公开(公告)号：US20150123140A1

公开(公告)日：2015-05-07

申请号：US14532921

申请日：2014-11-04

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jun-Youn KIM ,  Jae-Kyun KIM ,  Joo-Sung KIM ,  Young-Soo PARK ,  Young-Jo TAK

IPC: H01L33/00 ,  H01L33/32 ,  H01L33/18 ,  H01L33/12

CPC classification number: H01L21/02458 ,  C30B25/183 ,  C30B29/403 ,  H01L21/02381 ,  H01L21/0243 ,  H01L21/02433 ,  H01L21/02507 ,  H01L21/0254 ,  H01L21/02609 ,  H01L21/02658 ,  H01L33/007 ,  H01L33/12

Abstract: Provided are a semipolar nitride semiconductor structure and a method of manufacturing the same. The semipolar nitride semiconductor structure includes a silicon substrate having an Si(11k) surface satisfying 7≦k≦13; and a nitride semiconductor layer formed on the silicon substrate. The nitride semiconductor layer has a semipolar characteristic in which a polarization field is approximately 0.

Abstract translation: 提供一种半极性氮化物半导体结构及其制造方法。 半极性氮化物半导体结构包括Si（11k）表面满足7＆lt; nlE; k＆lt; 11; 13的硅衬底; 以及形成在硅衬底上的氮化物半导体层。 氮化物半导体层具有偏极化场近似为0的半极性特性。

公开(公告)号：US20180112330A1

公开(公告)日：2018-04-26

申请号：US15472467

申请日：2017-03-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： Mi-Hyun KIM ,  Sam-Mook KANG ,  Jun-Youn KIM ,  Young-Jo TAK ,  Young-Soo PARK

IPC: C30B25/18 ,  H01L21/02 ,  H01L21/78 ,  C30B25/10 ,  C30B29/40 ,  C30B29/06

CPC classification number: C30B25/186 ,  C30B25/02 ,  C30B25/10 ,  C30B25/16 ,  C30B25/183 ,  C30B29/06 ,  C30B29/406 ,  C30B33/12 ,  H01L21/02381 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02658 ,  H01L21/7806

Abstract: In a method of manufacturing a GaN substrate, a capping layer may be formed on a first surface of a silicon substrate. A buffer layer may be formed on a second surface of the silicon substrate. The second surface may be opposite the first surface. A GaN substrate may be formed on the buffer layer by performing a hydride vapor phase epitaxy (HVPE) process. The capping layer and the silicon substrate may be removed.

公开(公告)号：US20180166302A1

公开(公告)日：2018-06-14

申请号：US15611279

申请日：2017-06-01

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sam-Mook KANG ,  Mi-Hyun KIM ,  Jun-Youn KIM ,  Young-Jo TAK

IPC: H01L21/67 ,  H01L21/02 ,  H01L21/3065 ,  H01L21/308

CPC classification number: H01L21/67069 ,  C23C16/01 ,  C23C16/303 ,  C23C16/34 ,  C23C16/345 ,  H01L21/02381 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02658 ,  H01L21/67109

Abstract: In a method of forming a nitride semiconductor substrate, a nitride semiconductor substrate may be formed on a silicon substrate. A protection layer may be formed to cover a surface of the nitride semiconductor substrate. The silicon substrate may be removed by an etching process. The protection layer may limit and/or prevent the nitride semiconductor substrate from being etched during the etching process.