公开(公告)号：US11817298B2

公开(公告)日：2023-11-14

申请号：US17108037

申请日：2020-12-01

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Incheol Song ,  Masayuki Tomoyasu ,  Hongmin Yoon ,  Jihyun Lim

IPC: H01J37/32

CPC classification number: H01J37/32642 ,  H01J37/32174 ,  H01J37/32715 ,  H01J2237/3341

Abstract: A focus ring includes a first conductive layer having a first thickness and a first specific resistance, a second conductive layer stacked on the first conductive layer, the second conductive layer having a second thickness greater than the first thickness and a second specific resistance greater than the first specific resistance, and a dielectric layer on one of a lower surface of the first conductive layer and an upper surface of the second conductive layer.

公开(公告)号：US20220216039A1

公开(公告)日：2022-07-07

申请号：US17401443

申请日：2021-08-13

Applicant: Samsung Electronics Co., Ltd.

Inventor： Eunhee Jeang ,  Seongkeun Cho ,  Kyungrim Kim ,  Incheol Song ,  Jangwon Cho

IPC: H01J37/32

Abstract: A wafer processing apparatus includes a chamber body including a cavity region and a process region; a microwave waveguide configured to introduce a microwave into the cavity region; a first microwave window between the cavity region and the process region; and a magnetic field supplying device configured to apply a magnetic field inside the chamber body, wherein a thickness of the first microwave window is constant, and the first microwave window is configured to control a beam cross-section of the microwave in the process region.

公开(公告)号：US11996270B2

公开(公告)日：2024-05-28

申请号：US17401443

申请日：2021-08-13

Applicant: Samsung Electronics Co., Ltd.

Inventor： Eunhee Jeang ,  Seongkeun Cho ,  Kyungrim Kim ,  Incheol Song ,  Jangwon Cho

IPC: H01J37/32 ,  C23C16/44 ,  C23C16/455 ,  C23C16/511 ,  H01L21/67

CPC classification number: H01J37/32238 ,  H01J37/32229 ,  H01J37/32669 ,  C23C16/4404 ,  C23C16/45565 ,  C23C16/511 ,  H01J37/3244 ,  H01J37/3266 ,  H01L21/67069

Abstract: A wafer processing apparatus includes a chamber body including a cavity region and a process region; a microwave waveguide configured to introduce a microwave into the cavity region; a first microwave window between the cavity region and the process region; and a magnetic field supplying device configured to apply a magnetic field inside the chamber body, wherein a thickness of the first microwave window is constant, and the first microwave window is configured to control a beam cross-section of the microwave in the process region.

公开(公告)号：US11450545B2

公开(公告)日：2022-09-20

申请号：US16683707

申请日：2019-11-14

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jongwoo Sun ,  Incheol Song ,  Hongmin Yoon ,  Jihyun Lim ,  Masayuki Tomoyasu ,  Jewoo Han

IPC: H01L21/683 ,  H01J37/32

Abstract: According to some embodiments, a semiconductor substrate processing apparatus includes a housing, a plasma source unit, an electrostatic chuck, and a ring unit. The housing encloses a process chamber. The plasma source unit is connected to the housing, and includes a shower head and a fixing ring positioned to support the shower head. The shower head includes an upper electrode mounted on the fixing ring, and includes injection holes passing through part of the upper electrode and configured to inject gas into the chamber. The electrostatic chuck is connected to the housing and includes a lower electrode, and is for mounting a semiconductor substrate thereon. The ring unit is mounted on an edge portion of the electrostatic chuck, and includes a focus ring and a cover ring surrounding the focus ring. One of the lower electrode and the upper electrode is connected to a high frequency power supply, and the other of the lower electrode and the upper electrode is connected to ground. The focus ring has an inner side surface, and an opposite outer side surface that contacts the cover ring, and a width between the inner side surface and the outer side surface of the focus ring is a first width. The cover ring has an inner side surface that contacts the outer side surface of the focus ring, and an outer side surface, and a width between the inner side surface and the outer side surface of the cover ring is a second width. The first width is between 2 and 10 time the second width.