SWITCHING CIRCUIT FOR SWITCHING SIGNAL PATH IN WIRELESS COMMUNICATION SYSTEM, AND ELECTRONIC DEVICE COMPRISING SAME

    公开(公告)号:US20230188166A1

    公开(公告)日:2023-06-15

    申请号:US18165006

    申请日:2023-02-06

    CPC classification number: H04B1/0078 H04B1/0483

    Abstract: A 5th generation (5G) or pre-5G communication system for supporting a higher data rate than previous 4th generation (4G) communication systems is provided. A switching circuit in a wireless communication system is provided. The switching circuit includes a first coil, a second coil electrically coupled to the first coil, a first switch electrically connected to the second coil, a third coil electrically coupled to the first coil, a second switch electrically connected to the third coil, and a control unit configured to control the opening or closing of the first switch and the second switch. The control unit can be configured to close the first switch and open the second switch to form a first path using the first coil and the second coil, and open the first switch and close the second switch to form a second path using the first coil and the third coil.

    ELECTRONIC DEVICE AND COMMUNICATION DEVICE CALIBRATION METHOD OF ELECTRONIC DEVICE

    公开(公告)号:US20210376869A1

    公开(公告)日:2021-12-02

    申请号:US16766105

    申请日:2018-11-23

    Abstract: An electronic device according to various embodiments of the present invention comprises: a housing; a plurality of antennas arranged on or inside the housing; a second communication circuit located inside the housing and electrically connected to the plurality of antennas; a first communication circuit, which is electrically connected to the second communication circuit, and generates a radio frequency (RF) signal or an intermediate frequency (IF) signal so as to transmit the RF or IF signal to the second communication circuit; a memory for storing at least one parameter set to correspond to the characteristic of the second communication circuit; and a control circuit electrically connected to the first communication circuit, wherein the control circuit can be set to transmit a control signal for controlling at least one amplifier included in the second communication circuit to the second communication circuit on the basis of the at least one parameter stored in the memory. Various embodiments of the present invention can be other embodiments.

    AMPLIFIER WITH POST-DISTORTION LINEARIZATION

    公开(公告)号:US20200220505A1

    公开(公告)日:2020-07-09

    申请号:US16734484

    申请日:2020-01-06

    Abstract: A communication method and system for converging a 5th-Generation (5G) communication system for supporting higher data rates beyond a 4th-Generation (4G) system with a technology for Internet of Things (IoT) are provided. The disclosure may be applied to intelligent services based on the 5G communication technology and the IoT-related technology, such as smart home, smart building, smart city, smart car, connected car, health care, digital education, smart retail, security and safety services. An amplifier includes a first transistor for amplifying the fundamental signal applied to a gate terminal. and a second transistor having a source terminal electrically connected to the drain terminal of the first transistor and a drain terminal electrically connected to a bias voltage. The current flowing through the second transistor may be determined based on the current flowing in the drain terminal of the first transistor.

    DIELECTRIC HEATING DEVICE
    8.
    发明申请

    公开(公告)号:US20250081300A1

    公开(公告)日:2025-03-06

    申请号:US18949243

    申请日:2024-11-15

    Abstract: A dielectric heating device is provided. The dielectric heating device includes at least one power source, a load circuit including a plurality of electrodes and at least one inductor, and at least one driving circuit configured to output alternating-current power to the load circuit by using power provided from the at least one power source, wherein the plurality of electrodes include a plurality of top electrodes arranged in substantially the same plane, and one bottom electrode arranged in a plane parallel to the plane formed by the plurality of top electrodes.

    METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE

    公开(公告)号:US20240381616A1

    公开(公告)日:2024-11-14

    申请号:US18636744

    申请日:2024-04-16

    Abstract: A method may include forming a first gate structure on a first region of a substrate, forming a bit line structure on the first gate structure, forming a preliminary contact plug layer including amorphous silicon on the substrate, forming a reflective layer structure on the preliminary contact plug layer, forming a contact plug layer from the preliminary contact plug layer, and forming a capacitor on the contact plug layer. The reflective layer structure may include first and second reflective layers. A refractive index of the second reflective layer may be being greater than that of the first reflective layer. Portions of the second reflective layer may have different thicknesses on first and second regions of the substrate. The forming the contact plug layer may include performing a melting laser annealing (MLA) process on the reflective layer structure to convert the amorphous silicon of the preliminary contact plug layer into polysilicon.

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