Method for treating substrate
    4.
    发明授权

    公开(公告)号:US11621159B2

    公开(公告)日:2023-04-04

    申请号:US16929190

    申请日:2020-07-15

    Abstract: Disclosed is a method of treating a substrate. In one embodiment, supercritical fluid is supplied to a treatment space in a chamber such that the substrate in the treatment space is treated. The supercritical fluid is supplied to the treatment space while exhausting the treatment space. A temperature of the supercritical fluid supplied when exhausting the treatment space is higher than a temperature of the supercritical fluid supplied to the treatment space for treating the substrate.

    Substrate treating apparatus and treatment liquid nozzle

    公开(公告)号:US10211074B2

    公开(公告)日:2019-02-19

    申请号:US15006359

    申请日:2016-01-26

    Applicant: Semes Co., Ltd

    Abstract: Disclosed is a substrate treating apparatus. The substrate treating apparatus includes a housing having a space for treating a substrate in the interior thereof, a spin head which supports and rotates the substrate inside the housing, and an ejection unit having a first nozzle member for ejecting a first treatment liquid onto the substrate positioned on the spin head. The first nozzle member includes a body having an ejection passage, through which the first treatment liquid flows, therein and a first discharge hole communicated with the ejection passage to eject the first treatment liquid onto the substrate, and a vibrator installed in the body to provide vibration for the first treatment liquid flowing through the ejection passage. The vibrator has an interference preventing recess for preventing an interference by reflective waves therein.

    Substrate processing apparatus and substrate processing method

    公开(公告)号:US12211716B2

    公开(公告)日:2025-01-28

    申请号:US17664243

    申请日:2022-05-20

    Abstract: A substrate processing apparatus includes a chamber including an upper chamber and a lower chamber coupled to each other to provide a space for processing a substrate, a substrate support configured to support the substrate within the chamber, an upper supply port provided in the upper chamber and configured to supply a supercritical fluid on an upper surface of the substrate within the chamber, a recess provided in a lower surface of the upper chamber, the recess including a horizontal extension portion extending in a direction parallel with the upper surface of the substrate in a radial direction from an outlet of the upper supply port and an inclined extension portion extending obliquely at an angle from the horizontal extension portion, and a baffle member disposed within the recess between the upper supply port and the substrate.

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