公开(公告)号：US20230148026A1

公开(公告)日：2023-05-11

申请号：US17716853

申请日：2022-04-08

Applicant: SEMES CO., LTD.

Inventor： Seong Gil LEE ,  Myoung Sub NOH ,  Dong-Hun KIM ,  Young Je UM ,  Dong Sub OH ,  Jun Taek KOO ,  Wan Jae PARK

IPC: H01J37/32

CPC classification number: H01J37/32724 ,  H01J37/32422 ,  H01J37/32449 ,  H01J37/32834 ,  H01J2237/334 ,  H01J2237/2007

Abstract: A substrate treating method includes a temperature stabilizing step for stabilizing a temperature of the substrate to a process temperature in a treating space for treating a substrate, a pressure stabilizing step for stabilizing a pressure of a plasma space for generating a plasma and a pressure of the treating space to a process, the plasma space fluid communicating with the treating space, and a treating step for generating the plasma at the plasma space and treating the substrate using the plasma.

公开(公告)号：US20230136707A1

公开(公告)日：2023-05-04

申请号：US17977440

申请日：2022-10-31

Applicant: SEMES CO., LTD.

Inventor： Dong-Hun KIM ,  Jun Taek KOO ,  Myoung Sub NOH ,  Dong Sub OH

IPC: H01J37/32 ,  G02B27/28

Abstract: The inventive concept provides a substrate treating apparatus. The substrate treating apparatus includes a housing having an inner space; a plate separating the inner space into a first space which is above and a second space which is below and having a plurality of through holes; a first gas supply unit configured to supply a first gas to the first space; a plasma source for generating a plasma at the first space or the second space; and a monitoring unit installed at the plate and configured to monitor a characteristic of the plasma generated at the first space or the second space.

公开(公告)号：US20230317415A1

公开(公告)日：2023-10-05

申请号：US17712035

申请日：2022-04-01

Applicant: SEMES CO., LTD.

Inventor： Dong Hun KIM ,  Da Som BAE ,  Wan Jae PARK ,  Seong Gil LEE ,  Young Je UM ,  Ji Hwan LEE ,  Dong Sub OH ,  Myoung Sub NOH ,  Joun Taek KOO ,  Du Ri KIM

IPC: H01J37/32 ,  H01L21/3065

CPC classification number: H01J37/3244 ,  H01J37/32422 ,  H01J2237/334 ,  H01L21/3065 ,  H01J37/32568

Abstract: A substrate processing apparatus and method capable of maximizing plasma uniformity are provided. The substrate processing method comprises providing a substrate processing apparatus including a processing space for processing a substrate and a plasma generating module for generating plasma for processing the substrate, wherein the plasma generating module comprises a plurality of first electrodes disposed in parallel with each other in a first direction, a plurality of second electrodes disposed in parallel with each other in a second direction different from the firs direction, and an array including a plurality of micro plasma cells connected to the plurality of first electrodes and the plurality of second electrodes, providing a process gas to the plurality of micro plasma cells, and providing a reaction gas to the processing space, wherein a first micro plasma cell of the plurality of micro plasma cells is provided with a first energy of a first magnitude, and to a second micro plasma cell is provided with a second energy of a second magnitude different from the first magnitude, so that an amount of radicals in plasma generated in the first micro plasma cell is different from an amount of radicals in plasma generated in the second micro plasma cell.

公开(公告)号：US20230144896A1

公开(公告)日：2023-05-11

申请号：US17879780

申请日：2022-08-03

Applicant: SEMES CO., LTD.

Inventor： Young Je UM ,  Wan Jae PARK ,  Dong Hun KIM ,  Seong Gil LEE ,  Dong Sub OH ,  Myoung Sub NOH ,  Min Sung HAN ,  Jae Hoo LEE

IPC: H01L21/677 ,  H01L21/67 ,  C23C16/44

CPC classification number: H01L21/67766 ,  H01L21/67103 ,  C23C16/4408 ,  H01L21/67034

Abstract: A substrate treating apparatus configuring an individual LL for each PM and a semiconductor manufacturing facility including the same are provided. The semiconductor manufacturing facility comprises an index module including a first transfer robot and for carrying out and transferring a substrate mounted on a container using the first transfer robot, a transfer module including a second transfer robot and for relaying the substrate transferred by the index module using the second transfer robot, a buffer chamber for heating the substrate relayed by the transfer module, and a process chamber for treating the substrate heated by the buffer chamber, wherein the buffer chamber heats the substrate while the substrate waits before being loaded into the process chamber.

公开(公告)号：US20240096603A1

公开(公告)日：2024-03-21

申请号：US18469755

申请日：2023-09-19

Applicant: SEMES CO., LTD.

Inventor： Dong-Hun KIM ,  Wan Jae PARK ,  Dong Sub OH ,  Myoung Sub NOH ,  Ji Hoon PARK

IPC: H01J37/32

CPC classification number: H01J37/3244 ,  H01J37/32422 ,  H01J2237/334 ,  H01L21/67069

Abstract: The inventive concept provides a substrate treating apparatus. The substrate treating apparatus includes an electrode plate applied with a power; an ion blocker positioned at a bottom side of the electrode plate, which has a plurality of top holes formed thereon, and which is grounded; a shower head positioned at a bottom side of the ion blocker and which has a plurality of bottom holes formed thereon; and a turbulence generating unit configured to have a turbulence space therein, and which is positioned at a space between the ion blocker and the shower head, and wherein the top hole is positioned to overlap the turbulence space when seen from above, and the bottom hole is positioned at an outer side of the turbulence space, and which faces at least one of a bottom surface of the ion blocker and an outer wall of the turbulence generating unit when seen from below.

公开(公告)号：US20230207248A1

公开(公告)日：2023-06-29

申请号：US17973985

申请日：2022-10-26

Applicant: SEMES CO., LTD.

Inventor： Young Je UM ,  Min Sung HAN ,  Seong Gil LEE ,  Wan Jae PARK ,  Dong Sub OH ,  Yoon Jong JU ,  Myoung Sub NOH

IPC: H01J37/02 ,  H01J37/32

CPC classification number: H01J37/02 ,  H01J37/3244 ,  H01J37/32467 ,  H01J2237/32

Abstract: An exemplary embodiment of the present invention provides a substrate treating apparatus, including: a chamber having an inner space; a shower head for partitioning the inner space into an upper first zone and a lower second zone, and formed with a plurality of through holes; a support unit for supporting a substrate in the second zone; a gas supply unit for supplying gas to the first zone; a plasma source for forming a plasma in the first zone by exciting the gas; and an adsorption plate coupled to the shower head, in which a surface of the adsorption plate is provided with a material that adsorbs radicals contained in the plasma.

公开(公告)号：US20230197412A1

公开(公告)日：2023-06-22

申请号：US17885543

申请日：2022-08-11

Applicant: SEMES CO, LTD.

Inventor： Seong Gil LEE ,  Young Je UM ,  Myoung Sub NOH ,  Dong Sub OH ,  Min Sung HAN ,  Dong Hun KIM ,  Wan Jae PARK

IPC: H01J37/32 ,  B08B7/00

CPC classification number: H01J37/32422 ,  H01J37/32449 ,  B08B7/0035 ,  H01J2237/3346 ,  H01J2237/335 ,  H01L21/3065

Abstract: A substrate processing apparatus using plasma capable of efficiently controlling the selectivity ratio of a silicon layer and an oxide layer is provided. The substrate processing apparatus comprises a first space disposed between an electrode and an ion blocker; a second space disposed between the ion blocker and a shower head; a processing space under the shower head for processing a substrate; a first supply hole for providing a first gas for generating plasma to the first space; a second supply hole for providing a second gas to be mixed with an effluent of the plasma to the second space; and a first coating layer formed on a first surface of the shower head facing the second space, not formed on a second surface of the shower head facing the processing space, and containing nickel.