公开(公告)号：US20190079702A1

公开(公告)日：2019-03-14

申请号：US15970237

申请日：2018-05-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jesuk YEON ,  Seontaek Kim ,  Young-Ho Park ,  Eun Ju Choi ,  Yonghwa Lee

IPC: G06F3/06 ,  G06F12/0802 ,  G06F12/10 ,  G11C7/10 ,  H01L27/11578 ,  G11C16/14 ,  G11C16/04

Abstract: A storage device includes a nonvolatile memory device; and a controller configured to, sequentially receive first read commands and a first write command, the first write command being associated with first write data, slice the first write command to generate a plurality of sub-commands, slice the first write data to generate a plurality of sub-data elements, and alternately transmit, to the nonvolatile memory device, at least one read command of the first read commands, and one sub-command of the plurality of sub-commands and one sub-data element of the plurality of sub-data elements.

公开(公告)号：US11467739B2

公开(公告)日：2022-10-11

申请号：US17076619

申请日：2020-10-21

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Byoung Geun Kim ,  Keunsan Park ,  Sangyoon Oh ,  Byung-Ki Lee ,  Yonghwa Lee ,  Jooyoung Hwang

IPC: G06F3/06

Abstract: An operation method of a storage device, which includes a nonvolatile memory device, includes receiving a first key-value (KV) command including a first key from an external host device; transmitting a first value corresponding to the first key from the nonvolatile memory device to the external host device as first user data, in response to the first KV command; receiving a second KV command including a second key, from the external host device; and performing a first administrative operation based on a second value corresponding to the second key, in response to the second KV command. The first KV command and the second KV command are KV commands of a same type.

公开(公告)号：US11029893B2

公开(公告)日：2021-06-08

申请号：US15970237

申请日：2018-05-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jesuk Yeon ,  Seontaek Kim ,  Young-Ho Park ,  Eun Ju Choi ,  Yonghwa Lee

IPC: G06F3/06 ,  G06F12/10 ,  G06F12/0802 ,  G06F3/16 ,  G11C16/04 ,  G11C7/10 ,  H01L27/11578 ,  G11C16/14 ,  G11C16/26 ,  G11C16/10

Abstract: A storage device includes a nonvolatile memory device; and a controller configured to, sequentially receive first read commands and a first write command, the first write command being associated with first write data, slice the first write command to generate a plurality of sub-commands, slice the first write data to generate a plurality of sub-data elements, and alternately transmit, to the nonvolatile memory device, at least one read command of the first read commands, and one sub-command of the plurality of sub-commands and one sub-data element of the plurality of sub-data elements.

公开(公告)号：US12242761B2

公开(公告)日：2025-03-04

申请号：US18345124

申请日：2023-06-30

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jesuk Yeon ,  Seontaek Kim ,  Young-Ho Park ,  Eun Ju Choi ,  Yonghwa Lee

IPC: G06F3/06 ,  G06F3/16 ,  G06F12/0802 ,  G06F12/10 ,  G11C7/10 ,  G11C16/04 ,  G11C16/14 ,  H10B43/20 ,  G11C16/10 ,  G11C16/26

Abstract: A storage device includes a nonvolatile memory device; and a controller configured to, sequentially receive first read commands and a first write command, the first write command being associated with first write data, slice the first write command to generate a plurality of sub-commands, slice the first write data to generate a plurality of sub-data elements, and alternately transmit, to the nonvolatile memory device, at least one read command of the first read commands, and one sub-command of the plurality of sub-commands and one sub-data element of the plurality of sub-data elements.

公开(公告)号：US11775183B2

公开(公告)日：2023-10-03

申请号：US17939387

申请日：2022-09-07

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Byoung Geun Kim ,  Keunsan Park ,  Sangyoon Oh ,  Byung-Ki Lee ,  Yonghwa Lee ,  Jooyoung Hwang

IPC: G06F3/06

CPC classification number: G06F3/0622 ,  G06F3/0604 ,  G06F3/0656 ,  G06F3/0659 ,  G06F3/0679

Abstract: An operation method of a storage device, which includes a nonvolatile memory device, includes receiving a first key-value (KV) command including a first key from an external host device; transmitting a first value corresponding to the first key from the nonvolatile memory device to the external host device as first user data, in response to the first KV command; receiving a second KV command including a second key, from the external host device; and performing a first administrative operation based on a second value corresponding to the second key, in response to the second KV command. The first KV command and the second KV command are KV commands of a same type.

公开(公告)号：US11693605B2

公开(公告)日：2023-07-04

申请号：US17307309

申请日：2021-05-04

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jesuk Yeon ,  Seontaek Kim ,  Young-Ho Park ,  Eun Ju Choi ,  Yonghwa Lee

IPC: G06F3/06 ,  G06F12/10 ,  G06F12/0802 ,  G06F3/16 ,  G11C16/04 ,  G11C7/10 ,  G11C16/14 ,  H10B43/20 ,  G11C16/26 ,  G11C16/10

CPC classification number: G06F3/0679 ,  G06F3/061 ,  G06F3/064 ,  G06F3/0611 ,  G06F3/0629 ,  G06F3/0659 ,  G06F3/0688 ,  G06F3/167 ,  G06F12/0802 ,  G06F12/10 ,  G11C7/1015 ,  G11C7/1084 ,  G11C16/04 ,  G11C16/14 ,  H10B43/20 ,  G11C16/0483 ,  G11C16/10 ,  G11C16/26

Abstract: A storage device includes a nonvolatile memory device; and a controller configured to, sequentially receive first read commands and a first write command, the first write command being associated with first write data, slice the first write command to generate a plurality of sub-commands, slice the first write data to generate a plurality of sub-data elements, and alternately transmit, to the nonvolatile memory device, at least one read command of the first read commands, and one sub-command of the plurality of sub-commands and one sub-data element of the plurality of sub-data elements.