公开(公告)号：US20180112330A1

公开(公告)日：2018-04-26

申请号：US15472467

申请日：2017-03-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： Mi-Hyun KIM ,  Sam-Mook KANG ,  Jun-Youn KIM ,  Young-Jo TAK ,  Young-Soo PARK

IPC: C30B25/18 ,  H01L21/02 ,  H01L21/78 ,  C30B25/10 ,  C30B29/40 ,  C30B29/06

CPC classification number: C30B25/186 ,  C30B25/02 ,  C30B25/10 ,  C30B25/16 ,  C30B25/183 ,  C30B29/06 ,  C30B29/406 ,  C30B33/12 ,  H01L21/02381 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02658 ,  H01L21/7806

Abstract: In a method of manufacturing a GaN substrate, a capping layer may be formed on a first surface of a silicon substrate. A buffer layer may be formed on a second surface of the silicon substrate. The second surface may be opposite the first surface. A GaN substrate may be formed on the buffer layer by performing a hydride vapor phase epitaxy (HVPE) process. The capping layer and the silicon substrate may be removed.

公开(公告)号：US20130099199A1

公开(公告)日：2013-04-25

申请号：US13657357

申请日：2012-10-22

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Nam-Goo CHA ,  Geon-Wook YOO ,  Han-Kyu SEONG ,  Sam-Mook KANG ,  Hun-Jae CHUNG

IPC: H01L33/06

CPC classification number: H01L33/18 ,  H01L33/007 ,  H01L33/08 ,  H01L33/24 ,  H01L33/385 ,  H01L33/44

Abstract: A nanorod light emitting device and a method of manufacturing the same. The nanorod light emitting device may include at least one nitride semiconductor layer, light emitting nanorods formed on the nitride semiconductor layer and spaced apart from each other, and a first filling layer, a conductive layer, and a second filling layer formed in spaces between the light emitting nanorods.

Abstract translation: 纳米棒发光器件及其制造方法。 纳米棒发光器件可以包括至少一个氮化物半导体层，形成在氮化物半导体层上并彼此间隔开的发光纳米棒，以及第一填充层，导电层和形成在第二填充层之间的第二填充层 发光纳米棒。

公开(公告)号：US20180166302A1

公开(公告)日：2018-06-14

申请号：US15611279

申请日：2017-06-01

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sam-Mook KANG ,  Mi-Hyun KIM ,  Jun-Youn KIM ,  Young-Jo TAK

IPC: H01L21/67 ,  H01L21/02 ,  H01L21/3065 ,  H01L21/308

CPC classification number: H01L21/67069 ,  C23C16/01 ,  C23C16/303 ,  C23C16/34 ,  C23C16/345 ,  H01L21/02381 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02658 ,  H01L21/67109

Abstract: In a method of forming a nitride semiconductor substrate, a nitride semiconductor substrate may be formed on a silicon substrate. A protection layer may be formed to cover a surface of the nitride semiconductor substrate. The silicon substrate may be removed by an etching process. The protection layer may limit and/or prevent the nitride semiconductor substrate from being etched during the etching process.

公开(公告)号：US20130112944A1

公开(公告)日：2013-05-09

申请号：US13672019

申请日：2012-11-08

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Nam-Goo CHA ,  Geon-Wook YOO ,  Han-Kyu SEONG ,  Sam-Mook KANG ,  Hun-Jae CHUNG

IPC: H01L33/06 ,  B82Y40/00 ,  B82Y99/00

CPC classification number: H01L33/24 ,  B82Y20/00 ,  B82Y40/00 ,  H01L33/08 ,  H01L33/18 ,  H01L33/387 ,  Y10S977/932

Abstract: A nanorod light emitting device includes at least one nitride semiconductor layer, a mask layer, multiple light emitting nanorods, nanoclusters, a filling layer disposed on the nanoclusters, a first electrode and connection parts. The mask layer is disposed on the nitride semiconductor layer and has through holes. The light emitting nanorods are disposed in and extend vertically from the through holes. The nanoclusters are spaced apart from each other. Each of the nanoclusters has a conductor and covers a group of light emitting nanorods, among the multiple light emitting nanorods, with the conductor. The first electrode is disposed on the filling layer and has a grid pattern. The connection parts connect the conductor and the first electrode.

Abstract translation: 纳米棒发光器件包括至少一个氮化物半导体层，掩模层，多个发光纳米棒，纳米团簇，设置在纳米团簇上的填充层，第一电极和连接部分。 掩模层设置在氮化物半导体层上并具有通孔。 发光纳米棒设置在通孔中并从通孔垂直延伸。 纳米团簇彼此间隔开。 每个纳米团簇具有导体并且覆盖在多个发光纳米棒中的一组发光纳米棒与导体。 第一电极设置在填充层上并具有网格图案。 连接部分连接导体和第一电极。