公开(公告)号：US20230317415A1

公开(公告)日：2023-10-05

申请号：US17712035

申请日：2022-04-01

Applicant: SEMES CO., LTD.

Inventor： Dong Hun KIM ,  Da Som BAE ,  Wan Jae PARK ,  Seong Gil LEE ,  Young Je UM ,  Ji Hwan LEE ,  Dong Sub OH ,  Myoung Sub NOH ,  Joun Taek KOO ,  Du Ri KIM

IPC: H01J37/32 ,  H01L21/3065

CPC classification number: H01J37/3244 ,  H01J37/32422 ,  H01J2237/334 ,  H01L21/3065 ,  H01J37/32568

Abstract: A substrate processing apparatus and method capable of maximizing plasma uniformity are provided. The substrate processing method comprises providing a substrate processing apparatus including a processing space for processing a substrate and a plasma generating module for generating plasma for processing the substrate, wherein the plasma generating module comprises a plurality of first electrodes disposed in parallel with each other in a first direction, a plurality of second electrodes disposed in parallel with each other in a second direction different from the firs direction, and an array including a plurality of micro plasma cells connected to the plurality of first electrodes and the plurality of second electrodes, providing a process gas to the plurality of micro plasma cells, and providing a reaction gas to the processing space, wherein a first micro plasma cell of the plurality of micro plasma cells is provided with a first energy of a first magnitude, and to a second micro plasma cell is provided with a second energy of a second magnitude different from the first magnitude, so that an amount of radicals in plasma generated in the first micro plasma cell is different from an amount of radicals in plasma generated in the second micro plasma cell.

公开(公告)号：US20230204449A1

公开(公告)日：2023-06-29

申请号：US17842978

申请日：2022-06-17

Applicant: SEMES CO., LTD.

Inventor： Mi Young JO ,  Kyeong Hee KANG ,  Young Ran KO ,  Da Som BAE

IPC: G01M3/24

CPC classification number: G01M3/24

Abstract: Provided are an apparatus and method for inspecting a gas leak. The apparatus for inspecting a gas leak includes a chamber in which a substrate is accommodated; a gas supply unit configured to supply a gas for use in processing the substrate; an electrostatic chuck spaced apart from the substrate and having a gap space to which the gas is supplied; and a sensing unit configured to identify a location of gas leak in at least the electrostatic chuck