SUBSTRATE PROCESSING DEVICE AND SUBSTRATE PROCESSING METHOD

    公开(公告)号:US20200227285A1

    公开(公告)日:2020-07-16

    申请号:US16626674

    申请日:2018-06-28

    Abstract: A substrate processing apparatus includes a suctioning unit for suctioning a processing liquid existing inside a processing liquid pipe that communicates with a discharge port, and a controller. In the suctioning step, the controller executes a suctioning step of suctioning the processing liquid existing inside the processing liquid pipe by the suctioning unit. The controller selectively executes a first suctioning step of retracting a leading end surface of the processing liquid and disposing the leading end surface of the processing liquid after suctioning in a preliminarily set standby position inside the processing liquid pipe, and a second suctioning step of retracting the leading end surface of the processing liquid further back than the standby position. After the second suctioning step, the controller further executes a standby position disposing step of supplying the processing liquid to the processing liquid pipe by the processing liquid supplying unit and disposing the leading end surface of the processing liquid in the standby position.

    SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD

    公开(公告)号:US20240096651A1

    公开(公告)日:2024-03-21

    申请号:US18523474

    申请日:2023-11-29

    Abstract: First and second concentration measurement parts (415, 425) are provided in first and second supply liquid lines (412, 422) in which first and second supply liquids flow, respectively. A dissolved concentration of gas in the second supply liquid is lower than that in the first supply liquid. In the first and second supply liquid lines, respective one ends of first and second branch lines (51, 52) are connected to respective positions on the upstream side of the concentration measurement parts. The other ends of the first and second branch lines are connected to a mixing part (57), and by mixing the first and second supply liquids, a processing liquid is generated. Respective flow rate adjustment parts (58) of the first and second branch lines are controlled on the basis of respective measured values of the first and second concentration measurement parts so that the dissolved concentration of the gas in the processing liquid can become a set value. It is thereby possible to prevent the supply liquid containing particles or the like caused by the concentration measurement part from being contained into the processing liquid to be supplied to a substrate and also to adjust the dissolved concentration of the gas in the processing liquid to the set value with high accuracy.

    SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS

    公开(公告)号:US20190172733A1

    公开(公告)日:2019-06-06

    申请号:US16203727

    申请日:2018-11-29

    Abstract: A substrate processing method includes a first processing liquid supplying step of supplying a first processing liquid to an upper surface of a substrate, a holding-layer forming step of solidifying or curing the first processing liquid to form a particle holding layer on the upper surface of the substrate, a holding-layer removing step of peeling and removing the particle holding layer from the upper surface of the substrate, a liquid film forming step of forming, after removal of the particle holding layer from the substrate, a liquid film of a second processing liquid, a gas phase layer forming step of forming a gas phase layer for holding the liquid film between the upper surface of the substrate and the liquid film, and a liquid film removing step of removing the second processing liquid from the upper surface of the substrate by moving the liquid film on the gas phase layer.

    SUBSTRATE PROCESSING APPARATUS, PROCESSING LIQUID DRAINING METHOD, PROCESSING LIQUID REPLACING METHOD, AND SUBSTRATE PROCESSING METHOD

    公开(公告)号:US20190267260A1

    公开(公告)日:2019-08-29

    申请号:US16261641

    申请日:2019-01-30

    Abstract: A substrate processing apparatus includes a processing liquid supply nozzle to supply a processing liquid to a substrate, a storage portion that stores the processing liquid supplied, a liquid-sending pipe that sends the processing liquid stored in the storage portion to the nozzle, a flow pipe that allows a processing liquid to flow therethrough, an oxygen concentration meter interposed in the flow pipe, a hypoxic fluid supply pipe that is in communication with the flow pipe and that sends a hypoxic fluid to the flow pipe, and a flow rate changing valve interposed in the hypoxic fluid supply pipe. A flow-rate-changing controller controls the flow rate changing valve so that the hypoxic fluid is supplied to the flow pipe until an inside of the flow pipe is filled with the hypoxic fluid when the processing liquid inside the flow pipe is drained.

    SUBSTRATE PROCESSING DEVICE AND SUBSTRATE PROCESSING METHOD

    公开(公告)号:US20190262851A1

    公开(公告)日:2019-08-29

    申请号:US16320127

    申请日:2017-09-07

    Abstract: A substrate processing apparatus includes a substrate holding unit which holds a substrate, a processing liquid piping which is communicatively connected with a discharge port for discharging a processing liquid to a major surface of the substrate, a processing liquid supplying unit for supplying the processing liquid to the processing liquid piping, a suction unit for suctioning the processing liquid present inside the processing liquid piping, and a controller which controls the processing liquid supplying unit and the suction unit, wherein the controller executes a processing liquid supplying step which supplies the processing liquid to the processing liquid piping in order to discharge it from the discharge port by the processing liquid supplying unit and a suctioning step which suctions the processing liquid inside the processing liquid piping by the suction unit, and the controller selectively executes a first suctioning step in which, in the suctioning step, the processing liquid is suctioned and a leading end surface of the processing liquid after being suctioned is disposed at a predetermined standby position inside the processing liquid piping and a second suctioning step in which the processing liquid is suctioned and the leading end surface of the processing liquid is allowed to recede from the standby position.

    SUBSTRATE PROCESSING APPARATUS
    8.
    发明申请

    公开(公告)号:US20170271177A1

    公开(公告)日:2017-09-21

    申请号:US15449188

    申请日:2017-03-03

    Abstract: In a substrate processing apparatus, the inner peripheral edge of a second-cup canopy part radially opposes an outer peripheral surface of an opposing-member side wall part. This suppresses dispersion of processing liquids to above a cup part. A second-cup gap distance that is a radial distance between the outer peripheral surface of the opposing-member side wall part and the inner peripheral edge of the second-cup canopy part is greater than a holder gap distance that is a radial distance between the inner peripheral surface of the opposing-member side wall part and the outer peripheral surface of the substrate holder. This prevents or suppresses the possibility that, when a second processing liquid dispersed from a substrate is received by a second cup, the second processing liquid may be pushed downward by a downward airflow. Accordingly, a plurality of types of processing liquids will be separately received by a plurality of cups.

    SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS

    公开(公告)号:US20220331845A1

    公开(公告)日:2022-10-20

    申请号:US17851919

    申请日:2022-06-28

    Abstract: A substrate processing method includes a first processing liquid supplying step of supplying a first processing liquid to an upper surface of a substrate, a holding-layer forming step of solidifying or curing the first processing liquid to form a particle holding layer on the upper surface of the substrate, a holding-layer removing step of peeling and removing the particle holding layer from the upper surface of the substrate, a liquid film forming step of forming, after removal of the particle holding layer from the substrate, a liquid film of a second processing liquid, a gas phase layer forming step of forming a gas phase layer for holding the liquid film between the upper surface of the substrate and the liquid film, and a liquid film removing step of removing the second processing liquid from the upper surface of the substrate by moving the liquid film on the gas phase layer.

    SUBSTRATE PROCESSING METHOD
    10.
    发明申请

    公开(公告)号:US20220076941A1

    公开(公告)日:2022-03-10

    申请号:US17527215

    申请日:2021-11-16

    Abstract: A substrate processing method includes a processing liquid supplying step of supplying a processing liquid to a patterned surface of a substrate having the patterned surface with projections and recesses, a processing film forming step of solidifying or curing the processing liquid supplied to the patterned surface to form, so as to follow the projections and the recesses of the patterned surface, a processing film which holds a removal object present on the patterned surface and a removing step of supplying a peeling liquid to the patterned surface to peel the processing film from the patterned surface together with the removal object, thereby removing the processing film from the substrate, while such a state is kept that the removal object is held by the processing film.

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