公开(公告)号：US20250093768A1

公开(公告)日：2025-03-20

申请号：US18770090

申请日：2024-07-11

Applicant: SEMES CO., LTD. ,  SAMSUNG ELECTRONICS CO. LTD.

Inventor： Jin Yeong SUNG ,  Ki Hoon CHOI ,  Seung Un OH ,  Young Ho PARK ,  Sang Hyeon RYU ,  Jang Jin LEE ,  Hyun YOON ,  Sang Gun LEE ,  Yu Jin CHO ,  Ho Jong HWANG ,  Jong Ju PARK ,  Jong Keun OH ,  Yong Woo KIM

IPC: G03F1/72 ,  G03F1/84 ,  G06T7/20 ,  G06T7/66

Abstract: A substrate processing apparatus is provided and includes: a support unit including a spin chuck and a centering jig that is on the spin chuck, the spin chuck configured to support and rotate a substrate; a spraying unit configured to spray processing liquid onto the substrate; a swing arm including a correction unit that includes a sensor and an emitter, the swing arm configured to move such that the correction unit moves to a target point on the substrate, and the emitter configured to irradiate a beam towards the substrate; and a controller configured to: control the spin chuck and the swing arm; and determine whether a movement trajectory of the swing arm is aligned with a rotation center of the spin chuck based on information acquired by the sensor about the centering jig.

公开(公告)号：US20220290921A1

公开(公告)日：2022-09-15

申请号：US17692395

申请日：2022-03-11

Applicant: SEMES CO., LTD.

Inventor： Hae-Won CHOI ,  Anton KORIAKIN ,  Joon Ho WON ,  Min Woo KIM ,  Ki Hoon CHOI ,  Eung Su KIM ,  Tae Hee KIM ,  Pil Kyun HEO ,  Jang Jin LEE ,  Jin Yeong SUNG

IPC: F26B5/00

Abstract: The inventive concept provides a method for treating a substrate. The method for treating a substrate comprises: a pressurization step for increasing a pressure of an inner space of a chamber by supplying a treating fluid to the inner space, after taking the substrate into the inner space; a flow step for generating a flow of the treating fluid by combination of supplying and discharging the treating fluid to and from the inner space; and a depressurization step of decreasing the pressure of the inner space by discharging the treating fluid from the inner space, and wherein the pressurization step comprises: a bottom side supply process for increasing the pressure of the inner space by supplying the treating fluid to a backside of the substrate taken into the inner space;
and a top side supply process of increasing the pressure of the inner space by supplying the treating fluid to a top side of the substrate taken into the inner space.

公开(公告)号：US20240152056A1

公开(公告)日：2024-05-09

申请号：US18502628

申请日：2023-11-06

Applicant: SEMES CO., LTD.

Inventor： Sang Gun LEE ,  Ki Hoon CHOI ,  Hyun YOON ,  Seung Un OH ,  Jin Yeong SUNG ,  Jang Jin LEE ,  Tae Shin KIM

IPC: G03F7/42 ,  G03F7/40

CPC classification number: G03F7/423 ,  G03F7/40

Abstract: The inventive concept provides a substrate treating method. The substrate treating method includes supplying a liquid to a substrate; and heating the substrate after the supplying the liquid, and wherein the supplying the liquid includes: supplying a first liquid to the substrate; and supplying a second liquid which is different from the first liquid to a substrate to which the first liquid is supplied, and wherein the second liquid is supplied as a test to the substrate and a contact angle between the second liquid which is supplied and the substrate is measured to determine a degree of hydrophilization of the substrate, and a supply mechanism of the second liquid supplied to the substrate is determined based on the degree of hydrophilization of the substrate which is determined, before the supplying the second liquid is performed.

公开(公告)号：US20240227075A9

公开(公告)日：2024-07-11

申请号：US18480393

申请日：2023-10-03

Applicant: SEMES CO., LTD.

Inventor： Tae Shin KIM ,  Ki Hoon CHOI ,  Tae Hee KIM ,  Sang Gun LEE ,  Jin Yeong SUNG ,  Jang Jin LEE

IPC: B23K26/12 ,  B23K26/08 ,  B23K26/362 ,  H01L21/768

CPC classification number: B23K26/128 ,  B23K26/0884 ,  B23K26/362 ,  H01L21/76894 ,  B23K2101/40

Abstract: Embodiments of the inventive concept provide a substrate treating apparatus and a substrate treating method for not letting an irradiation region of a laser deviate from a target region, even if a shaking angle of a chemical deviates from an allowable range due to a vibration or an airflow. The inventive concept provides a substrate treating apparatus. The substrate treating apparatus includes: a substrate support unit configured to support a substrate having a chemical coated thereon; a laser generation unit configured to irradiate a laser to the substrate; and a light-transmitter positioned along a path at which the laser is irradiated.

公开(公告)号：US20240131624A1

公开(公告)日：2024-04-25

申请号：US18480393

申请日：2023-10-02

Applicant: SEMES CO., LTD.

Inventor： Tae Shin KIM ,  Ki Hoon CHOI ,  Tae Hee KIM ,  Sang Gun LEE ,  Jin Yeong SUNG ,  Jang Jin LEE

IPC: B23K26/12 ,  B23K26/08 ,  B23K26/362 ,  H01L21/768

CPC classification number: B23K26/128 ,  B23K26/0884 ,  B23K26/362 ,  H01L21/76894 ,  B23K2101/40

Abstract: Embodiments of the inventive concept provide a substrate treating apparatus and a substrate treating method for not letting an irradiation region of a laser deviate from a target region, even if a shaking angle of a chemical deviates from an allowable range due to a vibration or an airflow. The inventive concept provides a substrate treating apparatus. The substrate treating apparatus includes: a substrate support unit configured to support a substrate having a chemical coated thereon; a laser generation unit configured to irradiate a laser to the substrate; and a light-transmitter positioned along a path at which the laser is irradiated.

公开(公告)号：US20230197481A1

公开(公告)日：2023-06-22

申请号：US17892677

申请日：2022-08-22

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Seung Min SHIN ,  Sang Jin PARK ,  Hae Won CHOI ,  Jang Jin LEE ,  Ji Hwan PARK ,  Kun Tack LEE ,  Koriakin ANTON ,  Joon Ho WON ,  Jin Yeong SUNG ,  Pil Kyun HEO

IPC: H01L21/67 ,  B65G47/90 ,  G03F7/16

CPC classification number: H01L21/67196 ,  H01L21/67225 ,  B65G47/90 ,  G03F7/168

Abstract: An apparatus and method for treating a substrate are provided. The apparatus includes at least one first process chamber configured to supply a developer onto the substrate; at least one second process chamber configured to treat the substrate using a supercritical fluid; a transfer chamber configured to transfer the substrate from the at least one first process chamber to the at least one second process chamber, while the developer supplied in the at least one first process chamber remains on the substrate; and a temperature and humidity control system configured to manage temperature and humidity of the transfer chamber by supplying a first gas of constant temperature and humidity into the transfer chamber.