公开(公告)号：US11858950B2

公开(公告)日：2024-01-02

申请号：US16909091

申请日：2020-06-23

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Bum Woo Park ,  Hwang Suk Kim ,  Youngchun Kwon ,  Dongseon Lee ,  Dong-Seok Leem ,  Ohkyu Kwon ,  Kwang Hee Lee ,  Younsuk Choi ,  Hyesung Choi

IPC: H01L29/08 ,  C07F5/02 ,  H10K30/80 ,  H10K39/32 ,  H10K85/30

CPC classification number: C07F5/02 ,  H10K30/80 ,  H10K39/32 ,  H10K85/322

Abstract: Disclosed are a compound represented by Chemical Formula 1, a film, a photoelectric diode, an organic sensor, and an electronic device.




In Chemical Formula 1, Ar1 and Ar2, Z, L1, L2, and R1 to R6 are the same as defined in the detailed description.

公开(公告)号：US11623934B2

公开(公告)日：2023-04-11

申请号：US17334106

申请日：2021-05-28

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ohkyu Kwon ,  Hwang Suk Kim ,  Dong-Seok Leem ,  Rae Sung Kim ,  Hyesung Choi

IPC: C07D519/00 ,  H01L51/44 ,  G02B5/22 ,  G02B5/20

Abstract: An infrared absorber includes a compound represented by Chemical Formula In Chemical Formula 1, Ar1, Ar2, X1, L1, L2, R1, R2, R3, and R4 are the same as defined in the detailed description.

公开(公告)号：US10944055B2

公开(公告)日：2021-03-09

申请号：US16100352

申请日：2018-08-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： Norihito Ishii ,  Katsunori Shibata ,  Takkyun Ro ,  Ohkyu Kwon ,  Sang Mo Kim ,  Kyung Bae Park ,  Sung Young Yun ,  Dong-Seok Leem ,  Youn Hee Lim ,  Yong Wan Jin ,  Yeong Suk Choi ,  Jong Won Choi ,  Taejin Choi ,  Hyesung Choi ,  Chul Joon Heo

IPC: H01L51/00 ,  C09K11/06 ,  G01J1/42 ,  C07D421/04 ,  C07D421/14 ,  H01L27/30 ,  C07D305/06 ,  H01L27/28 ,  G21K4/00 ,  H01L51/42 ,  H01L51/44

Abstract: A compound of Chemical Formula 1, and an organic photoelectric device, an image sensor, and an electronic device including the same are disclosed: In Chemical Formula 1, each substituent is the same as described in the detailed description.

公开(公告)号：US11849595B2

公开(公告)日：2023-12-19

申请号：US16944873

申请日：2020-07-31

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hwang Suk Kim ,  Ohkyu Kwon ,  Bum Woo Park ,  Kwang Hee Lee ,  Dong-Seok Leem ,  Hyesung Choi ,  Dongseon Lee

IPC: C07D285/14 ,  C07D293/10 ,  H10K30/20 ,  H10K30/87 ,  H10K85/10

CPC classification number: H10K30/20 ,  C07D285/14 ,  C07D293/10 ,  H10K30/87 ,  H10K85/111

Abstract: A near-infrared absorber includes a compound represented by Chemical Formula 1. A near-infrared absorbing/blocking film, a photoelectric device, an organic sensor, and an electronic device may include the near-infrared absorber.




In Chemical Formula 1, Ar1, Ar2, X1, L1, L2, R1, R2, R3, and R4 are the same as defined in the detailed description.

公开(公告)号：US11158676B2

公开(公告)日：2021-10-26

申请号：US16788857

申请日：2020-02-12

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dong-Seok Leem ,  Rae Sung Kim ,  Hyesung Choi ,  Ohkyu Kwon ,  Changki Kim ,  Hwang Suk Kim ,  Bum Woo Park ,  Jae Jun Lee

IPC: H01L27/30 ,  H01L27/146 ,  H01L51/42 ,  H01L51/50

Abstract: A sensor includes an anode and a cathode, and a near-infrared photoelectric conversion layer between the anode and the cathode. The near-infrared photoelectric conversion layer is configured to absorb light of at least a portion of a near-infrared wavelength spectrum and convert the absorbed light into an electrical signal. The near-infrared photoelectric conversion layer includes a first material having a maximum absorption wavelength in the near-infrared wavelength spectrum and a second material forming a pn junction with the first material and having a wider energy bandgap than an energy bandgap of the first material. The first material is included in the near-infrared photoelectric conversion layer in a smaller amount than the second material.

公开(公告)号：US20200296269A1

公开(公告)日：2020-09-17

申请号：US16536583

申请日：2019-08-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dong-Seok LEEM ,  Gae Hwang Lee ,  Ohkyu Kwon ,  Kwang Hee Lee ,  Hwang Suk Kim ,  Bum Woo Park ,  Hyesung Choi

IPC: H04N5/225 ,  G02F1/17

Abstract: A sensor includes a visible light sensor configured to sense light in a visible wavelength spectrum, a near infra-red light sensor on the visible light sensor and configured to sense light in a near infra-red wavelength spectrum, and an optical filter on the near infra-red light sensor and configured to selectively transmit the light in the visible wavelength spectrum and the light in the near infra-red wavelength spectrum, and an electronic device.

公开(公告)号：US20190051833A1

公开(公告)日：2019-02-14

申请号：US16100352

申请日：2018-08-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： Norihito Ishii ,  Katsunori Shibata ,  Takkyun Ro ,  Ohkyu Kwon ,  Sang Mo Kim ,  Kyung Bae Park ,  Sung Young Yun ,  Dong-Seok Leem ,  Youn Hee Lim ,  Yong Wan Jin ,  Yeong Suk Choi ,  Jong Won Choi ,  Taejin Choi ,  Hyesung Choi ,  Chul Joon Heo

IPC: H01L51/00 ,  H01L27/28 ,  H01L51/44 ,  C07D305/06

Abstract: A compound of Chemical Formula 1, and an organic photoelectric device, an image sensor, and an electronic device including the same are disclosed: In Chemical Formula 1, each substituent is the same as described in the detailed description.

公开(公告)号：US12178056B2

公开(公告)日：2024-12-24

申请号：US17509451

申请日：2021-10-25

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dong-Seok Leem ,  Rae Sung Kim ,  Ohkyu Kwon ,  Changki Kim ,  Insun Park

IPC: H10K30/10 ,  H10K30/20 ,  H10K30/81 ,  H10K50/11 ,  H10K85/60 ,  H10K101/30 ,  H10K101/40

Abstract: A sensor includes first and second electrodes, and an infrared photoelectric conversion layer between the first and second electrodes, the infrared photoelectric conversion layer being configured to absorb light in at least a portion of an infrared wavelength spectrum and convert the absorbed light to an electrical signal. The infrared photoelectric conversion layer includes a first material having a maximum absorption wavelength in an infrared wavelength spectrum, a second material forming a pn junction with the first material, and a third material having an energy band gap greater than the energy band gap of the first material by greater than or equal to about 1.0 eV. The first material, the second material, and the third material are different from each other, and each of the first material, the second material, and the third material is a non-polymeric material.

公开(公告)号：US11849597B2

公开(公告)日：2023-12-19

申请号：US17485737

申请日：2021-09-27

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dong-Seok Leem ,  Rae Sung Kim ,  Hyesung Choi ,  Ohkyu Kwon ,  Changki Kim ,  Hwang Suk Kim ,  Bum Woo Park ,  Jae Jun Lee

IPC: H01L27/146 ,  H10K39/32 ,  H10K30/20 ,  H10K30/30 ,  H10K50/11 ,  H10K101/40

CPC classification number: H10K39/32 ,  H01L27/14669 ,  H10K30/20 ,  H10K30/30 ,  H10K50/11 ,  H10K2101/40

Abstract: A sensor includes an anode and a cathode, and a near-infrared photoelectric conversion layer between the anode and the cathode. The near-infrared photoelectric conversion layer is configured to absorb light of at least a portion of a near-infrared wavelength spectrum and convert the absorbed light into an electrical signal. The near-infrared photoelectric conversion layer includes a first material having a maximum absorption wavelength in the near-infrared wavelength spectrum and a second material forming a pn junction with the first material and having a wider energy bandgap than an energy bandgap of the first material. The first material is included in the near-infrared photoelectric conversion layer in a smaller amount than the second material.

公开(公告)号：US11793072B2

公开(公告)日：2023-10-17

申请号：US18150450

申请日：2023-01-05

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jisoo Shin ,  Yeong Suk Choi ,  Katsunori Shibata ,  Taejin Choi ,  Sungyoung Yun ,  Ohkyu Kwon ,  Sangmo Kim ,  Hiromasa Shibuya ,  Gae Hwang Lee ,  Yong Wan Jin ,  Hyesung Choi ,  Chul Baik ,  Hyerim Hong

IPC: H10K85/60 ,  C07D421/04 ,  C07F7/08 ,  C07D421/14 ,  C07F7/30 ,  C07D409/06 ,  C07D421/06 ,  C07F11/00 ,  H10K30/30 ,  H10K39/32 ,  H10K85/30 ,  H10K85/40

CPC classification number: H10K85/657 ,  C07D409/06 ,  C07D421/04 ,  C07D421/06 ,  C07D421/14 ,  C07F7/0816 ,  C07F7/30 ,  C07F11/00 ,  H10K30/30 ,  H10K39/32 ,  H10K85/30 ,  H10K85/40 ,  H10K85/615 ,  H10K85/636 ,  H10K85/649 ,  H10K85/654 ,  H10K85/655

Abstract: A compound of Chemical Formula 1, and a photoelectric device, an image sensor, and an electronic device including the same are disclosed:




In Chemical Formula 1, each substituent is the same as defined in the detailed description.