公开(公告)号：US20200234778A1

公开(公告)日：2020-07-23

申请号：US16840156

申请日：2020-04-03

Applicant: SANDISK TECHNOLOGIES LLC

Inventor： Dengtao Zhao ,  Peng Zhang ,  Nan Lu ,  Deepanshu Dutta

IPC: G11C16/34 ,  G11C16/12 ,  G11C8/08 ,  G11C11/408 ,  G11C16/04

Abstract: Program disturb is a condition that includes the unintended programming of a memory cell while performing a programming process for other memory cells. Such unintended programming can cause an error in the data being stored. In some cases, program disturb can result from electrons trapped in the channel being accelerated from one side of a selected word line to another side of the selected word line and redirected into the selected word line. To prevent such program disturb, it is proposed to open the channel from one side of a selected word line to the other side of the selected word line after a sensing operation for program verify and prior to a subsequent programming voltage being applied.

公开(公告)号：US20180308556A1

公开(公告)日：2018-10-25

申请号：US15495178

申请日：2017-04-24

Applicant: SanDisk Technologies LLC

Inventor： Ashish Baraskar ,  Liang Pang ,  Yingda Dong ,  Ching-Huang Lu ,  Nan Lu ,  Hong-Yan Chen

IPC: G11C16/34 ,  G11C16/28 ,  G11C16/16 ,  G11C16/04 ,  G11C16/32 ,  G11C16/08

CPC classification number: G11C16/3427 ,  G11C16/0483 ,  G11C16/08 ,  G11C16/16 ,  G11C16/28 ,  G11C16/32 ,  G11C16/3459

Abstract: A memory device and associated techniques to reduce charge loss of memory cells. In one aspect, a charge loss countermeasure is performed if a word line selected for programming is adjacent to a dummy word line. The countermeasure can involve programming the dummy memory cells through injection disturb. In one approach, the timing is adjusted for the voltages on the selected word line and the dummy word line at the end of a program voltage. The selected word line voltage can be decreased more quickly, or the dummy word line voltage can be decreased more slowly. The decrease of the dummy word line voltage can also be delayed. Another approach involves elevating the bit line voltage during the decrease of the selected word line voltage. The bit line voltage can be a function of the assigned data state of a selected cell.

公开(公告)号：US10832785B2

公开(公告)日：2020-11-10

申请号：US16840156

申请日：2020-04-03

Applicant: SANDISK TECHNOLOGIES LLC

Inventor： Dengtao Zhao ,  Peng Zhang ,  Nan Lu ,  Deepanshu Dutta

IPC: G11C16/34 ,  G11C16/12 ,  G11C11/408 ,  G11C16/04 ,  G11C8/08

Abstract: Program disturb is a condition that includes the unintended programming of a memory cell while performing a programming process for other memory cells. Such unintended programming can cause an error in the data being stored. In some cases, program disturb can result from electrons trapped in the channel being accelerated from one side of a selected word line to another side of the selected word line and redirected into the selected word line. To prevent such program disturb, it is proposed to open the channel from one side of a selected word line to the other side of the selected word line after a sensing operation for program verify and prior to a subsequent programming voltage being applied.

公开(公告)号：US10580504B2

公开(公告)日：2020-03-03

申请号：US16002836

申请日：2018-06-07

Applicant: SANDISK TECHNOLOGIES LLC

Inventor： Dengtao Zhao ,  Peng Zhang ,  Nan Lu ,  Deepanshu Dutta

IPC: G11C16/04 ,  G11C16/34 ,  G11C16/10 ,  G11C16/08 ,  H01L27/11582 ,  H01L27/1157 ,  H01L27/11565 ,  G11C11/56

Abstract: Program disturb is a condition that includes the unintended programming of a memory cell while performing a programming process for other memory cells. Such unintended programming can cause an error in the data being stored. In some cases, program disturb can result from electrons trapped in the channel being accelerated from one side of a selected word line to another side of the selected word line and redirected into the selected word line. To prevent such program disturb, it is proposed to open the channel from one side of a selected word line to the other side of the selected word line after a sensing operation for program verify and prior to a subsequent programming voltage being applied.

公开(公告)号：US10121552B1

公开(公告)日：2018-11-06

申请号：US15495178

申请日：2017-04-24

Applicant: SanDisk Technologies LLC

Inventor： Ashish Baraskar ,  Liang Pang ,  Yingda Dong ,  Ching-Huang Lu ,  Nan Lu ,  Hong-Yan Chen

IPC: G11C16/04 ,  G11C16/34 ,  G11C16/28 ,  G11C16/16 ,  G11C16/32 ,  G11C16/08

Abstract: A memory device and associated techniques to reduce charge loss of memory cells. In one aspect, a charge loss countermeasure is performed if a word line selected for programming is adjacent to a dummy word line. The countermeasure can involve programming the dummy memory cells through injection disturb. In one approach, the timing is adjusted for the voltages on the selected word line and the dummy word line at the end of a program voltage. The selected word line voltage can be decreased more quickly, or the dummy word line voltage can be decreased more slowly. The decrease of the dummy word line voltage can also be delayed. Another approach involves elevating the bit line voltage during the decrease of the selected word line voltage. The bit line voltage can be a function of the assigned data state of a selected cell.

公开(公告)号：US20190378581A1

公开(公告)日：2019-12-12

申请号：US16002836

申请日：2018-06-07

Applicant: SANDISK TECHNOLOGIES LLC

Inventor： Dengtao Zhao ,  Peng Zhang ,  Nan Lu ,  Deepanshu Dutta

IPC: G11C16/34 ,  G11C16/10 ,  G11C16/08 ,  G11C16/04 ,  H01L27/11582 ,  H01L27/1157

Abstract: Program disturb is a condition that includes the unintended programming of a memory cell while performing a programming process for other memory cells. Such unintended programming can cause an error in the data being stored. In some cases, program disturb can result from electrons trapped in the channel being accelerated from one side of a selected word line to another side of the selected word line and redirected into the selected word line. To prevent such program disturb, it is proposed to open the channel from one side of a selected word line to the other side of the selected word line after a sensing operation for program verify and prior to a subsequent programming voltage being applied.

公开(公告)号：US09971530B1

公开(公告)日：2018-05-15

申请号：US15347552

申请日：2016-11-09

Applicant: SanDisk Technologies LLC

Inventor： Nian Niles Yang ,  Grishma Shah ,  Philip Reusswig ,  Sahil Sharma ,  Nan Lu

IPC: G06F3/06 ,  G11C16/28 ,  G11C16/10 ,  G11C16/16 ,  G11C16/34 ,  G06F11/00 ,  G06F11/30

CPC classification number: G06F3/0619 ,  G06F3/064 ,  G06F3/0653 ,  G06F3/0679 ,  G06F11/004 ,  G06F11/3034 ,  G06F11/3058 ,  G06F2201/81 ,  G11C7/04 ,  G11C16/0483 ,  G11C16/10 ,  G11C16/16 ,  G11C16/26 ,  G11C16/28 ,  G11C16/3459

Abstract: A storage system and method for temperature throttling for block reading are provided. In one embodiment, a storage system is provided comprising a memory comprising a plurality of word lines and a controller in communication with the memory. The controller is configured to determine whether a temperature of the memory is above a first threshold temperature; and in response to determining that the temperature of the memory is above the first threshold temperature: apply a voltage to the plurality of word lines; and after the voltage has been applied, read one of the plurality of word lines. Other embodiments are possible, and each of the embodiments can be used alone or together in combination.

公开(公告)号：US20180129431A1

公开(公告)日：2018-05-10

申请号：US15347552

申请日：2016-11-09

Applicant: SanDisk Technologies LLC

Inventor： Nian Niles Yang ,  Grishma Shah ,  Philip Reusswig ,  Sahil Sharma ,  Nan Lu

IPC: G06F3/06 ,  G11C16/28 ,  G11C16/10 ,  G11C16/16 ,  G11C16/34 ,  G06F11/00 ,  G06F11/30

CPC classification number: G06F3/0619 ,  G06F3/064 ,  G06F3/0653 ,  G06F3/0679 ,  G06F11/004 ,  G06F11/3034 ,  G06F11/3058 ,  G06F2201/81 ,  G11C7/04 ,  G11C16/0483 ,  G11C16/10 ,  G11C16/16 ,  G11C16/26 ,  G11C16/28 ,  G11C16/3459

Abstract: A storage system and method for temperature throttling for block reading are provided. In one embodiment, a storage system is provided comprising a memory comprising a plurality of word lines and a controller in communication with the memory. The controller is configured to determine whether a temperature of the memory is above a first threshold temperature; and in response to determining that the temperature of the memory is above the first threshold temperature: apply a voltage to the plurality of word lines; and after the voltage has been applied, read one of the plurality of word lines. Other embodiments are possible, and each of the embodiments can be used alone or together in combination.