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公开(公告)号：US20180046231A1
公开(公告)日：2018-02-15
申请号：US15237139
申请日：2016-08-15
Applicant: SanDisk Technologies LLC
Inventor： Deepak Raghu , Pao-Ling Koh , Philip Reusswig , Chris Nga Yee Yip , Jun Wan , Yan Li
CPC classification number: G06F1/206 , G06F1/3225 , G06F1/3275 , G06F3/0616 , G06F3/0653 , G06F3/0688
Abstract: A storage device with a memory may modify throttling to reduce cross temperature effects. The decision to throttle may be based on a memory device temperature (i.e. temperature throttling) or may be based on the memory device's health, usage, or performance (e.g. hot count or bit error rate). Temperature throttling may be implemented that considers the memory device's health, usage, or performance (e.g. hot count or bit error rate). Likewise, throttling based on the memory device's health, usage, or performance may utilize the memory device's temperature to optimize throttling time. For example, a test mode matrix (TMM) may be modified to depend on temperature.
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公开(公告)号：US09741444B2
公开(公告)日：2017-08-22
申请号：US15483169
申请日：2017-04-10
Applicant: SanDisk Technologies LLC
Inventor： Philip Reusswig , Harish Singidi , Deepak Raghu , Gautam Dusija , Pao-Ling Koh , Chris Avila
CPC classification number: G11C16/3431 , G06F11/1072 , G11C11/5642 , G11C16/26 , G11C16/3422 , G11C16/349 , G11C29/52
Abstract: Methods and systems are provided where non-volatile solid state memory may include selected memory cells coupled to a selected word line and proxy memory cells coupled to a proxy word line. The selected memory cells may be non-adjacent to the proxy memory cells and be selected for a read operation. A read proxy voltage may be applied to the proxy word line when data is read from the selected memory cells. A read disturb may be determined based on a difference between a predetermined value stored in the proxy memory cells and a value read from the proxy memory cells.
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公开(公告)号：US09971530B1
公开(公告)日：2018-05-15
申请号：US15347552
申请日：2016-11-09
Applicant: SanDisk Technologies LLC
Inventor： Nian Niles Yang , Grishma Shah , Philip Reusswig , Sahil Sharma , Nan Lu
CPC classification number: G06F3/0619 , G06F3/064 , G06F3/0653 , G06F3/0679 , G06F11/004 , G06F11/3034 , G06F11/3058 , G06F2201/81 , G11C7/04 , G11C16/0483 , G11C16/10 , G11C16/16 , G11C16/26 , G11C16/28 , G11C16/3459
Abstract: A storage system and method for temperature throttling for block reading are provided. In one embodiment, a storage system is provided comprising a memory comprising a plurality of word lines and a controller in communication with the memory. The controller is configured to determine whether a temperature of the memory is above a first threshold temperature; and in response to determining that the temperature of the memory is above the first threshold temperature: apply a voltage to the plurality of word lines; and after the voltage has been applied, read one of the plurality of word lines. Other embodiments are possible, and each of the embodiments can be used alone or together in combination.
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公开(公告)号：US20180129431A1
公开(公告)日：2018-05-10
申请号：US15347552
申请日：2016-11-09
Applicant: SanDisk Technologies LLC
Inventor： Nian Niles Yang , Grishma Shah , Philip Reusswig , Sahil Sharma , Nan Lu
CPC classification number: G06F3/0619 , G06F3/064 , G06F3/0653 , G06F3/0679 , G06F11/004 , G06F11/3034 , G06F11/3058 , G06F2201/81 , G11C7/04 , G11C16/0483 , G11C16/10 , G11C16/16 , G11C16/26 , G11C16/28 , G11C16/3459
Abstract: A storage system and method for temperature throttling for block reading are provided. In one embodiment, a storage system is provided comprising a memory comprising a plurality of word lines and a controller in communication with the memory. The controller is configured to determine whether a temperature of the memory is above a first threshold temperature; and in response to determining that the temperature of the memory is above the first threshold temperature: apply a voltage to the plurality of word lines; and after the voltage has been applied, read one of the plurality of word lines. Other embodiments are possible, and each of the embodiments can be used alone or together in combination.
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公开(公告)号：US09711231B1
公开(公告)日：2017-07-18
申请号：US15191898
申请日：2016-06-24
Applicant: SanDisk Technologies LLC
Inventor： Chris Yip , Philip Reusswig , Nian Niles Yang , Grishma Shah , Abuzer Azo Dogan , Biswajit Ray , Mohan Dunga , Joanna Lai , Changyuan Chen
CPC classification number: G11C16/28 , G06F11/1048 , G11C11/5642 , G11C16/0483 , G11C16/30 , G11C16/32
Abstract: Techniques are provided for improving the accuracy of read operations of memory cells, where the threshold voltage of a memory cell can shift depending on when the read operation occurs. In one aspect, read voltages are set and optimized based on a time period since a last sensing operation. A timing device such as an n-bit digital counter may be provided for each block of memory cells to track the time. The counter is set to all 1's when the device is powered on. When a sensing operation occurs, the counter is periodically incremented based on a clock. When a next read operation occurs, the value of the counter is cross-referenced to an optimal set of read voltage shifts. Each block of cells may have its own counter, where the counters are incremented using a local or global clock.
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Patent Agency Ranking
公开(公告)号：US10102920B2
公开(公告)日：2018-10-16
申请号：US15237196
申请日：2016-08-15
Applicant: SanDisk Technologies LLC
Inventor： Philip Reusswig , Deepak Raghu , Zelei Guo , Chris Nga Yee Yip
Abstract: A storage device with a memory may utilize an optimized read retry operation. A read retry table includes a number of read retry cases with updated read thresholds. The read thresholds in the read retry table may be used to avoid errors caused by shifting of charge levels. The optimization of read retry includes weighting or reordering of the read retry cases in the read retry table. The selection of a read retry case (and corresponding read thresholds) are determined based on the weighting or reordering.
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公开(公告)号：US10007311B2
公开(公告)日：2018-06-26
申请号：US15237139
申请日：2016-08-15
Applicant: SanDisk Technologies LLC
Inventor： Deepak Raghu , Pao-Ling Koh , Philip Reusswig , Chris Nga Yee Yip , Jun Wan , Yan Li
CPC classification number: G06F1/206 , G06F1/3225 , G06F1/3275 , G06F3/0616 , G06F3/0653 , G06F3/0688 , Y02D10/14
Abstract: A storage device with a memory may modify throttling to reduce cross temperature effects. The decision to throttle may be based on a memory device temperature (i.e. temperature throttling) or may be based on the memory device's health, usage, or performance (e.g. hot count or bit error rate). Temperature throttling may be implemented that considers the memory device's health, usage, or performance (e.g. hot count or bit error rate). Likewise, throttling based on the memory device's health, usage, or performance may utilize the memory device's temperature to optimize throttling time. For example, a test mode matrix (TMM) may be modified to depend on temperature.
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公开(公告)号：US20180046527A1
公开(公告)日：2018-02-15
申请号：US15237196
申请日：2016-08-15
Applicant: SanDisk Technologies LLC
Inventor： Philip Reusswig , Deepak Raghu , Zelei Guo , Chris Nga Yee Yip
CPC classification number: G06F11/076 , G06F11/1435 , G11C11/5642 , G11C16/26 , G11C29/021 , G11C29/028 , G11C29/50004 , G11C2029/5004
Abstract: A storage device with a memory may utilize an optimized read retry operation. A read retry table includes a number of read retry cases with updated read thresholds. The read thresholds in the read retry table may be used to avoid errors caused by shifting of charge levels. The optimization of read retry includes weighting or reordering of the read retry cases in the read retry table. The selection of a read retry case (and corresponding read thresholds) are determined based on the weighting or reordering.
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9.发明授权公开(公告)号：US10339000B2
公开(公告)日：2019-07-02
申请号：US15264279
申请日：2016-09-13
Applicant: SanDisk Technologies LLC
Inventor： Nian Niles Yang , Grishma Shah , Philip Reusswig
Abstract: A storage system and method for reducing XOR recovery time are provided. In one embodiment, a storage system is provides comprising a memory and a controller. The controller is configured to generate a first exclusive-or (XOR) parity for pages of data written to the memory; after the first XOR parity has been generated, determine that there is at least one page of invalid data in the pages of data written to the memory; and generate a second XOR parity for the pages of data that excludes the at least one page of invalid data, wherein the second XOR parity is generated by performing an XOR operation using the first XOR parity and the at least one page of invalid data as inputs. Other embodiments are possible, and each of the embodiments can be used alone or together in combination.
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公开(公告)号：US20180074891A1
公开(公告)日：2018-03-15
申请号：US15264279
申请日：2016-09-13
Applicant: SanDisk Technologies LLC
Inventor： Nian Niles Yang , Grishma Shah , Philip Reusswig
CPC classification number: G06F11/1068 , G06F3/0626 , G06F3/0652 , G06F11/08 , G06F11/1004 , G06F11/1008 , G06F11/1032 , G06F11/1056 , G06F12/023 , G06F12/0238 , G06F12/0246 , G06F12/0253 , G06F2212/70 , G06F2212/702 , G06F2212/7205 , G11C29/52 , H03M13/13 , H03M13/2906 , H03M13/2918 , H03M13/2942 , H03M13/373 , H03M13/3761
Abstract: A storage system and method for reducing XOR recovery time are provided. In one embodiment, a storage system is provides comprising a memory and a controller. The controller is configured to generate a first exclusive-or (XOR) parity for pages of data written to the memory; after the first XOR parity has been generated, determine that there is at least one page of invalid data in the pages of data written to the memory; and generate a second XOR parity for the pages of data that excludes the at least one page of invalid data, wherein the second XOR parity is generated by performing an XOR operation using the first XOR parity and the at least one page of invalid data as inputs. Other embodiments are possible, and each of the embodiments can be used alone or together in combination.
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