulfur, and a composite/electronic device. The quantum dot does not include cadmium and the first semiconductor nanocrystal shell includes a polyvalent metal dopant at an interface with the second semiconductor nanocrystal shell.
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公开(公告)号：US20190131030A1
公开(公告)日：2019-05-02
申请号：US16162488
申请日：2018-10-17
Applicant: Samsung Electronics Co., Ltd.
Inventor： Dongjin YUN , Seyun KIM , Minsu SEOL , Changseok LEE , Seongheon KIM , Hyangsook LEE , Changhoon JUNG
Abstract: Provided are a conductive composite structure for an electronic device, a method of preparing the conductive composite structure, an electrode for an electronic device including the conductive composite structure, and an electronic device including the conductive composite structure. The conductive composite structure may contain graphene and an organic composite layer including a conductive polymer having a work function of about 5.3 eV or lower, and has a sheet resistance deviation of about 10% or less.
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9.发明申请OPTOELECTRONIC DEVICE, AND IMAGE SENSOR AND ELECTRONIC DEVICE INCLUDING THE SAME 有权光电装置，图像传感器和包括其的电子装置公开(公告)号：US20160233351A1
公开(公告)日：2016-08-11
申请号：US14744938
申请日：2015-06-19
Applicant: Samsung Electronics Co., Ltd.
Inventor： Seong Heon KIM , Dongjin YUN , Sung HEO , Kyu Sik KIM , Satoh RYUICHI , Gyeongsu PARK , Hyung-Ik LEE
IPC: H01L31/0224 , H01L31/18 , H01L27/146
CPC classification number: H01L31/022408 , H01L31/18 , H01L51/0046 , H01L51/0077 , H01L51/4253 , Y02E10/549 , Y02P70/521
Abstract: An optoelectronic device includes a first electrode and a second electrode facing each other, a photoelectric conversion layer between the first electrode and the second electrode, and a buffer layer between at least one of the photoelectric conversion layer and the first electrode, and the photoelectric conversion layer and the second electrode, the buffer layer including one of MoOx1 (2.58≦x1
Abstract translation: 光电子器件包括彼此面对的第一电极和第二电极，第一电极和第二电极之间的光电转换层，以及光电转换层和第一电极中的至少一个之间的缓冲层，以及光电转换 所述缓冲层包括MoOx1（2.58≤x1<3.0），ZnOx2（1.0≤x2<2.0），TiOx3（1.5≤x3<2.0），VOx4（1.5≤x4<2.0），TaOx5（ 1.0≤x5<2.5），WOx6（2.0
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