中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

13 records (took 0.013 seconds)

    METHOD FOR TREATING A SUBSTRATE
    2.
    发明公开
    METHOD FOR TREATING A SUBSTRATE 审中-公开

    公开(公告)号：US20240152056A1

    公开(公告)日：2024-05-09

    申请号：US18502628

    申请日：2023-11-06

    Applicant: SEMES CO., LTD.

    Inventor： Sang Gun LEE ,  Ki Hoon CHOI ,  Hyun YOON ,  Seung Un OH ,  Jin Yeong SUNG ,  Jang Jin LEE ,  Tae Shin KIM

    IPC: G03F7/42 ,  G03F7/40

    CPC classification number: G03F7/423 ,  G03F7/40

    Abstract: The inventive concept provides a substrate treating method. The substrate treating method includes supplying a liquid to a substrate; and heating the substrate after the supplying the liquid, and wherein the supplying the liquid includes: supplying a first liquid to the substrate; and supplying a second liquid which is different from the first liquid to a substrate to which the first liquid is supplied, and wherein the second liquid is supplied as a test to the substrate and a contact angle between the second liquid which is supplied and the substrate is measured to determine a degree of hydrophilization of the substrate, and a supply mechanism of the second liquid supplied to the substrate is determined based on the degree of hydrophilization of the substrate which is determined, before the supplying the second liquid is performed.

    APPARATUS FOR TREATING SUBSTRATE
    4.
    发明公开
    APPARATUS FOR TREATING SUBSTRATE 审中-公开

    公开(公告)号：US20230207350A1

    公开(公告)日：2023-06-29

    申请号：US18147400

    申请日：2022-12-28

    Applicant: SEMES CO., LTD.

    Inventor： Tae Shin KIM ,  Young Dae Chung ,  Won-Geun Kim ,  Jee Young Lee ,  Ji Hoon Jeong

    IPC: H01L21/67 ,  H01L21/687

    CPC classification number: H01L21/67115 ,  H01L21/67248 ,  H01L21/6715 ,  H01L21/68764

    Abstract: Provided is an apparatus for treating a substrate, which includes: a chamber having a treating space; a substrate support unit supporting and rotating a substrate in the treating space; a liquid supply unit supplying a chemical liquid to the substrate supported on the substrate support unit; a laser irradiation unit irradiating a laser to a bottom of the substrate supported on the substrate support unit; and a laser reflection unit coupled to the laser irradiation unit, and reflecting the laser irradiated and reflected to the bottom of the substrate, in which the laser reflection unit includes a reflection member reflecting the laser reflected from the substrate, and a driving member tilting the reflection member at a predetermined tilt angle.

    APPARATUS FOR TREATING SUBSTRATE AND METHOD FOR TREATING SUBSTRATE
    5.
    发明申请
    APPARATUS FOR TREATING SUBSTRATE AND METHOD FOR TREATING SUBSTRATE 有权

    公开(公告)号：US20230039663A1

    公开(公告)日：2023-02-09

    申请号：US17865918

    申请日：2022-07-15

    Applicant: SEMES CO., LTD.

    Inventor： Jee Young LEE ,  Young Dae CHUNG ,  Ji Hoon JEONG ,  Won-Geun KIM ,  Tae Shin KIM

    IPC: H01L21/67 ,  H01L21/66 ,  H01L21/306

    Abstract: The inventive concept provides a substrate treating apparatus. The substrate treating apparatus includes a support unit horizontally maintaining a substrate; a laser irradiation unit for irradiating the substrate with a laser; a photo-detector for detecting an energy of a reflective light reflected from the substrate among a laser irradiated on the substrate; and a processor, and wherein the processor irradiates a first laser of a first output to the substrate, and sets a second output of a second laser for irradiating the substrate to heat the substrate, based on an energy of a first reflective light reflected from the substrate by the first laser detected from the photo-detector.

    APPARATUS AND METHOD OF PROCESSING SUBSTRATE
    7.
    发明公开
    APPARATUS AND METHOD OF PROCESSING SUBSTRATE 审中-公开

    公开(公告)号：US20240035166A1

    公开(公告)日：2024-02-01

    申请号：US18108002

    申请日：2023-02-09

    Applicant: SEMES CO., LTD.

    Inventor： Jee Young LEE ,  Won Geun KIM ,  Young Dae CHUNG ,  Ji Hoon JEONG ,  Tae Shin KIM ,  Won Sik SON

    IPC: C23F1/00

    CPC classification number: C23F1/00

    Abstract: A method of processing a substrate includes an etchant supplying operation of supplying an etchant to a substrate; a puddle operation of, by rotating the substrate at a first rotational speed, forming a liquid film of the etchant supplied to the substrate in a puddle shape; and a thickness adjusting operation of changing a rotational speed of the substrate to a rotational speed different from the first rotational speed to adjust a thickness of the liquid film of the etchant. Using the method, dispersion of the etching rate may be effectively controlled.

    APPARATUS FOR ETCHING THIN LAYER
    8.
    发明申请
    APPARATUS FOR ETCHING THIN LAYER 有权

    公开(公告)号：US20210178522A1

    公开(公告)日：2021-06-17

    申请号：US17115284

    申请日：2020-12-08

    Applicant: SEMES CO., LTD.

    Inventor： Won Geun KIM ,  Tae Shin KIM

    IPC: B23K26/362 ,  H01L21/263

    Abstract: A thin layer etching apparatus includes an etchant supply unit configured to supply an etchant onto a substrate to etch a thin layer formed on the substrate, a temperature measuring unit configured to measure a temperature of the substrate while an etching process is performed by the etchant, a laser irradiating unit configured to irradiate a first laser beam on a first portion including a central portion of the substrate and to irradiate a second laser beam in a ring shape on a second portion surrounding the first portion so that the temperature of the substrate is maintained at a predetermined temperature during the etching process, and a process control unit configured to control power of the first and second laser beams based on the temperature of the substrate measured by the temperature measuring unit to reduce a temperature difference between the first and second portions of the substrate.

Patent Agency Ranking