公开(公告)号：US20180151395A1

公开(公告)日：2018-05-31

申请号：US15819550

申请日：2017-11-21

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： MIHYUN PARK ,  JUNG-MIN OH ,  INGI KIM ,  SEOHYUN KIM ,  TAE-HONG KIM ,  HYOSAN LEE

IPC: H01L21/67 ,  H01L21/02 ,  H01L29/66 ,  H01L21/28 ,  H01L21/3105 ,  C11D1/12 ,  C11D3/43

CPC classification number: H01L21/67051 ,  C11D1/12 ,  C11D1/146 ,  C11D1/29 ,  C11D3/201 ,  C11D3/2017 ,  C11D3/2044 ,  C11D3/2068 ,  C11D3/28 ,  C11D3/32 ,  C11D3/3445 ,  C11D3/43 ,  C11D11/0047 ,  H01L21/02065 ,  H01L21/02074 ,  H01L21/28123 ,  H01L21/31053 ,  H01L21/67017 ,  H01L29/66545 ,  H01L29/66803 ,  H01L29/66818

Abstract: A cleaning composition includes a surfactant, deionized (DI) water, and an organic solvent. The surfactant has a concentration of from about 0.03 M to about 0.003 M. A cleaning apparatus includes a chuck that receives a substrate, a nozzle for providing the cleaning composition onto the substrate. The cleaning apparatus further includes a chemical solution supply unit supplying the cleaning composition to the nozzle. The chemical solution supply unit mixes the cleaning composition to generate cleaning particles. The cleaning composition includes a surfactant, deionized (DI) water, and an organic solvent. The surfactant has a concentration of from about 0.03 M to about 0.003 M. A method for manufacturing a semiconductor device includes processing a substrate, forming an interlayer insulating layer, polishing an interlayer insulating layer, and providing a cleaning composition onto the interlayer insulating layer to remove first particles.