公开(公告)号：US20240183030A1

公开(公告)日：2024-06-06

申请号：US18492149

申请日：2023-10-23

Applicant: SEMES CO., LTD.

Inventor： Hae Won CHOI ,  Thomas Jongwan KWON ,  Chengyeh HSU

IPC: C23C16/04 ,  C23C16/06

CPC classification number: C23C16/045 ,  C23C16/06

Abstract: Provided is a substrate treatment apparatus using a supercritical fluid, the apparatus capable of depositing a conformal film in a trench with a high aspect ratio and capable of performing void-free complete gap-filling. The substrate treatment apparatus includes: an upper vessel including a first body and a supply port formed in the first body and supplying a process fluid; a baffle plate installed in the upper vessel and supplying the process fluid supplied through the supply port to a treatment space by diffusing the process fluid; a lower vessel including a second body and an exhaust port formed in the second body and exhausting the process fluid from the treatment space; and a support plate installed in the lower vessel to face the baffle plate and supporting a substrate, wherein while a supercritical process is performed in the treatment space, the support plate is heated so that the temperature of the support plate is higher than that of the first body.

公开(公告)号：US20240186135A1

公开(公告)日：2024-06-06

申请号：US18497425

申请日：2023-10-30

Applicant: SEMES CO., LTD.

Inventor： Hae Won CHOI ,  Thomas Jongwan KWON ,  Chengyeh HSU

IPC: H01L21/02 ,  H01L21/67

CPC classification number: H01L21/02101 ,  H01L21/67028

Abstract: A substrate processing method using a supercritical fluid is provided that can deposit a conformal film in a trench with a high aspect ratio and allows complete filling without voids. The substrate processing method comprises performing a supercritical process by repeating a first step, a first vent step, a second step, and a second vent step a plurality of times in order, supplying, in the first step, a first process fluid containing a precursor and a first supercritical fluid to a reactor so that a pressure of the reactor repeats rise and fall within a first pressure range a plurality of times, venting, in the first vent step, the reactor to lower the pressure of the reactor below the first pressure range, supplying, in the second step, a second process fluid containing a reducing fluid to the reactor so that the pressure of the reactor repeats rise and fall within a second pressure range different from the first pressure range a plurality of times, venting, in the second vent step, the reactor to lower the pressure of the reactor below the second pressure range.

公开(公告)号：US20240213041A1

公开(公告)日：2024-06-27

申请号：US18543499

申请日：2023-12-18

Applicant: SEMES CO., LTD.

Inventor： Taeshin KIM ,  Youngdae CHUNG ,  Chengyeh HSU ,  Thomas Jongwan KWON

IPC: H01L21/67 ,  C23C16/48

CPC classification number: H01L21/67017 ,  C23C16/483

Abstract: A substrate processing device includes a substrate support portion supporting a substrate, a fluid supply portion arranged above the substrate support portion and configured to supply an initiator and a monomer toward the substrate, and a laser generation portion configured to irradiate a laser in a direction intersecting a direction in which the initiator and the monomer are supplied and parallel to a surface of the substrate, wherein the initiator and the monomer are polymerized by the laser and deposited on the substrate.

公开(公告)号：US20240183037A1

公开(公告)日：2024-06-06

申请号：US18494979

申请日：2023-10-26

Applicant: SEMES CO., LTD.

Inventor： Hae Won CHOI ,  Thomas Jongwan KWON ,  Chengyeh HSU

IPC: C23C18/16 ,  C23C18/18

CPC classification number: C23C18/1603 ,  C23C18/1658 ,  C23C18/1685 ,  C23C18/18

Abstract: A substrate processing method using a supercritical fluid is provided that can deposit a conformal film in a trench with a high aspect ratio and allows complete filling without voids. The substrate processing method comprises supplying a first process fluid containing a precursor and a first supercritical fluid to a reactor to raise a pressure of the reactor to a first pressure equal to or greater than a critical pressure, subsequently, first venting the reactor to lower the pressure in the reactor to a second pressure, subsequently, supplying a second process fluid containing a reducing fluid to the reactor to raise the pressure in the reactor to a third pressure, subsequently, second venting the reactor to lower the pressure in the reactor to a fourth pressure.

公开(公告)号：US20240179885A1

公开(公告)日：2024-05-30

申请号：US18495266

申请日：2023-10-26

Applicant: SEMES CO., LTD.

Inventor： Thomas Jongwan KWON ,  Hae Won CHOI ,  Yun Sang KIM ,  Chengyeh HSU

IPC: H10B12/00

CPC classification number: H10B12/053 ,  H10B12/09 ,  H10B12/34

Abstract: A method of fabricating a semiconductor device, which is capable of sufficiently filling trenches, is provided. The method includes: providing a substrate having defined thereon a plurality of active regions, which are spaced apart from one another by a device isolation film; forming a plurality of wordline trenches, which extend longitudinally in one direction, by removing portions of the active regions and portions of the device isolation film; forming gate insulating films along inner sidewalls of the wordline trenches; and forming wordlines, which fill portions of the wordline trenches, on the gate insulating films, wherein the forming the wordlines, comprises filling the portions of the wordline trenches with metal layers using a supercritical fluid deposition (SFD) method.