公开(公告)号：US20230163087A1

公开(公告)日：2023-05-25

申请号：US17944430

申请日：2022-09-14

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Minki Kim ,  Seungduk Baek ,  Won IL Lee

IPC: H01L23/00 ,  H01L25/065

CPC classification number: H01L24/05 ,  H01L25/0657 ,  H01L24/08 ,  H01L2225/06527 ,  H01L2225/06544 ,  H01L2224/08145 ,  H01L2924/3512 ,  H01L2224/05541 ,  H01L2224/05551 ,  H01L2224/05557 ,  H01L2224/05558 ,  H01L2224/05576 ,  H01L2224/05647 ,  H01L2224/05687 ,  H01L2224/05009 ,  H01L2224/05011 ,  H01L2224/05017 ,  H01L2224/05018 ,  H01L2224/05025 ,  H01L2224/05076 ,  H01L2224/05083 ,  H01L2224/05166 ,  H01L2224/05181 ,  H01L2224/05187 ,  H01L2224/0239 ,  H01L2224/02331 ,  H01L2224/02381 ,  H01L2924/1434 ,  H01L2924/1431

Abstract: A semiconductor package includes: a semiconductor substrate; a through electrode that penetrates the semiconductor substrate; a first pad disposed on the through electrode; and a dielectric structure disposed on the semiconductor substrate, wherein a lower portion of the dielectric structure at least partially surrounds the through electrode, wherein an upper portion of the dielectric structure at least partially surrounds the first pad, wherein the dielectric structure includes: a first dielectric pattern; an etch stop pattern disposed on the first dielectric pattern; and a second dielectric pattern spaced apart from the first dielectric pattern by the etch stop pattern, wherein the first pad is in contact with the through electrode, the first dielectric pattern, the etch stop pattern, and second dielectric pattern, and wherein a top surface of the through electrode is at a level higher than a level of a top surface of the first dielectric pattern.