Apparatus and method for treating substrate

    公开(公告)号:US11942337B2

    公开(公告)日:2024-03-26

    申请号:US17063820

    申请日:2020-10-06

    Abstract: The apparatus includes a support unit to support the substrate in a treatment space of a process chamber, a first fluid supply unit to supply a supercritical fluid having an organic solvent dissolved in the supercritical fluid, to the treatment space, a second fluid supply unit to supply the supercritical fluid having no organic solvent dissolved in the supercritical fluid, to the treatment space, an exhaust unit to exhaust the treatment space, a controller to control the first fluid supply unit, the second fluid supply unit, and the exhaust unit. The controller controls the first and second fluid supply units such that the supercritical fluid having no organic solvent dissolved in the supercritical fluid is supplied to the treatment space through the second fluid supply unit, after the supercritical fluid mixed with the organic solvent is supplied to the treatment space through the first fluid supply unit.

    Substrate treating apparatus
    3.
    发明授权

    公开(公告)号:US12300483B2

    公开(公告)日:2025-05-13

    申请号:US17370475

    申请日:2021-07-08

    Abstract: An apparatus for treating a substrate using a treating fluid in a supercritical state is provided. In a pressure increasing step of increasing a pressure in the treating space from a pressure lower than a critical pressure of the treating fluid to a treating pressure higher than the critical pressure, the apparatus controls a supply amount of the treating fluid supplied from a first supply port to control flow of the treating fluid supplied from the first supply port and then exhausted through an exhaust port.

    Apparatus for treating substrate and method for treating substrate

    公开(公告)号:US11842903B2

    公开(公告)日:2023-12-12

    申请号:US17061622

    申请日:2020-10-02

    Applicant: Semes Co., Ltd

    CPC classification number: H01L21/67051 B08B7/0021

    Abstract: An apparatus for treating a substrate is provided. The apparatus for treating the substrate includes a high pressure chamber to provide a treatment space to perform a process of treating the substrate using a process fluid, a fluid supply source to provide the process fluid to the high pressure chamber, a fluid supply unit to supply the process fluid to the treatment space of the high pressure chamber, an exhaust unit to exhaust the process fluid in the high pressure chamber, and a pre-vent unit to vent a process fluid remaining inside a supply line.

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