公开(公告)号：US20170008042A1

公开(公告)日：2017-01-12

申请号：US15165664

申请日：2016-05-26

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyouncheol Kim ,  Youngil Kwon ,  Giduck Kweon ,  Jong-il Park ,  lnwoo Seo ,  Wooksung Son

IPC: B08B7/00 ,  B08B9/08 ,  B08B5/00 ,  H01L21/02

CPC classification number: B08B7/0071 ,  B08B9/00 ,  C23C16/4401

Abstract: Embodiments of the inventive concepts provide a method of cleaning a furnace-type semiconductor apparatus that is equipped in a clean room and includes a process chamber in which a process of forming a thin film is performed on a substrate. The method includes supplying air of the clean room into the process chamber after the process of forming the thin film, and thermally treating an inside of the process chamber using the air of the clean room supplied to the inside of the process chamber. An adhered material containing chlorine is formed on an inner surface of the process chamber by the process of forming the thin film, and the chlorine of the adhered material is removed by the thermal treatment of the inside of the process chamber.

Abstract translation: 本发明构思的实施例提供了一种清洁装置在洁净室中的炉型半导体装置的方法，包括在基板上进行形成薄膜的工艺的处理室。 该方法包括在形成薄膜的过程之后将洁净室的空气供应到处理室中，并且使用供应到处理室内部的洁净室的空气热处理处理室的内部。 通过形成薄膜的过程，在处理室的内表面上形成含有氯的粘附材料，并且通过处理室内部的热处理除去附着材料的氯。

公开(公告)号：US11946138B2

公开(公告)日：2024-04-02

申请号：US17543807

申请日：2021-12-07

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jaeheung Lee ,  Junseong Park ,  Kanghun Lee ,  Seongwan Kim ,  Hyouncheol Kim

IPC: C23C16/455 ,  C23C16/52 ,  H01L21/67 ,  C23C16/44 ,  F16K1/36 ,  F16K31/126 ,  F16K51/02

CPC classification number: C23C16/45525 ,  C23C16/52 ,  H01L21/67017 ,  H01L21/67253 ,  C23C16/4412 ,  C23C16/45546 ,  F16K1/36 ,  F16K31/126 ,  F16K51/02

Abstract: A vacuum valve includes a valve flange having a first port, a second port, and a valve seat in a space between the first port and the second port, a valve body in the valve flange, the valve body having a contact surface facing the valve seat, and the valve body being moveable to have the contact surface contact the valve seat and to be separated from the valve seat, a disk on the contact surface of the valve body, the disk having an inclined surface inclined toward the second port, and an actuator connected to the valve flange, the actuator being configured to apply a driving force to the valve body to move the contact surface of the valve body into or out of contact with the valve seat.

公开(公告)号：US20210062335A1

公开(公告)日：2021-03-04

申请号：US17010541

申请日：2020-09-02

Applicant: Samsung Electronics Co., Ltd.

Inventor： Byunghwan Kong ,  Hyouncheol Kim ,  Junseong Park ,  Jaewon Yu ,  Hyunju Lee ,  Kwanghyun Jin ,  Youngmin Ha

IPC: C23C16/44 ,  B05B1/02

Abstract: An apparatus for manufacturing a semiconductor device includes a boat configured to support a plurality of stacked substrates, a first tube surrounding the boat in a lateral direction and having a cylindrical shape with an upper portion thereof being open, and a cleaning gas supply nozzle extending from an outer portion of the first tube to a portion between an interior sidewall of the first tube and the boat. The cleaning gas supply nozzle may include a first segment extending from the outer portion of the first tube to an inner portion of the first tube, a second segment extending in a lengthwise direction of the first tube from an end of the first segment, and a third segment extending in a direction differing from the extension direction of the second segment from an end of the second segment.

公开(公告)号：US10413946B2

公开(公告)日：2019-09-17

申请号：US15165664

申请日：2016-05-26

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyouncheol Kim ,  Youngil Kwon ,  Giduck Kweon ,  Jong-il Park ,  Inwoo Seo ,  Wooksung Son

IPC: B08B7/00 ,  B08B9/00 ,  C23C16/44

Abstract: Embodiments of the inventive concepts provide a method of cleaning a furnace-type semiconductor apparatus that is equipped in a clean room and includes a process chamber in which a process of forming a thin film is performed on a substrate. The method includes supplying air of the clean room into the process chamber after the process of forming the thin film, and thermally treating an inside of the process chamber using the air of the clean room supplied to the inside of the process chamber. An adhered material containing chlorine is formed on an inner surface of the process chamber by the process of forming the thin film, and the chlorine of the adhered material is removed by the thermal treatment of the inside of the process chamber.