公开(公告)号：US20250157795A1

公开(公告)日：2025-05-15

申请号：US18939613

申请日：2024-11-07

Applicant: SEMES CO., LTD.

Inventor： Jun Seok PARK ,  Jong Joon JEON ,  Yong Jae KIM ,  Chul Ho JUNG ,  Ja Myung GU

IPC: H01J37/32 ,  H01J9/30

Abstract: Disclosed are an electrostatic chuck capable of preventing deformation of a bonding layer and damage to a lift pin, a method of manufacturing the electrostatic chuck, and a plasma processing apparatus. The electrostatic chuck configured to support a substrate and to receive a lift pin so that the lift pin is ascendable and descendable therein includes at least one pin hole formed vertically therethrough to allow the lift pin to ascend and descend along the pin hole, a ceramic puck configured to allow the substrate to be seated thereon, a base plate configured to support the ceramic puck, a bonding layer configured to bond the ceramic puck to the base plate, and an insulating pipe mounted on an inner side wall of the pin hole. The insulating pipe includes an upper insulating pipe bonded to the ceramic puck and a lower insulating pipe adhered to the base plate.

公开(公告)号：US20250105052A1

公开(公告)日：2025-03-27

申请号：US18829452

申请日：2024-09-10

Applicant: SEMES CO., LTD.

Inventor： Yong Jun BAE ,  Shant ARAKELYAN ,  Jun Seok PARK ,  Asatur KHURSHUDYAN ,  Ja Myung GU

IPC: H01L21/687 ,  H01J37/32

Abstract: A substrate support unit including a Q-pad capable of minimizing fastening pressure variations that may be caused by heat and a substrate treating apparatus including the substrate support unit are provided. The substrate treating apparatus includes: a chamber housing; a substrate support unit supporting a substrate within the chamber housing; a showerhead unit providing a process gas into the chamber housing; and a plasma generation unit generating plasma for treating the substrate within the chamber housing using the process gas, wherein the substrate support unit includes a base plate, a dielectric layer, which is disposed on the base plate, and a thermal transfer pad, which is disposed between the base plate and the dielectric layer and bonds the base plate and the dielectric layer together, and the thermal transfer pad includes a plurality of corrugated patterns.

公开(公告)号：US20230194585A1

公开(公告)日：2023-06-22

申请号：US17992972

申请日：2022-11-23

Applicant: SEMES CO., LTD.

Inventor： Tae Hoon JO ,  Hyo Seong SEONG ,  Ji Hyun KIM ,  Ja Myung GU

IPC: G01R27/16

CPC classification number: G01R27/16

Abstract: Proposed are a method and an apparatus for determining a cable length for plasma processing equipment. More particularly, proposed is a method of determining a length of a power supply cable for plasma processing equipment that performs plasma processing through power supply at radio frequencies (RF) of several tens of MHz or more.

公开(公告)号：US20220208525A1

公开(公告)日：2022-06-30

申请号：US17563161

申请日：2021-12-28

Applicant: SEMES CO., LTD.

Inventor： Shant ARAKELYAN ,  Ja Myung GU

IPC: H01J37/32

Abstract: The inventive concept provides a substrate treating apparatus. The substrate treating apparatus includes a process chamber having a treating space therein; a support unit for supporting a substrate within the process chamber; a gas supply unit for supplying a process gas inside the process chamber; and a plasma generation unit for generating a plasma from the process gas, wherein the plasma generation unit comprises: a top electrode disposed above the substrate; a bottom electrode disposed below the substrate; an edge electrode disposed at an edge surrounding the substrate; three high frequency power sources applying a high frequency power to the bottom electrode; and an edge impedance control circuit connecting to the edge electrode.

公开(公告)号：US20250105044A1

公开(公告)日：2025-03-27

申请号：US18650955

申请日：2024-04-30

Applicant: SEMES CO., LTD.

Inventor： Yong Jun BAE ,  ASATUR KHURSHUDYAN ,  Jun Seok PARK ,  SHANT ARAKEL YAN ,  Ja Myung GU

IPC: H01L21/683 ,  H01J37/32

Abstract: Proposed are an electrostatic chuck, a plasma processing method, and a plasma processing apparatus for preventing abrupt temperature changes in a substrate and maintain a constant temperature. The electrostatic chuck that supports a substrate in the plasma processing apparatus includes a puck on which a substrate for plasma processing is seated and having a heater, and a base plate located below the puck and having a cooling passage through which fluid for cooling flows. A temperature maintenance layer composed of a phase change material is provided inside the base plate.

公开(公告)号：US20250101590A1

公开(公告)日：2025-03-27

申请号：US18800442

申请日：2024-08-12

Applicant: SEMES CO., LTD.

Inventor： Jun Seok PARK ,  Yong Jun BAE ,  Ja Myung GU ,  Asatur KHURSHUDYAN ,  Shant ARAKELYAN

IPC: C23C16/458 ,  C23C16/455

Abstract: Provided is a substrate processing apparatus. The substrate processing apparatus of the present invention comprises a support unit provided in a processing space for processing a substrate and for supporting the substrate, wherein the support unit comprises a puck having a first thermal conductivity and having a concave groove formed thereon; and a block provided in the concave groove and having a second thermal conductivity different from the first thermal conductivity.

公开(公告)号：US20230207266A1

公开(公告)日：2023-06-29

申请号：US18147382

申请日：2022-12-28

Applicant: SEMES CO., LTD.

Inventor： Ja Myung GU ,  Hyung Joon KIM ,  Sae Won NA

IPC: H01J37/32

CPC classification number: H01J37/32174 ,  H01J37/32642 ,  H01J37/32715

Abstract: Disclosed is a substrate processing apparatus. The substrate processing apparatus includes a chamber having an inner space; a support unit that supports a substrate in the inner space; a ring unit disposed on an edge area of the support unit when viewed from above; a power unit that generates RF power for forming an electric field in the inner space; and a harmonic control unit connected to the ring unit to control harmonics generated by the RF power.