公开(公告)号：US09847249B2

公开(公告)日：2017-12-19

申请号：US14533846

申请日：2014-11-05

Applicant: SANDISK TECHNOLOGIES LLC

Inventor： Yuji Takahashi ,  Takuya Futase ,  Noritaka Fukuo ,  Katsuo Yamada ,  Tomoyasu Kakegawa

IPC: H01L21/02 ,  H01L21/311 ,  H01L21/768 ,  H01L27/1157 ,  H01L27/11524

CPC classification number: H01L21/7682 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/022 ,  H01L21/02211 ,  H01L21/02266 ,  H01L21/02271 ,  H01L21/76802 ,  H01L21/76829 ,  H01L27/11524 ,  H01L27/1157 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A stack of layers is formed that includes first, second, and third dielectric layers. Contact plugs are then formed extending through the stack. Then a fourth dielectric layer is formed over the stack and contact plugs and trenches are formed through the fourth and third dielectric layers, extending to the second dielectric layer and exposing contact plugs.

公开(公告)号：US20220352093A1

公开(公告)日：2022-11-03

申请号：US17806592

申请日：2022-06-13

Applicant: SANDISK TECHNOLOGIES LLC

Inventor： Katsuo Yamada ,  Kakeru Tamai ,  Akira Iwasaki ,  Akira Fukunaga ,  Koichi Matsuno

IPC: H01L23/00 ,  H01L27/11556 ,  H01L27/11582 ,  H01L27/11597

Abstract: A three-dimensional memory device includes an alternating stack of insulating layers and electrically conductive layers, memory opening fill structures located within a respective memory opening vertically extending through the alternating stack in a memory array region, and support pillar structures vertically extending through the alternating stack. Each of the memory opening fill structures includes a respective vertical semiconductor channel and a respective memory film that contacts each layer within the alternating stack. Each of the support pillar structures includes a respective dummy vertical semiconductor channel, a respective dummy memory film, and at least one respective dielectric spacer material portion laterally surrounding the respective dummy memory film and interposed between the electrically conductive layers and the respective dummy memory film.

公开(公告)号：US10115459B1

公开(公告)日：2018-10-30

申请号：US15720556

申请日：2017-09-29

Applicant: SANDISK TECHNOLOGIES LLC

Inventor： Katsuo Yamada ,  Tomoyasu Kakegawa ,  Peter Rabkin ,  Jayavel Pachamuthu ,  Mohan Dunga ,  Masaaki Higashitani

IPC: G11C16/06 ,  G11C13/00 ,  H01B7/00 ,  H01B1/02 ,  B23P19/04 ,  B05D1/26 ,  H01B3/16

Abstract: An opening is formed through at least one dielectric material layer. A first metallic liner is formed on a bottom surface and sidewalls of the opening by depositing a first metallic material. A metal portion including an elemental metal or an intermetallic alloy of at least two elemental metals is formed on the first metallic liner. A second metallic liner including a second metallic material is formed directly on a top surface of the metal portion. The first metallic material and the second metallic material differ in composition. The first metallic liner and the second metallic liner contact an entirety of all surfaces of the metal portion. The first and second metallic liners can protect the metal portion from a subsequently deposited dielectric material layer, which may be formed as an air-gap dielectric layer after recessing the at least one dielectric material layer.

公开(公告)号：US09799527B2

公开(公告)日：2017-10-24

申请号：US14519740

申请日：2014-10-21

Applicant: SANDISK TECHNOLOGIES LLC

Inventor： Katsuo Yamada ,  Yuji Takahashi ,  Takuya Futase ,  Noritaka Fukuo ,  Tomoyasu Kakegawa

IPC: H01L29/06 ,  H01L21/308 ,  H01L27/11521 ,  H01L21/762 ,  H01L21/28 ,  H01L21/02

CPC classification number: H01L21/3083 ,  H01L21/02255 ,  H01L21/28273 ,  H01L21/76224 ,  H01L27/11521

Abstract: Isolation is provided by forming a first trench, depositing a cover layer on the bottom and sidewalls of the first trench, selectively removing the cover layer from the bottom and forming a second trench extending from the bottom of the first trench. The second trench is then substantially filled by thermal oxide formed by oxidation and the first trench is subsequently filled with a deposited dielectric.